Inter-granular exchange coupling and magnetic anisotropy of Ta/Ru/Co-23 at%Pt perpendicular thin films with different Ru underlayer thicknesses

In the present work, a series of Ta/Ru/Co-23 at%Pt thin films with varied Ru underlayer thicknesses were fabricated by magnetron sputtering. All of the films show c-axis preferred orientation perpendicular to the film surface. The drop of c/a ratio and lattice expansion of Co–Pt layer with the increase in Ru underlayer thickness was revealed by X-ray diffraction(XRD). The coercivity of the Ta/Ru/Co–Pt thin films increases drastically with Ru underlayer thickness increasing, due to the enhancement of effective magneto-crystalline anisotropy constant and exchange decoupling of magnetic nano-grains. The enhancement of effective magneto-crystalline anisotropy constant is ascribed to the lattice deformation of Co–Pt layer by mismatching the Ru layer and Co–Pt surface.Moreover, the exchange decoupling of magnetic nanograins is attributed to the further isolation of magnetic nano-grains.     

FERROMAGNETIC RESONANCE STUDIES OF Co/CoFe_2O_4 MULTILAYERS

1.IntroductionMultilayershaveattractedconsiderableattentionfromfundamentalandtechnologicalinterests.Manynewphenomenainmetal-metalmultilayers,suchasthereductionorenhancementofmagnetizationatinterfaces[1],themagneticanisotropyl'1,theoscillatoryinterlay...     

Magnetic anisotropy of Co/Cu/Co nanocrystalline films upon magnetic annealing

The magnetic anisotropy of Co/Cu/Co films with the thickness of the copper spacer corresponding to the antiferromagnetic and ferromagnetic indirect exchange coupling between Co layers has been studied. The films deposited on naturally oxidized (111) Si single crystals were produced by magnetron sputtering. The films were annealed at 240°C. Such an annealing virtually neither changes the grain size nor leads to the mixing of layers; i.e., no disturbance of the coupling type between the cobalt layers takes place. Changes in the surface and induced magnetic anisotropy and in the effective energy of indirect exchange coupling have been studied upon annealing in the presence and absence of a magnetic field. It has been found that the shape of surface inhomogeneities in the films changes upon annealing in the magnetic field applied along the film plane, which substantially affects, the surface anisotropy. In the films characterized by antiferromagnetic coupling, the easy axis of magnetization is induced only in the magnetic fields exceeding the saturation field. The induced-anisotropy constant estimated theoretically agrees well with those determined experimentally.     

快淬工艺对Mg2Ni型合金气态及电化学贮氢动力学的影响

以聚苯乙烯胶体晶体为模板,通过调制溅射功率和溅射时间制备了相同厚度、不同孔间距的Co有序大孔阵列.利用扫描电子显微镜(SEM)、原子力显微镜(AFM)、X射线衍射(XRD)和振动样品磁强计(VSM)考察了样品的结构和磁学特性.发现Co有序大孔阵列的矫顽力和剩磁比最大达到175.02×10-4 T和0.76,分别为Co薄膜的2.2倍和2.5倍,并且随孔间距的增大逐渐降低.结合理论分析结果表明,Co有序大孔阵列本身的形状各向异性是其取得优良磁学性能的原因,孔洞形状各向异性和薄膜本身磁晶各向异性的竞争机制是造成其磁性发生变化的物理本质.     

Tm元素对SmCo_5晶体结构与磁性能的影响（英文）EI北大核心CSCD

采用X射线衍射分析(XRD)和磁性能测试等方法,分析了Tm元素掺杂对Sm Co5晶体结构和内禀磁性能的影响。XRD测试结果表明:Sm Co5和Sm0.8Tm0.2Co5.2均为Ca Cu5结构,掺杂Tm元素后,晶格常数c值增大,而a,b与晶胞体积减小;M-T曲线测试结果表明:Sm Co5和Sm0.8Tm0.2Co5.2的居里温度分别为957和965 K;在测试外加场为7 T的条件下,300 K时Sm Co5的各向异性场HA和饱和磁化强度M7T均高于Sm0.8Tm0.2Co5.2;当温度升高至473 K,Sm Co5的HA和M7T要低于Sm0.8Tm0.2Co5.2,说明Sm Co5中进行Tm元素掺杂可以有效的改善其在高温条件下的磁性能。     

Structure and magnetic properties of columnar Fe-N thin films deposited by direct current magnetron sputtering

Columnar Fe-N thin films with thickness ranging from 30 to 150 nm were deposited by direct current magnetron sputtering using an Ar/N2 gas mixture (V(N2)/V(N2+Ar)=5%) on corning glass substrates. The structure, surface morphology and magnetic properties were investigated using X-ray diffractometry(XRD), scanning electron microscopy, atomic force microscopy, transmission electron microscopy(TEM) and superconducting quantum interference magnetometry. XRD investigation shows that Fe-N films exhibit amorphous-like structures; however, TEM measurements indicate the synthesis of mixture phases of α-Fe+ζ-Fe2N+ε-Fe3N in these films. The magnetic anisotropy and coercivity of Fe-N thin films exhibit strong dependence on the film growth behavior and surface morphology. With increasing the height of Fe-N films with column structures, the coercivity increases from 7.96 kA/m to 22.28 kA/m in the direction parallel to the film surface. In perpendicular direction the coercivity only increases slightly from 39.79 kA/m to 43.77 kA/m. However, the values of anisotropy field increase from 0.79×106 to 1.44×106 A/m, which is mainly attributed to the shape anisotropy of elongated columns due to the fact that the difference of magneto-crystalline anisotropy among these Fe-N films is small. The saturation magnetizations of Fe-N films vary with increasing film thickness from 23.5 to 85.1 A-m2/kg.     

电沉积Co-W合金薄膜的性能研究

柠檬酸盐存在的酸性镀液qa(pH=4.0),通过改变[WO42-]/[Co2+]比值电沉积制备了Co-W合金薄膜.使用XRD对薄膜的微结构和相组成进行了分析,结果表明沉积态时,Co-W合金薄膜具有晶态结构;随着薄膜中Co、W含量的不同,薄膜从富Co的面心立方相向Co+Co7W6+Co3W共存相转变.采用FE-SEM对薄膜表面形貌和组成分析表明:Co-W合金薄膜中Co含量较高,随着镀液中[WO42-[Co2+]比值的增加,薄膜中W含量会增加,膜面逐渐变得致密;当镀液中[WO42-]/[Co2+]=0.5时,薄膜中W含量达到最大值,同时膜面上出现大量气孔.通过VSM对薄膜磁性能进行了测试,结果显示Co-W合金薄膜的易磁化轴平行于膜面.     

Co/Pt multilayer-based pseudo spin valves with perpendicular magnetic anisotropy

Pseudo spin valves(SVs) exhibiting perpendicular magnetic anisotropy were prepared by magnetron sputtering. Magnetization measurements of the Co/Pt multilayers were performed to select the reference and free layers. The selection criteria are square magnetic hysteresis loops, weaker current shunting effect, and proper coercivity. The optimal reference layer and free layer are Pt(5.0 nm)/[Co(0.4 nm)/Pt(0.6 nm)]3/Co(0.4 nm)/Cu(3.0 nm)and Cu(3.0 nm)/[Co(0.4 nm)/Pt(1.5 nm)]4, respectively.The resulting pseudo SV exhibits two well-separated hysteresis loops when the field is applied perpendicular to the film plane. The minor hysteresis loop corresponding to the free layer shifts toward negative direction of the magnetic field axis, indicating ferromagnetic interlayer exchange coupling between the two magnetic layers. The coupling also enhances the coercivity(HC) of both layers. The perpendicular giant magnetoresistance(GMR) of 2.7 % is achieved with current in plane measurement. The GMR first increases when Pt seed layer is thickened, reaches a maximum of 3.0 % at 4 nm and then decreases with the further increase of thickness. But thicker Cu spacer layer always lowers the GMR of the SV.     

Ru籽晶层对CoCrPt-SiO_2垂直记录层形貌及结构的影响

采用磁控溅射方法,制备了以不同厚度Ru薄膜为籽晶层的CoCrPt-SiO2垂直磁记录薄膜。利用原子力显微镜(AFM)、透射电镜(TEM)分析Ru薄膜的结构和形貌,并研究了其结构对CoCrPt-SiO2薄膜表面形貌、粗糙度及结构的影响。结果表明,CoCrPt-SiO2记录层的晶粒尺寸和粗糙度均随着Ru籽晶层厚度的增加而增加,薄而粗糙的籽晶层适合于高密度磁记录介质。对于CoCrPt-SiO2记录层晶粒的优化,厚度为70nm的Ru籽晶层有利于记录层薄膜晶粒的完全隔离,从而提高了磁记录性能。     

Microstructure and magnetic properties of Ti/Co/Ti films

The two series of as-deposited and annealed Ti/Co/Ti thin films were deposited by magnetron sputtering onto glass substrates at room temperature. The structural and magnetic properties of the films at room temperature were investigated as function of Co layer thickness. X-ray diffraction (XRD) profiles show Co nanograins are formed as the hexagonal-close-packed (hcp) structure. The perpendicular coercivity of the Ti(15 nm)/Co(30 nm)/Ti(15 nm) film annealed at 450 ℃ for 30 min is about 288 kA·m-1 .     

高速钢W18Cr4V离子渗氮层组织对TiN膜与基体结合强度的影响

采用Ｗ１８Ｃｒ４Ｖ高速钢进行离子渗氮－ＰＥＣＶＤ ＴｉＮ复合处理,运用透射电子显微镜、Ｘ射线衍射仪和光学显微镜研究试样的表层组织结构。采用连续压入法研究ＴｉＮ膜与基体的结合强度,结果表明,离子渗氮能够提高膜基结合强度,通过分析渗氮层与膜－基界面的组织特点,认为ＴｉＮ膜在渗氮层上一些与其具有相同或相似晶体结构的氮化物上外延生长,以及强度较高的渗氮层对膜的支撑是基体渗氮提高膜－基结合强度的两大因素。     

Influence of Oblique Sputtering on Stripe Magnetic Domain Structure and Magnetic Anisotropy of CoFeB Thin FilmsEI北大核心CSCD

Magnetic anisotropy is one of the most important fundamental properties of magnetic thin film. The strength of magnetic anisotropy determines the ferromagnetic resonance frequency of magnetic films in the high-frequency applications. Because of the directionality of conventional static magnetic anisotropy in magnetic film, the high-frequency device usually shows an obvious directionality. When the microwave magnetic fi eld deviates from the perpendicular direction of magnetic anisotropy, the devices cannot reveal their best performance. The magnetic film with a stripe magnetic domain structure displays an in-plane rotatable magnetic anisotropy, which can be an important strategy to solve the problem of magnetic fi eld orientation dependent performance in high-frequency device. Therefore, the magnetic domain, the magnetic anisotropy, and the high-frequency behaviors for magnetic fi lms with a stripe magnetic domain structure have received extensive attention. Previously, most of the studies focused on the stripe magnetic domain structure of polycrystalline thin films. However, less attention was paid on amorphous magnetic thin films. Since the amorphous magnetic films have no long-range ordered crystal structure, no magnetocrystalline anisotropy, no grain boundary defects resistance hindering the domain wall displacement, they usually show excellent soft magnetic properties and have been widely applied in high-frequency devices. CoFeB alloy is one of the most important amorphous magnetic materials and has been extensively applied in various spintronic devices. In this work, amorphous CoFeB magnetic thin films were prepared by using a method of oblique sputtering technique at room temperature. The influences of oblique sputtering on the stripe magnetic domain structure, the in-plane static magnetic anisotropy, the in-plane rotational magnetic anisotropy, and the perpendicular magnetic anisotropy of the amorphous CoFeB films were studied by scanning probe microscope, vibrating sample magnetometer, ferromagnetic resonance. It is found that the method of oblique sputtering could effectively reduce the critical thickness for the appearance of stripe magnetic domain in amorphous CoFeB films. For a non-oblique sputtered CoFeB film, the critical thickness for the appearance of the stripe magnetic domain is above 240 nm. In contrast, after been subjected to the oblique sputtering, the critical thickness becomes below 240 nm. The different magnetic characterizations indicate that for the growth of CoFeB films with stripe magnetic domain structure, the oblique sputtering could not only enhance the strength of in-plane static magnetic anisotropy, but also improve the in-plane rotational magnetic anisotropy and the perpendicular magnetic anisotropy. All of the magnetic anisotropies are increased with the angle of oblique sputtering. The observation results of XRD and TEM prove that the prepared CoFeB thin films tend to amorphous structure. The characterization of SEM observation indicates that although the amorphous CoFeB films do not possess long-range ordered crystalline structure, they still could form a kind of columnar structure. The slanted columnar structure of CoFeB films could significantly increase the perpendicular magnetic anisotropy, thus lead to the appearance of stripe magnetic domain structure.     

Effect of Ti layer thickness on microstructure and magnetic properties of Ti/Co/Ti films

TiCoTi granular films were prepared by DC facing-target magnetron sputtering system onto glass substrates and subsequently in situ annealing in vacuum. Structural of Ti ( t nm)/Co (40 nm)/Ti ( t nm) films were investigated in detail, which shows that the majority Co nanograins are formed as the hexagonal-close-packed (HCP) structure. Vibrating sample magnetometer (VSM) and scanning probe microscope (SPM) were applied to study the magnetic properties, morphologies and domain structures of these samples. It has been found that the structure and magnetic properties of the Ti/Co/Ti films depend strongly on the Ti layer thickness. The out-of-plane coercivities ( Hc) of the film is maximum about 78.8 kA·m-1 when t =5 nm with annealing at 300 ℃; the distributing of grains of the sample is uniformity; and the average size of particles is about 13 nm. The obtained results suggest that this system is perpendicular anisotropy and might be applicable to perpendicular magnetic recording media.     

Co基赫斯勒合金研究进展

Co基赫斯勒合金是一类具有高度有序晶体结构的金属间化合物,其化学组成常用Co2XY表示,其中X为过渡金属元素,Y为主族元素。相比于其他材料,它具有更高的自旋极化率、更高的居里温度以及更低的阻尼因子。基于这些优良特性使得Co基赫斯勒合金在自旋阀、隧道结及半导体自旋场效应管等自旋电子学器件中具有巨大的应用前景。本文回顾了近年来国际上关于的Co基赫斯勒合金在垂直磁各向异性和自旋轨道转矩上的研究,从合金成分、微观结构、磁性层的厚度、缓冲层的材料、氧化物层的材料、元素扩散等方面总结了垂直磁各向异性和自旋轨道转矩的影响因素。对垂直磁各向异性和自旋轨道转矩的影响因素的总结有助于我们更好地理解其深层物理机制以及在未来研究中的挑战与前景。     

Magnetization and coercivity in Co/Pt multilayers with constant total Co layer thickness

Co/Pt multilayers with perpendicular anisotropy were deposited using a dc magnetron sputtering system under high vacuum. Magnetization process was investigated by the measurement of magnetic components parallel and perpendicular to the applied field. A dependence of the coercivity of Co/Pt multilayers on the Co layer thickness was reported, in which the total thickness of Co layers kept constant. It is observed that the coercivity increases with the increment of Co layer thickness. For the samples with the same Co layer thickness while different total Co layer thickness, the coercivity first increases and then decreases with the increase of the total thickness of Co layers. This effect could be attributed to the competition between the reduction of HC related to incoherent reversal and the step-up of HC contributed by the magnetic polarization of Pt atoms at the interface of Co and Pt layers during magnetization reversal. The results show that the change of the coercivity is strongly related to the Co layer thickness, but not the total thickness of Co layers. The dependence of the coercivity on the angle between an applied field and the easy axis shows that the nucleation mode is dominant in magnetization reversal process of the samples.     

Co/C与Co-Pt/C膜的微结构研究

利用磁控溅射方法制备Co/C和Co-Pt/C薄膜.用X射线衍射谱(XRD)和透射电子显微镜(TEM)测量样品结构和微观形貌.对Co/C和Co-Pt/C晶粒的大小进行计算,表明Co/C颗粒膜Co是以团簇的形式镶嵌在C层中的,面心立方(fcc)COPt3和面心四方(fct)Copt两个稳定有序相在Co-Pt/C薄膜中很好地...     

Ni-Fe-P/粉煤灰漂珠磁性复合材料的制备与表征

采用化学镀法在粉煤灰漂珠表面镀覆了Ni-Fe-P合金层,制备了Ni-Fe-P/漂珠磁性复合材料,并对其合成机理进行了分析.利用SEM,EDX,XRD及VSM对化学镀前后漂珠的表面形貌、成分、结构及磁性能进行了表征.结果表明:化学镀后漂珠表面包覆了均匀致密的Ni-Fe-P镀层;经不同温度热处理后,镀态镀层的非晶相结构转变...     

调制周期对TiN/Ti多层膜组织结构和结合力的影响

为了阐明调制周期对薄膜微观组织及薄膜与基体结合力的影响,采用反应磁控溅射在Ti6Al4V基板上交替沉积了Ti层及TiN层制备了TiN/Ti多层膜。利用X射线衍射仪(XRD)、扫描电子显微镜(SEM)、显微硬度仪和划痕仪测量分析了薄膜的晶体结构、微观组织、硬度以及薄膜与基体之间的结合力。研究结果表明:TiN/Ti多层膜中均存在TiN,Ti和Ti2N 3种相。TiN/Ti多层膜均以柱状晶方式生长,在调制周期较大(5层)时,TiN和Ti层的界面清晰;随着调制周期的减小(层数增加),TiN和Ti层的界面逐渐消失。与单层TiN薄膜相比,多层TiN/Ti薄膜的硬度显著提高;但随着薄膜层数的增加,多层TiN/Ti薄膜硬度略微降低。当调制周期为80nm(30层)时,薄膜与基体的结合力明显提高,达到73N。     

Fe/Ru界面对多层膜磁性的影响

采用高分辨透射电镜结合振动样品磁强计研究了Fe/Ru多层膜,对不同层厚的Fe/Ru多层膜的界面结构及其对磁性能的影响进行了分析。Fe层很薄时薄膜不连续,岛状分布的Fe颗粒使多层膜显示超顺磁特性。Fe/Ru界面的高分辨电镜观察发现,界面存在粗糙度的不对称性,它是多层膜中产生正磁阻的重要原因。Fe/Ru多层膜的负磁阻在退火后得到较大的提高,表明Fe/Ru多层膜的负磁阻主要来源于界面的粗糙度。     

Crystal structure and electrochemical behaviors of Pt/mischmetal film electrodes

The Ml(La-rich mischmetal0films with a thin Pt layer on the substrate of chemically coarse ITO glass or silicon slices were prepared by magnetic sputtering tchnique.The crystal structure and surface morphology of the films were investigated by X-ray diffraction(XRD)analysis and atomic force microscopy(AFM),respectively, The electrochemical hydridation/dehydridation behaviors of the films in KOH solution were studied by using cyclic voltammagraph and electrochemical impedance spectrum(EIS)as well.The AFM results show that the Pt cover layer on the M1 films is of island structure with a grain of 150-200nm in size.The presence of a thin Pt layer can provide sufficient high electrocatalytic activity for the electrochemical charge-transfer reaction.The electrochemical reduction and oxidation reaction occur on the Pt layer,and the diffusion of H into the Ml film is the rate-controlled step.The Pt coatings also act as protective layers,preventing oxidation and/or poisoning of the underlying Ml films in air.