MEMS Vertical Probe Cards With Ultra Densely Arrayed Metal Probes for Wafer-Level IC Testing

We have developed a MEMS probe-card technology for wafer-level testing ICs with 1-D line-arrayed or 2-D area-arrayed dense pads layouts. With a novel metal MEMS fabrication technique, an area-arrayed tip matrix is realized with an ultradense tip pitch of $90 muhbox{m} times 196 mu hbox{m}$ for testing 2-D pad layout, and a 50-$muhbox{m}$ minimum pitch is also achieved in line-arrayed probe cards for testing line-on-center or line-on-perimeter wafers. By using the anisotropic etching properties of single-crystalline silicon, novel oblique concave cavities are formed as electroplating moulds for the area-arrayed microprobes. With the micromachined cavity moulds, the probes are firstly electroplated in a silicon wafer and further flip-chip packaged onto a low-temperature cofired ceramic board for signal feeding to an automatic testing equipment. The microprobes can be efficiently released using a silicon-loss technique with a lateral underneath etching. The measured material properties of the electroplated nickel and the Sn–Ag solder bump are promising for IC testing applications. Mechanical tests have verified that the microprobes can withstand a 65-mN probing force, while the tip displacement is 25 $muhbox{m}$, and can reliably work for more than 100 000 touchdowns. The electric test shows that the probe array can provide a low contact resistance of below 1 $Omega$, while the current leakage is only 150 pA at 3.3 V for adjacent probes.$hfill$[2008-0273]      

Cryogenic Etching of Silicon: An Alternative Method for Fabrication of Vertical Microcantilever Master Molds

This paper examines the use of deep reactive ion etching of silicon with fluorine high-density plasmas at cryogenic temperatures to produce silicon master molds for vertical microcantilever arrays used for controlling substrate stiffness for culturing living cells. The resultant profiles achieved depend on the rate of deposition and etching of an $hbox{SiO}_{x}hbox{F}_{y}$ polymer, which serves as a passivation layer on the sidewalls of the etched structures in relation to areas that have not been passivated with the polymer. We look at how optimal tuning of two parameters, the $ hbox{O}_{2}$ flow rate and the capacitively coupled plasma power, determine the etch profile. All other pertinent parameters are kept constant. We examine the etch profiles produced using electron-beam resist as the main etch mask, with holes having diameters of 750 nm, 1 $muhbox{m}$ , and 2 $muhbox{m}$. $hfill$[2008-0317]      

How to Make $T$-Transitive a Proximity Relation

Three ways to approximate a proximity relation $R$ (i.e., a reflexive and symmetric fuzzy relation) by a $T$ -transitive one where $T$ is a continuous Archimedean $t$-norm are given. The first one aggregates the transitive closure $overline{R}$ of $R$ with a (maximal) $T$-transitive relation $B$ contained in $R$ . The second one computes the closest homotecy of $overline{R}$ or $B$ to better fit their entries with the ones of $R$. The third method uses nonlinear programming techniques to obtain the best approximation with respect to the Euclidean distance for $T$ the $Lstrok$ukasiewicz or the product $t$-norm. The previous methods do not apply for the minimum $t$-norm. An algorithm to approximate a given proximity relation by a ${rm Min}$-transitive relation (a similarity) is given in the last section of the paper.      

On the NP-Hardness of Checking Matrix Polytope Stability and Continuous-Time Switching Stability

Motivated by questions in robust control and switched linear dynamical systems, we consider the problem checking whether all convex combinations of $k$ matrices in $R^{n times n}$ are stable. In particular, we are interested whether there exist algorithms which can solve this problem in time polynomial in $n$ and $k$. We show that if $k= lceil n^{d} rceil $ for any fixed real $d>0$, then the problem is NP-hard, meaning that no polynomial-time algorithm in $n$ exists provided that $P ne NP$, a widely believed conjecture in computer science. On the other hand, when $k$ is a constant independent of $n$ , then it is known that the problem may be solved in polynomial time in $n$. Using these results and the method of measurable switching rules, we prove our main statement: verifying the absolute asymptotic stability of a continuous-time switched linear system with more than $n^{d}$ matrices $A_{i} in R^{n times n}$ satisfying $0 succeq A_{i} + A_{i}^{T}$ is NP-hard.      

A Programmable Array for Contact-Free Manipulation of Floating Droplets on Featureless Substrates by the Modulation of Surface Tension

This paper presents a contactless droplet manipulation system that relies on thermally generated Marangoni flows. Programmable 2-D control of aqueous microdroplets suspended in an oil film on a plain featureless glass substrate is achieved using a 128-pixel heater array suspended 100–500 $mu hbox{m}$ above the oil layer. The heaters generate surface temperature perturbations $(≪ 25 ^{circ}hbox{C})$, resulting in local Marangoni flows that can move droplets in either a push or a pull mode. Programmed movement is achieved by the sequential activation of the heaters, with digital control circuitry and a graphical interface providing addressable control of each heater. Droplets with diameters of 300–1000 $muhbox{m}$ are manipulated and merged at speeds up to 140 $muhbox{m/s}$. Evaporation rates can be reduced by almost two orders of magnitude by using a two-layer-oil medium, and the choice of an optimum carrier fluid can achieve fluid velocities over 17 000 $mu hbox{m/s}$. The system provides a contactless platform for parallel droplet-based assays. As such, it circumvents the challenges of sample contamination and loss that occur when a droplet interacts with a solid surface.$hfill$[2008-0272]      

Tungsten-Based SOI Microhotplates for Smart Gas Sensors

This paper is concerned with the design, fabrication, and characterization of novel high-temperature silicon on insulator (SOI) microhotplates employing tungsten resistive heaters. Tungsten has a high operating temperature and good mechanical strength and is used as an interconnect in high temperature SOI-CMOS processes. These devices have been fabricated using a commercial SOI-CMOS process followed by a deep reactive ion etching (DRIE) back-etch step, offering low cost and circuit integration. In this paper, we report on the design of microhotplates with different diameters (560 and 300 $muhbox{m}$) together with 3-D electrothermal simulation in ANSYS, electrothermal characterization, and analytical analysis. Results show that these devices can operate at high temperatures (600 $^{circ}hbox{C}$ ) well beyond the typical junction temperatures of high temperature SOI ICs (225 $^{circ}hbox{C}$), have ultralow dc power consumption (12 mW at 600 $^{circ}hbox{C}$), fast transient time (as low as 2-ms rise time to 600 $^{circ}hbox{C}$), good thermal stability, and, more importantly, a high reproducibility both within a wafer and from wafer to wafer. We also report initial tests on the long-term stability of the tungsten heaters. We believe that this type of SOI microhotplate could be exploited commercially in fully integrated microcalorimetric or resistive gas sensors. $hfill$[2007-0275]      

Analytical Model of Valveless Micropumps

The flow driven by a valveless micropump with a single cylindrical pump chamber and two diffuser/nozzle elements is studied theoretically using a 1-D model. The pump cavity is driven at an angular frequency $omega$ so that its volume oscillates with an amplitude $V_{rm m}$. The presence of diffuser/nozzle elements with pressure-drop coefficients $zeta_{+}$, $zeta_{-}( ≫ zeta_{+})$ and throat cross-sectional area $A_{1}$ creates a rectified mean flow. In the absence of frictional forces the maximum mean volume flux (with zero pressure head) is $Q_{0}$ where $Q_{0}/V_{rm m}omega = (zeta_{-} -break zeta_{+})pi/16(zeta_{-}+zeta_{+})$, while the maximum pressure that can be overcome is $Delta P_{max}$ where $ Delta P_{max}A_{1}^{2}/V_{rm m}^{2} omega^{2} !=! (zeta_{-} -break zeta_{+})/16$. These analytical results agree with numerical calculations for the coupled system of equations and compare well with the experimental results of Stemme and Stemme.$hfill$ [2008-0244]      

Real-Time Temperature Compensation of MEMS Oscillators Using an Integrated Micro-Oven and a Phase-Locked Loop

We present a new temperature compensation system for microresonator-based frequency references. It consists of a phase-locked loop (PLL) whose inputs are derived from two microresonators with different temperature coefficients of frequency. The resonators are suspended within an encapsulated cavity and are heated to a constant temperature by the PLL controller, thereby achieving active temperature compensation. We show repeated real-time measurements of three 1.2-MHz prototypes that achieve a frequency stability of $pm$ 1 ppm from $-20 ^{circ}hbox{C}$ to $+80 ^{circ}hbox{C}$, as well as a technique to reduce steady-state frequency errors to $pm$0.05 ppm using multipoint calibration.$hfill$[2009-0074]      

Evanescent-Wave Spectroscopy Using an SU-8 Waveguide for Rapid Quantitative Detection of Biomolecules

A 30-mm-long multimode waveguide, 40 $muhbox{m}$ wide and 40 $muhbox{m}$ high, is fabricated on a silicon wafer using polymer SU-8 as the core and liquid buffer as the cladding. Antibodies are successfully immobilized on the SU-8 surface designated for binding target antigens dispersed in the buffer solution. Evanescent-wave spectroscopy is performed by exciting the fluorescently labeled antigens, bound to the waveguide surface within its evanescence field, and measuring the emission light intensity. This evanescent-wave biosensor detects specific molecular interaction. The optical output as a function of the antigen concentration can be described by Langmuir equation. Antigen concentration as low as 1.5 $muhbox{g}/hbox{mL}$ is detected; concentrations higher than 100 $muhbox{g}/hbox{mL}$ lead to sensor saturation. $hfill$[2008-0058]      

Discharge-Based Pressure Sensors for High-Temperature Applications Using Three-Dimensional and Planar Microstructures

Two versions of microdischarge-based pressure sensors, which operate by measuring the change, with pressure, in the spatial current distribution of pulsed dc microdischarges, are reported. The inherently high temperatures of the ions and electrons in the microdischarges make these devices amenable to high-temperature operation. The first sensor type uses 3-D arrays of horizontal bulk metal electrodes embedded in quartz substrates with electrode diameters of 1–2 mm and 50–100-$muhbox{m}$ interelectrode spacing. These devices were operated in nitrogen over a range of 10–2000 torr, at temperatures as high as 1000 $^{circ}hbox{C}$. The maximum measured sensitivity was 5420 ppm/torr at the low end of the dynamic range and 500 ppm/torr at the high end, while the temperature coefficient of sensitivity ranged from $-$925 to $-$550 ppm/K. Sensors of the second type use planar electrodes and have active areas as small as 0.13 $hbox{mm}^{2}$. These devices, when tested in a chemical sensing system flowing helium as a carrier gas, had a maximum sensitivity of 9800 ppm/torr, a dynamic range of 25–200 torr, and a temperature coefficient of sensitivity of approximately $-$1412 ppm/K.$hfill$ [2008-0262]      

Reducing Anchor Loss in MEMS Resonators Using Mesa Isolation

In microelectromechanical systems resonators, dissipation of energy through anchor points into the substrate adds to resonator energy loss, contributing to low values of $Q$. A design for improving $Q$ based on the reflection of anchor-generated surface acoustic waves is presented here. In this design, the resonator is surrounded by a trench, or a mesa, that partially reflects the wave energy back to the resonator. Depending on the distance from the resonator to the mesa, the reflected wave interferes either constructively or destructively with the resonator, increasing or decreasing $Q$. The proposed design is experimentally tested using a dome-shaped flexural mode resonator for a range of distances of the mesa from the resonator. Improvements in $Q$ of up to 400% are observed. The resonator/mesa system is modeled using a commercially available finite-element code. Experiments and simulations compare well, suggesting that a finite-element-method analysis can be used in the preliminary design of mesas for the optimization of $Q$. The concept of using mesas to improve $Q$ is simulated for both flexural and in-plane modes of vibration.$hfill$[2008-0149]      

Controlled Thermophoresis as an Actuation Mechanism for Noncantilevered MEMS Devices

A microelectromechanical system actuator based on thermophoretic, or Knudson, forces is proposed using analytical calculations. It can potentially execute scanning or spinning motions of a body that is not mechanically attached to the reference substrate. For a silicon device of 100-$muhbox{m}$ diameter, it is calculated that it can be levitated at a distance of about 0.5 $muhbox{m}$ from a substrate and that it can execute scanning motion and use quasi-springs by laterally acting thermal forces. In this way, an engine with spinning motion of a floating body having a diameter of 200 $muhbox{m}$ with up to 5 kHz can be achieved.$hfill$[2008-0013]      

A Method for Wafer-Scale Encapsulation of Large Lateral Deflection MEMS Devices

Packaging of microelectromechanical systems (MEMS) is a critical step in the transition from development to commercialized product. This paper presents a thin-film encapsulation process that allows varying trench widths suitable for MEMS devices with lateral deflections as large as 20 $muhbox{m}$ . The process involves the deposition and planarization of a sacrificial-oxide layer of up to 23 $muhbox{m}$ thick, the deposition of a 20 $muhbox{m}$ epitaxial-silicon sealing cap, the release of structures using hydrofluoric acid (HF) vapor, and the sealing of the structure at low pressure. Devices produced using this encapsulation method are capable of surviving standard backend processes such as wafer singulation and wire bonding. Among the numerous types of devices encapsulated, two different types of silicon MEMS resonators were fabricated. These functioning resonators demonstrate the ability of the process to successfully encapsulate devices, taking advantage of both large and small trench widths. Such a generalized fabrication platform greatly expands the possibilities of the wafer-scale encapsulation to numerous MEMS devices and retains the robustness necessary for backend processing.$hfill$[2009-0159]      

Post-CMOS-Compatible Aluminum Nitride Resonant MEMS Accelerometers

This paper describes the development of aluminum nitride (AlN) resonant accelerometers that can be integrated directly over foundry CMOS circuitry. Acceleration is measured by a change in resonant frequency of AlN double-ended tuning-fork (DETF) resonators. The DETF resonators and an attached proof mass are composed of a 1- $muhbox{m}$ -thick piezoelectric AlN layer. Utilizing piezoelectric coupling for the resonator drive and sense, DETFs at 890 kHz have been realized with quality factors $(Q)$ of 5090 and a maximum power handling of 1 $muhbox{W}$. The linear drive of the piezoelectric coupling reduces upconversion of $1/f$ amplifier noise into $1/f^{3}$ phase noise close to the oscillator carrier. This results in lower oscillator phase noise, $-$96 dBc/Hz at 100-Hz offset from the carrier, and improved sensor resolution when the DETF resonators are oscillated by the readout electronics. Attached to a 110-ng proof mass, the accelerometer microsystem has a measured sensitivity of 3.4 Hz/G and a resolution of 0.9 $hbox{mG}/surdhbox{Hz}$ from 10 to 200 Hz, where the accelerometer bandwidth is limited by the measurement setup. Theoretical calculations predict an upper limit on the accelerometer bandwidth of 1.4 kHz.$hfill$ [2008-0190]      

$ {cal L}_{2}$ Gain of Periodic Linear Switched Systems: Fast Switching Behavior

We investigate the $ {cal L}_{2}$ gain of periodic linear switched systems under fast switching. For systems that possess a suitable notion of a time-average system, we characterize the relationship between the ${cal L}_{2}$ gain of the switched system and the ${cal L}_{2}$ gain of its induced time-average system when the switching rate is sufficiently fast. We show that the switched system ${cal L}_{2}$ gain is in general different from the average system ${cal L}_{2}$ gain if the input or output coefficient matrix switches. If only the state coefficient matrix switches, the input-output energy gain for a fixed ${cal L}_{2}$ input signal is bounded by the ${cal L}_{2}$ gain of the average system as the switching rate grows large. Additionally, for a fixed ${cal L}_{2}$ input, the maximum pointwise in time difference between the switched and average system outputs approaches zero as the switching rate grows.      

Fatigue Life Prediction Criterion for Micro–Nanoscale Single-Crystal Silicon Structures

This paper describes fatigue damage evaluation for micro–nanoscale single-crystal silicon (SCS) structures toward the reliable design of microelectromechanical systems subjected to fluctuating stresses. The fatigue tests, by using atomic force microscope (AFM), nanoindentation tester, and specially developed uniaxial tensile tester, have been conducted under tensile and bending deformation modes for investigating the effects of specimen size, frequency, temperature, and deformation mode on the fatigue life of SCS specimens. Regardless of frequency and temperature, the fatigue life has correlated with specimen size. For example, nanoscale SCS specimens with 200 nm in width and 255 nm in thickness have showed a larger number of cycles to failure, by a factor of $10^{5}$, at the same stress level, as compared to microscale specimens with 48 $muhbox{m}$ in width and 19 $muhbox{m}$ in thickness. Deformation mode has also affected the lifetime; however, no frequency and temperature dependences have been observed unambiguously in the $S{-}N$ curves. The stress ratio parameter corresponding to the ratio of peak stress to average fracture strength has enabled us to estimate the lifetime for each deformation mode. To predict the fatigue life of SCS structures regardless of deformation mode and specimen size, we have proposed an empirical parameter that includes the resolved shear stress. The mechanism of fatigue failure of SCS structures is discussed from the viewpoint of dislocation slip, crack nucleation, growth, and failure through observations using AFM and scanning electron microscope.$hfillhbox{[2008-0072]}$      

Fuzzy Subsethood for Fuzzy Sets of Type-2 and Generalized Type- ${n}$

In this paper, we use Zadeh's extension principle to extend Kosko's definition of the fuzzy subsethood measure $S(G,H)$ to type-2 fuzzy sets defined on any set $X$ equipped with a measure. Subsethood is itself a fuzzy set that is a crisp interval when $G$ and $H$ are interval type-2 sets. We show how to compute this interval and then use the result to compute subsethood for general type-2 fuzzy sets. A definition of subsethood for arbitrary fuzzy sets of type- $n ≫ 2$ is then developed. This subsethood is a type-( $n-1$) fuzzy set, and we provide a procedure to compute subsethood of interval type-3 fuzzy sets.      

Serially Connected Weight-Balanced Digital Actuators for Wide-Range High-Precision Low-Voltage-Displacement Control

This paper presents the design, fabrication, and characterization of a new serial digital actuator, achieving an improvement in range-to-precision and range-to-voltage performance. We propose a weight-balanced design for the serial actuators with serpentine springs with a serial arrangement of unit digital actuators. We have measured the displacement range, precision, and drive voltage of unit and serial actuation at 1 Hz. The serial digital actuators produce a full-range displacement of $28.44 pm 0.02 muhbox{m}$ , accumulating unit displacements of $2.8 pm 0.5 muhbox{m}$ at an operating voltage of 4.47 $pm$ 0.07 V. In addition, the serial digital actuators that have a displacement precision of 37.94 $pm$ 6.26 nm do not accumulate the displacement errors of the unit actuators, i.e., 36.0 $pm$ 17.7 nm. We experimentally verify that the serial digital actuators achieve a range-to-squared-voltage ratio of 1.423 $muhbox{m/V}^{2}$ and a range-to-precision ratio of 749.6.$hfill$ [2009-0020]      

A Novel Micromachining Process Using DRIE, Thermal Oxidation, Electroplating, and Planarization to Create High Aspect Ratio Coplanar Waveguides

A micromachining process has been developed to create high aspect ratio coplanar waveguides (HARCs). The process creates tall Si mesas using deep reactive-ion etching and converts them into solid $hbox{SiO}_{2}$ mesas using thermal oxidation. Tall Au conductors are deposited using electroplating and planarized using lapping and chemical-mechanical planarization. The solid $hbox{SiO}_{2}$ mesas form the dielectric gap between the tall Au conductors, resulting in HARCs with a planar surface. The tall conductor sidewalls created from the high aspect ratio process reduce the transmission line resistance, which allows the lines to have lower loss at low impedances compared to conventional transmission lines. Transmission lines with characteristic impedances of 16–21 $Omega$ have been fabricated on high-resistivity Si. Transmission line characteristics were measured from 1 to 50 GHz and showed an attenuation of 1.0–1.4 dB/cm at 10 GHz. Measurements were compared to HFSS simulations and showed reasonable agreement over the frequency range. $hfill$[2009-0132]      

A Laterally Movable Gate Field Effect Transistor

A laterally movable gate field effect transistor (LMGFET) device that directly couples lateral mechanical gate motion to drain current of a FET is presented in this paper. Lateral motion of the FET gate results in a change in channel width, keeping the channel length and the gap between the gate and the oxide layer constant. This results in a change in channel current that, in principle, is linearly proportional to mechanical motion. The operating principle of an LMGFET, along with details of the fabrication process for a depletion-type LMGFET device, is described. Fabricated LMGFET shows an average drain current sensitivity to gate motion of $-5.8 muhbox{A}/muhbox{m}$ at $V_{rm DS} = 20 hbox{V}$ and $V_{rm GS} = 0 hbox{V}$ for 60-$muhbox{m}$ gate motion. A model for the fabricated LMGFET is developed based on electrical measurements. The device shows promise both as a sensor and as an actuator in MEMS and other related applications.$hfill$ [2008-0147]