8″×8″全色飞机座舱显示器

有源矩阵液晶显示器(AMLCD)是航空和航天应用中优选的平板显示器。本文介绍一种为军用飞机设计的8″×8″全色AMLCD。在讨论其性能特点的同时还介绍了有源矩阵技术。     

TFT AMLCD视频系统驱动电路

介绍了TFT AMLCD视频系统的构成和驱动方式，具体分析了有源矩阵液晶显示的模拟驱动电路，以及其中参数的选择和需要注意的问题。     

用非晶硅薄膜晶体管寻址的有源矩阵液晶显示的视频特性

引言近来,平板显示有源矩阵液晶显示(LCD)得到广泛的开发。各种类型的有源矩阵液晶显示已有报导。我们已报导过可用激光再结晶的多晶硅来获得重复性和一致性好的薄膜晶体管(TFT)。然而,由于激光再结晶TFT是用某些高温过程的大规模集成工艺制作的,而且,在大规模集成工艺设备中存在某些尺寸限制,使得激光再结晶多晶硅TFT阵列不适用于大面积显示。另一方面,非晶硅TFT目前普遍用作有源矩阵LCD中的开关管。最近,我们已经制成由非晶硅TFT组成的,对角线尺寸为5英寸和10英寸的有源矩阵LCD。     

采用新技术制备16灰度级10英寸TFT——LCDs

一、引言显示面积大并具有多个灰度级的有源矩阵TFT—LCDs已得到广泛地发展。我们制做了10英寸对角线16个灰度级(4096种颜色)的a—Si TFT—LCDs,矩阵分辨率高达480(V)×640×33(H)个象素。由于a—Si TFT矩阵的制备技术是实现高性能TFT—LCDs的重要因素之一,本文主要介绍一种制备a—Si TFT矩阵的新技     

新型有源液晶显示板

美国加利福尼亚州的一家公司出售一种有源矩阵平板显示器,它用非晶硅薄膜晶体管(TFT)作为开关元件。应用有源开关TFT矩阵,可提高显示速度。这     

三星和夏普分别展示22英寸和28英寸TFT LCD

在最近举行的LCD国际展览会上,韩国三星电于公司展示了一种22英寸薄膜晶体管(TFT)有源矩阵显示器,而日本夏普公司则展示了一种28英寸TFT液晶显示器(LCD).据夏普公司说,28英寸LCD是世界上最大的TFT LCD.其应用范围有PC监视器、壁挂电视和演示板.夏普在TFT有源矩阵技术方面处于领先地位,而三星则是新参与LCD的研制开发,并决心与日本公司一争高低.三星的22英寸TFT LCD样品是该公司正在开发的30英寸TFT LCD的     

彩色LCD组件

日本夏普电子公司生产的两种高分辨率超紧凑型彩色LCD组件是采用TFT有源矩阵专利技术,3inLQ323Y09和4inLQ424Y01均可跟高性能CRT监视器的质量相媲美。这四种组件均采用有源矩阵驱动系统,TFT材料为a-Si。LQ323Y09有92160个像素,其尺寸为94.2(宽)mm×78.5(高)mm×6.1(深)     

其它电路与技术

0603638 TFT-OLED像素单元电路及驱动系统分析[刊,中]／朱儒晖／／中国集成电路．-2005,(11)．-70-76(G) 本文基于TFT-OLED有源矩阵像素单元电路,着重分析了两管TFT结构、三管TFT结构、四管TFT 结构及多管TFT结构的电压控制型与电流控制型像     

驱动视频TFT—LCD的CMOS集成电路

北京大学微电子所于1991年4月在国内首次研制成功了用于驱动薄膜晶体管(TFT)有源矩阵液晶电视显示屏的专用GMOS集成电路。它包括栅驱动器——扫描电极总线驱动电路BDD1001和漏驱动器——信号电极总线驱动电路BDD2001两块IC。适合于驱动200线左右的TFT有源矩阵液晶电视显示屏。 用于TFT有源矩阵液晶电视显示屏的专用IC的具体结构参数、性能要求是由矩阵驱动方式、扫描方法、液晶材料的性质及电光特性、TFT的性     

自动在线检查和修复技术将提高LCD生产率

衣袋式电视、高清晰度电视、个人膝上计算机和工作站均得益于有源矩阵液晶显示(AMLCD)屏的高信息容量。AMLCD 比以前的直接多路驱动的简单矩阵液晶显示器更明亮,对比度更高、响应速度更快。然而,具有这些优点的结构却会引起高金属化缺陷率,而且     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.