石墨烯掺杂和烧结温度对MgB<sub>2</sub>块体微观结构和超导性能的影响

我们采用未掺杂的粉末制备了MgB<sub>2</sub>块体作对比,研究了石墨烯掺杂对MgB<sub>2</sub>块材微观结构和超导性能的影响,研究了退火温度对石墨烯掺杂MgB<sub>2</sub>块材微观结构和超导性能的影响。对烧结后的样品采用XRD,SEM,SQUID进行了相组成,微观结构和超导性能等分析检测。研究发现石墨烯掺杂明显提高了MgB<sub>2</sub>超导材料的临界电流密度,在20 K和1 T磁场下,最大的临界电流密度达到1.8×10<sub>5</sub>A/cm<sub>2</sub>。     

等离子喷涂制备MoSi<sub>2</sub>-CoNiCrAlY复合涂层的高温氧化行为

以高能球磨法制备的纳米MoSi<sub>2</sub>-CoNiCrAlY复合粉末为喷涂材料,利用等离子喷涂技术在GH4169合金表面沉积了MoSi<sub>2</sub>-CoNiCrAlY复合涂层,并研究了GH4169基材和复合涂层合金试样在900°C静态大气环境下的循环氧化行为。结果表明：复合涂层表现出较好的抗高温氧化性能,其氧化速率仅为1.23×10<sub>-7</sub> mg<sub>2</sub>.cm<sub>-4</sub>.s<sub>-1</sub>,这归因于MoSi<sub>2</sub>在氧化早期形成了SiO<sub>2</sub>相,可以自封氧化膜。氧化后期SiO<sub>2</sub>的脱落,Mo<sub>5</sub>Si<sub>3</sub>相的再次氧化生成MoO<sub>3</sub>和MoO<sub>2</sub>气相,以及MoSi<sub>2</sub>的内氧化直接气化,会降低涂层的抗氧化性能。     

超声辅助对共沉淀法制备富锂锰基正极材料Li[Li_0.144Ni_0.136Co_0.136Mn_0.544]O₂性能影响的研究

通过超声辅助共沉淀法成功制备了富锂锰基正极电极材料,研究了不同的超声时间对材料形貌、结构和电化学性能的影响。研究发现,超声辅助能够使材料颗粒更加均匀,结构更合理,有利于材料电化学性能的提升。当合成前躯体材料超声时间为8h时,复合材料的放电比容量最好,在0.1C的初始放电比容量为327.8 mAh g_-1,均高于未超声的复合材料的265.2 mAh g_-1,1C下循环50圈后放电容量为181.6 mAh g_-1,保持率为84.8%。通过循环伏安法测试和电化学交流阻抗测试,发现超声后的复合材料还原氧化峰电流更大,电荷转移阻抗更小,具有较好的倍率性能。     

ZrB₂含量对Nb-Mo-ZrB₂复合材料氧化行为的影响

利用热压烧结法,在2400℃烧结温度下,制备了NbMo固溶体（此后记作(Nb,Mo)ss）基陶瓷颗粒增强复合材料。其中,ZrB2陶瓷增强相的体积分数分别为15%,30%,45%和60%。本文研究了在800℃,1000℃和1200℃下,ZrB2含量对复合材料抗氧化性和氧化产物演变的作用。试验结果表明,氧化温度和ZrB2含量均对复合材料的氧化行为有影响。从氧化速率常数角度讲,ZrB2-(Nb,Mo)ss复合材料的抗氧化性随ZrB2含量的增加而提高,随氧化温度的提高而降低。800℃-1000℃的氧化产物中含有膜状Nb2Zr6O17相,能作为屏障阻止氧气向基体扩散,因此在800℃-1000℃时,复合材料氧化速率较低。然而,在1200℃氧化时未发现Nb2Zr6O17相,MoO3的剧烈挥发和ZrO2的体积效应破坏了Nb2Zr6O17保护层,导致了氧化层严重剥落,材料的抗氧化性极差。综上,本文结合观察到的氧化产物形貌,详细阐述了不同ZrB2含量的复合材料在不同温度下的抗氧化机制。     

Zn_²⁺掺杂对共沉淀法制备Ce:Gd₃Ga₃Al₂O₁₂陶瓷粉体闪烁性能的影响

本文利用化学共沉淀法制备Zn_²⁺共掺的Ce:GAGG陶瓷粉体。研究了Zn_²⁺共掺的Ce:GAGG陶瓷前驱粉体的TG/DTA和FTIR曲线;分析了不同煅烧温度对Ce:GAGG陶瓷粉体相、形貌和颗粒度分布的影响;系统研究了Zn_²⁺含量对Ce:GAGG陶瓷粉体光致发光,辐射发光,激发光谱和荧光寿命的影响。研究表明：前驱粉体在883℃的相组成为GdAlO₃相和GAGG相;前驱粉体在煅烧温度为900℃时,完全转化为GAGG相;当煅烧温度为1200℃时,GAGG颗粒尺寸控制在20nm~60nm,分布均匀;随着 Zn_²⁺含量的变化,光致发光和辐射发光强度也相应变化,特别的,当Zn_²⁺含量为0.4mol%时,光致发光和辐射发光强度达到最大值;随着Zn_²⁺掺杂含量的上升,荧光寿命出现下降的趋势。因此,Zn_²⁺含量对Ce:GAGG陶瓷粉体的辐射发光具有明显的影响,对降低荧光寿命具有积极的作用,对于提高GAGG闪烁材料的快速响应具有重要意义。     

TiAl合金表面阴极微弧沉积Al<sub>2</sub>O<sub>3</sub>陶瓷涂层的生长过程与相组成

目的：利用阴极微弧沉积技术在预处理后的TiAl合金表面制备了Al<sub>2</sub>O<sub>3</sub>陶瓷涂层,研究了涂层的生长过程和相组成。方法：采用电子扫描电镜(SEM、EDS)、电子透射电镜(TEM)、X射线衍射(XRD)等方法,对Al<sub>2</sub>O<sub>3</sub>涂层的生长过程中的微观形貌、组织成分以及晶体结构的演变进行了研究与分析。结果：TiAl合金表面阴极微弧沉积过程中,在阴极表面发生非晶态Al(OH)<sub>3</sub>的吸附、脱水烧结形成Al<sub>2</sub>O<sub>3</sub>陶瓷涂层的沉积。结论：Al<sub>2</sub>O<sub>3</sub>涂层生长分前期Ⅰ、中期Ⅱ和后期Ⅲ三个阶段,前期起弧阻挡层被击穿,涂层生长较慢、组织致密且与基体结合良好;反应中期涂层生长较快,Al(OH)<sub>3</sub>不断吸附和脱水烧结,涂层结晶度提高;反应后期涂层生长速度变缓,表层组织疏松、多孔,相组成为87.5 %的α–Al<sub>2</sub>O<sub>3</sub>和12.5 %的γ–Al<sub>2</sub>O<sub>3</sub>。     

CP-Ti在含氟离子硝酸中表面附着物形成研究

钛具有优良的耐蚀性能,可长期工作在高浓度的沸腾硝酸介质中,是商业后处理较为理想的设备用材。本文采用SEM,EDS,XRD,XPS等表征手段对CP-Ti在含氟离子硝酸中试样表面出现的白色附着物进行分析,并解释其形成机理。结果表明：氟离子浓度在50 ppm以下时,CP-Ti腐蚀速率呈现由大到小并趋于稳定的规律;氟离子浓度在50 ppm及以上时,腐蚀速率呈现由大到小再变大的“v”型规律。试样表面的白色附着物的物相为TiO₂,其形成机理为：先是试样表面多孔膜的形成;其次是TiO₂以多孔膜上的孔为基点进行生长、脱落。     

NiSe_2块体材料的制备及热电性能研究

结合机械合金化(MA)与放电等离子烧结(SPS)工艺制备了NiSe_2块体热电材料。研究了MA球磨时间和SPS烧结温度对NiSe_2热电材料的物相、显微组织以及电热传输性能的影响。结果表明:当转速为425 r/min,球磨40 h后合成了约45 nm的NiSe_2纳米粉体。NiSe_2粉体是一种直接禁带半导体,禁带宽度为2.653 eV,其块体呈n型导电特征。烧结温度为773 K时,NiSe_2块体材料在323 K获得最大功率因子101μW·m~(-1)·K~(-2),热导率为7.5 W·m~(-1)·K~(-1),最大ZT值为0.0045。     

USb2单晶的生长及磁性和输运性质研究

采用Sb自助熔剂法成功生长高质量的USb₂单晶,并研究了磁化率、电阻、磁阻和比热等性质。研究表明,中等关联强度的USb₂中的5f电子具有巡游和局域双重特征。USb₂中的5f电子在260 K附近开始发生相干,203 K由顺磁态转变为反铁磁态,进行费米面的重构。在113 K以下局域的5f电子与传导电子发生第一次杂化使费米面附近电子结构发生变化。在54 K以下通过第二次杂化使得费米面附近形成了杂化能隙。在更低温度下晶体场效应对物理性质也产生了一定的影响。     

(Na1-yMy)1.6 Co2O4(M=K,Ca,Sr)的制备及电学性能

用溶胶凝胶法制备了NaCo2O4及(Na1-yMy)1.6Co2O4(M=K,0.05≤y≤0.35;M=Ca,Sr,0.10≤y≤0.40)的氧化物。研究结果表明:掺杂Ca、Sr的NaCo2O4样品的Seebeck系数都有一定提高;而掺杂K的NaCo2O4样品的Seebeck系数无明显提高,且掺K使NaCo2O4的功率因子降低;对NaCo2O4掺杂Ca的量0相似文献   

热变形对TC11-Ti2AlNb电子束焊接件力学性能的影响

本文应用纳米压痕和维氏硬度的方法表征了TC11/Ti2AlNb电子束焊接焊缝区域在不同状态下的硬度和弹性模量分布,结合组织的演变分析了微纳米尺度的力学的变化。结果表明：在TC11合金的热影响区,马氏体α"相的分解是显微硬度降低的主要原因;而在焊缝以及Ti2AlNb热影响区区域,相的析出导致了显微硬度的增加。通过热变形以及锻后热处理都能够提高焊接区域的弹性模量。相比较而言,焊接态的焊缝弹性模量只有92GPa;而在变形和热处理后,弹性模量的值达到了130GPa。通过拉伸实验结果分析,焊缝在变形及热处理后屈服强度得到了较大提高,这和焊缝区域硬度和弹性模量的变化趋势一致。     

DyF<sub>3</sub>掺杂热变形NdFeB磁体的微观结构和性能

基于热变形技术,研究制备了DyF3掺杂热变形NdFeB磁体的微观结构和磁性能。结果表明,通过热变形,磁体获得了具有明显C轴取向特征的扁平形状晶粒,其剩磁从前驱体烧结磁体的0.77 T提高至 1.34 T,提升了近74%。此外,热变形过程起到了晶界扩散的作用,使得DyF3进一步扩散至NdFeB主相之中,形成了(Nd, Dy)2Fe14B相,从而减小了因热变形带来的矫顽力损失。电化学测试表明,热变形过程可提高磁体腐蚀电位和减小电流密度。变形条件800 ℃/70%时,磁体具有最佳的综合磁性能和电化学性能,其磁性能可达：Br=1.34 T,Hcj=1225 kA/m和(BH)max=286 kJ/m3。     

Low temperature preparation and transport properties of ternary Pb–Bi–Te alloy

Polycrystalline samples of the ternary compound Pb₂Bi₄Te₅ were prepared by a solvothermal process based on the reaction between BiCl₃, Pb(NO₃)₂, Te, and KBH₄ in N,N-dimethylformamide (DMF), and followed by a post heat-treatment of compacted pellets. The microstructures of samples were characterized using XRD and SEM. The thermoelectric properties were determined by measuring the electric conductivity and the Seebeck coefficient. These samples show a disordered layered structure, with a maximum Seebeck coefficient of 84 μV/K around 520 K.     

Thermoelectric properties of n-type Bi<Subscript>2</Subscript>Te<Subscript>2.7</Subscript>Se<Subscript>0.3</Subscript> compounds prepared by spark plasma sintering

In this study, the thermoelectric properties of 0.1 wt.% Cdl₂-doped n-type Bi₂Te_2.7Sb_0.3 compounds, fabrieated by SPS in a temperature range of 250°C to 350°C, were characterized. The density of the compounds was increased to approximately 100% of the theoretical density by carrying out consolidation at 350°C. The Seebeck coefficient, thermal conductivity, and electrical resistivity were dependent on a hydrogen reduction process and the sintering temperature. The Seebeck coefficient and the electrical resistivity increased with the reduction process. Also, electrical resistivity decreased and thermal conductivity increased with sintering temperature. The results suggest that carrier density and mobility vary according to the reduction process and sintering temperature. The highest figure of merit, 1.93×10⁻³ K⁻¹, was obtained for the compound consolidated at 350°C for 2 min.     

Electronic transport properties of liquid Ga–Zn alloys

In the present work, the electrical resistivity and the absolute thermoelectric power (Seebeck coefficient) of the liquid Ga_x–Zn_1−x alloys have been measured at different concentrations as functions of temperature. The liquid alloy is contained in a quartz cell fitted with tungsten and tungsten-rhenium electrodes. The thermal conductivity is deduced using Wiedemann–Franz law. To interpret our experimental data, we used a quantum mechanical calculation of the electrical resistivity ρ and of the thermoelectric power S of Ga_x–Zn_1−x alloys known as the “Faber–Ziman” formalism.     

Low-temperature hysteresis in transport properties of UNi0.5Sb2

We report detailed data of the electrical resistivity and thermoelectric power (TEP) measurements carried out at temperatures 0.4–300 K on single crystals of a deficit diantimonide UNi_0.5Sb₂. Although the composition of this compound and the transition temperature to the antiferromagnetic state are almost the same as those previously reported, we found the hysteretic transition occurring in the ordered state at different temperature (T_t = 81 K) from those estimated in earlier works, i.e. at either T_t = 64 K or T_t1 = 40 K and T_t2 = 85 K. This fact observed in both kinds of applied measurements indicates clearly a high sensitivity of these temperatures [connected to some moment reorientation and the following reconstruction of the Fermi surface (FS)] in this compound, to the used technology of growing its single crystals by different groups of authors. Following the results of a similar character of the parent compound USb₂ and taking into account the recent literature reports, we suppose that the observed anomalies in the resistivity and TEP of UNi_0.5Sb₂ are also caused by the complex electronic structure. Thus changes at its FS in the ordered state (e.g. f -electron dualism leading to band renormalization involving magnons) are forcing the reorientation of the uranium magnetic moments in the successive magnetic unit cells.     

Effects of Sn-doping on the electrical and thermal transport properties of p-type Cerium filled skutterudites

p-type Sn-doped CoSb₃-based skutterudite compounds have been prepared using melting-quenching-annealing method and spark plasma sintering technique. Sn atoms in our samples are completely soluted on Sb-site with a fixed charge state and non-magnetic feature, providing a better choice to ascertain the effect of element doping at the [Co₄Sb₁₂] framework on the electrical and thermal transport properties in p-type skutterudites. Doping Sn at the framework introduces additional ionized impurity scattering to affect the electron transport greatly. Similar electrical transport properties between Ce_0.2Co₄Sb_11.2Sn_0.8 and Co₄Sb₁₁Sn_0.6Te_0.4 suggest that Ce fillers contribute little to the valence band edge. Filling Ce into the voids and doping Sn at the framework introduce additional phonon resonant and point defect scattering mechanisms, thereby reducing lattice thermal conductivity remarkably. Moreover, our data suggest that combining these two effects is more effective to suppress lattice thermal conductivity through scattering broad range of phonons with different frequencies.