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本文详细分析和探讨了矿区水工环地质工作的方法和技术要求。介绍了矿区水工环地质工作的任务和目标,明确了其在矿区开发和建设中的重要性。从勘查方法、监测方法、预测方法、技术要求和人员技术要求等方面进行了分析和探讨,勘查方法介绍了地质、水文、环境等勘查手段,并考虑了矿区地质特点;监测方法重点介绍了水文监测、地质监测、环境监测等方法 ;预测方法介绍了地下水流、地质灾害等的预测方法 ;技术要求和人员技术要求,阐述了需要的仪器设备和材料要求以及从业者需要具备的技术能力和素质。 相似文献
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在分析临钢设计规划院的工作特点后,根据临钢发展需要制定了该院的质量方针和质量目标,并进行了职责分解和责任细化,完善和规范了管理程序,并进行了监督检查和考核,做到了一定效果。 相似文献
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钢铁企业物质流、能量流和污染物流研究 总被引:8,自引:0,他引:8
建立了钢铁企业物质流、能量流和污染物流的分析方法.提出了钢铁企业生产过程和能源转换过程的数学模型;给出了工序能耗、产品能值和吨钢能耗表达式;同时考虑钢铁生产过程中资源消耗、产品生产和污染物排放等问题,提出了工序、产品和吨钢环境负荷分析方法和计算公式;分析了钢铁生产过程中影响上述指标的各种因素,以及能量流、物质流和污染物流三者间的相互关系;应用建立的分析模型,研究和分析了我国钢铁工业吨钢能耗和环境负荷的变化与进步. 相似文献
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论述了电力系统无功功率和功率因数的意义,分析了无功功率的产生和对电网的影响,介绍了株冶供电系统无功补偿和提高功率因数的措施,阐述了无功补偿给电网和工厂带来的效益,并提出了对供电系统无功补偿措施进一步完善的建议。 相似文献
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简述了武钢第一炼钢厂的生产历程和现状;阐述了对平炉——模铸工艺进行技术改造的必要性和可行性;简介了技术改造的规模、产品大纲和采用的主要工艺技术及装备;并对投产后的生产效果和经济效益作了预测和评估。 相似文献
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Arjan Ciftja Thorvald Abel Engh Merete Tangstad 《Metallurgical and Materials Transactions A》2010,41(12):3183-3195
The wetting behavior of refractory materials by molten silicon is important in the refining and casting of silicon with respect to production of low-cost solar cells. Here we studied the wetting properties of several graphite materials by molten silicon. These materials are used in the photovoltaic industry. The sessile drop method is employed to measure the contact angles. Initially, molten silicon does not wet graphite materials. The initial contact angles measured are approximately 120 deg. Molten silicon will react with C to form β-SiC and to infiltrate the refractory. Because losses of Si should be minimized, infiltration of Si into the refractory also is a problem. Surface roughness increases the contact area between Si and refractory and thus the loss of Si. Equilibrium wetting angles of 0 deg to 31 deg are measured. With increasing surface roughness, the equilibrium wetting angles decrease. The results show that the infiltration depth of molten silicon increases with the average pore size of graphite materials. 相似文献
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WEI Yao-wu LI Nan CHEN Xiao-xia HU Tie-shan RAO Jiang-ping TAO Xiao-lin 《钢铁研究学报(英文版)》2008,15(3):92-94
The silicon pick-up of interstitial-free steel (IF steel) from resin bonded MgO-SiC refractories is studied via a medium frequency induction furnace. Samples of IF steel were heated in MgO-SiC crucibles with mould flux cover at 1 600 ℃ for 180 min. The silicon contents of IF steel samples taken from the molten steel in every 30 min were examined and the refractories after heating were investigated by electron probe microanalysis (EPMA) with energy dispersive spectrometer (EDS). The silicon content of steel rapidly increased in the first 90 min of beating, and then decreased because of the formation of liquid layer on the refractory. Liquid layer separated the liquid steel from the bulk refractory and stopped the pick-up of silicon. At the same time, desilication via oxygen through the liquid layer and flux started to reduce the silicon content of the liquid steel 相似文献
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介绍了硅钢CSP工程辊底式均热炉的技术特性,详细阐述了辊底式均热炉工艺特点.根据硅钢均热要求,通过采取不同烧嘴布置方法和燃烧控制技术,选用耐火纤维模块和绝热材料等相关技术措施,满足了出钢温度要求. 相似文献
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Jesse F. White Luyao Ma Karl Forwald Du Sichen 《Metallurgical and Materials Transactions B》2014,45(1):150-160
Graphite as a refractory material has found wide application in many process steps to produce photovoltaic silicon. In the current study, the melting behavior of silicon in contact with different grades of graphite was investigated. The infiltration of silicon into graphite was found to be highly dependent on the internal structure of the graphite substrate. It was confirmed that the heating history of silicon in contact with a graphite substrate strongly influences the melting behavior, which is likely attributed to a gas–solid reaction that forms SiC at less than the liquidus temperature of silicon and alters the surface properties of the graphite. It was also observed that a concentration of CO greater than 5 pct in the inlet gas leads to SiC formation on the surface of the silicon and severely hinders melting. 相似文献
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晶体硅太阳能电池用硅片制备工艺及关键技术 总被引:2,自引:1,他引:1
多晶硅片或单晶硅片是光伏产业链中太阳能电池片生产的基板材料,近年光伏产业的迅猛发展极大促进了硅片制造技术和装备的飞速发展,文章介绍了当前晶体硅太阳能电池用硅片制备的主要工艺,并对其中的关键技术及发展状况进行了论述。 相似文献
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硅中的缺陷和硅片热处理 总被引:2,自引:0,他引:2
本文评术了近年来着重研究的COP、LSTD、FPD和BMD等硅中的微缺陷。介绍了硅片在氢或氩气中高温退火对消除硅中微缺陷,提高GOI合格率的实验结果。研究表明,硅片的高温退火是提高硅片质量的一种技术途径。 相似文献