大功率LED结温测量及发光特性研究

介绍了基于正向电压法原理自行研制的大功率LED结温测试系统,结温定量测量精度可达±0.5 ℃.利用该系统对不同芯片结构与不同封装工艺的大功率LED热阻进行了测量比较,并对不同结温的大功率LED发光特性进行了研究.结果表明,不同结构芯片温度-电压系数K明显不同;采用热导率更高的粘结材料和共晶焊工艺固定LED芯片,会明显降低封装层次引入的热阻.结温对光辐射功率有直接影响,若保持结温恒定,光辐射功率随电流增大线性增加;若保持外部散热条件不变,热阻大的芯片内部热量积累较快,导致结温上升速度更快,光效随电流增加而下降的趋势也更为严重.     

PN型半导体电特性分析

基于PN结半导体的理论知识,详细的介绍了PN结半导体的工作原理,通过实验描绘出了PN结伏安特性曲线,并利用基本理论知识对大学实验中＂非线性电阻元件＂的伏安特性进行解释。     

试论大功率LED散热器性能的双目标优化

根据相关研究和分析来看,大功率LED散热器性能的双目标优化,主要采用的优化方法是:第一,正交试验设计法;第二,遗传算法,可以有效确定不同结构设置下的芯片结温、肋片重量,从而达到提高大功率LED散热器性能的目的.本文就大功率LED散热器性能进行概述,对大功率LED散热器性能的双目标优化进行探讨,以更好地满足大功率LED在各种应用中需求.     

基于平板热管的大功率LED散热系统模拟及优化

为解决大功率LED的散热问题,设计了平板热管散热器来实现LED芯片的高效散热。通过Flotherm模拟软件,对大功率LED在自然对流条件下的散热情况进行了三维数值模拟。通过平板热管与常规铜、铝散热基板对比,发现平板热管有效降低了大功率功率LED的结温和热阻,使得LED温度分布更为均匀。此外,还研究了平板热管LED散热系统在不同芯片功率下的热性能,并对四种不同排布方式的LED平板热管散热系统进行了优化,发现阵列分布其温度分布最为均匀,结温最低,是较优的排布方式。     

大功率LED的光衰机制研究

为了研究大功率LED的光衰机制,选用了一系列的大功率白光、蓝光发光二极管分别进行恒流点亮,在点亮不同时间阶段测量其光通量、发光谱及伏安特性.发现在光衰过程中,光通量有时会上升;通过LED光谱测定,发现光谱分布有明显变化;同时,pn结内阻也逐渐变大.研究表明大功率LED光衰有较为复杂的过程:其中荧光粉老化及pn结性能退化是最主要的.文章对此进行了初步的分析,为白光LED的应用及进一步研究白光LED衰减提供了参考.     

LED导热胶片性能研究与评估

大功率LED器件的基座与散热基板之间的接触热阻会阻碍其芯片PN结与散热基板之间的热传导,从而影响到器件的光、色、电性能及寿命。导热胶片用于填充材料界面之间接合或接触时产生的微空隙及表面凹凸不平的孔洞,是减小接触热阻、降低芯片PN结温度的有效手段。文章主要通过测定热阻值来开展对导热胶片在实际应用中导热性能的研究。通过阻容...     

大功率LED针翅式散热器散热性能数值模拟

发光二极管(LED)作为新一代光源,得到广泛应用.然而在工作过程中,大部分的电能会转变为热能,使LED的结温升高,可靠性降低.为了使LED芯片产生的热量能够及时有效地散发出去,通常采用翅片散热方法对其进行散热.采用数值模拟的方法对大功率LED针翅式散热器的散热性能进行了研究.为了验证模型的准确性,利用K型热电偶和安捷伦数据采集仪对散热器进行了实验测试.实验结果表明,该数值模型方程能够很好地模拟散热器的散热性能.此外,研究了大功率LED针翅式散热器的几何参数(翅片高度、半径、排数、列数)对LED散热性能(结温、对流换热系数和热阻)的影响,并且对翅片结构进行了优化分析.     

对PN结及其单向导电性的研究

本文首先介绍了PN结的概念,其次对PN结的单向导电性进行了分析,在此基础上提出了二极管的伏安特性及电流方程。     

大功率氮化镓基白光LED模组的散热设计

散热设计是大功率发光二极管(LED)模组结构设计的重要环节.首先利用计算流体力学方法对自然对流条件下大功率LED模组的温度场进行了模拟,提出并优化了模组可采用的散热片结构,进而对影响模组散热的其他关键因素进行了分析,结果表明,提高关键封装材料如银胶的热导率能够有效地降低芯片温度,提高芯片温度均匀性;多芯片封装时芯片的整体温度及均匀性相对于单芯片封装皆有改善.优化后的封装结构在5 W电功率注入条件下,芯片结温约60 ℃.     

大功率LED冷却用平板热管散热器的实验研究

对一种新型平板热管散热器冷却大功率LED芯片阵列进行实验研究。在自然对流冷却条件下,分析了平板热管散热器的启动特性、均温特性以及通电电流、倾角对其传热性能的影响。利用热电转换方法得到LED芯片的结温变化。实验结果表明:平板热管散热器的总热阻在0.3053～0.3425℃/W间,且散热器整体温度分布均匀合理,具有很强的散热能力;LED结温在47.9～59.0℃间,远低于110℃。     

单片集成式氮化镓基发光二极管的设计与制造

We report a new monolithic structure of GaN-based light-emitting diode(LED) which can be operated under high voltage or alternative current. Differing from the conventional single LED chip, the monolithic lightemitting diode(MLED) array contains microchips which are interconnected in series or parallel. The key chip fabrication processing methods of the monolithic LED array include deep dry etching, sidewall insulated protection, and electrode interconnection. A 12 V GaN-based blue high voltage light emitting diode was designed and fabricated in our experiment. The forward current-voltage characteristics of MLEDs were consistent with those of conventional single junction light emitting diodes.     

基于脉冲式U-I 特性的高功率型LED 热学特性测试

热学特性是影响功率型LED光学和电学特性的主要因素之一,设计了一套基于脉冲式U-I特性的功率型LED热学特性测试系统,可以测试在不同结温下LED工作电流与正向电压的关系,从而获得LED的热学特性参数。该系统通过产生窄脉冲电流来驱动LED,对其峰值时的电压电流进行采样,同时控制和采集LED的热沉温度,从而获得不同温度下LED的U-I特性曲线。与其他U-I测试系统相比,文中采用了窄脉冲(1 s)工作电流,LED器件PN结区处于发热与散热的交替过程,不会造成大的热积累,大大提高了测量精度。实验中,对某功率型LED进行了测试,获得了该器件的电压、电流和结温特性曲线,并利用B样条建立该器件的U-I-T模型,进而实现了对其结温的实时在线检测。     

基于顺向电压法的LED接面温度自动测量系统

采用顺向电压法测量LED的接面温度。通过使用数据采集卡,建立高功率LED的自动化接面温度测量系统,并以市场上现有的高功率LED为例进行了测量与对比,建立了高功率LED的I-V特性曲线及其电流—接面温度曲线,最后对测量结果与特性曲线进行了分析讨论。     

A study on the heat dissipation of high power multi-chip COB LEDs

In this study, the heat dissipation efficiencies of high power multi-chip COB (Chip-on-Board) LEDs with five different chip gaps were compared by assessing their junction temperature (T_j) and thermal resistance (R_th). Junction temperatures were measured using an IR camera and were also simulated by computational fluid dynamics (CFD) software. The effects of heat sinks with different surface areas, heat slugs made of different materials and different injection currents (different wattages) on high power LED junction temperatures are discussed. In addition, the optical characteristics of the LED, such as its lumens and luminous efficiency are evaluated. The experimental results show that a chip with a smaller gap has a higher junction temperature and more thermal resistance, and the junction temperature difference between the LEDs with the smallest and largest chip gaps is 3.12 °C. Optical performance analyses show that the LED with a larger chip gap has higher lumens and higher luminous efficiency. Thus, higher junction temperatures reduce the optical performance of high power LEDs.     

大电流冲击下MEH-PPV对白光LED发光特性的影响

针对用蓝光芯片激发YAG黄色荧光粉实现白光LED的光谱中缺少红色波段成份导致的显色性较差,通过在YAG荧光粉中混合质量分数分别为1%、3%、5%和10%的有机红光材料MEH-PPV,以提高白光LED的显色指数。将制备的白光LED加700mA冲击电流,通过对冲击前后光谱变化的分析结果发现,在大电流冲击下,由于散热不完善,PN结的热阻非常大,导致LED芯片快速老化,并且使有机材料MEH-PPV分解而大量失效;但是对比冲击前后黄光波段的光谱几乎没有变化。这表明,虽然MEH-PPV可以提高器件的显色指数,但是稳定性远不如YAG荧光粉。     

Parameter driven monitoring for a flip-chip LED module under power cycling condition

In this paper, a parameter driven monitoring model is introduced, in which a flip-chip LED module was investigated during a power cycling test. This approach was investigated to develop a monitoring model to describe thermally induced solder fatigue as root cause of flip-chip failure in a power cycling test. As monitoring parameter the thermal resistance of the LED module was used, which was determined by thermal impedance measurements of the whole LED module, as well as for each LED chip itself. Further analyses of the occurring temperature at the LED junction recorded of each chip during the power cycling test were used to generate a prediction model. The evaluation of the temperature change allowed to forecast the number of cycles until failure.     

氮化镓基白光发光二极管的快中子辐照效应

对注入量为 1×10¹⁴cm^-2 的快中子(1.2 MeV)对氮化镓(GaN)基白光发光二极管(LED)器件的辐照效应进行研究。通过测量和分析器件的电致发光谱(EL)、光功率-电流(L-I)和电流-电压(I-U)特性,发现器件辐照后光功率降低,而 EL 谱形状几乎没有变化,表明该注入量的中子辐照主要对器件中的蓝光 LED 芯片造成了损伤。进一步分析发现,中子辐照导致蓝光 LED 量子阱中产生大量非辐射复合中心,增加了漏电流并减小了量子阱中载流子密度,从而降低 LED 的输出光功率。由此,在原有 GaN 基蓝光 LED 等效电路模型的基础上,加入由中子辐照导致的影响因素,不仅有助于理解中子辐照对 LED 光功率的衰退影响机理,还为预测辐照后光功率的变化提供了可行性。     

根据IV曲线形态定性判断PN结性能的一种简易方法

利用MATLAB灵活丰富的绘图功能,在半对数坐标下画出了PN结的IV曲线。根据其形态,可以对PN结的性能作出定性判断。逼近该曲线所需的直线段越多,说明该PN结的性能与理想状态相距越远。这种方法不仅适用于同质PN结,也适用异质PN结和肖特基势垒二极管。     

结型LED的热特性分析与工程设计

文章从半导体结型发光器件热特性的概念出发，导出了ＬＥＤ各种瞬态工作状态下输出功率与热特性的概念出发，导出了ＬＥＤ各种瞬态工作状态下输出功率与热特性参数的关系。分析讨论了ＬＥＤ输出光功率对不同电流脉冲的响应特性以及ＬＥＤ热特性的设计方法。     

Edge current induced failure of semiconductor PN junction during operation in the breakdown region of electrical characteristic

Typical blocking I-V characteristics are shown and analyzed for PN junctions exhibiting a breakdown region above 1000 V from commercial diodes and power MOSFETs. The leakage reverse current of PN junctions from commercial silicon devices available at this time has a flowing component at the semiconductor-passivant material interface around the junction edge.Part of the plotted experimental current-voltage characteristic fits to linear variation and deviation from this variation at higher applied voltage is attributed to non-controlled current flow in the interfacial layer, between the silicon and passivating material from the junction periphery. The thin interfacial layer including atomic layers both from the semiconductor and passivating dielectric material with fixed charges has imperfections resulted from the junction passivation process. For controlled-avalanche PN junctions no deviation from linear voltage dependence of the reverse current is possible until breakdown region practically at right knee appears. For other PN junctions deviation of the reverse current from linear variation results in a breakdown region with round knee and still with visible voltage dependence at current increase. Such soft breakdown region caused by the phenomena in the interfacial layer is exhibited at lower applied reverse voltage than the expected one for breakdown caused by charge carrier avalanche multiplication at the junction. Operation even for short in the soft breakdown region can lead to PN junction failure and for this reason, a maximum working permissible reverse voltage is specified in device data sheet with a value under the breakdown region. Junction failure consists in significantly lower reverse voltage than the initial one or even electrical short-circuit caused by a spot of material degradation in the interfacial layer from the junction periphery. Operation of the controlled-avalanche diode in the breakdown region is possible only for single pulse of short duration and at junction temperature not higher than 175 °C. Above 150-175 °C even for controlled-avalanche diodes deviation from linear variation of the reverse current has been observed and soft breakdown region can appear before the expected avalanche breakdown. Device failure after operation in the breakdown region, caused by spot of material degradation at the junction periphery has occurred in such conditions. For high voltage commercial power MOSFETs operation in the avalanche breakdown region is limited to 150 °C.