共查询到16条相似文献,搜索用时 406 毫秒
1.
基于虚拟仪器的低频噪声自动测试系统设计 总被引:1,自引:0,他引:1
电子器件的低频噪声是表征其工作可靠性的敏感参数,基于虚拟仪器组建了一套低频噪声测试系统,由双通道低噪声前置放大器、PXI-4472数据采集卡和PC机构成.介绍了系统功能框图和软件设计,不仅能够测量光电耦合器的噪声功率谱,而且还能显示时域波形,并完成时域分析.运用LabVIEW软件对噪声进行快速准确的检测和分析,通过小波分析剔除爆裂噪声,自动完成测试数据存储、打印等功能,并给出了低频噪声功率谱测量结果和时域波形,为电子器件的可靠性诊断和筛选提供必要的依据. 相似文献
2.
光电耦合器中可俘获载流子的陷阱密度是影响其电流传输比(CTR)的重要因素,并与器件可靠性有密切关系.在器件内部的多种噪声中,1/f噪声可有效地表征器件陷阱密度.本文在研究光电耦合器工作原理以及1/f噪声理论的基础上,建立了光电耦合器的CTR表征模型和1/f噪声模型.在输入电流宽范围变化的条件下,测量了器件的电学噪声和CTR变化,实验结果验证了以上模型的正确性.将CTR模型与噪声模型相结合,得到了CTR与1/f噪声之间的关系.此关系应用于对光电耦合器辐照实验结果的分析,实验结果与理论得到的结论一致.理论与实验结果表明,噪声幅值越大,电流指数越接近于2,则器件的可靠性越差,相同工作条件下CTR的老化衰减量越大,其失效率显著增大.从而证明噪声可表征光电耦合器的CTR并能准确地反映器件的可靠性. 相似文献
3.
光电耦合器电流传输比的噪声表征 总被引:5,自引:0,他引:5
光电耦合器中可俘获载流子的陷阱密度是影响其电流传输比(CTR)的重要因素,并与器件可靠性有密切关系.在器件内部的多种噪声中,1/f噪声可有效地表征器件陷阱密度.本文在研究光电耦合器工作原理以及1/f噪声理论的基础上,建立了光电耦合器的CTR表征模型和1/f噪声模型.在输入电流宽范围变化的条件下,测量了器件的电学噪声和CTR变化,实验结果验证了以上模型的正确性.将CTR模型与噪声模型相结合,得到了CTR与1/f噪声之间的关系.此关系应用于对光电耦合器辐照实验结果的分析,实验结果与理论得到的结论一致.理论与实验结果表明,噪声幅值越大,电流指数越接近于2,则器件的可靠性越差,相同工作条件下CTR的老化衰减量越大,其失效率显著增大.从而证明噪声可表征光电耦合器的CTR并能准确地反映器件的可靠性. 相似文献
4.
5.
6.
在宽的输入偏置电流范围条件下,开展了光电耦合器件低频噪声特性测试与功率老化和高温老化的可靠性试验研究。结果表明,光电耦合器件的低频噪声主要是内部光敏晶体管1/f噪声,并随输入偏置电流的增大呈现先增大后减小的规律,这与器件的工作状态密切相关。功率老化试验后,高输入偏置电流条件下的低频噪声有所增大,这归因于电应力诱发的有源区缺陷。高温老化试验后,整个器件线性工作区条件下的低频噪声都明显增大,说明温度应力能够更多地激发器件内部的缺陷。相对于1/f噪声幅度参量,低频噪声宽带噪声电压参量可以更灵敏准确地进行器件可靠性表征。 相似文献
7.
8.
基于马氏距离的太阳能电池可靠性筛选方法研究 总被引:1,自引:1,他引:0
通过测量太阳能电池的内部低频噪声,可以快速、无损地实现太阳能电池的可靠性筛选分类。提出基于马氏距离的筛选方法分析噪声数据,进而得到全频段的噪声筛选判据。实验结果表明,本文方法和基于个别频率点的噪声分类方法相比,马氏距离筛选方法更加全面地反映了太阳能电池的整体低频噪声水平,不仅可以剔除1/f噪声大的太阳能电池,还可以剔除G-R(genera-tion-recombination)噪声和爆裂噪声大的太阳能电池,因此能将一批太阳能电池进行更为准确、精细的可靠性分类。 相似文献
9.
10.
11.
12.
测量噪声功率谱作为筛选光电耦合器件的方法研究(Ⅱ) 总被引:2,自引:0,他引:2
在文献「1」中作者曾提出用测量光电耦合器件噪声功能率谱的方法,筛选光电耦合器件。此 根据低频噪声的幅值。但在实验中发现,由于1/f、g-r和爆裂噪声三者之间相关性较弱,在剔除掉1/f噪声值较大的器件后,g-r噪声和爆裂噪声较大的器件却可能未被易除。 相似文献
13.
14.
Yong Xu Takeo Minari Kazuhito Tsukagoshi Jan Chroboczek Francis Balestra Gerard Ghibaudo 《Solid-state electronics》2011,61(1):106-110
Measurements of power spectral density (PSD) of low-frequency noise (LFN) in pentacene field-effect transistors reveal the preponderance of a 1/f-type PSD behavior with the amplitude varying as the squared transistor gain and increasing as the inverse of the gate surface area. Such features impose an interpretation of LFN by carrier number fluctuations model involving capture/release of charges on traps uniformly distributed over the gate surface. The surface slow trap density extracted by the noise analysis is close to the surface states density deduced independently from static I(V) data, which confirms the validity of the proposed LFN interpretation. Further, we found that the trap densities in bottom-contact (BC) devices were higher than in their top-contact (TC) counterparts, in agreement with observations of a poorer crystal structure of BC devices, in the contact regions in particular. At the highest bias the noise originating from the contact resistance is also shown to be a dominant component in the PSD, and it is well explained by the noise originating from a gate-voltage dependent contact resistance. A gate area scaling was also performed, and the good scaling and the dispersion at the highest bias confirm the validity of the applied carrier number fluctuations model and the predominant contact noise at high current intensities. 相似文献
15.
In this paper the theoretical analysis of noise sources in Optoelectronic Coupled Devices (OCDs) is given and the relation between typical defects and 1/f, g–r and burst noise is described. According to statistical and experimental results, a threshold to screen potential devices with excess noise is derived, which has been proved theoretically that the screening criterion is reasonable. Moreover, the experimental results show that the method is of practical value. 相似文献
16.
Yisong Dai 《Microelectronics Reliability》1996,36(5):621-625
It has been reported that after a lifetest not all rejected devices initially exhibit an excess low frequency noise, so that the regular noise criterion using initial noise level measured before a lifetest is insufficient in the industrial application to reliability screening. An improved method used for initial discarding of faulty bipolar junction transistors on the basis of the initial noise before the lifetest and the noise variation after the conventional reliability screening test has been suggested [Yisong Dai, Microelectron. Reliab. 33, 2207–2215 (1993)]. In this paper we report the theoretical analysis and experimental results, which demonstrate that this refined approach is more effective for reliability screening of devices exhibiting long-term parameter drift failure. 相似文献