Filament metal contamination and Raman spectra of hot filament chemical vapor deposited diamond films

Chemical vapor deposited diamond films grown in a hot filament reactor using three filament metals (tungsten, tantalum, and rhenium) have been analyzed for their metal impurity content. This is the first report wherein all three common CVD filament metals have been examined and a single technique used for diamond film analysis. Tungsten carbide filaments yielded the lowest impurity level (few ppm by mass), whereas rhenium yielded the highest (parts per thousand). The effects of filament temperature and addition of ammonia or oxygen to the reactant gas mixture were examined. A correlation was observed between the metal content of the product films and their quality, as judged using Raman spectroscopy. Films with the highest metal content yielded Raman spectra showing the lowest fluorescence background, the smallest sp² carbon contribution, and the narrowest 1332 cm⁻¹ diamond line.     

A chemical adsorption growth model for hot filament chemical vapor deposition diamond

In this paper, a chemical adsorption model for hot filament chemical vapor deposition (HF-CVD) of diamond films has been proposed based on some recent experimental data. The coverages of H and CH₃ precursors on the growing surface have been calculated according to the equilibrium between the adsorption and desorption of the two precursors at a certain substrate temperature T_s. The result shows that the H coverage decreases markedly with increasing T_s when T_s is over a critical temperature T_c. Below the temperature T_c, it comes close to 1. Thus, the quality deterioration of diamond films deposited at rather high substrate temperatures may be attributed to the poor H coverage on the surface. The value of T_c is determined by H atom concentration n_H in the reactor. When n_H is greater than 3.2×10⁻¹¹ mol cm⁻³, T_c is above 1000 K. The CH₃ coverage shows a maximum within the range of the studied T_s. With the typical CH₃ concentrations, the CH₃ coverage reaches the maximum at T_s∼1100 K. A growth rate formula has been developed on the basis of the temperature dependent CH₃ coverage. The formula shows that the growth rate follows the Arrhenius law at relative low T_s, but it rapidly decreases when T_s is rather high, which is in good agreement with the experimental results.     

Analysis of diamond nucleation on molybdenum by biased hot filament chemical vapor deposition

The nucleation and initial growth of diamond on molybdenum using biased hot filament chemical vapor deposition were investigated by scanning electron microscopy, Raman spectroscopy and adhesion force tests. The studies showed that the negative biased pre-treatment greatly enhanced the nucleation density and adhesion force of diamond films on molybdenum. The experimental evidence was confirmed that there is large stress near the interface between the diamond and the Mo substrate, which were originated from the disordered graphite phases and molybdenum carbide near the interface. This may play an important role during nucleation stage. However, larger stress can cause the degradation of the adhesion force of diamond films on Mo substrate. However, the adhesion force was enhanced with increasing bias voltage. The theoretical relationship between the adhesion force and the bias voltage is given by theoretical calculation.     

Characterization of boron-doped micro- and nanocrystalline diamond films deposited by wafer-scale hot filament chemical vapor deposition for MEMS applications

Micro- and nanocrystalline diamond (MCD and NCD) films are deposited on 4-inch silicon substrates by a large-area multi-wafer-scale hot filament chemical vapor deposition (HFCVD) system. The films are in-situ doped by boron. The chemical and crystalline structures are studied by electron probe microanalysis (EPMA), Raman spectroscopy and X-ray diffraction (XRD). The microcrystalline films have a preferred (111) texture, while the nanocrystalline films exhibit (220) texture. Strain gauges and cantilever beam arrays are micro-fabricated by surface micro-machining techniques to characterize the residual strain and strain gradient of the diamond films. Both micro- and nanocrystalline films have small compressive strains of − 0.052% and − 0.040% respectively, with the strain gradient of about 10^− 5 μm^− 1. These values are low enough to enable the realization of many MEMS devices.     

Selective growth of diamond and carbon nanostructures by hot filament chemical vapor deposition

Diamond and carbon nanostructures have been synthesized selectively on differently pretreated silicon substrates by hot filament chemical vapor deposition in a CH₄/H₂ gas mixture. Under typical conditions for CVD diamond deposition, carbon nanotube and diamond films have been selectively grown on nickel coated and diamond powder scratched silicon surface, respectively. By initiating a DC glow discharge between the filament and the substrate holder (cathode), well aligned carbon nanotube and nanocone films have been selectively synthesized on nickel coated and uncoated silicon substrates, respectively. By patterning the nickel film on silicon substrate, pattern growth of diamond and nanotubes has been successfully achieved.     

Nucleation and growth of diamond films on aluminum nitride by hot filament chemical vapor deposition

Nucleation and growth of diamond films on aluminum nitride (ALN) coatings were investigated by scanning electron microscopy, Raman spectroscopy and scratch test. ALN films were grown in a magnetron sputtering deposition. The substrates were Si(111) and tungsten carbide (WC). Chemical vapor deposition (CVD) diamond films were deposited on ALN films by hot filament CVD. The nucleation density of diamond on ALN films was found to be approximately 10⁵ cm⁻², whereas over 10¹⁰ cm⁻² after negative bias pre-treatment for 35 min was −320 V, and 250 mA. The experimental studies have shown that the stresses were greatly minimized between diamond overlay and ALN films as compared with WC substrate. The results obtained have also confirmed that the ALN, as buffer layers, can notably enhance the adhesion force of diamond films on the WC.     

Doping of vanadium to nanocrystalline diamond films by hot filament chemical vapor deposition

Doping an impure element with a larger atomic volume into crystalline structure of buck crystals is normally blocked because the rigid crystalline structure could not tolerate a larger distortion. However, this difficulty may be weakened for nanocrystalline structures. Diamonds, as well as many semiconductors, have a difficulty in effective doping. Theoretical calculations carried out by DFT indicate that vanadium (V) is a dopant element for the n-type diamond semiconductor, and their several donor state levels are distributed between the conduction band and middle bandgap position in the V-doped band structure of diamond. Experimental investigation of doping vanadium into nanocrystalline diamond films (NDFs) was first attempted by hot filament chemical vapor deposition technique. Acetone/H₂ gas mixtures and vanadium oxytripropoxide (VO(OCH₂CH₂CH₃)₃) solutions of acetone with V and C elemental ratios of 1:5,000, 1:2,000, and 1:1,000 were used as carbon and vanadium sources, respectively. The resistivity of the V-doped NDFs decreased two orders with the increasing V/C ratios.     

Synthesis of nanocrystalline diamond films by DC plasma-assisted argon-rich hot filament chemical vapor deposition

Continuous nanocrystalline diamond (NCD) films were grown in an argon-rich gas atmosphere with relatively high growth rates by sustaining a low power (5 W) DC plasma in a hot filament chemical vapor deposition system (HFCVD). The parameter window for the synthesis of NCD films was studied as a function of argon, methane and hydrogen concentrations, as well as substrate temperature and DC bias. The results are consistent with reports indicating that the DC plasma induces re-nucleation by ion bombardment during the initial growth step and helps to maintain the atomic H and hydrocarbon species near the growing surface. It was found that DC plasma-assisted HFCVD enables high NCD growth rates and expands the parameter window, rendering it unnecessary to heat the filament above 2800 K.     

Mechanism of diamond nucleation enhancement by electron emission via hot filament chemical vapor deposition

The mechanism of diamond nucleation enhancement by electron emission in the hot filament chemical vapor deposition process has been investigated by scanning electron microscopy, Raman spectroscopy and infrared (IR) absorption spectroscopy. The maximum value of the nucleation density was found to be 10¹¹ cm⁻² with a −300 V and 250 mA bias. The electron emission from the diamond coating on the electrode excites a plasma, and greatly increases the chemical species, as we have seen by in situ IR absorption. The experimental studies showed that the diamond and chemical species were transported and scattered from the diamond coating on the electrode and through the plasma towards the substrate surface, where they caused enhanced nucleation.     

Growth of nanodiamond/carbon-nanotube composites with hot filament chemical vapor deposition

The growth of diamond/carbon-nanotube (CNT) composites by Hot Filament Assisted Chemical Vapor Deposition (HFCVD) was investigated. The growth was achieved by pre-dispersing commercially available multiwalled CNTs onto a Si(100) surface and subsequently growing diamond nanoparticles over this layer. The diamond/CNT composites were characterized with SEM, TEM, and Raman Spectroscopy. It was found that in a flow of 1% CH₄ in H₂ (a typical condition for microcrystalline diamond growth using HFCVD) most of the CNTs are destroyed by the harsh growth conditions. Reduction in the etching of the CNTs was achieved by reducing the H₂ partial pressure in the precursor flow. There exists an optimal between 2–5% of CH₄ in H₂ wherein the CNTs are not destroyed and the resulting diamond film retains a high percentage of its sp³ structure. The TEM analyses showed that nanometer sized diamond particles nucleate on the surface of the CNTs and grow radially outward. The retention of the CNT structure and the direct growth of the diamond on the CNTs, the two factors necessary for good load transfer between a matrix and reinforcement, suggest the possibility of using this material as a structural composite. Based on the characterization of the composite, a growth mechanism for diamond onto the CNTs was proposed.     

The effect of d.c. glow discharge on hot filament chemical vapor deposition of diamond

The origin of bias-enhanced nucleation and growth of diamond has been investigated in hot filament chemical vapor deposition with two parallel W electrode wires inserted between filament and two floating Si substrates. An electrical voltage has been applied to the W electrodes to produce a glow discharge, which occurs in bias-enhanced deposition processes, during deposition. Substantial nucleation and growth enhancements occurred on the substrate near the negative glow of the d.c. discharge under the cathode wire. These observations indicate that the enhanced deposition of diamond in both positive and negative bias processes arises from chemically active species in the negative glow region rather than from electron or ion bombardment effects.     

Heteroepitaxial nucleation of diamond on Si(100) via double bias-assisted hot filament chemical vapor deposition

A new process has been developed to obtain high density epitaxial diamond nucleation via a double bias-assisted hot filament chemical vapor deposition (HFCVD). In the process, a negative bias voltage is applied to the Si substrate and a positive bias voltage is applied to a steel grid placed on top of the hot filaments. With this arrangement, a stable plasma can be generated between the grid and the hot filaments. Ions in the plasma are then drawn to the substrate by a negative substrate bias voltage. The impinging rate of these ions can be easily controlled by adjusting the grid current, and the ion energy can be independently controlled by adjusting the substrate bias voltage. Hence, the energy and dosage of ion bombardment onto the Si(100) substrate can be controlled easily and independently. With the controlled ion bombardment, high density and heteroepitaxial nucleation can be achieved routinely. After the nucleation process, highly textured diamond films were grown by either the HFCVD or the microwave plasma chemical vapor deposition process (MPCVD).     

Low temperature growth of highly transparent nanocrystalline diamond films on quartz glass by hot filament chemical vapor deposition

Highly transparent and hard nanocrystalline diamond (NCD) films were prepared on quartz glass by hot filament chemical vapor deposition (HFCVD). The effects of total gas pressure, substrate's temperature, and concentration of CH₄ on the grain size, surface's roughness and hardness, growth rate, as well as the optical properties of NCD films were investigated. The results indicated that with a low total gas pressure and high CH₄ concentration, high frequency of secondary nucleation can be obtained. In addition, low substrate temperature can increase the rate of the hydrogen atom etched sp² graphite carbon in the film, yielding a smooth surface of NCD films and very high sp³ content. Under optimized conditions, the hardness can be enhanced up to 65 Gpa, with 80% maximum transmittance in the visible light region. The aforementioned reaction platform outcomes a 1.2 μm thickness of NCD coating with a low root-mean-square (r.m.s.) surface roughness around 12–13 nm and a high growth rate around 1 μm/h. The influences of the total gas pressure, substrate's temperature, and CH₄ concentration for growing NCD films were also discussed in this paper.     

A new polarised hot filament chemical vapor deposition process for homogeneous diamond nucleation on Si(100)

A new hot filament chemical vapor deposition with direct current plasma assistance (DC HFCVD) chamber has been designed for an intense nucleation and subsequent growth of diamond films on Si(100). Growth process as well as the I=f(V) characteristics of the DC discharge are reported. Gas phase constituents activation was obtained by a stable glow discharge between two grid electrodes coupled with two sets of parallel hot filaments settled in-between and polarised at the corresponding plasma potential. The sample is negatively biased with a small 10–15 V extraction potential with respect to the cathode grid. Such design allows to create a high density of both ions and radicals that are extracted and focussed onto the surface of the sample. The current density onto the sample can be finely tuned independently of the primary plasma. A homogeneous plasma fully covering the sample surface is visualized. Consequently, a high-density nucleation (⩾10¹⁰ cm⁻²) occurs.     

Nucleation of diamond over nanotube coated Si substrate using hot filament chemical vapor deposition (CVD) system

We studied the use of carbon nanotubes as a seeding layer for the nucleation of diamond on Si (100) substrate by using a hot filament chemical vapor deposition (HFCVD) system. Prior to deposition, substrates were seeded with multi-wall carbon nanotube (MWCNT) powder which was prepared separately. MWCNTs were used as nucleation precursors. The diamond grains grew essentially over the nanotubes with a higher growth density in comparison with the un-seeded substrates. The scanning electron microscopy (SEM) image of surface morphology shows crystallites of cauliflower shaped grains. The micro Raman spectroscopic results show a sharp peak at 1,332 cm^-1 corresponding to diamond phase. X-ray photoelectron spectroscopic study show the presence of carbon (C_1s) phase. This paper is dedicated to Professor Hyun-Ku Rhee on the occasion of his retirement from Seoul National University.     

High pressure and high temperature treatment of chemical vapor deposited polycrystalline diamond: From opaque to transparent

The enhanced optical properties of chemical vapor deposited (CVD) diamond have been pursued in academia and industry for many applications. However, the barrier of CVD technology limits the application field of diamond. Herein, the performance of CVD polycrystalline diamond thick films was improved by high-pressure and high-temperature (HPHT) treatment. The microstructures of CVD polycrystalline diamond films before and after HPHT treatments were thoroughly examined using optical microscope, UV–visible and infrared absorption, Raman spectroscopy, scanning electron microscope (SEM) and transmission electron microscope (TEM). It is found that the transparency of the CVD samples at 10 GPa increases dramatically with processing temperatures, from the original opacity to almost full optical transparency. Through spectroscopic and microstructural analyses, the modification mechanism of CVD polycrystalline diamond under HPHT conditions is proposed. The results show that the HPHT treatment can significantly enhance the optical properties of the starting CVD polycrystalline diamond films.     

Effect of carbonitriding temperature process on the adhesion properties of diamond like-carbon coatings deposited by PECVD on austenitic stainless steel

The deposition of adherent coatings such as diamond-like carbon (DLC) on substrates of iron-based materials is difficult to obtain for two reasons: high residual compressive stress occurs in the inner film formation, and the mismatch of thermal expansion coefficient between steel and DLC film generates delamination effects. In order to determine the carbonitriding temperature prior to film deposition, the steel substrate and the DLC films were analyzed for their microstructure and mechanical properties of adhesion as a function of temperature. The technique used to deposit the coating was DC-pulsed plasma enhanced chemical vapor deposition. The delamination distances and the critical load of the film were obtained by scratch testing. The surface analysis by X-ray diffraction indicated the formation of nitride phases on the steel. Raman spectroscopy showed the fraction of sp³ carbon bonds in DLC films. Hardness profiling was used to verify the extent of the interface modified by carbonitriding along the cross section. For this, the steel sample with the appropriate surface modification to have high adhesion of the DLC film was used.     

Multiple twinning and nitrogen defect center in chemical vapor deposited homoepitaxial diamond

Homoepitaxial diamond films were grown on polished {100} faces of single crystal type IIa diamond substrates using microwave plasma assisted chemical vapor deposition system. 14 homoepitaxial diamond films were grown under a variety of substrate temperatures (1000–2000°C), methane concentration (1–6% in hydrogen gas) and processing pressure (60–200 Torr). Electron paramagnetic resonance (EPR) studies demonstrate that nitrogen is incorporated as a singly substitutional impurity (P1-defect center) and the nitrogen concentration is in the range 10–100 parts per million (ppm). The substitutional nitrogen concentration in homoepitaxial diamond was observed to decrease with increasing substrate temperature. Multitwin percentages of all grown diamonds derived from EPR spectra are correlated with the growth parameter α, which is simply the growth velocity along the 〈100〉 direction divided by the growth velocity along the 〈111〉 direction. With the aid of multitwin morphology and multitwin percentages derived from EPR, we describe conditions under which a twin-free and low defect single crystal diamond can be grown from the vapor phase on the {100} oriented substrates.     

Q235钢热浸镀铝微弧氧化层的生长规律

微弧氧化是在普通阳极氧化技术基础上建立起来的一项高新技术，在Q235钢表面热浸镀铝后再进行微弧氧化获得一陶瓷层。研究了强化时间和电流密度对所得陶瓷层向内、向外生长厚度的影响，同时研究了陶瓷层向内与向外生长之间的关系。结果表明，微弧氧化陶瓷层向内与向外的生长比例受强化时间和电流密度综合控制。     

Synthesis of carbon nanotubes by microwave plasma-enhanced hot filament chemical vapor deposition

A combined system of microwave plasma-enhanced chemical vapor deposition (MPECVD) and hot filament CVD (HFCVD) has been developed for the growth of various carbon nanotubes, where the source gas (methane) can be decomposed independently through microwave plasma and hot tungsten filament. It is found that microwave plasma provides more efficiently carbon sources for the growth of carbon nanotubes (CNTs). By the help of microwave plasma, long CNTs array with length of 0.3 mm and high-density single-walled carbon nanotubes (SWNTs) have been grown by thermal CVD and hot filament CVD, respectively. Raman spectra of the SWNTs reveal high crystalline as well as narrow diameter distribution.