二维材料异质结增强的硅基太赫兹光调制器

研究了石墨烯/氮化硼二维异质结增强的硅基太赫兹波光调制器。利用太赫兹波时域谱系统和实验室自主搭建的太赫兹波动态测试系统分别测试了808 nm激光对太赫兹波的静态和动态调制。当照射在太赫兹波调制器上的激光功率从0增加至500 mW时,平均太赫兹波透过率从58%下降到13%,静态调制深度最高达到76%（500 mW）。动态测试获得的最大调制速度为15 kHz (100 mW)。实验结果表明,与单层石墨烯增强的硅基调制器相比,石墨烯/氮化硼异质结可以更大地提高硅对于太赫兹波的调制深度,并提升调制速度。     

基于硅基石墨烯的全光控太赫兹波强度调制系统研究

在太赫兹通信等系统中需要利用太赫兹波调制器对信号进行调制.基于GaAs 等传统半导体材料设计和制作的调制器在太赫兹波段的响应过低,因而很难应用于太赫兹系统.为了弥补传统调制技术在带宽和调制深度不够的缺点,设计了一种全新的基于硅基石墨烯的全光控太赫兹强度调制系统.该调制系统利用材料中光生载流子对太赫兹波的吸收特性,通过调节照射到材料上的可见光光强来改变光生载流子浓度,从而实现对太赫兹波强度调制.从理论和实验两方面对这种新型太赫兹强度调制系统的调制深度和调制带宽进行了研究.研究结果表明,在泵浦光功率密度为18 mW/mm2时,该调制系统能在实验使用的THz-TDS 测试系统(0.1~2.5 THz)的整个频谱范围内进行有效的调制,调制深度可达到12 %.且随着泵浦光能量的增大,调制深度增大.     

基于石墨烯的光控太赫兹调制器

研究了锗基单层石墨烯结构宽带光控太赫兹调制器。利用实验室搭建的太赫兹时域光谱系统,实验证明了在1 550 nm飞秒光泵浦下,该太赫兹调制器工作带宽为0.2~1.5 THz。当泵浦光功率从0增加到250 mW时,该太赫兹波调制器的平均透过率从40%下降到22%,平均吸收系数从19 cm-1增加到44 cm-1,在0.2~0.7 THz,调制深度均高于50%,最大调制深度为62%（0.38 THz）。实验结果表明,相比于纯锗基太赫兹调制器,单层石墨烯的引入能增强对太赫兹波的调制效果。     

基于亚波长金属孔阵列的光控太赫兹强度调制器

太赫兹波强度调制器对太赫兹技术的发展至关重要。亚波长金属孔阵列可以激发表面等离子激元,增加入射电磁波的透射效率,极大地提高调制器的调制深度。提出了一种基于表面等离子激元的光控太赫兹波强度调制器。首先给出了器件所依赖的基本原理;其次利用传统的微纳加工技术在半绝缘砷化镓衬底上制作出二维亚波长金属孔阵列;最后搭建了太赫兹时域光谱系统,测试了器件样品对太赫兹波的透过率。结果表明:亚波长金属孔阵列可以引起透射率的异常增强,且透射率随着泵浦光强的增大而减小,在特定频率点实现了较高的调制深度。此研究为实现高调制深度的太赫兹波强度调制器提供了参考。     

太赫兹波前调控器件

正太赫兹波在电磁波谱中介于红外和微波之间。由于其具有许多潜在的应用,得到了人们广泛的重视、人们研发了许多用于太赫兹波谱裁剪和强度调制的器件、但是,却缺少太赫兹波前调制器件。介绍两种新的波前调制方法。第一种方法利用亚波长金属天线实现太赫兹的相位调制。选择八种亚波长天线,他们对太赫兹的振幅调制相通,但相位调制不同。根据不同的波前调制要求可以合理安排天线的分布。设计、制作并表征了透镜、衍射光学元件以及计算相息图、第二种方法是利用空间光调制器将泵浦光打在硅基底上。光生载流子的分布形成了太赫兹振幅全息图,通过光的一级衍射就可以实现预定的振幅相位分布。太赫兹全息图的变化可以达到每秒60帧,实现真正的动态调制。实验结果验证了方法的可行性。     

硅基金字塔结构光控太赫兹调制器

提出一种硅基金字塔结构光控太赫兹波调制器。通过化学刻蚀方法在高阻硅基底形成微米级的金字塔结构,研究该结构与高阻硅片对激光的反射率及对太赫兹的调制情况。实验表明,金字塔结构可有效降低激光反射率,提升激光利用率,并且通过增加太赫兹波调制面积,达到显著增强太赫兹波的调制效果,其调制深度达到90%以上。该硅基金字塔结构光控调制器可在极低的激光功率下工作,具有宽带、大幅度调制的特点,在太赫兹成像领域具有重要应用价值。     

新型光控砷化镓/侧边抛磨太赫兹光纤调制器

太赫兹调制器作为太赫兹技术应用的重要器件之一，在太赫兹通信、成像和传感等领域具有广泛应用前景。但是目前太赫兹调制器调制深度、工作带宽、稳定性等有待提升，这制约了太赫兹技术的进一步推广与发展。基于此，设计并制备了一种新型光控砷化镓/侧边抛磨太赫兹光纤（SPTF）调制器，将砷化镓转移到太赫兹光纤抛磨区，增强太赫兹波倏逝场与砷化镓相互作用。在外置808 nm激光器照射下实现对太赫兹波幅度调制，调制深度达到97.4%。实验结果表明，这种新型的光纤调制器具有较好的光控调制效果。同时，该器件体积小、集成度高，具有广泛应用的潜力。     

基于银/碳纳米颗粒近红外驱动的大调制深度太赫兹调制器

近红外光驱动的太赫兹调制器是太赫兹/红外光纤混合通信系统中的重要组成部分。这里提出了一种基于银纳米颗粒/碳量子点（Ag NPs/CDs）近红外驱动的太赫兹调制器。实验结果表明，银纳米颗粒（Ag NPs）与碳量子点（CDs）的结合会引起纳米颗粒的量子尺寸效应和介电限域效应，利用Ag NPs/CDs可以增强硅基底对近红外光的吸收，从而实现近红外驱动的太赫兹波调制。通过808 nm的近红外调制激励源，对样品进行了0.22～0.33 THz范围内的太赫兹透射特性的表征，与参考硅基片相比，Ag NPs/CDs近红外太赫兹调制器的调制深度可以达到83%左右，显著高于参考硅基片的调制深度（～54%），实现了大调制深度的太赫兹波调制。本研究工作在太赫兹/红外光纤混合通信系统中拥有重要的应用价值。     

石墨烯太赫兹调制器及330 GHz无线通信系统

现有太赫兹无线通信系统通常采用微波倍频或直接调源的方式。本文从太赫兹波空间调制技术出发,研究了一种基于直接调制技术的太赫兹无线通信系统。重点探索了一种基于石墨烯/半导体硅的复合结构(GOS),研究出调制速率达到1 MHz,调制深度50%以上,工作频带覆盖0.2 THz~2 THz频段的新型全光学太赫兹调制器。在此基础上,构建了330 GHz载波频率的太赫兹无线通信系统,实现了1 Mbps的通信速率。     

基于硅基等离子超表面的可调太赫兹调制器

由于硅对太赫兹的调制效果较差,所以从理论上和实验上研究了基于硅基等离子诱导透明(PIT)超表面的太赫兹调制器。研究结果发现在透射光谱中可以观察到明显的透明窗口,该透明窗口是由2个谐振器之间的近场耦合引起的。实验结果表明,随着泵浦光功率的增加,透明窗口出现了蓝移。当光泵功率从0 m W增加到700 m W时,0.70 THz处的振幅调制深度可以达到80.75%,同时研究了它的慢光效应。设计的这种新型的超表面结构增强了硅的调制效果,提供了一种实际应用的可能。     

基于氧化钼薄膜的光控太赫兹传输特性研究

本文采用热蒸发法制备了沉积在硅片上的200nm 氧化钼(MoO₃)的太赫兹调制薄膜。 在室温条件下,通过傅里叶光谱仪和太赫兹时域光谱系统(THz-TDS)技术,研究了MoO₃薄膜在不同激励光功率下的太赫兹传输特性。提出了薄膜重要光学参数的提取模型,利用透 射式太赫兹时域光谱技术测量了薄膜的时域信号,分别计算了太赫兹波在薄膜中的透过率及 调制效率及薄膜的复介电常数变化。结果表明,在980 nm激光器条件 下,随着激光器功率 的提高,MoO₃薄膜的太赫兹调制深度逐渐增加。在激光功率为266 mW时,在0.26 THz处 透过率达到最低为61%,调制效率(Modulation factor)达到最高为10%。通过分析MoO₃薄膜 的复介电常数及载流子密度变化,得出了激发生成的载流子浓度的提高导致介电常数的改变 , 增强了薄膜的导电性,从而减低了太赫兹波在薄膜中的透过率的结论。为MoO₃薄膜应用在 太赫兹波段调制领域提供了实验数据。     

Tunable,Grating-Gated,Graphene-On-Polyimide Terahertz Modulators

An electrically switchable graphene terahertz (THz) modulator with a tunable-by-design optical bandwidth is presented and it is exploited to compensate the cavity dispersion of a quantum cascade laser (QCL). Electrostatic gating is achieved by a metal grating used as a gate electrode, with an HfO₂/AlO_x gate dielectric on top. This is patterned on a polyimide layer, which acts as a quarter wave resonance cavity, coupled with an Au reflector underneath. The authors achieve 90% modulation depth of the intensity, combined with a 20 kHz electrical bandwidth in the 1.9–2.7 THz range. The modulator is then integrated with a multimode THz QCL. By adjusting the modulator operational bandwidth, the authors demonstrate that the graphene modulator can partially compensate the QCL cavity dispersion, resulting in an integrated laser behaving as a stable frequency comb over 35% of the operational range, with 98 equidistant optical modes and a spectral coverage ~1.2 THz. This paves the way for applications in the terahertz, such as tunable transformation-optics devices, active photonic components, adaptive and quantum optics, and metrological tools for spectroscopy at THz frequencies.     

基于VO2相变的光控太赫兹调制器

基于VO2薄膜相变特性,通过在石英基底上制备VO2薄膜和亚波长金孔阵列,并在理论和实验上研究了金属孔阵列与VO2薄膜置于基底同侧和异侧的两种太赫兹(THz)调制器。系统研究了在光泵浦条件下两种样品的THz波的传输特性。结果表明,随着泵浦光功率的改变,两种结构的器件均可以实现对THz波强度的调制。对比分析两种结构器件的THz透射谱发现,紧邻金属孔阵列的金属相VO2能够有效地抑制THz表面等离子体的局域透射增强效应,使调制器的调制深度得到显著增强,这对基于相变材料调制器的设计具有重要意义。     

Sulfurized Colloidal Quantum Dot/Tungsten Disulfide Multi-Dimensional Heterojunction for an Efficient Self-Powered Visible-to-SWIR Photodetector

Emerging semiconducting materials show considerable promise for application in the development of next-generation optoelectronic devices. In particular, broadband light detection is crucial in various applications, including multispectral imaging and cognition. Therefore, tuning the physical properties of semiconductors and thereby building an efficient heterojunction are important for achieving a high-performance photodetection device. In this study, a heavy p-type colloidal quantum dot (CQD) is synthesized through solution-based sulfurization. The resulting cubic-shaped CQD exhibits broadband and strong absorption, which enable its broadband absorption. Further, a multidimensional 0D-2D heterojunction is developed using p-type CQD and n-type tungsten disulfide (WS₂). This efficient p-n junction is operated as a fully self-powered optical sensor and phototransistor under various light illumination conditions. Under the self-powered condition, the CQD/WS₂ heterojunction device exhibits 440- and 200-fold-higher responsivity and detectivity, respectively, than pristine WS₂.     

基于表面钝化效应的砷化镓基太赫兹调制器性能

研究了表面化学硫硒钝化技术对砷化镓基光控太赫兹调制器件性能的增强效应和机制。实验表明,硫硒钝化能有效地去除砷化镓表面氧化物,减少表面复合中心,从而改善砷化镓的表面状态。钝化后,光致发光(PL)强度显著增强,是参考砷化镓基底的6倍。同时,钝化效应可以显著提升砷化镓中少数载流子的寿命,可达2.2 ns。表面钝化效应可以显著提高砷化镓基太赫兹调制器的调制性能,在3 mW激光功率下测得调制深度为41%,调制速率为88.81 MHz。该光控太赫兹调制器在低功率下具有高调制深度和调制速率,在太赫兹通信领域有巨大的应用潜力。     

Robust and High Photoluminescence in WS2 Monolayer through In Situ Defect Engineering

The photoluminescence quantum yield (PLQY) of the chemical vapor deposition (CVD) grown transition-metal dichalcogenides (TMDs) films is often much lower than their mechanically exfoliated counterparts, making the coexistence of large-area and high PLQY in TMDs monolayer a huge challenge. Here, an in situ defect engineering strategy is reported to fundamentally dilutes the impact of intrinsic sulfur vacancy on tungsten disulfide (WS₂) monolayer. By ingeniously incorporating oxygen atoms in the sulfur vacancy sites of WS₂ lattice via the CVD method, oxygen doped WS₂ monolayer exhibits remarkably improved optical properties. The PLQY is uniformly enhanced by nearly two orders and can reach up to 9.3%, which is even higher than mechanically exfoliated counterparts. Besides, strong W-O bonds endow materials with superior environment stability, and the high PLQY could persist with an endurance of up to 3 months under ambient conditions without any protection. More in-depth insights from the first-principle calculations illustrate that the enhancement mechanism is the synthetic action of the suppression of nonradiative recombination and conversion from trion to neutral, and the excellent stability arises from repaired saturated coordination bonds at sulfur vacancy sites. This method opens up more possibilities for both fundamental exciton physics and optoelectronics applications.     

Synthesis of 2H‐1T′ WS2‐ReS2 Heterophase Structures with Atomically Sharp Interface via Hydrogen‐Triggered One‐Pot Growth

2D transition metal chalcogenides (TMDs) with different compositions, phase structures, and properties offer giant opportunities for building novel 2D lateral heterostructures. However, the studies to date have been largely limited to homophase TMD heterostructures, while the construction of heterophase TMD heterostructures remains a challenge. Herein, the synthesis of 2H‐1T′ WS₂‐ReS₂ heterophase junctions with high‐quality interface structure via a hydrogen‐triggered one‐pot growth approach is reported. Sequential introduction of hydrogen during growth system, which acts as a “switch” to selectively turn off the growth of ReS₂ while turning on the growth of WS₂, allows WS₂ to seamlessly grow around ReS₂ to form the WS₂‐ReS₂ heterojunction. Moreover, WS₂ prefers to nucleate at the vertices of ReS₂ grain with fixed lattice orientation, which makes the surrounding WS₂ grains merge into single crystal. Scanning transmission electron microscopy reveals high crystal quality of the heterojunction with an atomically sharp 2H‐1T′ heterophase interface. Transient absorption spectroscopy indicates that the photocarriers can effectively separate at the heterophase interface. Based on the high quality heterophase junction, prominent rectification characteristics and polarization‐dependent photodiode properties are achieved. This study provides a robust way for the controlled synthesis of 2D heterophase structures, which is essential for their fundamental studies and device applications.     

Photoluminescence from Liquid‐Exfoliated WS2 Monomers in Poly(Vinyl Alcohol) Polymer Composites

While liquid phase exfoliation can be used to produce nanosheets stabilized in polymer solutions, very little is known about the resultant nanosheet size, thickness, or monolayer content. The present study uses semiquantitative spectroscopic metrics based on extinction, Raman, and photoluminescence (PL) spectroscopy to investigate these parameters for WS₂ nanosheets exfoliated in aqueous poly(vinyl alcohol) (PVA) solutions. By measuring Raman and PL simultaneously, the monolayer content can be tracked via the PL/Raman intensity ratio while varying processing conditions. The PL is found to be maximized for a stabilizing polymer concentration of 2 g L^?1. In addition, the monolayer content can be controlled via the centrifugation conditions, exceeding 5% by mass in some cases. These techniques have allowed tracking the ratio of PL/Raman in a droplet of polymer‐stabilized WS₂ nanosheets as the water evaporates during composite formation. No evidence of nanosheet aggregation is found under these conditions although the PL becomes dominated by trion emission as drying proceeds and the balance of doping from PVA/water changes. Finally, bulk PVA/WS₂ composites are produced by freeze drying where >50% of the monolayers remain unaggregated, even at WS₂ volume fractions as high as 10%.