Low‐Temperature,Nontoxic Water‐Induced Metal‐Oxide Thin Films and Their Application in Thin‐Film Transistors

Here, a simple, nontoxic, and inexpensive “water‐inducement” technique for the fabrication of oxide thin films at low annealing temperatures is reported. For water‐induced (WI) precursor solution, the solvent is composed of water without additional organic additives and catalysts. The thermogravimetric analysis indicates that the annealing temperature can be lowered by prolonging the annealing time. A systematic study is carried out to reveal the annealing condition dependence on the performance of the thin‐film transistors (TFTs). The WI indium‐zinc oxide (IZO) TFT integrated on SiO₂ dielectric, annealed at 300 °C for 2 h, exhibits a saturation mobility of 3.35 cm² V^?1 s^?1 and an on‐to‐off current ratio of ≈10⁸. Interestingly, through prolonging the annealing time to 4 h, the electrical parameters of IZO TFTs annealed at 230 °C are comparable with the TFTs annealed at 300 °C. Finally, fully WI IZO TFT based on YO_x dielectric is integrated and investigated. This TFT device can be regarded as “green electronics” in a true sense, because no organic‐related additives are used during the whole device fabrication process. The as‐fabricated IZO/YO_x TFT exhibits excellent electron transport characteristics with low operating voltage (≈1.5 V), small subthreshold swing voltage of 65 mV dec^?1 and the mobility in excess of 25 cm² V^?1 s^?1.     

Top Interface Engineering of Flexible Oxide Thin‐Film Transistors by Splitting Active Layer

The effect of active layer (amorphous indium–gallium–zinc oxide, a‐IGZO) splitting on the performances of back‐channel‐etched (BCE) and etch‐stopper (ES) thin‐film transistors (TFTs) on polyimide substrate is studied. While the performance of BCE TFT is independent of active layer splitting, the performance of ES TFT is improved significantly by splitting the active layer into 2–4 µm width along the channel. The saturation mobility is enhanced from 24.3 to 76.8 cm² V^?1 s^?1 and this improvement is confirmed by the operation of a ring oscillator made of the split TFTs also. X‐ray photoelectron spectroscopy (XPS) analysis of the split a‐IGZO indicates the incorporation of F at the island interface and thus improves the top interface quality, leading to a significant improvement of the top channel TFT mobility from 0.25 to 24.22 cm² V^?1 s^?1. This improvement is correlated with bonding of In with F at the top interface according to XPS results. The bias stability, hysteresis, and mechanical stability of the ES a‐IGZO TFT are also remarkably improved by splitting a‐IGZO active layer.     

Thin Film Deposition of Semiconducting Ni-Co Oxide Spinel with Adequate Electrical and Optical Properties for Energy Application

Nickel-cobalt oxide with spinel structure was successfully fabricated using a wet chemical route followed by calcinations at 300 °C. In nickel-cobalt spinel oxide, Ni²⁺ ions occupy the octahedral sites and Co³⁺ ions are distributed over both octahedral and tetrahedral sites. Very interestingly, nickel-cobalt spinel oxide does not only show a p-type semi-conducting behavior material but also exhibits desired transparency in infrared wavelengths. Electrical and optical properties of the deposited films were investigated as a function of different processing conditions. The sputtering target is fabricated by homogeneously mixing oxide powders and followed by sintering at 1,500 °C. The nickel-cobalt oxide film showed a resistivity as low as 10^?2 Ω-cm by radio frequency (RF) magnetron sputtering in a pure oxygen atmosphere. The sputter-deposited nickel-cobalt oxide films also showed more than 70% transmittance in the infrared range.     

Zinc Oxide Thin-Film Transistors Fabricated at Low Temperature by Chemical Spray Pyrolysis

We report the electrical behavior of undoped zinc oxide thin-film transistors (TFTs) fabricated by low-temperature chemical spray pyrolysis. An aerosol system utilizing aerodynamic focusing was used to deposit the ZnO. Polycrystalline films were subsequently formed by annealing at the relatively low temperature of 140°C. The saturation mobility of the TFTs was 2 cm²/Vs, which is the highest reported for undoped ZnO TFTs manufactured below 150°C. The devices also had an on/off ratio of 10⁴ and a threshold voltage of ?3.5 V. These values were found to depend reversibly on measurement conditions.     

Fabrication of Titanium Oxide-Based Composites by Reactive SPS Sintering and Their Thermoelectric Properties

Titanium oxide-based composites containing (1) Nb, (2) Nb and Sr, and (3) Sr and La were fabricated by a combination of wet processing and reactive spark plasma sintering in which the metal oxide components were reduced by reaction with titanium nitride. If only TiO₂ was used as the starting material, several Magneli-type phases of oxygen-deficient titanium oxides were obtained. When mixed with Nb ions with Ti:Nb = 0.9:0.1, microsegregation of Nb ions was observed (case 1). If Sr was added, a perovskite, SrTiO₃ (STO) phase occurred (case 2), which contained La ions in the case of La addition (case 3). The sintered compacts consisted largely of grains of about 1 μm in size. In the case of Ti-Nb combination (case 1), a unique stripe pattern also appeared inside the grains. The electrical conductivity increased monotonically with increasing temperature in the case of the pure Magneli phases and the Nb-containing composite, whereas bow-shaped temperature dependences with a maximum were observed in the case of the composites containing STO phases. The Seebeck coefficients were commonly negative, and the absolute values increased with temperature. The thermal conductivity was between 2 W m^?1 K^?1 and 4 W m^?1 K^?1 in the temperature range from room temperature to 800°C. A maximum ZT of 0.34 was achieved at 800°C (case 2).     

Synthesis, Characterization, and Electroluminescent Characteristics of Mixed-Ligand Zinc(II) Complexes

Mixed-ligand zinc complexes, i.e., 2-(2-hydroxyphenyl)benzothiazolato-5,7- dichloro-8-hydroxyquinolinato zinc(II) [ZnBTZ(Cl₂q)], 2-(2-hydroxyphenyl) benzothiazolato-5,7-dimethyl-8-hydroxyquinolinato zinc(II) [ZnBTZ(Me₂q)], and 2-(2-hydroxyphenyl)benzothiazolato-2-carbonitril-8-hydroxyquinolinato zinc(II) [ZnBTZ(CNq)], were synthesized and characterized. The metal complexes have high thermal stability (>300°C) and high glass-transition temperature (>150°C) and are suitable for optoelectronic applications. Optical properties of the synthesized complexes were characterized by using ultraviolet–visible (UV–Vis) and photoluminescence spectroscopy. Color tuning by changing the ligand was observed in synthesized complexes. Multilayered organic electroluminescent devices were fabricated having structure indium–tin oxide (ITO)/N,N′-diphenyl-N,N′-bis(1-naphthyl)-1,1′-biphenyl-4,4′-diamine (α-NPD)/zinc complex/2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP)/tris(quinolinolate)Al^III (Alq₃)/LiF/Al using the synthesized complexes as emissive material. The electroluminescence spectra show peak emission centered at 532 nm, 572 nm, and 541 nm, respectively, for these materials. The emitted light has chromaticity with Commission Internationale d’Éclairage coordinates x = 0.35 and y = 0.56 for ZnBTZ(Cl₂q), x = 0.49 and y = 0.47 for ZnBTZ(Me₂q), and x = 0.48 and y = 0.40 for ZnBTZ(CNq) complex.     

Investigation of MBE-Growth of Mid-Wave Infrared Hg<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>Cd<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Se

Undoped mid-wave infrared Hg_1?xCd_xSe epitaxial layers have been grown to a nominal thickness of 8–14 μm on GaSb (211)B substrates by molecular beam epitaxy (MBE) using constant beam equivalent pressure ratios. The effects of growth temperature from 70°C to 120°C on epilayer quality and its electronic parameters has been examined using x-ray diffraction (XRD) rocking curves, atomic force microscopy, Nomarski optical imaging, photoconductive decay measurements, and variable magnetic field Hall effect analysis. For samples grown at 70°C, the measured values of XRD rocking curve full width at half maximum (FWHM) (116 arcsec), root mean square (RMS) surface roughness (2.7 nm), electron mobility (6.6?×?10⁴ cm² V^?1 s^?1 at 130 K), minority carrier lifetime (～?2 μs at 130 K), and background n-type doping (～?3?×?10¹⁶ cm^?3 at 130 K), indicate device-grade material quality that is significantly superior to that previously published in the open literature. All of these parameters were found to degrade monotonically with increasing growth temperature, although a reasonably wide growth window exists from 70°C to 90°C, within which good quality HgCdSe can be grown via MBE.     

Highly transparent and conducting zinc oxide films deposited by activated reactive evaporation

Highly transparent and conducting undoped zinc oxide films have been obtained with a best resistivity of ～1.1 × 10^-3 Ω cm, a carrier density of ～1.5 × 10²⁰ cm^?3 and a mobility of ～38 cm²V^{?1s ?1}. These were produced by activated reactive evaporation at a deposition rate of 2 to 8Å/s with a substrate temperature ≤200° C. The films deposited by this process were found to have resistivities that were thickness independent and also were relatively insensitive to deposition parameters. In terms of conductivity, it was found that films deposited at higher temperatures (T > 300°+ C) were always inferior to the films deposited below 200° C. High temperature vacuum annealing (350° C) significantly degraded the resistivity of the undoped films deposited at low temperature; this was attributable to a drop in both the electron concentration and the mobility. Aluminum doping was found to be able to stabilize the electron concentration while the drop in mobility was found to be related to the choice of substrate.     

Ferroelectric random access memory based on one-transistor–one-capacitor structure for flexible electronics

We have demonstrated a low temperature process for a ferroelectric non-volatile random access memory cell based on a one-transistor–one-capacitor (1T1C) structure for application in flexible electronics. The n-channel thin film transistors (TFTs) and ferroelectric capacitors (FeCaps) are fabricated using cadmium sulfide (CdS) as the semiconductor and poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] copolymer as the ferroelectric material, respectively. The maximum processing temperature for the TFTs is 100 °C and 120 °C for the FeCaps. The TFT shows excellent access control of the FeCap in the 1T1C memory cell, and the stored polarization signals are undisturbed when the TFT is off. The fabricated 1T1C memory cell was also evaluated in a FRAM circuit. The memory window on the bit line was demonstrated as 2.3 V, based on the 1T1C memory cell with a TFT having dimensions of 80 μm/5 μm (W/L) and a FeCap with an area of 0.2 × 10^?3 cm² using a bit line capacitor of 1 nF pre-charged at 17.2 V. The 1T1C memory cell is fabricated using photolithographic processes, allowing the integration with other circuit components for flexible electronics systems.     

Effect of Sintering Temperature on Microstructure, Electrical Properties, and Thermal Expansion of Perovskite-Type La0.8Ca0.2CrO3 Complex Oxides Synthesized by a Combustion Method

Perovskite-type La_0.8Ca_0.2CrO₃ complex oxides were synthesized by a combustion method. Microstructural evolution, electrical properties, and thermal expansion behavior of the ceramics were investigated in the sintering temperature range of 1250°C to 1450°C. It was found that the electrical conductivity (σ _e) remarkably improved with increasing sintering temperature from 1250°C to 1400°C, ascribed to the development of microstructural densification, whereas it declined slightly above 1400°C due to generation of excessive liquid. The specimen sintered at 1400°C had a maximum conductivity of 31.6 S cm^?1 at 800°C, and lowest activation energy of 0.148 eV. The improvement of the thermal expansion coefficient (TEC) with increasing sintering temperature was monotonic as a result of the microstructural densification of the materials. The TEC of La_0.8Ca_0.2CrO₃ sintered at 1400°C was about 10.5 × 10^?6 K^?1, being consistent with other components as high-temperature conductors. With respect to microstructure, electrical properties, and thermal expansion, the preferable sintering temperature was ascertained to be about 1400°C, which is much lower than for the traditional solid-state reaction method.     

Low‐Temperature‐Processed Printed Metal Oxide Transistors Based on Pure Aqueous Inks

Additive patterning of transparent conducting metal oxides at low temperatures is a critical step in realizing low‐cost transparent electronics for display technology and photovoltaics. In this work, inkjet‐printed metal oxide transistors based on pure aqueous chemistries are presented. These inks readily convert to functional thin films at lower processing temperatures (T ≤ 250 °C) relative to organic solvent‐based oxide inks, facilitating the fabrication of high‐performance transistors with both inkjet‐printed transparent electrodes of aluminum‐doped cadmium oxide (ACO) and semiconductor (InO_x ). The intrinsic fluid properties of these water‐based solutions enable the printing of fine features with coffee‐ring free line profiles and smoother line edges than those formed from organic solvent‐based inks. The influence of low‐temperature annealing on the optical, electrical, and crystallographic properties of the ACO electrodes is investigated, as well as the role of aluminum doping in improving these properties. Finally, the all‐aqueous‐printed thin film transistors (TFTs) with inkjet‐patterned semiconductor (InO_x ) and source/drain (ACO) layers are characterized, which show ideal low contact resistance (R _c < 160 Ω cm) and competitive transistor performance (µ _lin up to 19 cm² V^?1 s^?1, Subthreshold Slope (SS) ≤150 mV dec^?1) with only low‐temperature processing (T ≤ 250 °C).     

Rate of Sublimation of Yb14MnSb11, a Thermoelectric Material for Space Power Applications

The compound Yb₁₄MnSb₁₁ is a p-type thermoelectric material of interest for space power applications. However, average rates of sublimation previously measured at 1000°C were unacceptably high. In at least one study, Yb₂O₃ was observed on the surface after testing. In this study, the rate of sublimation of Yb₁₄MnSb₁₁ was measured at 1000°C by use of a vacuum thermogravimetric analyzer (TGA) which continuously measures weight loss as a result of sublimation. This experiment revealed that the rate of sublimation decreased with time, but also resulted in formation of Yb₂O₃ on the surface, even though the base pressure at the start of the test was 1.9 × 10^?4 Pa (1.4 × 10^?6 torr). Subsequently, the effect of the Yb₂O₃ on the rate of sublimation was evaluated by performing interrupted vacuum furnace tests in which the sample was weighed after exposure at 1000°C for different times. During the weighing periods, the accumulated oxide scale was either completely removed or left to accumulate further on the surface. The interrupted furnace tests showed that formation of Yb₂O₃ on the surface was the likely cause of the reduction in the rate of sublimation of the Yb₁₄MnSb₁₁ when measured by use of the vacuum TGA, at least for the measured test duration. Therefore, uncoated material in the vacuum of space, where oxygen is absent, would be likely to sublime at a continuous rate in excess of 5 × 10^?3 g/cm²/h.     

Enhanced Thermoelectric Properties of Antimony Telluride Thin Films with Preferred Orientation Prepared by Sputtering a Fan-Shaped Binary Composite Target

p-Type antimony telluride (Sb₂Te₃) thermoelectric thin films were deposited on BK7 glass substrates by ion beam sputter deposition using a fan-shaped binary composite target. The deposition temperature was varied from 100°C to 300°C in increments of 50°C. The influence of the deposition temperature on the microstructure, surface morphology, and thermoelectric properties of the thin films was systematically investigated. x-Ray diffraction results show that various alloy composition phases of the Sb₂Te₃ materials are grown when the deposition temperature is lower than 200°C. Preferred c-axis orientation of the Sb₂Te₃ thin film became obvious when the deposition temperature was above 200°C, and thin film with single-phase Sb₂Te₃ was obtained when the deposition temperature was 250°C. Scanning electron microscopy reveals that the average grain size of the films increases with increasing deposition temperature and that the thin film deposited at 250°C shows rhombohedral shape corresponding to the original Sb₂Te₃ structure. The room-temperature Seebeck coefficient and electrical conductivity range from 101 μV K^?1 to 161 μV K^?1 and 0.81 × 10³ S cm^?1 to 3.91 × 10³ S cm^?1, respectively, as the deposition temperature is increased from 100°C to 300°C. An optimal power factor of 6.12 × 10^?3 W m^?1 K^?2 is obtained for deposition temperature of 250°C. The thermoelectric properties of Sb₂Te₃ thin films have been found to be strongly enhanced when prepared using the fan-shaped binary composite target method with an appropriate substrate temperature.     

Thermoelectric Properties of Al-Doped ZnO Thin Films

We have prepared 2 % Al-doped ZnO (AZO) thin films on SrTiO₃ substrates by a pulsed laser deposition technique at various deposition temperatures (T _dep = 300–600 °C). The thermoelectric properties of AZO thin films were studied in a low temperature range (300–600 K). Thin film deposited at 300 °C is fully c-axis-oriented and presents electrical conductivity 310 S/cm with Seebeck coefficient ?65 μV/K and power factor 0.13 × 10^?3 Wm^?1 K^?2 at 300 K. The performance of thin films increases with temperature. For instance, the power factor is enhanced up to 0.55 × 10^?3 Wm^?1 K^?2 at 600 K, surpassing the best AZO film previously reported in the literature.     

Comparative study of soluble naphthalene diimide derivatives bearing long alkyl chains as n-type organic thin-film transistor materials

In this study, several naphthalene tetracarboxylic acid diimide (NTCDI) derivatives substituted at the N and N′ positions with long normal alkyl chains of different lengths were evaluated as soluble n-type organic thin-film transistor (TFT) materials. NTCDI derivatives with diundecyl (NTCDI-C11), didodecyl (NTCDI-C12), and ditridecyl (NTCDI-C13) exhibited acceptable solubility in chloroform, and their TFTs showed typical n-type TFT performance with relatively high field effect electron mobility (～0.2 cm²/V s) after annealing at a workable temperature of 150 °C. Although NTCDI with dioctyl (NTCDI-C8) showed good solubility in chloroform, the TFT performance of this material was highly inferior to that of NTCDI-C11, NTCDI-C12, or NTCDI-C13. We could not anneal NTCDI-C8 thin films at workable temperatures in vacuo because of sublimation of the material from the substrates. In contrast, NTCDI with dipentadecyl (NTCDI-C15) and dioctadecyl (NTCDI-C18) exhibited both poor solubility for chloroform and poor TFT performance. In short, these compounds are not suitable as soluble n-type organic TFT materials.     

Good Thermal Stability,High Permittivity,Low Dielectric Loss and Chemical Compatibility with Silver Electrodes of Low-Fired BaTiO<Subscript>3</Subscript>–Bi(Cu<Subscript>0.75</Subscript>W<Subscript>0.25</Subscript>)O<Subscript>3</Subscript> Ceramics

(1 ? x)BaTiO₃–xBi(Cu_0.75W_0.25)O₃ [(1 ? x)BT–xBCW, 0 ≤ x ≤ 0.04] perovskite solid solutions ceramics of an X8R-type multilayer ceramic capacitor with a low sintering temperature (900°C) were synthesized by a conventional solid state reaction technique. Raman spectra and x-ray diffraction analysis demonstrated that a systematically structural evolution from a tetragonal phase to a pseudo-cubic phase appeared near 0.03 < x < 0.04. X-ray photoelectron analysis confirmed the existence of Cu⁺/Cu²⁺ mixed-valent structure in 0.96BT–0.04BCW ceramics. 0.96BT–0.04BCW ceramics sintered at 900°C showed excellent temperature stability of permittivity (Δε/ε _25°C ≤ ±15%) and retained good dielectric properties (relative permittivity ～1450 and dielectric loss ≤2%) over a wide temperature range from 25°C to 150°C at 1 MHz. Especially, 0.96BT–0.04BCW dielectrics have good compatibility with silver powders. Dielectric properties and electrode compatibility suggest that the developed materials can be used in low temperature co-fired multilayer capacitor applications.     

Solution‐Deposited Zinc Oxide and Zinc Oxide/Pentacene Bilayer Transistors: High Mobility n‐Channel,Ambipolar, and Nonvolatile Devices

A solution processed n‐channel zinc oxide (ZnO) field effect transistor (FET) was fabricated by simple dip coating and subsequent heat treatment of a zinc acetate film. The field effect mobility of electrons depends on ZnO grain size, controlled by changing the number of coatings and zinc acetate solution concentration. The highest electron mobility achieved by this method is 7.2 cm² V^?1 s^?1 with On/Off ratio of 70. This electron mobility is higher than for the most recently reported solution processed ZnO transistor. We also fabricated bilayer transistors where the first layer is ZnO, and the second layer is pentacene, a p‐channel organic which is deposited by thermal evaporation. By changing the ZnO grain size (or thickness) this type of bilayer transistor shows p‐channel, ambipolar and n‐channel behavior. For the ambipolar transistor, well balanced electron and hole mobilities are 7.6 × 10^?3 and 6.3 × 10^?3 cm² V^?1 s^?1 respectively. When the ZnO layer is very thin, the transistor shows p‐channel behavior with very high reversible hysteresis. The nonvolatile tuning function of this transistor was investigated.     

Influence of Annealing on Electrical Properties of an Organic Thin Layer-Based n-Type InP Schottky Barrier Diode

The electrical properties of a fabricated Au/polymethylmethacrylate (PMMA)/n-InP Schottky barrier diode have been analyzed for different annealing temperatures using current–voltage (I–V) and capacitance–voltage (C–V) techniques. It is observed that the Au/PMMA/n-InP structure shows excellent rectifying behavior. The extracted barrier height and ideality factor of the as-deposited Au/PMMA/n-InP Schottky contact are 0.68 eV (J–V)/0.82 eV (C–V) and 1.57, respectively. However, the barrier height (BH) of the Au/PMMA/n-InP Schottky contact increases to 0.78 eV (J–V)/0.99 eV (C–V) when the contact is annealed at 150°C for 1 min in nitrogen atmosphere. Upon annealing at 200°C, the BH value decreases to 0.72 eV (J–V)/0.90 eV (C–V) and the ideality factor increases to 1.48. The PMMA layer increases the effective barrier height of the structure by creating a physical barrier between the Au metal and the n-InP. Cheung’s functions are also used to calculate the series resistance of the Au/PMMA/n-InP structure. The interface state density (N _ss) is found to be 6.380 × 10¹² cm^?2 eV^?1 and 1.916 × 10¹² cm^?2 eV^?1 for the as-deposited and 150°C-annealed Au/PMMA/n-InP Schottky contacts, respectively. These results indicate that the interface state density and series resistance have a significant effect on the electrical characteristics of Au/PMMA/n-InP Schottky barrier devices. Finally, it is noted that the diode parameters change with increasing annealing temperature.     

Interface Microstructure and Performance of Sb Contacts in Bismuth Telluride-Based Thermoelectric Elements

A thermoelectric joint composed of p-type Bi_0.5Sb_1.5Te₃ (BiSbTe) material and an antimony (Sb) interlayer was fabricated by spark plasma sintering. The reliability of the thermoelectric joints was investigated using electron probe microanalysis for samples with different accelerated isothermal aging time. After aging for 30 days at 300°C in vacuum, the thickness of the diffusion layer at the BiSbTe/Sb interface was about 30 μm, and Sb₂Te₃ was identified to be the major interfacial compound by element analysis. The contact resistivity was 3 × 10^?6 ohm cm² before aging and increased to 8.5 × 10^?6 ohm cm² after aging for 30 days at 300°C, an increase associated with the thickness of the interfacial compound. This contact resistivity is very small compared with that of samples with solder alloys as the interlayer. In addition, we have also investigated the interface behavior of Sb layers integrated with n-type Bi₂Se_0.3Te_2.7 (BiSeTe) material, and obtained similar results as for the p-type semiconductor. The present study suggests that Sb may be useful as a new interlayer material for bismuth telluride-based power generation devices.     

Suppression of Red Luminescence in Wire Explosion Derived Eu:ZnO

Europium oxide (Eu₂O₃) is coated on zinc (Zn) wire using the electrophoretic deposition process. The coated Zn wire is subjected to the wire explosion process (WEP) which is rapid (< 15 min), and chimie douce (soft chemical, low temperature), in nature; this results in the formation of Eu doped ZnO. The explosion chamber contains oxygen (99.9%) at atmospheric pressure. Electron micrographs indicate that the particle sizes are ～ 80 nm. Diffractogram-based analysis suggests that the crystallite size is ~ 18–20 nm in the as-prepared doped ZnO nanoparticles. Electron paramagnetic resonance shows the presence of Zn vacancies and the cryo-photoluminescence spectrum indicates that Eu exists in the + 3 state. A combined Williamson–Hall plot and Kisielowski’s model based analysis indicates that Eu is a substitutional dopant in WEP derived Eu:ZnO particles. It is estimated that this material has ～ 0.24 at.% doping. This analysis also shows that, unlike another popular material GaN, in the case of ZnO, Eu³⁺ strictly substitutes for Zn²⁺ (i.e., dopant replacing a cation–anion pair does not seem possible). It may be noted that Eu³⁺ in a suitable host is oftentimes reported to be an efficient luminophore. The IR spectra show a band shift from 486 cm^?1 to 493 cm^?1; with peak shifts from 436 cm^?1 to 430 cm^?1 in Raman spectra. These too indicate the presence of Eu in the samples. However, at room temperature, only green luminescence (centered at 534 nm) is observed from the sample indicating (1) high concentrations of O_Zn anti-site defects and Zn vacancies, and (2) concomitant quenching of the luminescence at room temperature. Our results suggest that WEP is viable for synthesizing rare earth doped ceramic materials. However, obtaining efficient phosphors using this approach will likely require, (1) reduction of defect densities, and (2) appropriate passivation using post-processing.