一种窄带高消光比的可调谐聚合物微环谐振器的仿真分析

基于耦合模理论、微环谐振理论和电光调制理论, 提出了一种可由电光调谐并带有两段U 型波导的微环谐振器,通过仿真结果讨论了输出光谱、U型波导长度和耦合系数等参数的变 化关 系。仿真结果证明,相比较于其他报道过的带有U型波导的微环谐振器,本文所提出的微环 谐振器 在耦合系数取0.1时,实现了60dB以上的极高 消光和极窄的带宽,同时自由光谱范围(FSR)可 达到56nm。通过改变加载在微环和U型波导上的电压,可以分别实现 波长和消光比的调谐。     

可调谐氮化硅波导微环谐振腔滤波器研究

设计并制备了一种基于热光效应的集成可调谐氮化 硅(Si₃N₄)波导微环谐振腔滤波器,通过采用马赫-曾德干涉仪(MZI)构成的可调谐 耦合器控制耦合区耦合比,以实现滤波器消光比的调谐。设计并优化了微环谐振 腔的波导截面尺寸、弯曲半径和耦合区波导间隔等参数,并通过光刻、反应离子刻蚀(RIE )等工艺制备 了两种不同弯曲半径的Si₃N₄波导微环谐振腔。实验结果表明,本文器件在波长1550nm附近处的自由光谱 范围(FSR)为68pm,3dB带宽约为16pm,品质因子Q达到了9.68×10 4,消光比可调范围约为17dB。     

SOI基微环谐振可调谐滤波器

采用电子束光刻和ICP刻蚀等工艺制作出基于SOI纳米线波导微环谐振滤波器。滤波器微环半径为5μm左右,波导截面尺寸为(350nm～500nm)220nm不等。测试结果表明,波导宽度为450nm时器件性能最为理想,其自由频谱宽度为16.8nm,1.55μm波长附近的消光比为22.1dB。通过对微环滤波器进行热光调制,在21.4℃～60℃温度范围内实现了4.8nm波长范围的可调谐滤波特性,热光调谐效率达到0.12nm /℃。同时,研究了基于单环和双环的多通道上下载滤波器,实验结果表明多通道滤波器的信号传输存在串扰,主要是不同信道之间的串扰,尤其在信号上载时,会在相邻信道产生较大串扰。     

超窄带微环谐振滤波器的设计及传输特性分析

提出了一种基于双微环引起范诺共振效应实现超窄带滤波的微环谐振滤波器,通过泵浦波导和微加热装置使其同时具备有源和可调谐性能。通过耦合模理论,推导了该结构的透射率及超窄带带宽公式,并利用MATALAB软件模拟了在滤波器结构中注入增益对超窄带带宽和滤波器的透过率的影响,以及微环波导的热光效应对滤波器谐振波长的影响。仿真结果表明,在滤波器中注入增益能增大透过率,压缩滤波器的超窄带带宽,且微环波导的热光效应可使谐振波长发生红移或蓝移。     

1967～2033 nm波段硅基可调谐外腔半导体激光器设计与仿真

2μm波长附近可调谐半导体激光器在分子光谱学和光通信领域中有广阔的应用前景。基于绝缘体上硅（SOI）平台,对2μm波长附近可调谐半导体激光器的外腔部分进行了设计优化。分析了不同尺寸光波导的模式损耗特性、单个微环谐振腔受总线波导耦合间距的作用以及总线波导光反馈终端对外腔半导体激光器性能的影响。并提出了一种具有高工艺兼容度的多模环形光波导光反馈结构。所设计的可调谐半导体激光器硅基外腔可通过环形波导上的镍铬合金微加热器进行0.1 nm/K的高精度调谐,对单个微加热器施加3.2 V电压时,调谐范围可达66 nm(1967～2033 nm)。     

新型的可调谐微环谐振器的设计

为了改进微机电系统中的传感器应用范围和特性参数,采用微纳光纤制作了环形谐振腔结构,设计的结构具有尺寸小、损耗低,品质因素高等优点。理论上分析了微纳光纤的光传输模式特性,通过电场的传数矩阵推导了谐振腔中的速度变化与光强变化间的关系,得到了加速度作用下微环谐振腔的谐振波长、周长、有效折射率的变化值间的函数关系。仿真结果分析表明:设计的微环波导电场波动明显,耦合效率较好;光谱强度和3 dB带宽变化较小,Q值达到104;在质量块每增加10 g时,输出光谱图约向右漂移3 nm;加速度与谐振波长漂移量基本呈线性关系,可以通过谐振波长的漂移量来实现对加速度的测量。研究结果能够为全光网络和微机电系统提供实现多种功能的光波导器件。     

用纳米印刷技术制备微机械和微流体金属光栅器件

纳米印刷技术是一种制备大面积亚波长光栅的新技术。基于此光栅的滤光器具有光谱的特性。利用波长耦合分析法对光栅进行理论模拟,此模拟允许反射率取最大和最小值：利用微电子机械系统（MEMS）制备微流体和微机械光栅,这些光栅是制备可调滤光器和其他可选择波长器件的基本元件。这些可调器件通过改变光栅表面的折射率实现波长的选择。如果在光栅表面附着一层水膜。光栅共振波长可改变33％;如果在光栅表面覆盖石英。则共振波长从558nm改变到879nm,波长改变率高达58％。此外,大约有3种因素可改变单一波长的折射率。这些光栅器件在可调滤光器或光调节器方面有着重要的应用价值。     

高品质因子聚合物可重构微环谐振腔滤波器

以聚合物ZPU-44和聚砜(PSU,polysulfone risi n)分别作为波导包层和芯层材料,采用倒脊形波导结构,设计并 优化了聚合物可重构微环谐振腔滤波器的波导截面参数、弯曲半径、耦合区波导长度和间距 以及调谐电极 等结构参数,分析了其谐振滤波特性。采用传统的微加工工艺制备了聚合物可重构微环谐振 腔滤波器并进 行了测试。结果表明,其在通信波段1550nm附 近的自由光谱范围(FSR)为0.15nm,3dB带宽约为0.0235nm, 品质因子Q达6.60×10⁴,在0~ 4V电压范围内实现了0.5~12.95dB消光比的调谐,且 谐振波长调谐一 个FSR的电压为4.75V,与理论设计基本 相 符。本文的聚合物可重构微环谐振腔滤波器可用于集成波导可调谐光延时线和可调谐滤波。     

聚合物双环谐振滤波器的研究

设计了一种基于多模干涉(MMI)耦合输入/输出结构的跑道型双微环串联谐振滤波器,并采用紫外光敏聚合物材料SU-8作波导芯层,聚合物CYTOP为下包层,在硅基底上完成了器件的制备.器件的波导端面尺寸为2 μm×1 μm,与设计值相符,扫描电镜显示所制备的器件波导侧壁陡直度较高.直波导传输损耗的测试结果表明,在1550 nm波长,直波导传输损耗约为2.0 dB/cm.测试并获得了多模干涉结构和器件的通光及输出光谱图\.测试结果表明,MMI结构在较宽的波长范围内实现了接近50∶50的功分比,微环谐振滤波器的通光性能良好,实现了滤波功能,器件的自由光谱区FSR实际值约为0.94 nm,与设计参数值很接近.研究结果表明采用聚合物SU-8制备小波导尺寸微环谐振器的器件简便可行.     

基于氮化镓的导模共振滤波器仿真分析

根据严格耦合波理论和等效介质理论,提出了针对C波段、基于半导体材料氮化镓的亚波长导模共振滤波器结构及设计方法。详细探讨了在强调制光栅的高占空比作用下,光栅周期和入射波角度对滤波器反射谱共振波长的影响。在保持滤波效果为高衍射率(共振波长峰值反射率达到99.5%以上)、低旁带和窄线宽的条件下,利用其对入射波角度的敏感性,结合仿真数值提出了一种通过 MEMS(微机电系统)平面反射镜调谐入射角角度(0~4.07°),从而线性地控制共振波长输出(调谐范围为36 nm),实现峰值半宽高低于0.8 nm的C波段可调滤波器。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.     

Diode-end-pumped Nd:YVO4/LBO lasers with 4.2W continuous-wave output at 457 nm

A continuous-wave (CW) 457 nm blue laser operating at the power of 4.2 W is demonstrated by using a fiber coupled laser diode module pumped Nd: YVO4 and using LBO as the intra-cavity SHG crystal With the optimization of laser cavity and crystal parameters, the laser operates at a very high efficiency. When the pumping power is about 31 W, the output at 457nm reaches 4.2 W, and the optical to optical conversion efficiency is about 13.5% accordingly. The stability of the out putpower is better than 1.2% for 8 h continuously working.     

Call for Papers

正Wireless Body-area Networks The last decade has witnessed the convergence of three giant worlds:electronics,computer science and telecommunications.The next decade should follow this convergence in most of our activities with the generalization of sensor networks.In particular with the progress in medicine,people live longer and the aging of population will push the development of wireless personal networks     

Call for Papers—Feature Topic,Vol.12,No.7,2015

正Information Centric Networking Information-Centric Networking(ICN) is an emerging direction in Future Internet architecture research,gaining significant tractions among academia and industry.Aiming to replace the conventional host-to-host communication model by a data-centric model,ICN treats data content as the first