Failure mechanisms of lead-free chip scale package interconnections under fast mechanical loading

The reliability of chip scale package (CSP) components against mechanical shocks has been studied by employing statistical, fractographic, and microstructural research methods. The components having high tin (Sn0.2Ag0.4Cu) solder bumps were reflow soldered with the Sn3.8Ag0.7Cu (wt.%) solder paste on Ni(P)|Au- and organic solderability preservative (OSP)-coated multilayer printed wiring boards (PWBs), and the assemblies were subjected to the standard drop test procedure. The statistically significant difference in the reliability performance was observed: the components soldered on Cu|OSP were more reliable than those soldered on Ni(P)|Au. Solder interconnections on the Cu|OSP boards failed at the component side, where cracks propagated through the (Cu,Ni)₆Sn₅ reaction layer, whereas interconnections on the Ni(P)|Au boards failed at the PWB side exhibiting the brittle fracture known also as “black pad.” In the first failure mode, which is not normally observed in thermally cycled assemblies, cracks propagate along the intermetallic layers due to the strong strain-rate hardening of the solder interconnections in drop tests. Owing to strain-rate hardening, the stresses in the solder interconnections increase very rapidly in the corner regions of the interconnections above the fracture strength of the ternary (Cu,Ni)₆Sn₅ phase leading to intermetallic fracture. In addition, because of strain-rate hardening, the recrystallization of the as-soldered microstructure is hindered, and therefore the network of grain boundaries is not available in the bulk solder for cracks to propagate, as occurs during thermal cycling. In the black pad failure mode, cracks nucleate and propagate in the porous NiSnP layer between the columnar two-phase (Ni₃P+Sn) layer and the (Cu,Ni)₆Sn₅ intermetallic layer. The fact that the Ni(P)|Au interconnections fail at the PWB side, even though higher stresses are generated on the component side, underlines the brittle nature of the reaction layer.     

Failure Morphology after the Drop Impact Test of the Ball Grid Array Package with Lead-Free Sn-3.8Ag-0.7Cu on Cu and Ni Under-Bump Metallurgies

High strain-rate drop impact tests were performed on ball grid array (BGA) packages with lead-free Sn-3.8Ag-0.7Cu solder (in wt.%). Plated Ni and Cu under-bump metallurgies (UBMs) were used on the device side, and their drop test performances were compared. Failure occurred at the device side, exhibiting brittle interfacial fracture. For Ni UBM, failure occurred along the Ni/(Cu,Ni)₆Sn₅ interface, while the Cu UBM case showed failure along the interface between two intermetallics, Cu₆Sn₅/Cu₃Sn. However, the damage across the package varied. For Cu UBM, only a few solder balls failed at the device edge, whereas on Ni UBM, many more solder bumps failed. The difference in the failure behavior is due to the adhesion of the UBM and intermetallics rather than the intermetallic thickness. The better adhesion of Cu UBM is due to a more active soldering reaction than Ni, leading to stronger chemical bonding between intermetallics and UBM. In our reflow condition, the soldering reaction rate was about 4 times faster on Cu UBM than on Ni UBM.     

Influence of Cu content on compound formation near the chip side for the flip-chip Sn-3.0Ag-(0.5 or 1.5)Cu solder bump during aging

Sn-Ag-Cu solder is a promising candidate to replace conventional Sn-Pb solder. Interfacial reactions for the flip-chip Sn-3.0Ag-(0.5 or 1.5)Cu solder joints were investigated after aging at 150°C. The under bump metallization (UBM) for the Sn-3.0Ag-(0.5 or 1.5)Cu solders on the chip side was an Al/Ni(V)/Cu thin film, while the bond pad for the Sn-3.0Ag-0.5Cu solder on the plastic substrate side was Cu/electroless Ni/immersion Au. In the Sn-3.0Ag-0.5Cu joint, the Cu layer at the chip side dissolved completely into the solder, and the Ni(V) layer dissolved and reacted with the solder to form a (Cu_1−y,Ni_y)₆Sn₅ intermetallic compound (IMC). For the Sn-3.0Ag-1.5Cu joint, only a portion of the Cu layer dissolved, and the remaining Cu layer reacted with solder to form Cu₆Sn₅ IMC. The Ni in Ni(V) layer was incorporated into the Cu₆Sn₅ IMC through slow solid-state diffusion, with most of the Ni(V) layer preserved. At the plastic substrate side, three interfacial products, (Cu_1−y,Ni_y)₆Sn₅, (Ni_1−x,Cu_x)₃Sn₄, and a P-rich layer, were observed between the solder and the EN layer in both Sn-Ag-Cu joints. The interfacial reaction near the chip side could be related to the Cu concentration in the solder joint. In addition, evolution of the diffusion path near the chip side in Sn-Ag-Cu joints during aging is also discussed herein.     

Effects of substrate metallization of solder/under-bump metallization interfacial reactions in flip-chip packages during multiple reflow cycles

The effects of various elements of substrate metallization, namely, Au, Ni, and P, on the solder/under-bump metallization (UBM), (Al/Ni(V)/Cu) interfacial reactions in flip-chip packages during multiple reflow processes were systematically investigated. It was found that Au and P had negligible effects on the liquid-solid interfacial reactions. However, Ni in the substrate metallization greatly accelerated the interfacial reactions at chip side and degraded the thermal stability of the UBM through formation of a (Cu,Ni)₆Sn₅ ternary compound at the solder/UBM interface. This phenomenon can be explained in terms of enhanced grain-boundary grooving on (Cu,Ni)₆Sn₅ in the molten solder during the reflow process. This could eventually cause the rapid spalling of an intermetallic compound (IMC) from the solder/UBM interface and early failure of the packages. Our results showed that formation of multicomponent intermetallics, such as (Cu,Ni)₆Sn₅ or (Ni,Cu)₃Sn₄, at the solder/UBM interface is detrimental to the solder-joint reliability.     

Experimental evaluation of SnAgCu solder joint reliability in 100-μm pitch flip-chip assemblies

The intermetallic compound (IMC) evolution and the thermal–mechanical reliability of Sn–3.0Ag–0.5Cu (SAC305) solder joints were studied using air-to-air thermal shock testing of 100-μm-pitch peripheral-row flip chip assemblies. Flip chips assembled on organic substrates were subjected to air-to-air thermal shock testing between −55 °C and 125 °C, and the samples were removed at regular intervals for cross-sectioning and failure analysis. It was seen that on the die side, after 2000 cycles, all of the (Cu,Ni)₃Sn₄ had transferred to (Cu,Ni)₆Sn₅ due to strong cross-pad interaction between the chip-side Ni pad and substrate-side Cu pad, and thus, there was no premature solder cracking possibly due to the absence of dual IMC structure. On the substrate-side Cu interface, the Cu₃Sn growth was hindered, and thus there was very little increase in Kirkendall voids in the Cu₃Sn after 2000 cycles. Therefore, there was no premature brittle failure in the intermetallic. Failure analysis shows that the cracks in the outermost corner solder joint started to form after 2000 cycles near the chip-side pad, and the cracks propagated in the solder matrix around the IMC like a ring to create solder open. From the experimental data, crack propagation rate equation parameters and characteristic mean life were determined.     

Interfacial reaction and failure mode analysis of the solder joints for flip-chip LED on ENIG and Cu-OSP surface finishes

The interfacial reactions and failure modes of the solder joints for flip-chip light emitting diode (LED) on electroless nickel/immersion gold (ENIG) and Cu with organic solderability preservatives (Cu-OSP) surface finishes were investigated in this study. The experimental results demonstrate that the interfacial reactions in the Au/Sn–Ag–Cu(SAC)/ENIG and Au/SAC/Cu systems are different but the failure mechanisms of the two types of solder joints are similar during the shear test. For the Au/SAC/ENIG system, the Au layer on the surface finish of the diodes dissolved into the molten solder and transformed into a continuous (Au, Ni)Sn₄ IMC layer at the diode/solder interface during reflow and the interfacial IMC at the solder/ENIG interface is dendritic Ni₃Sn₄ IMC grains which are surrounded by (Au, Ni)Sn₄. For the Au/SAC/Cu system, however, no IMC layers can be observed at the diode/solder interface. The interfacial IMC at the solder/Cu interface is (Cu, Au)₆Sn₅ and a Cu₃Sn IMC layer at the (Cu, Au)₆Sn₅/Cu interface. Tiny (Au, Cu)Sn₄ IMC grains distribute in the solder layer and surround the (Cu, Au)₆Sn₅ grains. For the two types of systems, the primary failure mode for the cathode is due to the broken of the Si-based insulation layer which led to a high residue stress and poor connection between the Si-based layer and the solder layer. Meanwhile, the failure of the solder joint for the anode is mainly because of the failure of the solder layer under the conductive via. The crack generally forms at this area and then propagated along the diode or the diode/solder interface.     

Tensile and Fatigue Behaviors of Aged Cu/Sn-4Ag Solder Joints

Tensile properties and stress-controlled fatigue fracture behaviors of Cu/Sn-4Ag solder joints aged at 180°C for different times were systematically investigated. It was found that the tensile strength of the solder joints decreased with increasing aging time and that the fracture mode changed from ductile to brittle. The fatigue life of the solder joints also decreased with increasing aging time. For most of the solder joints, fatigue cracks tended to initiate around the Cu/Cu₆Sn₅ interfaces due to the strain incompatibility and local strain concentration on a micro-scale, and they then propagated within the solder proximately along the Cu/Cu₆Sn₅ interfaces. The samples aged for␣different times or tested under different stress amplitudes had similar fractography morphologies, which consisted mainly of a propagation region, covered by solder, and a final fracture region. Based on the experimental observations above, the corresponding interfacial fatigue failure mechanisms were discussed in terms of different influencing factors.     

Intermetallic reactions in Sn3Ag0.5Cu and Sn3Ag0.5Cu0.06Ni0.01Ge solder BGA packages with Au/Ni surface finishes

The intermetallic compounds (IMCs) formed during the reflow and aging of Sn3Ag0.5Cu and Sn3Ag0.5Cu0.06Ni0.01Ge solder BGA packages with Au/Ni surface finishes were investigated. After reflow, the thickness of (Cu, Ni, Au)₆Sn₅ interfacial IMCs in Sn3Ag0.5Cu0.06Ni0.01Ge was similar to that in the Sn3Ag0.5Cu specimen. The interiors of the solder balls in both packages contained Ag₃Sn precipitates and brick-shaped AuSn₄ IMCs. After aging at 150°C, the growth thickness of the interfacial (Ni, Cu, Au)₃Sn₄ intermetallic layers and the consumption of the Ni surface-finished layer on Cu the pads in Sn3Ag0.5Cu0.06Ni0.01Ge solder joints were both slightly less than those in Sn3Ag0.5Cu. In addition, a coarsening phenomenon for AuSn₄ IMCs could be observed in the solder matrix of Sn3Ag0.5Cu, yet this phenomenon did not occur in the case of Sn3Ag0.5Cu0.06Ni0.01Ge. Ball shear tests revealed that the reflowed Sn3Ag0.5Cu0.06Ni0.01Ge packages possessed bonding strengths similar to those of the Sn3Ag0.5Cu. However, aging treatment caused the ball shear strength in the Sn3Ag0.5Cu packages to degrade more than that in the Sn3Ag0.5Cu0.06Ni0.01Ge packages.     

Optimization of Pb-Free Solder Joint Reliability from a Metallurgical Perspective

To obtain the desired performance of Pb-free packages in mechanical tests, while the solder composition should be carefully selected, the influence of metals dissolved from the soldering pad or under bump metallization (UBM) should also be taken into account. Dissolved metals such as Cu can alter the intermetallic compound (IMC) formation, not only at the local interface but also on the other side of the joint. The high rate of interfacial cracking of Sn-Ag-Cu solder joints on Ni/Au-plated pads is attributed to the high stiffness of the solder and the dual IMC structure of (Cu,Ni)₆Sn₅ on Ni₃Sn₄ at the interface. Approaches to avoid this dual IMC structure at the interface are discussed. A rule for selecting the solder alloy composition and the pad surface materials on both sides of the joints is proposed for ball grid array (BGA) packages.     

Intermetallic formation in Sn3Ag0.5Cu and Sn3Ag0.5Cu0.06Ni0.01Ge solder BGA packages with immersion Ag surface finish

The intermetallic compounds formed in Sn3Ag0.5Cu and Sn3Ag0.5Cu0.06Ni0.01Ge solder BGA packages with Ag/Cu pads are investigated. After reflow, scallop-shaped η-Cu₆Sn₅ and continuous planar η-(cu_0.9Ni_0.1)₆Sn₅ intermetallics appear at the interfaces of the Sn3Ag0.5Cu and Sn3Ag0.5Cu0.06Ni0.01Ge solder joints, respectively. In the case of the Sn3Ag0.5Cu specimens, an additional ε-Cu₃Sn intermetallic layer is formed at the interface between the η-Cu₆Sn₅ and Cu pads after aging at 150°C, while the same type of intermetallic formation is inhibited in the Sn3Ag0.5Cu0.06Ni0.01Ge packages. In addition, the coarsening of Ag₃Sn precipitates also abates in the solder matrix of the Sn3Ag0.5Cu0.06Ni0.01Ge packages, which results in a slightly higher ball shear strength for the specimens.     

Electromigration Reliability and Morphologies of Cu Pillar Flip-Chip Solder Joints with Cu Substrate Pad Metallization

The Cu pillar is a thick underbump metallurgy (UBM) structure developed to alleviate current crowding in a flip-chip solder joint under operating conditions. We present in this work an examination of the electromigration reliability and morphologies of Cu pillar flip-chip solder joints formed by joining Ti/Cu/Ni UBM with largely elongated ∼62 μm Cu onto Cu substrate pad metallization using the Sn-3Ag-0.5Cu solder alloy. Three test conditions that controlled average current densities in solder joints and ambient temperatures were considered: 10 kA/cm² at 150°C, 10 kA/cm² at 160°C, and 15 kA/cm² at 125°C. Electromigration reliability of this particular solder joint turns out to be greatly enhanced compared to a conventional solder joint with a thin-film-stack UBM. Cross-sectional examinations of solder joints upon failure indicate that cracks formed in (Cu,Ni)₆Sn₅ or Cu₆Sn₅ intermetallic compounds (IMCs) near the cathode side of the solder joint. Moreover, the ~52-μm-thick Sn-Ag-Cu solder after long-term current stressing has turned into a combination of ~80% Cu-Ni-Sn IMC and ~20% Sn-rich phases, which appeared in the form of large aggregates that in general were distributed on the cathode side of the solder joint.     

Microstructures and degradation of heat sink very-thin quad flat package no-leads Pb-free Sn-Ag-Cu solder joints after thermal aging

Heat sink very-thin quad flat package no-leads (HVQFN) packages soldered with Sn-3.8Ag-0.7Cu on metallized laminate substrates have been put to thermal aging. Temperatures from 140°C to 200°C for times up to 30 weeks were applied. The solder joint microstructure develops intermetallic compound layers and voids within the solder. Due to this, the mechanical reliability of the HVQFN inner lead solder joints is degraded. The intermetallic layers are of the type (Cu, Y)₆Sn₅, with Y=Ni, Au or Ni+Au, as well as Cu₃Sn, and follow a power law with aging time: X=C·tⁿ, where n=0.4 to 1.9 depending on temperature. The voids within the solder are attributed to Sn depletion of the solder in favor of the growth of (Cu,Ni)₆Sn₅. They are more pronounced the less the solder volume is in proportion to the intermetallic diffusion area. The amount of voids is quantified as a percentage of the residual solder. The time to reach the failure criterion of 50%, i.e., t_50%, is related to the absolute temperature according to an Arrhenius equation with an activation energy E_a=0.95 eV. This equation is used for determination of the maximum allowable temperature at a certain required operating lifetime.     

Inhibiting the formation of (Au1−xNix)Sn4 and reducing the consumption of Ni metallization in solder joints

The effects of adding a small amount of Cu into eutectic PbSn solder on the interfacial reaction between the solder and the Au/Ni/Cu metallization were studied. Solder balls of two different compositions, 37Pb-63Sn (wt.%) and 36.8Pb-62.7Sn-0.5Cu, were used. The Au layer (1 ± 0.2 μm) and Ni layer (7 ± 1 μm) in the Au/Ni/Cu metallization were deposited by electroplating. After reflow, the solder joints were aged at 160°C for times ranging from 0 h to 2,000 h. For solder joints without Cu added (37Pb-63Sn), a thick layer of (Au_1−xNi_x)Sn₄ was deposited over the Ni₃Sn₄ layer after the aging. This thick layer of (Au_1−xNi_x)Sn₄ can severely weaken the solder joints. However, the addition of 0.5wt.%Cu (36.8Pb-62.7Sn-0.5Cu) completely inhibited the deposition of the (Au_1−xNi_x)Sn₄ layer. Only a layer of (Cu_1-p-qAu_pNi_q)₆Sn₅ formed at the interface of the Cu-doped solder joints. Moreover, it was discovered that the formation of (Cu_1-p-qAu_pNi_q)₆Sn₅ significantly reduced the consumption rate of the Ni layer. This reduction in Ni consumption suggests that a thinner Ni layer can be used in Cu-doped solder joints. Rationalizations for these effects are presented in this paper.     

Shear and Pull Testing of Sn-3.0Ag-0.5Cu Solder with Ti/Ni(V)/Cu Underbump Metallization During Aging

Ti/Ni(V)/Cu underbump metallization (UBM) is widely used in flip-chip technology today. The advantages of Ti/Ni(V)/Cu UBM are a low reaction rate with solder and the lack of a magnetic effect during sputtering. Sn atoms diffuse into the Ni(V) layer to form a Sn-rich phase, the so-called Sn-patch, during reflow and aging. In this study, the relationship between interfacial reaction and mechanical properties of the solder joints with Ti/Ni(V)/Cu UBM was evaluated. Sn-3.0Ag-0.5Cu solder was reflowed on sputtered Ti/Ni(V)/Cu UBM, and then the reflowed samples were aged at 125°C and 200°C, respectively. (Cu,Ni)₆Sn₅ was formed and grew gradually at the interface of the solder joints during aging at 125°C. The Sn-patch replaced the Ni(V) layer, and (Ni,Cu)₃Sn₄ was thus formed between (Cu,Ni)₆Sn₅ and the Sn-patch at 200°C. The Sn-patch, composed of Ni and V₂Sn₃ after reflow, was transformed to V₂Sn₃ and amorphous Sn during aging. Shear and pull tests were applied to evaluate the solder joints under various heat treatments. The shear force of the solder joints remained at 421 mN, yet the pull force decreased after aging at 125°C. Both the shear and pull forces of the solder joints decreased during aging at 200°C. The effects of aging temperature on the mechanical properties of solder joint were investigated and discussed.     

Interfacial reactions and shear strengths between Sn-Ag-based Pb-free solder balls and Au/EN/Cu metallization

The morphological and compositional evolutions of intermetallic compounds (IMCs) formed at three Pb-free solder/electroless Ni-P interface were investigated with respect to the solder compositions and reflow times. The three Pb-free solder alloys were Sn3.5Ag, Sn3.5Ag0.75Cu, and Sn3Ag6Bi2In (in wt.%). After reflow reaction, three distinctive layers, Ni₃Sn₄ (or Ni-Cu-Sn for Sn3.5Ag0.75Cu solder), NiSnP, and Ni₃P, were formed on the electroless Ni-P layer in all the solder alloys. For the Sn3.5Ag0.75Cu solder, with increasing reflow time, the interfacial intermetallics switched from (Cu,Ni)₆Sn₅ to (Cu,Ni)₆Sn₅+(Ni,Cu)₃Sn₄, and then to (Ni,Cu)₃Sn₄ IMCs. The degree of IMC spalling for the Sn3.5Ag0.75Cu solder joint was more than that of other solders. In the cases of the Sn3.5Ag and Sn3Ag6Bi2In solder joints, the growth rate of the Ni₃P layer was similar because these two type solder joints had a similar interfacial reaction. On the other hand, for the Sn3.5Ag0.75Cu solder, the thickness of the Ni₃P and Ni-Sn-P layers depended on the degree of IMC spalling. Also, the shear strength showed various characteristics depending on the solder alloys and reflow times. The fractures mainly occurred at the interfaces of Ni₃Sn₄/Ni-Sn-P and solder/Ni₃Sn₄.     

Reactive interdiffusion between a lead-free solder and Ti/Ni/Ag thin-film metallizations

The reactive interdiffusion between a Sn-3.0wt.%Ag-0.7wt.%Cu solder and thin-film Ti/Ni/Ag metallizations on two semiconductor devices, a diode and a metal-oxide-semiconductor field-effect transistor (MOSFET), and a Au-layer on the substrates are studied. Comprehensive microanalytical techniques, scanning electron microscopy, transmission electron microscopy (TEM), and analytical electron microscopy (AEM) are employed to identify the interdiffusion processes during fabrication and service of the devices. During the reflow process of both diode and MOSFET devices, (1) the Ag layer dissolves in the liquid solder; (2) two intermetallics, (Ni,Cu)₃Sn₄ and (Cu,Ni)₆Sn₅, form near the back metal/solder interface; and (3) the Au metallization in the substrate side dissolves in the liquid solder, resulting in precipitation of the (Au,Ni,Cu)Sn₄ intermetallic during solidification. During solid-state aging of both diode and MOSFET solder joints at 125°C and 200°C, the following atomic transport processes occur: (1) interdiffusion of Cu, Ni, and Sn, leading to the growth of a (Ni,Cu)₃Sn₄ layer until the Ni layer is completely consumed; (2) interdiffusion of Au, Cu, Ni, and Sn through the (Ni,Cu)₃Sn₄ layer and unconsumed Ni layer to the Ti layer to form a solid solution; and (3) further interdiffusion of Au, Cu, Ni, and Sn through the (Ni,Cu)₃Sn₄ layer to from an (Au,Ti,Ni,Cu)Sn₄ layer. The growth of the latter layer continues until the entire Ti layer is consumed.     

Reliability investigation and interfacial reaction of ball-grid-array packages using the lead-free Sn-Cu solder

The interfacial reactions between two Sn-Cu (Sn-0.7Cu and Sn-3Cu, wt.%) ball-grid-array (BGA) solders and the Au/Ni/Cu substrate by solid-state isothermal aging were examined at temperatures between 70°C and 170°C for 0 to 100 days. For the Sn-0.7Cu solder, a (Cu,Ni)₆Sn₅ layer was observed in the samples aged at 70–150°C. After isothermal aging at 170°C for 50 days, the solder/Ni interface exhibited a duplex structure of (Cu,Ni)₆Sn₅ and (Ni,Cu)₃Sn₄. For the Sn-3Cu solder, only the (Cu,Ni)₆Sn₅ layer was formed in all aged samples. Compared to these two Sn-Cu solders, the Cu content in the (Cu,Ni)₆Sn₅ layer formed at the interface increased with the Cu concentration in the Sn-xCu solders. And, the shear strength was measured to evaluate the effect of the interfacial reactions on the mechanical reliability as a function of aging conditions. The shear strength significantly decreased after aging for 1 day and then remained nearly unchanged by further prolonged aging. In all the samples, the fracture always occurred in the bulk solder. Also, we studied the electrical property of Cu/Sn-3Cu/Cu BGA packages with the number of reflows. The electrical resistivity increased with the number of reflows because of an increase of intermetallic compound (IMC) thickness.     

Effects of the gold thickness of the surface finish on the interfacial reactions in flip-chip solder joints

The effects of Au thickness on the flip-chip solder joints with Cu/Ni/Al underbump metallurgy (UBM) on one end and the Au/Ni surface finish on another was studied. Two different thicknesses, 0.1 μm and 0.65 μm, were used for the surface finish. After assembly, the joints were subjected to thermal aging at 150°C. The difference in Au thickness had a strong effect on the consumption rate of the Ni layer in the UBM as well as on the failure mode of the solder joints. When the Au layer was thin (0.1 μm), the dissolved Cu from the Cu/Ni UBM was able to inhibit the formation of AuSn₄. When the Au layer was thick (0.65 μm), the dissolved Cu was not able to inhibit the formation of AuSn₄. These AuSn₄ enhanced the Ni consumption rate of the UBM. The presence of a large amount of AuSn₄ inside the solder also weakened the solder because of the Au embrittlement effect. In view of these observations, the gold thickness on the Au/Ni surface finish must be kept to the minimum controlled in order to prolong the service life of flip-chip packages.     

Impact of Ni concentration on the intermetallic compound formation and brittle fracture strength of Sn–Cu–Ni (SCN) lead-free solder joints

Cu₆Sn₅ and Cu₃Sn are common intermetallic compounds (IMCs) found in Sn–Ag–Cu (SAC) lead-free solder joints with OSP pad finish. People typically attributed the brittle failure to excessive growth of IMCs at the interface between the solder joint and the copper pad. However, the respective role of Cu₆Sn₅ and Cu₃Sn played in the interfacial fracture still remains unclear. In the present study, various amounts of Ni were doped in the Sn–Cu based solder. The different effects of Ni concentration on the growth rate of (Cu, Ni)₆Sn₅/Cu₆Sn₅ and Cu₃Sn were characterized and compared. The results of characterization were used to evaluate different growth rates of (Cu, Ni)₆Sn₅ and Cu₃Sn under thermal aging. The thicknesses of (Cu, Ni)₆Sn₅/Cu₆Sn₅ and Cu₃Sn after different thermal aging periods were measured. High speed ball pull/shear tests were also performed. The correlation between interfacial fracture strength and IMC layer thicknesses was established.     

随机振动载荷下板级焊点失效模式分析

通过搭建振动加速失效实验平台,完成了芯片中板级焊点的失效实验。在此基础上,对焊点进行电镜观察分析,以确定焊点在振动载荷下的失效模式。结果表明,内部焊点基本没有裂纹扩展迹象,裂纹集中于最外侧角的焊点,焊点的损伤程度分布从内至外呈递增趋势。裂纹的分布集中于PCB板侧和芯片侧的IMC层区域,即在焊点两侧的钎料疏松部位,并沿着IMC层区域的Cu₆Sn₅晶粒方向进行穿晶、沿晶扩展。裂纹的扩展接近于贯穿时,易发生瞬间脆性断裂。