硅基发光材料研究进展

硅是一种非发光材料,发展光电子集成技术必须大力发展硅基发光材料,在此基础上,研究了各类与硅平面技术兼容的发光器件和集成电路。文章综述各类硅基发光材料、发光机制的研究成果与发展动态。     

LPPP异质结构薄膜发光器性能增强的研究

研究了以空穴型梯型聚次苯基（LPPP）和电子型八羟基喹啉铝（Alq3）组成的光发射器发射效率提高的方法,发光器的结构为Au／LPPP／Alq3／Al,测试结果表明这种发光器微腔调谐效应显著,净发射效率得到提高。     

Si基纳米结构的电子性质

各种Si基纳米发光材料在Si基光电子器件及其全Si光电子集成技术中具有潜在的应用前景,从理论和实验上对其电子结构进行研究,有助于我们深化对其发光机制的认识与理解。本文主要从量子限制效应发光这一角度,着重介绍了Si纳米晶粒、Ge/Si量子点,SiO2/Si超晶格和超小尺寸Si纳米团簇等不同Si基纳米结构的电子性质以及它们与发光特性之间的关系。还讨论了介质镶嵌和表面钝化对其电子结构的影响。     

SiGe／Si异质结器件

本文综述了国际上ＳｉＧｅ／Ｓｉ异质结器件的发展状况，分析了该器件的结构要理，特点，优越性及制造技术，阐述了该器件的广阔应用和对微电子将产的重大影响。     

Si基有机异质结势垒特性的研究

在电阻率为０．２Ω．ｃｍ的ｐ－Ｓｉ衬底上沉积了厚度为２０ｎｍ的有机半导体材料四甲酸二酐（ＰＴＣＤＡ）薄膜,由此形成有机／无机异质结。从它们的能带结构出发,通过实验测试分析了这种有机／无机半导体异质结（ＯＩＨＪ）的电容－电压及电流－电压特性。     

Si基光电子学的研究与展望

Si基光电子学是为顺应二十一世纪以现代光通信和光电子计算机为主的信息科学技术发展需要,在全世界范围内迅速兴起的一个极为活跃的研究前沿。其最终目标之一是为了实现人们所期盼的全Si光电子集成电路．本文尝试性地评论了这一集Si材料技术、纳米技术、微电子技术以及光电子技术为一体的新型交叉学科,近年来在直接带隙Si基低维材料的设计、晶粒有序Si基纳米材料的制备与稳定高效Si基发光器件的探索等方面所取得的若干重要研究进展,并预测了全Si光电子集成技术的未来发展趋势。     

硅基发光材料和器件研究的进展

发光器件和集成电路都是信息技术的基础,如果将经们集成在一个芯片上,信息传输速度,存储和处理能力将得到大大提高,它将使信息技术发展到一个全新的阶段,但是,现有的集成电路是采用硅材料,而发光器件用Ⅲ－Ⅴ族化合物半导体。Ⅲ－Ⅴ族化合物半导体集成电路,虽然经过多年的研制,但至今还不成熟,因此,研究硅基发光材料和器件成为发展光电子集成的关键。本文评述了目前取得较大进展的几种主要硅基发光材料和器件成为发展光电     

硅基发光材料研究进展

阐述了等电子杂质、掺Er硅、硅基量子结构(包括量子阱、量子线和量子点)及多孔硅的发光机理,综述了90年代以来a-Si/SiO2、SiGe/Si等Si基异质结构材料的优异特性和诱人的应用前景,着重介绍了能带工程为Si基异质结构带来的新特性、新功能,重点介绍了硅基量子点的制备和发光机理,综述了半导体量子点材料的最新发展动态和发展趋势。     

基于标准CMOS工艺的Si基光发射器件

基于反偏雪崩击穿的发光原理,按照Chartered 0.35μm标准CMOS工艺要求,设计并制作了一种Si基光发射器件。在室温下对器件特性进行了初步测试,正向导通电压为0.75V,反向击穿电压为8.4V,能够在一个较宽的电压范围(8.4～12V)内稳定工作。总结了工艺对器件电学特性的影响,并将该器件结构与Snyman等人研究的器件结构进行了比较分析。该器件较强的边缘发光在平面结构的Si基片上集成光互联系统中将会有一定的应用价值。     

Doping and processing epitaxial GexSi1−x films on Si(100) by ion implantation for Si-based heterojunction devices applications

The question of whether one can effectively dope or process epitaxial Si(100)/GeSi heterostructures by ion implantation for the fabrication of Si-based heterojunction devices is experimentally investigated. Results that cover several differention species (B, C, Si, P, Ge, As, BF₂, and Sb), doses (10¹³ to 10¹⁶/cm²), implantation temperatures (room temperature to 150°C), as well as annealing techniques (steady-state and rapid thermal annealing) are included in this minireview, and the data are compared with those available in the literature whenever possible. Implantation-induced damage and strain and their annealing behavior for both strained and relaxed GeSi are measured and contrasted with those in Si and Ge. The damage and strain generated in pseudomorphic GeSi by room-temperature implantation are considerably higher than the values interpolated from those of Si and Ge. Implantation at slightly elevated substrate temperatures (e.g., 100°C) can very effectively suppress the implantation-induced damage and strain in GeSi. The fractions of electrically active dopants in both Si and GeSi are measured and compared for several doses and under various annealing conditions. Solid-phase epitaxial regrowth of GeSi amorphized by implantation has also been studied and compared with regrowth in Si and Ge. For the case of metastable epi-GeSi amorphized by implantation, the pseudomorphic strain in the regrown GeSi is always lost and the layer contains a high density of defects, which is very different from the clean regrowth of Si(100). Solid-phase epitaxy, however, facilitates the activation of dopants in both GeSi and Si, irrespective of the annealing techniques used. For metastable GeSi films that are not amorphized by implantation, rapid thermal annealing is shown to outperform steady-state annealing for the preservation of pseudomorphic strain and the activation of dopants. In general, defects generated by ion implantation can enhance the strain relaxation process of strained GeSi during post-implantation annealing. The processing window that is optimized for ion-implanted Si, therefore, has to be modified considerably for ion-implanted GeSi. However, with these modifications, the mature ion implantation technology can be used to effectively dope and process Si/GeSi heterostructures for device applications. Possible impacts of implantation-induced damage on the reliability of Si/GeSi heterojunction devices are briefly discussed.     

硅基近红外探测器研究进展

介绍了近年来在硅基近红外探测器方面所取得的最新进展,分析并讨论了各种吸收区材料以及器件结构,并对其发展与应用进行了展望.     

Progress of Si-based Optoelectronic Devices

Si-based optoelectronics is becoming a very active research area due to its potential applications to optical communications. One of the major goals of this study is to realize all-Si optoelectronic integrated circuit. This is due to the fact that Si- based optoelectronic technology can be compatible with Si microelectronic technology. If Si - based optoelectronic devices and integrated circuits can be achieved, it will lead to a new irtformational technological revolution. In the article, the current developments of this exciting field are mainly reviewed in the recent years. The involved contents are the realization of various Si- based optoelectronic devices, such as light- emitting diodes, optical waveguides devices, Si photonic bandgap crystals, and Si laser,etc. Finally, the developed tendency of all-Si optoelectronic integrated technology are predicted in the near future.     

Visible and infrared (1.54 μm) emission from Er-lmplanted porous Si for photonic applications

This paper explores the challenges faced in developing efficient room temperature porous Si-based light emitting diodes. We experimentally demonstrate that porous Si is an excellent host material for erbium ions to emit strong, room temperature, sharp-line luminescence at 1.54 μm. A comparison of photoluminescence data for erbium implanted samples of bulk Si, porous Si, and quartz indicate that quantum confinement likely enhances the erbium IR luminescence efficiency. Due to the 650 to 850°C annealing, it is unlikely that the environment of erbium in our samples is amorphous Si.     

硅基纳米材料制备技术的新进展

近年,硅基低维材料物理与工艺的研究预示,硅基光电子学将是今后半导体光电子学的一个主要发展方向,而对硅基纳米材料的研究一直是本领域的一个研究热点,评述了近年硅基纳米材料在制备技术方面所取得的新进展,并展望了今后的发展方向。     

增强型有机半导体微腔发光器的研究

本文主要研究了有机半导体微腔发光增强性质的问题,微腔的发光层由空穴转移型对次苯基聚合物和电子转移型的染料掺杂8羟基喹啉铝质结构组成,通过调节Al和ITO电极之间有机聚合物层厚度达到微腔效应。研究结果表明这种结构的微腔极大地增强了电致发光效率。     

载流子平衡的低压高效有机发光器件

分别在ITO与NPB间加入高迁移率的m-MTDATA:x%4F-TCNQ来增强器件的空穴注入,在阴极和发光层之间加入高迁移率的Bphen:Liq层增强器件的电子注入,制备了结构为ITO/m-MTDATA:x%4F-TCNQ/NPB/Alq_3/Bphen:Liq/LiF/Al的有机发光器件.研究了传输层的单载流子器件行为,同时,由于注入的电子和空穴数量偏离平衡,器件的整体效率也会受到影响,在实验中通过调节4F-TCNQ的质量百分比,来调控空穴的注入和传输,使载流子达到了较好的平衡.器件的最大电流效率和流明效率分别达到了6.1 cd/A和5.2 lm/W.