ZEP520正性电子抗蚀剂的工艺研究

详细研究了ZEP520在Si衬底上的对比度、灵敏度、分辨率，并分析了曝光剂量、抗蚀剂厚度对ZEP520线条和圆孔尺寸的影响；同时还初步研究了ZEP520在GaAs衬底上的曝光工艺。实验结果表明，ZEP520的灵敏度远高于PMMA，在Si和GaAs上用ZEP520能分别制作出100nm和130nm宽的细线条，通过预烘GaAs衬底，可以消除ZEP520中的裂纹，因此用ZEP520制作器件或电路中各种细小凹槽图形是十分有利的。     

CdTe-HgCdTe叠层太阳电池CdS窗口层透射光谱性能研究

CdS窗口层光谱透射率的提高对CdTe-HgCdTe叠层太阳电池有效利用入射太阳光并增大电池的短路电流密度有重要的影响。通过研究化学水浴法、近空间升华法和磁控溅射法制备的CdS薄膜在CdCl2退火前后的光谱平均透过率和短路电流密度损失表明:在光谱区520~820 nm,化学水浴法制备的CdS薄膜在退火前后具有最高的光谱平均透过率,对应的CdTe顶电池有最小的短路电流密度损失;在光谱区820~1150和520~1150 nm,磁控溅射法制备的CdS薄膜在退火前后均具有最高的光谱平均透过率,对应的HgCdTe底电池和CdTe-HgCdTe叠层太阳电池有最小的短路电流密度损失。在光谱区520~820、820~1150和520~1150 nm,CdCl2退火可以显著增大CdS薄膜的光谱平均透过率,降低对应CdTe顶电池、HgCdTe底电池和CdTe-HgCdTe叠层电池的短路电流密度损失。     

High-power diode pumped upconversion fibre laser in red and green spectral range

A praseodymium-ytterbium-doped multimode upconversion ZBLAN fibre laser pumped with high brightness multimode diodes at 850 nm is demonstrated. With a pump power of 6.5 W, an output power >2 W at 635 nm and 0.3 W at 520 nm has been achieved.     

Dual frequency microstrip rectangular patches

A dual frequency microstrip rectangular patch antenna resonating at frequencies 520 MHz and 2.5 GHz is presented. This antenna incorporates a matching structure to improve the impedance characteristic at one resonance frequency and uses symmetrically positioned varactor diodes to control resonance at a lower frequency. The use of varactor diodes also provides the benefit of a broad tuning range at the lower resonance frequency. A tuning range of 32% at 520 MHz was measured.<>     

Multiple UHF frequency generation using acoustic surface-wave filters

A new technique of using acoustic surface-wave filters for multiple UHF frequency generation has been demonstated. The 21 contiguous surface-wave filters, which are spaced 5.3 MHz apart from 520 to 650 MHz, occupy an area of 2 cm × 0.9 cm, and no multipliers or mixers are required.     

Ultralow specific on resistance UMOSFET with trench contacts for source and body regions realised by selfaligned process

An ultralow on resistance power UMOSFET having a refined contact structure has been fabricated by a selfaligned process. The most important feature of this UMOSFET is its great increment of channel width per unit area, which leads to a noticeable reduction in the on resistance. A 50 V UMOSFET with a specific on resistance of 0.58 m Omega cm/sup 2/ has been achieved despite employing a relatively thick (520 mu m) substrate with a resistivity of 8 m Omega cm.<>     

列阵半导体激光端面抽运Nd∶YVO4绿光激光器的研究

报道了采用列阵半导体激光端面抽运Nd∶YVO4晶体的KTP腔内倍频绿光激光器。采用多柱透镜法 ,对列阵半导体激光进行了有效整形 ,并利用谐振腔折叠产生的像散 ,实现了抽运光与振荡光较好的模式匹配 ;由于是直接耦合抽运 ,因此保证了半导体抽运光以π偏振光入射Nd∶YVO4(单轴 )晶体 ,实现了半导体抽运光与Nd∶YVO4吸收的偏振匹配。在抽运功率为 9 5W时 ,得到 5 2 0mW的稳定绿光输出 ,光 光转换效率为 5 5 %。     

基于Xilinx PCI Express Core的高速DMA读写设计

本设计在基于Xilinx Virtex-6 FPGA内嵌PCI Express Core的基础上,实现了由PCI Express板卡主动发起的DMA读写,可完成PC和PCI Express板卡之间数据的高速传输。该设计已经在Xilinx评估板ML605上完成调试验证,DMA写内存速度稳定可达1 520 MB/s,满足了高速存储系统的要求。     

InGaN/AlGaN双异质结绿光发光二极管

报道了用 LP- MOVPE技术在蓝宝石 ( α- Al2 O3)衬底上生长出以双掺 Zn和 Si的 In Ga N为有源区的绿光 In Ga N/Al Ga N双异质结结构 ,并研制成功发射波长为 52 0— 540 nm的绿光LED.     

A defect-tolerant design for full-wafer memory LSI

Automatic defect-tolerant techniques are described for the realization of full-wafer LSI. These techniques, which are based on duplication redundancy, feature automatic inspection, detection, shift, and selection. Using these techniques, a 1.5-Mb frame static memory on a 4-in. silicon wafer (512/spl times/512 dot plane, 64 color) has been realized. The device has been fabricated using n-well CMOS technology with double-level polysilicon, double-level aluminum, and photolithography of 3-/spl mu/m dimensions. It provides typical access time of 520 ns and operating power of 5.8 W.     

A Unique 520–590 GHz Biased Subharmonically-Pumped Schottky Mixer

We report on the design and performance of a novel broadband, biased, subharmonic 520-590 GHz fix-tuned frequency mixer that utilizes planar Schottky diodes. The suspended stripline circuit is fabricated on a GaAs membrane mounted in a split waveguide block. The chip is supported by thick beam leads that are also used to provide precise radio frequency (RF) grounding, RF coupling and dc/intermediate frequency connections. At room temperature, the mixer has a measured double sideband noise temperature of 3000 to 4000 K across the design band.     

光合作用PSⅡ Chl分子传能超快光谱学

利用ICCD皮秒，飞秒扫描成像和飞秒时间分辨光谱装置实验研究了高等植物捕光天线LHCⅡ三聚体和PSⅡ聚粒复合物及PSⅡ核心复合物的超快光谱动力学。经过吸收光谱和发射光谱分析。确定在LHCⅡ三聚体中至少存在7种Chl分子光谱特性，它们是：Chlb653/656^658.7，Chla662.0^665.2,Chla/b670/671^671.6,Chla675.0^677.1,Chla680/681^682.9,Chla685^689.1和Chla695.0^695.6。采用光强10^13光子/cm^2/脉冲激励浓度为30μg/ml的捕光天线LHCⅡ三聚体，在650nm到705nm谱段逐点探测分析处理，产生了两组短寿命组分210fs,520fs和5.2ps,36.7ps及两个长寿命组分1.8ns,2ns。最快的三个寿命210fs,520fs和5.2ps反映了三聚体Chlb分子向Chla分子的激发能传递过程；寿命36.7ps反映了Chla分子向相邻单体Chla分子的激发能传递过程；最长的两个寿命1.8ns和2ns是在三聚体中Chla分子通过中间体Chla分子辐射荧光，分别跃迁回基态的过程，获得的六个寿命组分有把激发能传递时间与Chla/b分子发射光谱相结合的特点，经拟合处理解析PSⅡ颗粒复合物光谱，得到三个组分谱，其峰值分别为686.8nm,692.2nm和694.9nm，与LHCⅡ比较分析，说明天然构型的PSⅡ有很强的吸收光能和有效传递光能的本领，PSⅡ核心复合物的核心天线CP43和CP47，各自含有三种不同状态的Chla分子，CP43有Chla660^661,Chla669^670,Chla682^686,CP47有Chla660^661,Chla669^670,Chla680^681。     

BB-520型全息介质的线性处理技术和工艺研究

全息介质的线性处理对全息图的记录和再现有直接影响 ,通过对曝光量、处理液温度、处理液浓度等对记录介质黑密度影响的研究 ,形成了相对稳定的BB -5 2 0型全息记录介质的线性处理工艺 ,该处理工艺在动态粒子场的全息测试中得到了较好的应用。     

120-nm gate-length In0.7Ga0.3As/In0.52Al0.48As InP-based HEMT

120 nm gate-length In_(0.7)Ga_(0.3)As/In_(0.52)Al_(0.48) As InP-based high electron mobility transitions(HEMTs) are fabricated by a new T-shaped gate electron beam lithograph(EBL) technology,which is achieved by the use of a PMMA/PMGI/ZEP520/PMGI four-layer photoresistor stack.These devices also demonstrate excellent DC and RF characteristics:the transconductance,maximum saturation drain-to-source current,threshold voltage,maximum current gain frequency,and maximum power-gain cutoff frequency of InGaAs/I...     

High-speed divide-by-4/5 counter for a dual-modulus prescaler

A new high-speed divide-by-4/5 counter is developed. Based on this divide-by-4/5 counter, a 3 V 2 M ~1.1 GHz dual-modulus divide-by-128/129 prescaler fabricated with 0.6 μm CMOS technology is presented. Its maximum operating frequency of 1.11 GHz with power consumption of 19.2 mW has been measured at a 3 V supply voltage. In addition, for a power supply of 1.5 V, the circuit consumed 2.67 mW at a maximum input frequency of 520 MHz     

光泵S_2蓝-绿激光

由于 500nm左右的蓝－绿光谱区恰是“水下窗口”因此积极地探索与发展高效率、低阈值、宽蓝－绿谱区可调僧激光器已成为目前研制新型激光器的重要课题之一。      

氧分压对ZnO薄膜结构与光学性能的影响

采用直流磁控溅射法在不同氧分压下制备了ZnO薄膜.用原子力显微镜(AFM)、X射线衍射(XRD)仪、荧光分光光度计、紫外-可见分光光度计对样品进行检测.实验表明,氧分压对ZnO薄膜的结构与光学性能影响很大.在样品的光致发光谱中,均只发现了520 nm附近的绿色发光峰,该峰随着氧分压的增大而增强.不同氧分压制备的ZnO薄膜中,氧分压为0.25Pa的样品结晶性能最好,透过率最高.     

FV520(B)钢叶片模拟件激光再制造成形试验分析

针对鼓风机用FV520(B)钢叶片根部气蚀裂纹的激光再制造,采用正交化试验方法优化再制造工艺参数;通过分析FV520(B)钢叶片模拟件根部破损情况,制定激光扫描修复方案,观察和分析修复部位金相显微组织及物相组成,并对熔覆层硬度进行测试。试验结果表明:激光功率1.1 kW、扫描速度250 mm/min、送粉速率8.10 g/min及载气流量150 L/h为该再制造系统下该材料优化工艺参数;采用多种扫描路径相综合的修复方式,减少层间热累积效应,使修复件尺寸精度保持在0.8 mm之内;熔覆层和基体为良好的冶金结合,熔覆层表面显微硬度最高,平均值达到675 HV0.2,结合界面处硬度值达到610 HV0.2,具有较好的组织结构和硬度性能。     

RF power performance of an LDMOSFET on high-resistivity SOI

This paper describes the RF power performance of an LDMOSFET technology on high-resistivity silicon-on-insulator wafers. The technology has an on-state breakdown voltage of greater than 10 V, and an off-state breakdown voltage of greater than 20 V. This device technology is shown to have excellent RF power characteristics at frequencies from 1.9 to 5.8 GHz. At 1.9 GHz, a peak power-added efficiency (PAE) of 63% was achieved with an output power of up to 520 mW from a single RF power cell. At 5.8 GHz, a peak PAE of 35% was achieved with an output power of up to 125 mW from a single RF power cell.     

Comparative study of e-beam resist processes at different development temperature

The effect of development temperatures on the performance of three mostly used e-beam resists, ZEP-520, HSQ and SAL-601 have been investigated. For the positive resist ZEP-520, the contrast increases significantly, but the sensitivity decreases, with the decreasing of the development temperature. On the other hand, the negative resist HSQ whose sensitivity decreases dramatically, but the contrast increases, with the increase of developer temperature. Unlike the negative resist HSQ, the sensitivity of the negative chemically amplified resist SAL-601 enhances with the increase of the developer temperature and the contrast decreases. Using high contrast process, we have achieved high dense patterns with e-beam lithography at low electron energy.