地面光伏的发展

目前世界上能源消耗以化石燃料为主,化石燃料消耗所带来的能源供应危机以及环境污染,使人类社会可持续发展受到越来越重的压力。因此,新能源的推广应用已成为全球共识。太阳能地面光伏,这一重要的新能源方式,其技术及产业均取得了广泛的发展,未来有可能成为战略性能源之一。     

扬州成第6个国家级半导体照明产业化基地

扬州正式成为国家级半导体照明产业化基地。日前，科技部致函江苏省政府，正式认定“扬州国家半导体照明产业化基地”。继厦门、上海、大连、南昌、深圳等5个城市之后，扬州成为全国第6个国家级“光谷”，这对扬州加快半导体照明和太阳能光伏产业发展将产生重大推动作用。     

基于离子间能量传递的宽带光谱调制

太阳能是一种取之不尽的清洁能源,太阳光伏发电技术作为解决化石燃料枯竭和地球环境问题的绿色能源技术越来越受到重视。     

浅谈光伏发电技术与建筑建设

正太阳能是一种清洁、高效和永不衰竭的新能源。全球光伏发电已经超过40GW,欧洲光伏发电的增长已经超过了风电,光伏发电已经成为仅次于水电、风电的第三大可再生能源发展电源。而光伏发电具有安全可靠、无噪声、无污染、制约少、故障率低、维护简便等优点,更是未来可持续性发展的方向。美国为促进太阳能发电的快速发展,提出了"太阳能屋顶计划"。在未来十年里,全美新建1000万个屋顶太阳能系统,以及20万个太阳能热水供暖系统。中国太阳能资源非常丰富,理论储量达每年17000亿吨标准煤,太阳能资源开发利     

太阳能LED灯的结构、原理及应用

<正> 在能源日益短缺、环境污染和环境保护越来越倍受关注的情况下,充分开发利用太阳能已成为人们所关注的焦点之一。太阳能是一种非常重要的可再生能源,半导体照明和太阳能光伏发电的最大优点都是环保、节能、长寿命和安全。太阳能发电和半导体照明的结合或集成应用,完成光电到电光的转换是最佳的组合,具有较高的投资价值和发展潜力。     

太阳能发电技术的研究进展

太阳能被认为是人类在21世纪将取代传统化石能源的最佳选择之一,它是一种可以再生的绿色能源.基于近年来所阅读的文献资料,较为系统地介绍了太阳能发电技术(PV)发展的状况,包括太阳能电池及相关的光学技术;并简单介绍世界和我国太阳能产业发展状况和趋势.从国际上的技术进展看,今后10余年将是太阳能发电技术和产业大发展的时期.预计2020年前后,太阳能发电将在经济上胜过传统技术而成为电网的主力;在技术上,基于Ⅲ-Ⅴ族化合物半导体的多重结高效率太阳能电池,配合大聚焦比光学系统的聚焦型太阳能发电(CPV),是最有发展前途的方向之一.     

国内首颗8英寸区熔硅单晶问世

正中环半导体股份有限公司近日公布了三项新产品:国内首颗8英寸区熔硅单晶、直拉区熔高效太阳能电池用硅单晶和8英寸〈110〉晶向直拉硅单晶。据介绍,目前这三项新产品已相继从实验室走向应用阶段;公司还希望凭借直拉区熔技术进军高效太阳能电池应用领域,并实现产业化生产。中环股份以半导体硅单晶材料、单晶硅光伏产品和半导体器件为主营业     

光伏并网技术与市场——现状与发展

随着经济的发展,人口的增加,化石能源逐步消耗,能源危机问题日益严重。而太阳能以其储量丰富、可再生、无污染的特点得到了人们的关注,正逐步成为各国政府重点扶持和发展的对象。本文对并网光伏系统的应用和技术现状进行综述,从技术和市场两个不同的角度分析了光伏市场的发展瓶颈,并预测了未来光伏系统的发展趋势。     

双结光伏单元制造成功

RFMD（www.rfmd.com）公司近日宣布,他们已成功利用公司现有标准6英寸半导体设备生产出集成GaAs（砷化镓）和InGaP（磷化铟镓）的双结光伏单元（dual-junction PV cells）。双结光伏单元的成功研制保证了未来三结结构（triple-junction structures）的发展,其最终目的是开发一种商业上可行的和具有高量产能力的高性能复合半导体太阳能电池。     

太阳能光伏发电知识问答（一）

1、太阳能光伏发电的主要优点有哪些？ 太阳能光伏发电的基本原理是利用太阳电池（一种半导体二极管或类似器件）的光伏效应直接把太阳的辐射能转变为电能的一种发电方式,发电过程简单,没有机械转动部件,不消耗燃料,不排放包括温室气体的任何物质,无噪声、无污染;太阳能资源分布广泛且取之不尽、用之不竭：制造太阳电池的硅占地球元素成分的25．8％,是地球上第二大元素,储藏量巨大。因此,与化石能源、风能和生物质能等新型发电技术相比,光伏发电是一种最具可持续发展理想特征的可再生能源发电技术,其主要优点有如下几点：（1）太阳能资源取之不尽,用之不竭,照射到地球上的太阳能要比人类目前消耗的能量大6000倍。在地球上分布广泛,只有有光照的地方就可以使用光伏发电系统,不受地域、海拔等因素的限制;（2）太阳能资源随处可得,可就近供电,不必长距离输送,避免了长距离输电线路的损失;     

太阳能光伏供电在高速公路监控中的应用

随着能源危机意识的增强,发展太阳能已经是大势所趋。太阳能光伏供电监控系统是利用太阳能组件将太阳能光能直接转换为电能,由监控中心统一控制的直流电源系统,以其节能、运行可靠、维护少、寿命长,且电能益于输送、储存的优势,将广泛的应用于高速公路监控系统中,也是将来道路监控的发展方向。     

Effect of MoSe2 on the performance of CIGS solar cells

A CuIn1-xGaxSe2 (CIGS) thin film solar cell model with MoSe2 transition layer was established, using SCAPS-1D software. The influence of MoSe2 interface layer formed between absorption layer CIGS and the back contact Mo on the solar cell performance was investigated.By changing the doping concentration,thickness and bandgap of MoSe2 layer, it is found that the MoSe2 and the variation of parameters have a significant effect on the electrical characteristics and photovoltaic parameters of CIGS thin film solar cells. Based on the energy band, the interfaces of Mo/MoSe2 and MoSe2/CIGS are analyzed. It is considered that Mo/MoSe2 is a Schottky contact, MoSe2/CIGS is an ohmic contact. When suitable parameters of MoSe2 layer are formed into the interface, it will provide a new path for designing CIGS solar cells with thinner absorption layer.     

Controllable Formation of Ordered Vacancy Compound for High Efficiency Solution Processed Cu(In,Ga)Se2 Solar Cells

Solution processing of Cu(In,Ga)Se₂ (CIGS) absorber makes it cost-competitive in the photovoltaic market. It is reported that copper-poor ordered vacancy compound (OVC) is crucial for high performance CIGS solar cells. However, in solution process method, controllable formation of OVC is unavailable and limited research has been carried out. In this work, the controllable formation of the OVC phase on the CIGS surface is successful by controlling the selenization temperature and intentional variation of Cu/(In+Ga) stoichiometry in precursors for top layers and bulk layers deposition. The effects of OVC contents on the device performance are investigated. The CIGS thin film with OVC phase exhibits a lower valence band position. Meanwhile, the CIGS devices with optimized OVC content show decreased interface defects density and better carrier collection ability. The above advantages translate into a champion PCE of 16.39% for CIGS device with OVC phase, which is the champion performance among non-hydrazine solution-processed CIGS solar cells. The results demonstrate that the controllable formation of OVC phase approach should make a significant contribution to the efficiency promoting of solution processed CIGS solar cells.     

Interface Analysis of Cu(In,Ga)Se2 and ZnS Formed Using Sulfur Thermal Cracker

We analyzed the interface characteristics of Zn‐based thin‐film buffer layers formed by a sulfur thermal cracker on a Cu(In,Ga)Se₂ (CIGS) light‐absorber layer. The analyzed Zn‐based thin‐film buffer layers are processed by a proposed method comprising two processes — Zn‐sputtering and cracker‐sulfurization. The processed buffer layers are then suitable to be used in the fabrication of highly efficient CIGS solar cells. Among the various Zn‐based film thicknesses, an 8 nm–thick Zn‐based film shows the highest power conversion efficiency for a solar cell. The band alignment of the buffer/CIGS was investigated by measuring the band‐gap energies and valence band levels across the depth direction. The conduction band difference between the near surface and interface in the buffer layer enables an efficient electron transport across the junction. We found the origin of the energy band structure by observing the chemical states. The fabricated buffer/CIGS layers have a structurally and chemically distinct interface with little elemental inter‐diffusion.     

Effects of Sb-doping on the grain growth of CIGS thin films fabricated by electrodeposition

Cu(In Ga)Se2(CIGS) solar cells become one of the most important thin film photovoltaic devices thus far. The doping of Sb has improved the grain size of CIGS thin film and therefore led to the enhancement of solar cell efficiency. Various approaches have been used for the Sb doping. Not many reports of electrodeposition of In, Ga and Sb alloy have been reported. In this work, the Sb thin film was coated over Cu film surface prior to the In and Ga deposition in order to form a Cu/Sb/In/Ga metal p...     

Contribution of Nanostructures in High Performance Solar Cells

Nanotechnology has great contributions in various fields, especially in solar energy conversion through solar cells (SCs). Nanostructured SCs can provide high performance with lower fabrication costs. The transition from fossil fuel energy to renewable sustainable energy represents a major technological challenge for the world. In the last years, the industry of SCs has grown rapidly due to strong attention in renewable energy in order to handle the problem of global climate change that is now believed to occur due to use of the fossil fuels. Cost is an influential factor in the eventual success of any solar technology, since inexpensive SCs are needed to produce electricity, especially for rural areas and for third world countries. Therefore, new developments in nanotechnology may open the door for the production of inexpensive and more efficient SCs by reducing the manufacturing costs of SCs. Utilizing nanotechnology in cheaper SCs will help maintain the environment. This article covers a review of the progress that has been made to-date to enhance efficiencies of various nanostructures used in SCs, including utilizations of all the wavelengths present in of the solar spectrum.     

钙钛矿太阳电池专利技术概述

钙钛矿太阳电池(Perovskite Solar Cells,PSCs)是由染料敏化太阳能电池演化出来的一种新型太阳能电池.其能够利用有机太阳能电池所采用的溶液法进行制备,极大降低了生产成本,有望成为新能源产业的一项重要技术.本文通过对检索到的国内外关于钙钛矿太阳电池的专利申请文件进行统计和梳理,对钙钛矿太阳电池领域的技术概况、专利申请态势以及专利技术发展趋势作了介绍,并分析了国内重点申请人的重点专利,为未来钙钛矿太阳电池领域的研究和改进提供参考.     

Influence of Ni and Cr impurities on the electronic properties of Cu(In,Ga)Se2 thin film solar cells

Deposition of Cu(In,Ga)Se₂ (CIGS) thin film solar cells on metallic substrate is an attractive approach for development of low cost solar modules. However, in such devices, special care has to be taken to avoid diffusion of impurities, such as Fe, Ni, and Cr, from the substrate into the active layers. In this work, the influence of Ni and Cr impurities on the electronic properties of CIGS thin film solar cells is investigated in detail. Impurities were introduced into the CIGS layer by diffusion during the CIGS deposition process from a Ni or Cr precursor layer below the Mo electrical back contact. A high temperature and a low temperature CIGS deposition process were applied in order to correlate the changes in the photovoltaic parameters with the amount of impurities diffused into the absorber layer. Solar cells with Ni and Cr impurities show a reduction in the device performance, whereas the effect was most pronounced in Ni containing devices. The presence of deep defect levels in the absorber layer was identified with admittance spectroscopy and can be related to Ni and Cr impurities, which diffused into the CIGS layer according to secondary ion mass spectroscopy depth profiles and inductively coupled plasma mass spectrometry. Copyright © 2014 John Wiley & Sons, Ltd.     

金属Cr阻挡层对柔性不锈钢衬底Cu(In,Ga)Se2太阳电池性能的影响

研究了Cr扩散阻挡层对柔性不锈钢衬底Cu(InxGa1-x)Se2(CIGS)太阳电池性能的影响.XRD和SEM分析表明,Cr阻挡层能够部分阻挡Fe等杂质从不锈钢衬底热扩散进入CIGS吸收层中,同时可以显著降低CIGS吸收层的粗糙度,提高薄膜结晶质量.从衬底扩散进入吸收层中的Fe元素以FeInSe2的形式存在,并形成FeCu等深能级缺陷,钝化了器件的性能.相同工艺条件下,在玻璃、不锈钢以及不锈钢/Cr阻挡层上所制备电池的(有效面积0.87cm2)转换效率分别为10.7%,7.95%和8.58%,不锈钢衬底电池效率的提高归因于Cr阻挡层的作用.     

A Novel Semiconductor CIGS Photovoltaic Material and Thin-Film ED Technology

In order to achieve low-cost high-efficiency thin-film solar cells, a novel Semiconductor Photovoltaic (PV) active material CuIn1-xGaxSe2 (CIGS) and thin-film Electro-Deposition (ED) technology is explored. Firstly,the PV materials and technologies is investigated, then the detailed experimental processes of CIGS/Mo/glass structure by using the novel ED technology and the results are reported. These results shows that high quality CIGS polycrystalline thin-films can be obtained by the ED method, in which the polycrystalline CIGS is definitely identified by the (112), (204, 220) characteristic peaks of the tetragonal structure, the continuous CIGS thin-film layers with particle average size of about 2μm of length and around 1.6μm of thickness. The thickness and solargrade quality of CIGS thin-films can be produced with good repeatability. Discussion and analysis on the ED technique, CIGS energy band and sodium (Na) impurity properties, were also performed. The alloy CIGS exhibits not only increasing band-gap with increasing x, but also a change in material properties that is relevant to the device operation. The beneficial impurity Na originating from the low-cost soda-lime glass substrate becomes one prerequisite for high quality CIGS films. These novel material and technology are very useful for low-cost high-efficiency thin-film solar cells and other devices.