Low phase noise heterojunction bipolar transistor oscillator

A low phase noise, heterojunction bipolar transistor (HBT) oscillator has been designed and fabricated for operation at X-band. The common emitter oscillator employs a high-Q dielectric resonator as the parallel feedback element between the base and collector terminals. Series capacitive feedback is used in the emitter to enhance the oscillator's negative output impedance. Single-sideband FM noise levels of -76 dBc/Hz and -102 dBc/Hz have been achieved at 1 kHz and 10 kHz frequency offsets, respectively, for an 11.06 GHz carrier frequency. This is one of the lowest phase noise levels ever reported for an X-band solid-state transistor oscillator.<>     

射频MEMS封装振荡器的稳定性研究

文章介绍了一种由MEMS圆盘谐振器和低噪声反馈电路构成的射频振荡器。MEMS谐振器具备高Q值,使得振荡器表现出良好的频率稳定性和低相位噪声。采用低成本的金锡键合工艺对双端口谐振器封装后,进一步提升了频率稳定性。低噪声电路由两级放大组成,在提供足够增益的情况下,提升了相位噪声性能。之后测试得到的相位噪声分别是在1 kHz 频偏处为-96 dBc/Hz,噪底 -128 dBc/Hz 。中期稳定性和阿伦方差的测试结果分别为±4 ppm和10 ppb。这些结果均表明,该振荡器在新一代无线通信中有广阔的应用前景。     

A W-band Frequency Source with Low Spurs and Low Phase Noise

A W-band millimeter wave frequency source is developed by frequency multiplier chain and injection locking. The referenced crystal oscillator (CO) signal 120 MHz is multiplied 400 times to output 48 GHz signal. Then, it is used as a referenced source of fundamental-wave injection-locked harmonic Gunn oscillator with output power more than 10 mW at 96 GHz and spurious output less than ?65 dBc. The measured phase noise is ?97 and ?105 dBc/Hz at 10 kHz and 200 kHz offset, respectively. At last, the influence of the flicker noise, provided by the frequency multipliers and amplifiers, is analyzed.     

S波段低相位噪声参考原

阐述了研制Ｓ波段低相噪参考源所需的晶振相噪特性、倍频器相噪特性，指出研制低相噪参考源的途径，在此基础上研制出了Ｓ波段极低相噪参考源，经严格测量，其相位噪声在１ｋＨｚ处优于－１２１ｄＢｃ／Ｈｚ，１００ｋＨｚ以外的相噪平底优于－１３５ｄＢｃ／Ｈｚ。所用２０次培频器几乎无附加相噪。     

一个8GHz高功率AlGaN/GaN HEMT VCO

基于中科院微电子所的AlGaN/GaN HEMT工艺研制了一个X波段高功率混合集成压控振荡器（VCO）。电路采用源端调谐的负阻型结构,主谐振腔由开路微带和短路微带并联构成,实现高Q值设计。在偏置条件为VD=20V, VG=-1.9V, ID=150mA时,VCO在中心频率8.15 GHz处输出功率达到28 dBm,效率21%,相位噪声-85 dBc/Hz@100 KHz,-128 dBc/Hz@1 MHz。调谐电压0~5V时,调谐范围50 MHz。分析了器件闪烁噪声对GaN HEMT基振荡器相位噪声性能的主导作用。测试结果显示了AlGaN/GaN HEMT工艺在高功率低噪声微波频率源中的应用前景。     

An 8 GHz high power AlGaN/GaN HEMT VCO

A high power X-band hybrid microwave integrated voltage controlled oscillator(VCO) based on Al-GaN /GaN HEMT is presented.The oscillator design utilizes a common-gate negative resistance structure with open and short-circuit stub microstrip lines as the main resonator for a high Q factor.The VCO operating at 20 V drain bias and-1.9 V gate bias exhibits an output power of 28 dBm at the center frequency of 8.15 GHz with an efficiency of 21%.Phase noise is estimated to be -85 dBc/Hz at 100 kHz offset and -1...     

一种钽酸锂压控振荡器的设计与实现

该文使用具有低电容比、宽调谐范围的钽酸锂晶体设计了一巴特勒共基低相位噪声压控振荡器,此设计在寻求高有载品质因数QL的同时保持了振荡器的输出功率。使用的钽酸锂晶体的无载品质因数Q0约为1.24×103,其频率为10.727MHz。设计出的巴特勒振荡器QL≈33%Q0,输出功率约为11dBm。不加压控的情况下,实际测得该振荡器的相位噪声结果为-85dBc/Hz@10 Hz和-145dBc/Hz@1kHz。在此基础上,增加一变容二极管作为压控元件设计了钽酸锂压控振荡器,在2~10 V范围内,测得控制电压压控斜率约为86.6×10-6/V,相位噪声测试结果优于-82dBc/Hz@10Hz和-142dBc/Hz@1kHz,实现了具有宽调谐范围的低相位噪声钽酸锂振荡器的设计。     

An X‐Band Carbon‐Doped InGaP/GaAs Heterojunction Bipolar Transistor MMIC Oscillator

This paper addresses a fully‐integrated low phase noise X‐band oscillator fabricated using a carbon‐doped InGaP heterojunction bipolar transistor (HBT) GaAs process with a cutoff frequency of 53.2 GHz and maximum oscillation frequency of 70 GHz. The oscillator circuit consists of a negative resistance generating circuit with a base inductor, a resonating emitter circuit with a microstrip line, and a buffering resistive collector circuit with a tuning diode. The oscillator exhibits 4.33 dBm output power and achieves ?127.8 dBc/Hz phase noise at 100 kHz away from a 10.39 GHz oscillating frequency, which benchmarks the lowest reported phase noise achieved for a monolithic X‐band oscillator. The oscillator draws a 36 mA current from a 6.19 V supply with 47.1 MHz of frequency tuning range using a 4 V change. It occupies a 0.8 mm × 0.8 mm die area.     

用于434/868MHz FSK/OOK CMOS发射机的锁相环设计

一种可输出434/868MHz信号的Σ-Δ分数分频锁相环在0.35μmCMOS工艺中集成。该发射机系统采用直接调制锁相环分频比的方式实现FSK调制,OOK的调制则通过功率预放大器的开-关实现。为了降低芯片的成本和功耗,发射机采用了电流数字可控的压控振荡器(VCO),以及片上双端-单端转换电路,并对分频器的功耗设计进行研究。经测试表明,锁相环在868MHz载波频偏为10kHz、100kHz和3MHz处的相位噪声分别为-75dBc/Hz、-104dBc/Hz和-131dBc/Hz,其中的VCO在100kHz频偏处的相位噪声为-108dBc/Hz。在发送模式时,100kHz相邻信道上的功率与载波功率之比小于-50dB。在直流电压2.5V的工作条件下,锁相环的电流为12.5mA,包括功率预放大器和锁相环在内的发送机总面积为2mm2。     

超低相位噪声超高速声表面波雷达频率综合器

介绍了一种新型的高性能雷达频率综合器的制作方法，即采用声表面波技术制作高性能的雷达频综器。采用这种方法成功地制造了Ｌ波段、Ｓ波段、Ｃ波段超低相位噪声超高速频率综合器。该类频综输出信号具有极低相位噪声（１．６ＧＨｚ处：单边带相位噪声Ｌｍ（１ｋＨｚ）＝－１２７ｄＢｃ／Ｈｚ；３．４ＧＨｚ处：Ｌｍ（１ｋＨｚ＝－１２２ｄＢｃ／Ｈｚ；６．８ＧＨｚ处：Ｌｍ（１ｋＨｚ）＝－１１６ｄＢｃ（Ｈｚ）、极短的频率切换时间（约１６０ｎｓ）、低杂波电平（Ｌ波段为－７０ｄＢ；Ｓ波段为－６５ｄＢ；Ｃ波段为－６０ｄＢ）、较多频点（５１点）等多项优异性能。同时，该频综通过了各项环境试验的考核，且长期工作性能稳定。     

低相噪硅雷达射频频率源的研究与设计

分析了频率源中各个模块的噪声传递函数,确定影响近端噪声的模块分别是鉴频鉴相器-电荷泵(PFD-CP)、分频器;在默认分频器相位噪声为-158dBc/Hz,通过matlab建模推断,需要PFD-CP模块在10kHz频偏处的输入噪声达到-143dBc/Hz,才能实现频率源输出信号在10kHz频偏处相位噪声-107dBc/Hz。采用0.18μmSiGe BiCMOS工艺,设计了整块芯片,着重优化了PFD-CP模块的输入噪声,经过spectre仿真,PFD-CP模块的输入噪声为-146dBc/Hz,经过实测,输出信号在10kHz频偏处相位噪声为-108dBc/Hz,达到设计预期。     

A 1-V 24-GHz 17.5-mW phase-locked loop in a 0.18-/spl mu/m CMOS process

A 1-V 24-GHz 17.5-mW fully integrated phase-locked loop employing a transformer-feedback voltage-controlled oscillator and a stacked divide-by-2 frequency divider for low voltage and low power is presented. Implemented in a 0.18-/spl mu/m CMOS process and operated at 24 GHz with a 1-V supply, the PLL measures in-band phase noise of -106.3 dBc at a frequency offset of 100 kHz and out-of-band phase noise of -119.1 dBc/Hz at a frequency offset of 10 MHz. The PLL dissipates 17.5 mW and occupies a core area of 0.55 mm/sup 2/.     

基于高次谐波体声波谐振器的微波振荡器设计

基于高次谐波体声波谐振器(HBAR)的高品质因数(Q)值和多模谐振特性,设计了Colpitts和Pierce两种形式的微波振荡器。采用HBAR与LC元件组成谐振回路的方法,与放大电路构成反馈环路直接基频输出微波频段信号。Colpitts振荡器输出信号频率为980 MHz,信号输出功率为-4.92dBm,信号相位噪声达-119.64dBc/Hz@10kHz;Pierce振荡电路输出信号频率达到2.962GHz,信号输出功率为-9.77dBm,信号相位噪声达-112.30dBc/Hz@10kHz。     

Ultra low phase noise sapphire-SiGe HBT oscillator

A state of the art C-band oscillator is presented. It is based on a high Q WGM sapphire resonator combined with a low residual phase noise SiGe HBT amplifier. A two oscillator experiment performed on this system has revealed a phase noise level of -133 dBc/Hz at 1 kHz offset from the 4.85 GHz carrier, which is the best published phase noise result for a single loop, free running microwave oscillator     

A Ka-band micromachined low-phase-noise oscillator

A low-phase-noise 28.65 GHz oscillator has been demonstrated using a planar resonator. The resonator is micromachined close to the transistor and has an unloaded Q of 460. The oscillator uses a commercially available high electron mobility transistor (HEMT) for the active device, and results in an output power of 0.6 dBm with a 5.7% DC-RF efficiency. The measured phase noise is -92 dBc/Hz at a 100 kHz offset frequency and -122 dBc/Hz at 1 MHz offset frequency. This is compared with a low-Q planar design showing a 10 dB improvement in phase noise. The micromachined resonator is competitive with other hybrid nonplanar technologies, such as dielectric resonators     

A low-phase-noise digitally controlled crystal oscillator for DVB TV tuners

This paper presents a 25-MHz fully-integrated digitally controlled crystal oscillator(DCXO) with automatic amplitude control(AAC).The DCXO is based on Colpitts topology for one-pin solution.The AAC circuit is introduced to optimize the phase noise performance.The automatic frequency control is realized by a 10-bit thermometer-code segmental tapered MOS capacitor array,ensuring a～35 ppm tuning range and～0.04 ppm frequency step.The measured phase noise results are-139 dBc/Hz at 1 kHz and-151 dBc/Hz at 10 k...     

X波段介质谐振器振荡器和缓冲放大器的研究

微波振荡器代表所有基本微波通信系统的能源来源。研究设计8．95GHz的低噪声砷化镓场效应管并联反馈介质谐振器振荡器,为了放大输出功率和提高负载牵引,在介质谐振器振荡器后一级加缓冲放大器,最终的输出功率是＋13．33dBm。测试证明输出信号的相位噪声偏离中心频率100kHz可达-116．49dBc／Hz,偏离中心频率10kHz可达-91．74dBc／Hz。     

A 1.8-GHz CMOS fractional-N frequency synthesizer with randomized multiphase VCO

A 1.8 GHz fractional-N frequency synthesizer implemented in 0.6 /spl mu/m CMOS with an on-chip multiphase voltage-controlled oscillator (VCO) exhibits no spurs resulting from phase interpolation. The proposed architecture randomly selects output phases of a multiphase VCO for fractional frequency division to eliminate spurious tones. Measured phase noise at 1.715 GHz is lower than -80 dBc/Hz within a 20 kHz loop bandwidth and -118 dBc/Hz at 1 MHz offset with no fractional spurs above -70 dBc/Hz. The synthesizer has a frequency resolution step smaller than 10 Hz. The chip consumes 52 mW at 3.3 V and occupies 3.7 mm/spl times/2.9 mm.     

K波段推-推介质振荡器设计

为了满足现代通信系统对于高频率与高稳定性信号源的需求,提出一种K波段介质振荡器。该振荡器通过推-推结构将两路子振荡器合二为一,使其能够在一个电路中同时实现振荡器和倍频器。在介质谐振器的两条耦合微带线上增加变容二极管模块,通过改变变容二极管的偏置电压调整谐振器中传输信号的相位。变容二极管模块的加入能够有效降低有源器件不一致性对电路的影响,减少两个子振荡器在基频处对输出信号的干扰,同时让振荡器获得200 MHz左右的输出信号频率可调范围。测试结果表明:在输出频率为20.96 GHz时,输出功率约为-4.59 dBm,在10 kHz时达到-66.50 dBc/Hz的相位噪声,在100 kHz时达到-94.31 dBc/Hz的相位噪声,基波抑制度达到-25.42 dBc。     

Novel 53/106 GHz Dual-Band MMW LC Oscillator Implemented in SiGe BiCMOS Technology

In this Paper, we present a fully integrated millimeter wave LC voltage-controlled oscillator (VCO), which employs a novel topology, operating at dual-band frequency of 53.22 GHz-band and 106.44 GHz-band. The low-phase noise performance of ?107.3 dBc/Hz and ?106.1 dBc/Hz at the offset frequency of 600 kHz, ?111.8 dBc/Hz and ?110.6 dBc/Hz at the offset frequency of 1 MHz around 53.22 GHz and 106.44 GHz are achieved using IBM BiCMOS-6HP technology, respectively. Two tuning ranges, of 52.7 - 53.8 GHz and 105.4 - 107.6 GHz for the proposed LC VCO are obtained. The output voltage swing of this VCO is around 1.8 V_p-p at the operation frequency of 53.22 GHz and 0.45 V_p-p at 106.44 GHz; the total power consumption is about 16.5 mW. To our knowledge, this is the first oscillator which operates at dual-band frequency above 50 GHz with the best preformance.