纳米无机小分子物质对PVC/PVDF/PMMA共混膜性能的影响

讨论了纳米无机小分子物质TiO2、SiO2、Al2O3对PVC/PVDF/PMMA共混溶液的剪切黏度及其共混膜形态结构、水通量及机械性能等性能的影响,结果表明,无机小分子TiO2、SiO2、Al2O3的加入均能使PVC/PVDF/PMMA共混溶液的剪切粘度增加,但TiO2增加的程度最大,SiO2、Al2 O3增加的程度相当;纳米TiO2、SiO2、Al2O3对使PVC/PVDF/PMMA共混膜的水通量和韧性有较大程度的提高,且加入量为2％时,提高程度最大;SiO2、Al2O3对共混膜的结构有一定程度的影响,并使共混膜的拉伸强度略有降低,TiO2的加入对膜的结构没有太大的影响,但能使共混膜的拉伸强度略有提高.     

热致相分离法制备纳米碳酸钙/聚偏氟乙烯共混膜

以邻苯二甲酸二丁酯(DBP)为主要稀释剂,添加无机粒子CaCO3,采用热致相分离法(TIPS法)制备了聚偏氟乙烯/碳酸钙(PVDF/CaCO3)共混膜。考察了不同冷却条件对共混膜的影响以及CaCO3含量对聚偏氟乙烯结晶温度、结晶度的影响;研究了酸处理对共混膜微观结构、力学性能的影响。实验表明,通过改变冷却条件可以控制球晶的大小以及膜表面皮层的厚度;随着CaCO3含量的增加,PVDF共混膜的水通量先增加后减少,拉伸强度不断增加。经酸处理之后,共混膜水通量显著提高,拉伸强度有所下降。     

TIPS法iPP中空纤维膜的拉伸性能研究

通过熔融共混等规聚丙烯(iPP)/邻苯二甲酸二丁酯(DBP)/邻苯二甲酸二辛酯(DOP)体系,采用热致相分离法(TIPS)制备iPP中空纤维膜,且在不同的拉伸温度及拉伸比下对中空纤维膜进行拉伸研究.对膜结构与透过性能进行了表征.采用环境扫描电子显微镜(SEM)对膜的内、外表面以及截面结构进行观测,发现拉伸后膜外表面的皮层以及膜结构得到有效改善.使用电子式万能试验机对中空纤维膜的拉伸强度进行了测试.随着拉伸温度和拉伸比的增加,膜的孔隙率、纯水通量以及拉伸强度均呈现先增大后减小的趋势.膜的孔隙率最大可提高35.3％,纯水通量提高了286.9％,拉伸强度可提高至6.86 MPa.nano-SiO2(纳米SiO2)添加的杂化膜经过拉伸后,孔隙率增大了46.8％,纯水通量提高了416.1％,拉伸强度提高了181.9％.研究表明:通过对iPP中空纤维膜进行拉伸处理,可以优化膜结构,并改善了膜表面皮层以及透过性能.     

PVDF/PVA共混膜的研究

采用湿法相转化法制备了聚偏氟乙烯(PVDF)/聚乙烯醇(PVA)共混膜,研究了PVDF/PVA共混体系的相容性,并讨论了PVDF/PVA共混比、固含量、添加剂浓度、凝固条件与后处理对膜结构及性能的影响.结果表明,PVDF/PVA为不相容体系,在成膜过程中产生界面微孔;随PVA含量增加,PVDF/PVA共混膜水通量先增大后减小,在PVDF/PVA为8/2时呈较大值,截留率变化趋势则相反;PVA的存在明显改善了PVDF/PVA共混膜的亲水性,表现为随其含量增加共混膜接触角明显减小;随固含量增加,膜厚度增加,孔隙率降低,水通量减小,截留率升高;添加剂PEG600浓度为6%时,孔隙率高,水通量大,但截留率低;凝固浴种类直接影响膜结构及性能;热处理可完善膜结构从而获得性能更优的膜.选择适当的铸膜条件可制成较好的膜产品,而且共混膜通量明显大于各组分通量的加权,表明共混是一种改善PVDF膜性能的有效方法.     

用正交设计研究PVDF/PVC/PMMA共混中空纤维膜

制备了PVDF(聚偏氟乙烯)/PVC(聚氯乙烯)/PMMA(聚甲基丙烯酸甲酯)三元共混中空纤维膜,讨论了影响膜性能的主要因素.正交实验结果表明:在PVDF/PVC/PMMA体系中,聚合物总浓度是影响膜的水通量的主要因素;PVDF浓度对膜强度影响最大;PMMA对膜的亲水性有较大的贡献.得到优化的制膜条件为:铸膜液中PVDF∶PVC∶PMMA=7∶1.2∶1.8(质量比),聚合物溶质的总质量分数为17%;添加剂吐温-80的质量分数为6%.     

PVC/PVDF/PMMA共混膜的研制

采用剪切黏度法对聚氯乙烯(PVC)/聚偏氟乙烯(PVDF)/聚甲基丙烯酸甲酯(PMMA)体系的相容性进行研究,结果表明,该体系为部分相容体系,在此基础上采用稀溶液黏度法对各共混配比的相容性进行预测.对相容性较好的PVC/PVDF/PMMA共混体系由相转化法制备共混膜,并用扫描电镜对共混膜的形态结构进行了观察.对共混膜的...     

制膜工艺条件对PVC/SPES共混膜性能的影响

采用溶剂-非溶剂扩散致相分离的方法,在不同制膜条件下(铸膜液聚合物含量、铸膜液温度、凝胶浴温度和凝胶浴组成)制备了PVC/SPES共混膜,并对膜的纯水通量、截留率、断裂强度、耐污染性能和膜的断面结构等性能进行了测试,从而探讨制膜工艺条件对PVC/SPES共混膜微观结构及性能的影响.通过对不同聚合物含量的共混膜的纯水通量、截留率、机械性能和耐污染性能测试比较,得到PVC/SPES共混膜的最佳制膜条件:聚合物质量分数为16％,铸膜液温度为70℃,凝胶浴温度为20℃,凝胶浴为纯水.     

热致相分离法制备超高分子量聚乙烯微孔膜

以液体石蜡为稀释剂，用热致相分离方法（TIPS）制备了超高分子量聚乙烯（UHMWPE）微孔膜。实验测定了UHMWPE／液体石蜡体系的相图，研究了冷却速率、UHMWPE初始浓度和分子量对膜结构及性能的影响，用扫描电子显微镜（SEM）及压汞法表征了微孔膜的微观结构及平均孔径和孔隙率，同时测试了膜的纯水通量。结果表明，UHMWPE／液体石蜡体系只存在由聚合物结晶导致的固-液相分离过程，UHMWPE初始浓度的增加或冷却速率的加快均可以导致膜平均孔径和水通量的减小；聚合物分子量影响着膜的结构与性能，聚合物分子量增加时，膜的孔径和水通量均逐渐减小。     

复合热致相分离制膜方法

系统介绍了北京坎普尔环保技术有限公司自主创新研发成功的复合热致相分离(complex Thermally Induced Phase Separation,简称为c-TIPS)制膜方法,并与经典的热致相分离(TIPS)制膜方法和修正热致相分离(m-TIPS)制膜方法作了比较.c-TIPS法以水溶性良溶剂和水溶性添加剂组成的混合物作为"复合稀释剂",在加热搅拌罐中,于聚合物熔点(Tm)以下的温度(一般为90～170℃)下形成聚合物/复合稀释剂体系的均相溶液,在相同温度或低5～10℃的温度下纺丝,通过控制芯液和冷却液的组成,利用同时或先后发生的热致相分离(TIPS)和非溶剂致相分离(NIPS)过程的复合相分离过程,制备了强度高、通量大、外表面有皮层(超滤膜)和没有皮层(微滤膜)的新型中空纤维(毛细管)多孔膜.该方法适用于几乎所有半结晶性和非结晶性制膜材料,例如,PVDF,PES,PS,PVC,PAN,PMMA,CA,等,所得膜的综合性能大大优于用NIPS法制备的同样材料的膜性能.     

聚乙二醇分子量对聚偏氟乙烯杂化膜的影响

通过非溶剂致相分离(NIPS)制备聚偏氟乙烯(PVDF)杂化平板膜,以N,N-二甲基乙酰胺(DMAC)为溶剂,氯化锂(LiCl)、聚乙烯吡咯烷酮(PVP-k30)为固定添加剂,分别以相同含量的不同分子量聚乙二醇(PEG)为亲水改性剂制备平板膜。实验结果表明不同分子量的PEG均能提高PVDF膜的亲水性和孔隙率,膜的水通量随PEG分子量的增加而先增加后减小,含PEG6000的PVDF膜纯水通量最大为1355.214L/(h·m2·atm),膜的孔隙率达到87.651%,膜表面接触角为70.2°,具有较好的亲水改性。选择合适的PEG分子量对膜改性效果具有重要的意义。     

Structural and optical properties of AlxOy/Pt/AlxOy multilayer absorber

We report on the microstructure and optical properties of Al_xO_y–Pt–Al_xO_y interference-type multilayer films, deposited by electron beam (e-beam) deposition onto corning 1737 glass, silicon (1 1 1) and copper substrates. The structural properties were investigated by Rutherford backscattering spectrometry, X-ray diffraction, scanning electron microscopy, energy dispersive X-ray spectroscopy and atomic force microscopy. The optical properties were extracted from specular reflection/transmission, diffuse reflectance and emissometer measurements. The stratification of the coatings consists of a semi-transparent middle Pt layer sandwiched between two layers of Al_xO_y. The top and bottom Al_xO_y layers were non-stoichiometric with no crystalline phases present. The Pt layer is in the fcc crystalline phase with a broad size distribution and spheroidal shape in and between the rims of Al_xO_y. The surface roughness of the stack was found to be comparable to the inter-particle distance. The optical calculations confirm a high solar absorptance of ∼0.94 and a low thermal emittance of ∼0.06 for the multilayer stack, which is attributed not only to the optimized nature of the multilayer interference stacks, but also to the specific surface morphology and texture of the coatings. These optical characteristics validate the spectral selectivity of the Al_xO_y–Pt–Al_xO_y interference-type multilayer stack for use in high temperature solar-thermal applications.     

Optimization of AlxOy/Pt/AlxOy multilayer spectrally selective coatings for solar-thermal applications

Spectrally selective Al_xO_y/Pt/Al_xO_y multilayer absorber coatings were deposited onto corning 1737 glass, Si (111) and copper substrates using electron beam (e-beam) vacuum evaporator at room temperature. The employment of ellipsometric measurements and optical simulation was proposed as an effective method to optimize and deposit multilayer solar absorber coatings. The optical constants (n and k) measured using spectroscopic ellipsometry, showed that both Al_xO_y layers, which used in the coatings, were dielectric in nature and the Pt layer was semi-transparent. The optimized multilayer coatings exhibited high solar absorptance α ∼ 0.94 ± 0.01 and low thermal emittance ? ∼ 0.06 ± 0.01 at 82 °C. The Rutherford backscattering spectroscopy (RBS) data of Al_xO_y/Pt/Al_xO_y multilayer absorber indicated the Al_xO_y layers present in the coating were nearly stoichiometry. The scanning electron microscope analysis (SEM) result indicated that the average diameter and inter-particles distance of Pt grains were statistically about 146 ± 0.17 nm and 6-10 ± 0.2 nm respectively.     

Interfacial microstructure of NiSix/HfO2/SiOx/Si gate stacks

Integration of NiSi_x based fully silicided metal gates with HfO₂ high-k gate dielectrics offers promise for further scaling of complementary metal-oxide- semiconductor devices. A combination of high resolution transmission electron microscopy and small probe electron energy loss spectroscopy (EELS) and energy dispersive X-ray analysis has been applied to study interfacial reactions in the undoped gate stack. NiSi was found to be polycrystalline with the grain size decreasing from top to bottom of NiSi_x film. Ni content varies near the NiSi/HfO_x interface whereby both Ni-rich and monosilicide phases were observed. Spatially non-uniform distribution of oxygen along NiSi_x/HfO₂ interface was observed by dark field Scanning Transmission Electron Microscopy and EELS. Interfacial roughness of NiSi_x/HfO_x was found higher than that of poly-Si/HfO₂, likely due to compositional non-uniformity of NiSi_x. No intermixing between Hf, Ni and Si beyond interfacial roughness was observed.     

Properties of CdxPb1−xTe thin films

Thin films of Cd_xPb_1?xTe have been grown on mica substrates using a flash evaporation technique and isothermal substrate heaters. The Cd concentration of the films was found to increase with decreasing substrate temperature and increasing deposition rates. The Hall coefficient changed from positive to negative with increasing substrate temperature, as did the Seebeck coefficient. Both these changes were associated with an increase in the rate of re-evaporation of Te and an improvement in the crystallinity of the films. Carrier mobilities less than bulk values were obtained; scattering mechanisms are discussed.     

Bibliography of high-Tcsuperconductivity

Bibliography of high-T _c superconductivity     

Synthesis of a new perovskite Pb(Li14Nb34)O3

A high-pressure technique was adopted to obtain perovskite-type $\text{Pb(Li}{}_{\mathrm{<mtext>1</mtext><mtext>4</mtext>}}\text{Nb}{}_{\mathrm{<mtext>3</mtext><mtext>4</mtext>}}\text{)}\text{O}{}_3$. A new perovskite $\text{Pb(Li}{}_{\mathrm{<mtext>1</mtext><mtext>4</mtext>}}\text{Nb}{}_{\mathrm{<mtext>3</mtext><mtext>4</mtext>}}\text{)}\text{O}{}_3$ was characterized to have a cubic symmetry with $\text{a}{}_{\mathrm{<mtext>o</mtext>}}\text{= 4.069}\text{A}\text{?}$; Li and Nb ions in the B-site of perovskite lattice may be in a random arrangement.     

Optical and electrical H/sub 2/- and NO/sub 2/-sensing properties of Au/In/sub x/O/sub y/N/sub z/ films

In this paper, we describe the optical and electrical gas-sensing properties of In/sub x/O/sub y/N/sub z/ films with an ultrathin gold promoter overlayer. We have fabricated In/sub x/O/sub y/N/sub z/ films with a nanocrystalline porous structure by RF-sputtering in Ar/N/sub 2/ followed by an annealing process. Gold particles with 20-30-nm diameter have been formed on top of the In/sub x/O/sub y/N/sub z/ films by dc sputtering and an annealing process. We have investigated the optical H/sub 2/and NO/sub 2/-sensing properties (change of absorbance) and also the electrical sensing effect (change of electrical resistance) for these two gases. A combined optical/electrical sensor for H/sub 2//NO/sub 2/ is proposed.     

Effect of pressure onTc in La2-xBaxCuO4 withx=0.125

The superconducting transition temperature,T _c , of La_2–x Ba _x CuO₄ has been measured under high pressure up to 8 GPa.T _c is found to change drastically at the pressure where the structural phase transition takes place. This finding clearly indicates that there exists an intimate relation between the crystal structure and superconductivity.     

t-Model mechanism of high-Tc cuprates

A doublon formalism ofd-p model Hubbard Hamiltonian is studied only with transfer integrals, and without the superexchange term. This gives excellent doping-dependent features ofT _c in high-T _c cuprates.