Propagation properties of ferromagnetic insulator guide

In order to realize new ferrite planar devices for applications at millimeter-wavelength frequencies, the authors have developed nonreciprocal ferrite devices schemes for incorporating ferromagnetic layers in dielectric insulator guide geometries. Their research program involves both the calculation and the measurement of device characteristics. For the calculation, a method of effective permeability, in which the permeability is a tensor, is introduced to characterize the ferrite material. The propagation properties of the insular guide are calculated by using a single-mode approach. The calculated results for dispersion, dielectric, and conductivity losses show resonant behavior with the application of a magnetic bias field for a guide configuration in which the ferrite replaces the insular dielectric. Ferrite phase shifters, filters, isolators, and circulators are potential applications of this guide configuration. For the experimental part of the study, wave dispersion and attenuation were measured in a purely dielectric insular guide from 26.5 to 40GHz. In addition to these experiments wave attenuation was measured as a function of magnetic bias field for the case where a hexagonal ferrite platelet was mounted on the ground plane near the insulator guide. General agreement is found between calculated and measured attenuation     

The properties of some metal-InSb surface barrier diodes

Metal-semiconductor surface barriers were formed by the vacuum evaporation of Au, Ag and Al onto n-type InSb. The current and capacitance curves of these devices were measured as a function of voltage at 77°K and analyzed in terms of existing theory. Surfaces etched in CP-4A followed by H100 and rinsed in 10^?5 M Na₂S formed inversion layers. Omission of the H100 step led to the formation of Schottky-type barriers.     

热处理时间对铁磁性微晶玻璃磁性能的影响

以Fe2O3-CaO-SiO2-B2O3-P2O5系统为基础,采用基础玻璃析晶法制备铁磁性微晶玻璃热种子材料。通过XRD,确定了热处理样品中的主晶相为磁铁矿、硅灰石和赤铁矿;采用振动样品磁强计(VSM),测试样品室温下的磁性能;通过SEM,观察样品中晶体的形貌。研究了热处理时间对其磁性能的影响。结果表明:合理的热处理时间为2h,制得的铁磁性微晶玻璃的比饱和磁矩为26.2A·m2·kg–1。     

Microstructure and barrier properties of reactively sputtered Ti-W nitride

The materials properties of Ti-W, sputter deposited in pure Ar, and Ti-W-N deposited in Ar-N₂ mixtures containing up to 50% N₂ have been reported. Films with N contents between 0 and 45 at.% have been produced. The W/Ti ratio in the nitrided alloy has been varied from that corresponding to pure W, to that of pure Ti. The metastable ter-nary phase diagram Ti-W-N was composed from data presented in this paper and lit-erature data. For low N contents (up to about 20 at.%) the film consists of a metastable solid solution of N in bcc Ti-W. For high N contents (from about 35 to 45 at.%). We observed the film to consist of an fcc ternary Ti-W nitride. The barrier performance was evaluated in an Al-Cu metallization to TiSi₂/Si contacts by Auger electron spectroscopy and junction leakage measurements. In clean sputtering environments, we need to cre-ate the ternary nitride to form a reliable barrier. Adding some N to “stuff” the grain boundaries of the bcc phase, or contaminating the Ti-W surface by an exposure to at-mosphere, was found to be less effective in producing a reliable barrier.     

Investigation of the properties of ferromagnetic ZnO:Cr2O3 nanocomposites

Present work focuses on the structural, optical and magnetic properties of ZnO:Cr₂O₃ nanocomposites. ZnO nanoparticles were synthesized and the structure was confirmed using powder x-ray diffraction. ZnO nanoparticles was grown in the hexagonal wurtzite structure with the preferential orientation along (101) plane. ZnO:Cr₂O₃ composites have been synthesized by doping different concentration of Cr₂O₃ (1, 3 and 5 wt%) into ZnO. The incorporation of Cr₂O₃ was confirmed using Fourier transformed infrared spectroscopy. UV–visible absorption spectra have been observed and interpreted for the determination of optical constants of ZnO:Cr₂O₃ composites. The optical constants like optical band gap, refractive index were determined and the effect of Cr₂O₃ on these constants was investigated. Relation between optical band gap and the refractive index were obtained. Magnetic studies using vibrating sample magnetometer reveal the ferromagnetism at 150 K in the composites with 3 and 5 wt% of Cr₂O₃.     

Breakdown and capacitance properties of hyperabrupt epitaxial Schottky barrier diodes

An analysis of the breakdown and capacitance properties of punch-through hyperabrupt epitaxial Schottky barrier diodes has been carried out. Results are given for the dependence of breakdown voltage of such a device on surface concentration and epitaxial layer thickness. Design curves are given for epitaxial hyperabrupt schottky varactor diodes. The design procedure yields an optimal impurity profile in which just-punch-through occurs at the highest voltage of operation. This gives a maximum dynamic range of operation still keeping the series resistance to a minimum. A corrected boundary condition to determine the profile constants associated with an n/n⁺ (high/low) junction is also given.     

Optical and barrier properties of thin-film encapsulations for transparent OLEDs

We investigate the optical and barrier properties of thin-film encapsulations (TFEs) for transparent organic light-emitting diodes (TOLEDs). To improve the barrier property of OLEDs, the number of dyads (Al₂O₃/polymer) and the thickness of polymer layer in the TFE structure are required to be increased. It is, however, demonstrated that a sharp dip appears in the transmittance of TFE films due to the interference of light caused by organic/inorganic multi-layered configuration, resulting in a dip in the top emission spectrum of TOLEDs. We have found that such a transmittance dip deepens when the number of dyads is large. What is worse, the number of transmittance dips and their sharpness are raised with increased thickness of the polymer layer. When the number of dyads is small, however, the effect of the polymer layer thickness on such a transmittance dip is weak. Therefore, we have addressed that the number of dyads needs to be reduced, but the thickness of the polymer layer should be increased to meet both optical and barrier properties of TOLEDs at the same time.     

Effect of hydrogenation on the properties of metal-GaAs Schottky barrier contacts

The effect of hydrogenation (incorporation of atomic hydrogen) on the properties of n-GaAs and the characteristics of Au-GaAs Schottky barrier contacts (the ideality factor of the current-voltage characteristic n, the barrier height ϕ _b, and the reverse voltage V _r at a current of 10 μA) has been investigated. The n-GaAs surface was bare (A-type samples) or was protected by an ultrathin (∼50 ?) layer of SiO₂ (B-type samples) during hydrogenation. It was shown that there was an optimal hydrogenation regime for the A-type samples (temperature range 150–250 °C and duration 5 min), for which n and V _r reached their minimum and maximum values, respectively. For the B-type samples, n and V _r improve starting from minimal durations and temperatures of hydrogenation and remain constant or even improve over the entire investigated range of temperatures (100–400 °C) and durations (1–50 min). The donor impurity passivation processes are roughly the same for the A-and B-type samples. Fiz. Tekh. Poluprovodn. 32, 1343–1348 (November 1998)     

Tunnel excess current in nondegenerate barrier (p-n and m-s) silicon-containing III–V structures

Data are scaled from a study of the forward current in three types of barrier structure: p-n homostructures p-n-GaP/n-Si, p-n-GaAs-n-GaP/n-Si, and p-n-GaAs-n-GaAs/n-Si; heterostructures n-GaP/p-Si, p-GaP/n-Si, n-GaAsP/p-Si, and n-GaAs/p-Si; and Au-n-GaP/ n-Si surface-barrier structures. Epitaxial layers of GaP and GaAs were created on Si-substrates by gaseous phase epitaxy in a chloride system. Temperature measurements show that the forward current has a tunnel character, although the width of the space charge region greatly exceeds the tunneling length. A model is proposed for nonuniform tunneling along dislocations that intersect the space charge region. This type of tunneling is taken into account by introducing a phenomenological “dilution” factor for the barrier. The model makes it possible to calculate the dislocation density in device structures from the current-voltage characteristic. Fiz. Tekh. Poluprovodn. 31, 216–222 (February 1997)     

Intermodulation properties of double- and triple-circuit parametric amplifiers with nonlinear barrier capacitance

There have been performed an experimental investigation of intermodulation effects in narrowband regenerative double- and triple-circuit parametric amplifiers (RDPA and RTPA) with nonlinear barrier capacitance. It has been obtained that their single-signal and double-signal intermodulation characteristics are of the conventional form, and their phase shifts in the vicinity of the resonance frequency are close to 90°, that is not enough for the compensation of nonlinear distortions in the case of amplifiers cascading. It has been demonstrated that the introduction of the additional oscillatory circuit at the double signal frequency into RDPA does allow effective compensation of the intermodulation interferences of odd order in the single-stage parametric amplifier.     

Investigation of electroless cobalt-phosphorous layer and its diffusion barrier properties of Pb-Sn solder

The capability of a cobalt-phosphorous [Co(P)] layer, which was grown via the electroless plating process, to serve as the diffusion barrier of lead-tin (PbSn) solder was investigated in this work. The Auger electron spectroscopy (AES) and energy dispersive spectrometry (EDX) indicated that the phosphorous contents in Co(P) films decrease with increasing film thickness and that the average contents are no less than 8.7 at.% for the specimens prepared in this work. X-ray diffraction in conjunction with composition analyses revealed that the electroless Co(P) layer was a mixture of amorphous and nanocrystalline structures; however, the AES depth profile and subsequent analyses indicated that the first-formed Co(P) layer should be amorphous because it contains as much as 18 at.% P. This implied a good barrier capability for electroless Co(P) because, as revealed by EDX line scan, the Sn and Cu atoms could not penetrate the Co(P) layer after the PbSn/Cu/Co(P)/Cu/Ti/Si sample was subjected to annealing at 250°C in a forming gas ambient for 24 h. The fact that Sn and Cu underlayers could not penetrate the Co layer after such a liquid-state annealing step was evidence that the Co(P) layer may simultaneously serve as a diffusion-barrier interlayer dielectric and as an under-bump metallization for flip-chip copper (Cu) ICs.     

Microwave characterization of the properties and performance of GaAs Schottky barrier mixer diodes

Microwave measurements have been made of the equivalent circuit parameters and performance characteristics of unpackaged GaAs Schottky barrier mixer diodes. The dependence of mixer performance on series inductance, junction capacitance, and series resistance is delineated. Performance of mixer diodes in packaged and unpackaged form is compared.     

High barrier properties of transparent thin-film encapsulations for top emission organic light-emitting diodes

This paper reported a low-temperature thin film encapsulation (TFE) process based on atomic layer deposition Al₂O₃ layer for top-emission organic light-emitting devices (TE-OLEDs). The barrier characteristics of both H₂O-based and O₃-based Al₂O₃ films were investigated. O₃-based Al₂O₃ TFE showed lower water vapor transmission rate (WVTR) of 8.7 × 10⁻⁶ g/m² day and longer continuous operation lifetime of 5 folds compared to the device with H₂O-based Al₂O₃ TFE under identical environmental and driving conditions. Furthermore, the extraction of emitting light of the devices with barrier layer was enhanced compared to the bared one. The theory simulation data were consistent with our experimental results and showed the potential for the design of TFE structures optimized for enhancing light transmission.     

Charge current polarization and magnetoresistance in ferromagnetic/organic semiconductor/ferromagnetic devices

Spin-polarized injection and transport in ferromagnetic/organic semiconductor/ferromagnetic devices are studied theoretically. Based on the spin diffusion theory and Ohm’s law, we obtain the charge current polarization and the magnetoresistance, which takes into account the special carriers in organic semiconductors. From the calculation, it is found that the charge current polarization decreases exponentially from the ferromagnetic layer into the organic layer and polarons are effective spin carriers in organic semiconductors for polarized charge current. To get an apparent magnetoresistance in an organic device, it is better to adopt a spin-dependent interface, and the thickness of the organic interlayer is much smaller than the spin diffusion length. Spin polarons are effective carriers for gaining remarkable magnetoresistance in ferromagnetic/organic semiconductor/ferromagnetic devices.     

Patch antennas on ferromagnetic substrates

Patch antennas on ferrite substrates allow for pattern control, frequency shifting, and scattering reduction. This is achieved by external magnetic field biasing coupled with the inherent magnetization of the ferrite substrate. Measurements and analytical studies based on the method of moments (MoM) have verified these attractive properties of ferrite substrates. However, verification of the analysis is difficult and, furthermore, previous models have relied on uniform biasing across the substrate. We present a hybrid finite element-boundary integral (FE-BI) method, which permits modeling of the true nonuniform bias fields within the substrate for a more accurate prediction of the ferrite patch performance. After validation of the proposed simulation and a demonstration of the inherent properties of the ferrite patch, it is shown that nonuniform biasing is responsible for additional frequency shifts. We also identify the poor condition of the resulting matrix systems and relate this situation to the predictable occurrence of nonpropagating substrate modes. A more robust iterative solver with preconditioning is, therefore, proposed and applied to handle these situations     

sd-Exchange emission in ferromagnetic junctions

The spin-injection emission in a ferromagnetic junction at terahertz frequencies is theoretically analyzed. It is demonstrated that the efficiency of the emission caused by the sd-exchange interaction of the injected spin in which the electromagnetic field is involved strongly depends on the orientation angle of the magnetization of the active region relative to the magnetization direction of the injecting region. The fact that the calculated radiation frequency and power are close to the experimental results shows that the sd-exchange emission must be taken into account in the interpretation of the observed terahertz emission in magnetic junctions.     

Sandwich-type ferromagnetic RF integrated inductor

The first demonstration of a sandwich-type ferromagnetic RF integrated spiral inductor for the 2-GHz range is reported. Two ferromagnetic CoNbZr films were set to sandwich the spiral in order to enhance the amount of magnetic flux linkage across the coil current. The stresses given from the insulator to the ferromagnetic film were studied. The inductance L of 7.9 nH and the qualify factor Q of 12.7 were obtained for a 200 μm×400 μm size four-turn rectangular spiral at f=2 GHz. The inductance was better than that of an air core of the same coil size by 19%, and the Q was better by 23%. Comparison with the on-top magnetic film type was also discussed     

Shallow-donor lasers in uniaxially stressed silicon

The effects of the terahertz-stimulated emission of Group-V donors (phosphorus, antimony, arsenic, bismuth) in uniaxially stressed silicon, excited by CO₂ laser radiation are experimentally studied. It is shown that uniaxial compressive stress of the crystal along the [100] direction increases the gain and efficiency of stimulated radiation, significantly decreasing the threshold pump intensity. The donor frequencies are measured and active transitions are identified in stressed silicon. The dependence of the residual population of active donor states on the uniaxial compressive stress along the [100] direction is theoretically estimated.     

Prioritized resource allocation for stressed networks

Overloads that occur during times of network stress result in blocked access to all users, independent of importance. These overloads can occur because of degraded resource availability or abnormally high demand. Public broadband networks must dynamically recognize some multimedia connections as having greater importance than others and allocate resources accordingly. A new approach to connection admission control is proposed that uses an upper limit policy to optimize the admission of connections based on the weighted sum of blocking across traffic classes. This results in a simple algorithm suitable for multimedia and packet networks. This work is also the first to demonstrate that the use of an upper limit policy is superior to traditional approaches of adding extra capacity or partitioning capacity, both in terms of the amount of resources required and sensitivity to load variations. An upper limit policy can also be deployed much faster when a large overload occurs from a disaster event     

Investigation and modeling of stressed thermal oxides

A comprehensive picture of SiO₂ degradation after electrical stress is proposed, starting from a kinetics model of defect creation. Two different techniques have been used to monitor changes in oxides: (1) a current–voltage technique (I–V) focused on the investigation of the stress induced leakage current in MOS capacitors, and (2) a frequency-resolved capacitance technique. The value of defect density (N) yielded by the kinetics model has been used as the input of a trap assisted tunnel (TAT) model and gave low-field current curves which fit experiments remarkably good. The same value of N has been also used in a model of differential capacitance and gave excellent fits of low-frequency capacitance data, involving tunnel in slow traps located at the silicon interface. Dependence of the low-field current and low-frequency capacitance on the stress conditions were also modeled. Therefore, the kinetics model of defect creation used in conjunction with TAT model at low-fields and low-frequency capacitance gives an overall comprehension of stress induced changes in thermal oxides.