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A 12.5 Gbps 1:16 demultiplexer (DEMUX) integrated circuit is presented for multi-channel high-speed data transmission. A novel high-speed synchronizing technique is proposed and integrated in this DEMUX chip. Compared with conventional synchronizing techniques, the proposed method largely simplifies the system configuration. The experimental result demonstrates that the proposed circuit is effective in two-channel synchronization under a clock frequency of 12.5 GHz. The circuit is realized using 1 μ m GaAs heterojunction bipolar transistor technology with die area of 2.3 × 2.3 mm2. 相似文献
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正An InGaAs/InP DHBT with an InGaAsP composite collector is designed and fabricated using triple mesa structural and planarization technology.All processes are on 3-inch wafers.The DHBT with an emitter area of 1 x 15μm~2 exhibits a current cutoff frequency f_t = 170 GHz and a maximum oscillation frequency f_(max) = 256 GHz.The breakdown voltage is 8.3 V,which is to our knowledge the highest BV_(CEO) ever reported for InGaAs/InP DHBTs in China with comparable high frequency performances.The high speed InGaAs/InP DHBTs with high breakdown voltage are promising for voltage-controlled oscillator and mixer applications at W band or even higher frequencies. 相似文献
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Ishii K. Nosaka H. Nakajima H. Kurishima K. Ida M. Watanabe N. Yamane Y. Sano E. Enoki T. 《Solid-State Circuits, IEEE Journal of》2002,37(9):1146-1151
Using InP-InGaAs heterojunction bipolar transistor (HBT) technology, we have successfully designed and fabricated a low-power 1:16 demultiplexer (DEMUX) integrated circuit (IC) and one-chip clock and data recovery (CDR) with a 1:4 DEMUX IC for 10-Gb/s optical communications systems. The InP-InGaAs HBTs were fabricated by a nonself-aligned process for high uniformity of device characteristics and producibility. The 1:16 DEMUX IC and the one-chip CDR with the 1:4 DEMUX IC consist of approximately 1200 and 460 transistors, respectively. We have confirmed error-free operation at 10 Gb/s for all data outputs of both ICs. The 1:16 DEMUX IC and the one-chip CDR with the 1:4 DEMUX IC consume only 1 W and 950 mW, respectively. These results demonstrate the feasibility of InP-InGaAs HBTs for low power high-integration optical communication ICs. 相似文献
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研制成功了一种无微空气桥的亚微米InP基异质结双极晶体管(HBT).发展了小于100nm的发射极侧向腐蚀工艺,实现了亚微米的InP基HBT.发射极宽度的减小有效提高了频率特性,发射极面积为0.8μm×15μm的HBT的电流增益截止频率达到了238GHz.发展了基极-集电极的侧向过腐蚀工艺,有效减小了结面积,提高了最大振荡频率.Kirk电流密度达到了3.1mA/μm2.据我们所知,电流增益截止频率是目前国内三端器件中最高的,Kirk电流密度是国内报道的HBT中最高的.这对于HBT器件在超高速电路中的应用具有十分重要的意义. 相似文献
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An InP/InGaAs single heterojunction bipolar transistor(SHBT) with high maximum oscillation frequency (f_(max)) and high cutoff frequency(f_t) is reported.Efforts have been made to maximize f_(max) and f_t simultaneously including optimizing the epitaxial structure,base-collector mesa over-etching and base surface preparation.The measured f_t and f_(max) both reached 185 GHz with an emitter size of 1×20μm~2,which is the highest f_(max) for SHBTs in mainland China.The device is suitable for ultra-high spee... 相似文献
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研制成功了一种无微空气桥的亚微米InP基异质结双极晶体管(HBT) . 发展了小于100nm的发射极侧向腐蚀工艺,实现了亚微米的InP基HBT. 发射极宽度的减小有效提高了频率特性,发射极面积为0.8μm×15μm的HBT的电流增益截止频率达到了238GHz. 发展了基极-集电极的侧向过腐蚀工艺,有效减小了结面积,提高了最大振荡频率. Kirk电流密度达到了3.1mA/μm2. 据我们所知,电流增益截止频率是目前国内三端器件中最高的,Kirk电流密度是国内报道的HBT中最高的. 这对于HBT器件在超高速电路中的应用具有十分重要的意义. 相似文献
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This paper describes a 12.5 Gbps voltage mode transmitter with a high speed signal conditioning capability. Using a linear equalizer that is followed by a power efficient output stage, the transmitter achieves pre-emphasis at very low power consumption. In measurements, the transmitter can reliably transmit a 12.5 Gbps PRBS7 signal through a lossy 14 in. FR4 stripline commonly used in backplanes. It achieves a peak to peak jitter of 24 ps, a differential eye opening amplitude of 120 mV, and a maximum common mode ripple of 40 mV. The proposed topology consumes 33 mW at-speed power which includes both the output stage and the linear equalizer. It also passes 8KV HBM ESD testing without compromising the high speed capability. The transmitter is fabricated in a 130 nm BiCMOS technology with 100 GHz maximum ft and packaged in a commercial leadless leadframe package. 相似文献
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An InP/InGaAs single heterojunction bipolar transistor (SHBT) with high maximum oscillation frequency (fmax) and high cutoff frequency (ft) is reported. Efforts have been made to maximize fmax and ft simultaneously including optimizing the epitaxial structure, base–collector mesa over-etching and base surface preparation. The measured ft and fmax both reached 185 GHz with an emitter size of 1 × 20 μ m2, which is the highest fmax for SHBTs in mainland China. The device is suitable for ultra-high speed digital circuits and low power analog applications. 相似文献
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为了改善传统F类射频功放LC输出匹配电路二阶阻抗不为零而造成的效率损害,提出了一种更加理想的新型LC输出匹配电路.根据双极型功放的特点,提出的新型LC输入匹配电路可以进一步提高输出效率.通过在Jazz SiGe BiCMOS 0.35μm工艺上的电路仿真设计表明,效率可以由63%增加到73%.工作在2.4GHz频段上的此F类功率放大器可以适用于采用非线性调制的射频发送端. 相似文献
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报道了一种采用U形发射极新结构的高性能InGaP/GaAs HBT.采用自对准发射极、LEU等先进工艺技术实现了特征频率达到108GHz,最大振荡频率达到140GHz的频率特性.这种新结构的HBT的击穿电压达到25V,有利于在大功率领域应用.而残余电压只有105mV,拐点电压只有0.50V,使其更适用于低功耗应用.同时,还对比了由于不同结构产生的器件性能的差异. 相似文献
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基于IBM0.35μm SiGe BiCMOS工艺BiCMOS5PAe实现了一种偏置电流可调节的高效率2.4GHz锗硅功率放大器。该功率放大器采用两级单端结构和一种新型偏置电路,除射频扼流电感外,其它元件均片内集成。采用的新型偏置电路用于调节功率放大器的静态偏置电流,使功率放大器工作在高功率模式状态或低功率模式状态。在3.5V电源条件下,功率放大器在低功率模式下工作时,与工作在高功率模式下相比,其功率附加效率在输出0dBm时提高了56.7%,在输出20dBm时提高了19.2%。芯片的尺寸为1.32mm×1.37mm。 相似文献
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We present a comparison of material quality and device performance of metamorphic InGaAs/InP heterojunction bipolar transistors
(HBTs) grown by molecular beam epitaxy (MBE) on GaAs substrates with two different types of buffer layers (direct InP and
graded InAlP buffers). The results show that the active layer of InP-MHBT has more than one order of magnitude more defects
than that of the InAlP-MHBT. The InAlP-MHBTs show excellent direct current (DC) performance. Low DC current gain and a high
base junction ideality factor from the InP-MHBT are possibly due to a large number of electrically active dislocations in
the HBT active layers, which is consistent with a large number of defects observed by cross-sectional transmission electron
microscopy (TEM) and rough surface morphology observed by atomic force microscopy (AFM). 相似文献
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This paper presents the results of a simulation study focused on the evaluation of the DC characteristics of an n-p-n SiGe-based heterojunction bipolar transistor (HBT) performing an extremely thin n+ hydrogenated amorphous silicon (a-Si:H) emitter. The a-Si:H(n)/SiGe(p) structure exhibits an energy gap difference of approximately 0.8 eV mostly located at the valence band side and this results in an optimal configuration for the emitter/base junction to improve the emitter injection efficiency and thus the device performance.Considering a 20% Ge uniform concentration profile in the base region, simulations indicate that the DC characteristics of an a-Si:H/SiGe HBT are strictly dependent on two essential geometrical parameters, namely the emitter width and the base width. In particular, the emitter thickness degrades device characteristics in terms of current handling capabilities whereas higher current gains are obtained for progressively thinner base regions. A DC current gain exceeding 9000 can be predicted for an optimized device with a thin emitter and a 10 nm-thick, doped base. 相似文献
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提出了一种新型的双发射短接的阳极短路IGBT结构,该结构有两个空穴放射区和二氧化硅阻挡层。首先,第二发射区可以增加空穴的发射效率同时阻止电子直接流向金属,增加了阳极上的电阻和电压,有效的抑制了负阻效应;另一方面,二氧化硅阻挡层使得大量电子聚集在阳极区附近,进一步降低了导通压降。结果表明:相对于传统NPT IGBT, NPN-IGBT和阳极短路IGBT,导通压降分别降低了10%, 17%, 30%。另外,这种阳极短路结构由于有一个电子通道,在关断过程中可以像阳极短路结构一样抽取过剩载流子,使得其关断时间很短,在同样的导通压降下关断,相对于传统NPT IGBT,NPN-IGBT和阳极短路IGBT,关断损耗分别降低了43.7%, 32%, 28%。这种新结构最终实现了导通压降和关断损耗之间很好的折中。 相似文献
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H. K. Yow P. A. Houston C. C. Button J. P. R. David C. M. S. Ng 《Journal of Electronic Materials》1998,27(1):18-24
GaInP/GaAs and AlInP/GaAs heterojunction bipolar transistor (HBT) structures were grown by low pressure metalorganic vapor
phase epitaxy and annealed at various temperatures up to 675°C for 15 min. Subsequent comparisons with HBTs fabricated on
both annealed and unannealed control samples showed no effects for annealing up to and including 575°C, but significant changes
in the electrical characteristics were observed at an annealing temperature of 675°C. For the GaInP/GaAs devices, the base
current increased by a significant amount, reducing the gain and increasing the base current ideality factor from 1.07 to
1.9. Photoluminescence and electrical measurements on the structures indicated that both the emitter and base were affected
by an increase in the recombination times in those regions. These effects were attributed to an out-diffusion of hydrogen
from the base during annealing. The emitter of the AlInP/GaAs HBT was affected less by the hydrogen diffusion because of the
larger bandgap. These observations have important implications for device performance dependence on the details of the temperature/time
profile subsequent to the base growth. 相似文献