共查询到19条相似文献,搜索用时 156 毫秒
1.
发展硅基光电子学一直是人们关注追求着的一个诱人的目标,众所周知,半导体晶体管是构成微电子技术的关键基础,而发光,激光器件则将是光电子学的心脏部件,硅属间接带隙材料,发光效率至少比直接带隙的GaAs低三个量级。探索硅基材料高效率发光的途径,已是当前科技界研究的热点,能带工程的应用为之展现出光明的前景。本文着重评述,由SiGe量子阱能带工程,Er ̄(3+)发光中心离子注入掺杂工程,以及直接带隙β一FeSi_2新材料工程的研究所取得的进展,并提出作者的若干初步想法的考虑。 相似文献
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发光器件和集成电路都是信息技术的基础。如果能将它们集成在一个芯片上,信息传输速度,储存和处理能力将得到大大提高,它将使信息技术发展到一个全新的阶段,但是,现在的集成电路是采用硅材料,而发光器件则用ill-V族化合物半导体。Ill-V族化合物半导体集成电路,虽然经过多年的研制,但至今还不成熟。因此,研究硅基发光材料和器件成为发展光电子集成的关键。本文评述了目前取得较大进展的几种主要硅基发光材料和器件的研究,包括掺铒硅、多孔硅、纳米硅以及 Si/SiO_2等超晶格结构材料,并展望了这些不同硅基发光材料和发光器件在光电集成中的发展前景。 相似文献
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Si基纳米结构的电子性质 总被引:1,自引:0,他引:1
各种Si基纳米发光材料在Si基光电子器件及其全Si光电子集成技术中具有潜在的应用前景,从理论和实验上对其电子结构进行研究,有助于我们深化对其发光机制的认识与理解。本文主要从量子限制效应发光这一角度,着重介绍了Si纳米晶粒、Ge/Si量子点,SiO2/Si超晶格和超小尺寸Si纳米团簇等不同Si基纳米结构的电子性质以及它们与发光特性之间的关系。还讨论了介质镶嵌和表面钝化对其电子结构的影响。 相似文献
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Si基光电子学研究进展 总被引:6,自引:1,他引:6
作为“第二代硅”Si基异质结材料为世人所瞩目,Si基光电子器件及光电集成(OEIC)是当前世界范围的热门课题,本文综述Si基异质材料的外延生长和特性,Si基光电子器件的结构和性能及其应用,着重介绍SiGe/Si的研究进展。 相似文献
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本文采用集团模型和推广的Hucket分子轨道理论(EHMO)计算c-si中Er点缺陷及Er-O 合缺陷的原子构型及电子结构。计算结果符合实验及一些文献的第一性原理计算结果,解释了Er有c-Si中的发光特性。 相似文献
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回顾了Si基发光的研究历程,归纳分析了新近几种实现Si发光的方法和其优缺点,其中包括多孔Si发光、GeSi/Si量子阱发光、Sip-n结位错发光、CMOSSi基发光、PERL结构Si基发光等方法。重点介绍了PERL结构Si基发光,分析了结构设计中的几个关键性因素。该结构利用了光电转换可逆性原理,基于普通的单光子和双光子辅助次禁带弱光发射过程,通过把位于有关的次禁带波长的吸收最小化,同时减少二极管内寄生无辐射复合的作用范围。期望通过该综述提高国内研究者对PERLSi基发光的重视,开拓以PERL为新思路、新方法的Si基光互连方向研究的新进展。 相似文献
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Si-based germanium is considered to be a promising platform for the integration of electronic and photonic devices due to its high carrier mobility, good optical properties, and compatibility with Si CMOS technology. However, some great challenges have to be confronted, such as: (1) the nature of indirect band gap of Ge; (2) the epitaxy of dislocation-free Ge layers on Si substrate; and (3) the immature technology for Ge devices. The aim of this paper is to give a review of the recent progress made in the field of epitaxy and optical properties of Ge heterostructures on Si substrate, as well as some key technologies on Ge devices. High crystal quality Ge epilayers, as well as Ge/SiGe multiple quantum wells with high Ge content, were successfully grown on Si substrate with a low-temperature Ge buffer layer. A local Ge condensation technique was proposed to prepare germanium-on-insulator (GOI) materials with high tensile strain for enhanced Ge direct band photoluminescence. The advances in formation of Ge n+p shallow junctions and the modulation of Schottky barrier height of metal/Ge contacts were a significant progress in Ge technology. Finally, the progress of Si-based Ge light emitters, photodetectors, and MOSFETs was briefly introduced. These results show that Si-based Ge heterostructure materials are promising for use in the next-generation of integrated circuits and optoelectronic circuits. 相似文献
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Fereydoon Namavar Feng Lu Clive H. Perry Annmarie Cremins Nader Kalkhoran Richard A. Soref 《Journal of Electronic Materials》1996,25(1):43-49
This paper explores the challenges faced in developing efficient room temperature porous Si-based light emitting diodes. We
experimentally demonstrate that porous Si is an excellent host material for erbium ions to emit strong, room temperature,
sharp-line luminescence at 1.54 μm. A comparison of photoluminescence data for erbium implanted samples of bulk Si, porous
Si, and quartz indicate that quantum confinement likely enhances the erbium IR luminescence efficiency. Due to the 650 to
850°C annealing, it is unlikely that the environment of erbium in our samples is amorphous Si. 相似文献
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光子晶体是近十年来迅速发展起来的一种新型人工结构的功能材料。本文简要介绍了Si基光子晶体的主要特点;着重介绍了Si基光子晶体的几种主要制备方法,如精细干式蚀刻法、胶质晶体模板法、宏观多孔Si的电化学腐蚀、多光子聚合法和核壳结构纳米晶粒镶嵌法等;概要介绍了Si基光子晶体在Si基发光器件和Si基光波导器件中的应用。对目前存在的问题进行了讨论,并展望了它的未来发展趋势。 相似文献
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In this paper, we will present our recent research on the growth and characterization of some Si-based heterostructures for
optical and photonic devices. The heterostructures to be discussed are ZnO nanorods on Si, SiO2, and other substrates such as SiN and sapphire. We will also consider strained Si1−xGex/Si heterostructures for Si optoelectronics. The performance and functionality extension of Si technology for photonic applications
due to the development of such heterostructures will be presented. We will focus on the results of structural and optical
characterization in relation to device properties. The structural characterization includes x-ray diffraction for assessment
of the crystallinity and stress in the films and secondary ion mass spectrometry for chemical analysis. The optical properties
and electronic structure were investigated by using photoluminescence. The device application of these thin film structures
includes detectors, lasers, and light emitting devices. Some of the Si-based heterostructures to be presented include devices
emitting and detecting up to the blue-green and violet wave lengths. 相似文献
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硅基量子点的制备及其发光特性 总被引:1,自引:0,他引:1
硅基光电子学无疑是今后光电子学发展的方向,这就要求硅基材料能够满足发光器件的要求,从而达到光电集成的目的。因为硅体具有非直接带隙的特点,共发光效率低,所以利用硅基低维量子结构,尤其是量子点结构提高硅基材料的发光性能一直是国内外本领域的一个研究特点。本文对近年来硅基量子点的制备及发光特性研究所取得的进展和结果进行了总结和评述,并对今后的发展提出了看法。 相似文献
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PENGYing-cai FUGuang-sheng WANGYing-long SHANGYong 《半导体光子学与技术》2004,10(3):158-163
Si-based optoelectronics is becoming a very active research area due to its potential applications to optical communications. One of the major goals of this study is to realize all-Si optoelectronic integrated circuit. This is due to the fact that Si- based optoelectronic technology can be compatible with Si microelectronic technology. If Si - based optoelectronic devices and integrated circuits can be achieved, it will lead to a new irtformational technological revolution. In the article, the current developments of this exciting field are mainly reviewed in the recent years. The involved contents are the realization of various Si- based optoelectronic devices, such as light- emitting diodes, optical waveguides devices, Si photonic bandgap crystals, and Si laser,etc. Finally, the developed tendency of all-Si optoelectronic integrated technology are predicted in the near future. 相似文献
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D. Y. C. Lie 《Journal of Electronic Materials》1998,27(5):377-401
The question of whether one can effectively dope or process epitaxial Si(100)/GeSi heterostructures by ion implantation for
the fabrication of Si-based heterojunction devices is experimentally investigated. Results that cover several differention
species (B, C, Si, P, Ge, As, BF2, and Sb), doses (1013 to 1016/cm2), implantation temperatures (room temperature to 150°C), as well as annealing techniques (steady-state and rapid thermal
annealing) are included in this minireview, and the data are compared with those available in the literature whenever possible.
Implantation-induced damage and strain and their annealing behavior for both strained and relaxed GeSi are measured and contrasted
with those in Si and Ge. The damage and strain generated in pseudomorphic GeSi by room-temperature implantation are considerably
higher than the values interpolated from those of Si and Ge. Implantation at slightly elevated substrate temperatures (e.g.,
100°C) can very effectively suppress the implantation-induced damage and strain in GeSi. The fractions of electrically active
dopants in both Si and GeSi are measured and compared for several doses and under various annealing conditions. Solid-phase
epitaxial regrowth of GeSi amorphized by implantation has also been studied and compared with regrowth in Si and Ge. For the
case of metastable epi-GeSi amorphized by implantation, the pseudomorphic strain in the regrown GeSi is always lost and the
layer contains a high density of defects, which is very different from the clean regrowth of Si(100). Solid-phase epitaxy,
however, facilitates the activation of dopants in both GeSi and Si, irrespective of the annealing techniques used. For metastable
GeSi films that are not amorphized by implantation, rapid thermal annealing is shown to outperform steady-state annealing
for the preservation of pseudomorphic strain and the activation of dopants. In general, defects generated by ion implantation
can enhance the strain relaxation process of strained GeSi during post-implantation annealing. The processing window that
is optimized for ion-implanted Si, therefore, has to be modified considerably for ion-implanted GeSi. However, with these
modifications, the mature ion implantation technology can be used to effectively dope and process Si/GeSi heterostructures
for device applications. Possible impacts of implantation-induced damage on the reliability of Si/GeSi heterojunction devices
are briefly discussed. 相似文献
19.
The success of heterojunction quantum wells and quantum dots in III–Vs has not been extended to silicon because the ideal barrier, SiO2, is amorphous, preventing the formation of quantum structures with silicon. The possibility of a few monolayers of oxide inserted between adjacent silicon layers was proposed and realized with a superlattice (SL) structure consisting of Si–Si–O–Si–Si–Si, having a monolayer of oxygen in each period introduced by adsorption onto the 2×1 reconstructed surface along the Si(1 0 0). Reduction of the period leads to a slight up-shift of the energy of the emitted light, indicating that the essential objective of boosting the optical transition by promoting direct transitions has not been realized. Annealing in H2+O2 results in significant improvement in PL and EL, showing that specific defects, e.g., Si–O complexes may be responsible for the observed light emission. The role of Si–O complex being the origin of emission is further supported by the observation that the emission of visible light from polycrystalline Si and SiO2 structure is similar to the epitaxial superlattice with oxygen. The computed strain in a new type of superlattices consisting of SiO2, and GeO2 is much lower than the Si–O SL. The EL in Si–O superlattice with the use of a Schottky barrier to provide electron–hole accumulation allows double injection into states higher in energy than the bandgap of Si, a prerequisite for injection laser without the need to use a wide-band pn-junction. 相似文献