Analysis of MPPT characteristics in photovoltaic power system

This paper describes characteristics evaluation of the power conditioner which has the function of Maximum Power Point Tracking (MPPT) by “mountain climbing method” through computer simulations. The generated power on the constant voltage control is compared to the one on MPPT with the load matching correction factor (Kpm). In this simulation, the following parameters are chosen, the rate of the voltage ΔV on changing the operating point and of the voltage ΔV_c on checking the maximum point.As a result, the influence of these parameters on Kpm is showed and it is made clear that we should decide the MPPT parameters with care.     

Outdoor testing of PV module temperature and performance under different mounting and operational conditions

Outdoor performance of photovoltaic (PV) modules primarily depends on the instantaneous plane-of-array irradiance (G_poa) and PV module temperature (T_pv). T_pv can be estimated from the ambient temperature (T_amb) and the G_poa as T_pv=T_amb+k_TG_poa. The coefficient k_T depends strongly on the way the PV module is mounted (open rack, ventilated or unventilated roof mounting, etc.), wind speed and also on the module type. In the presented paper, open rack mounted and unventilated roof integrated cases of PV module installation are experimentally and theoretically examined. Linear relationship with k_T is upgraded with a nonlinear one based on the energy balance model and measured data. Nevertheless, T_pv is also affected by the module’s regime of operation. The T_pv dependency on different regime of operation (open-circuit and maximum power point tracking) for two types of PV modules in two regimes is reported. Differences are discussed in light of energy balance equation within thermal management, where impact of the PV module conversion efficiency on T_pv is also shown.     

Solar cell junction temperature measurement of PV module

The present study develops a simple non-destructive method to measure the solar cell junction temperature of PV module. The PV module was put in the environmental chamber with precise temperature control to keep the solar PV module as well as the cell junction in thermal equilibrium with the chamber. The open-circuit voltage of PV module V_oc is then measured using a short pulse of solar irradiation provided by a solar simulator. Repeating the measurements at different environment temperature (40-80 °C) and solar irradiation S (200-1000 W/m²), the correlation between the open-circuit voltage V_oc , the junction temperature T_j , and solar irradiation S is derived.The fundamental correlation of the PV module is utilized for on-site monitoring of solar cell junction temperature using the measured V_oc and S at a short time instant with open circuit. The junction temperature T_j is then determined using the measured S and V_oc through the fundamental correlation. The outdoor test results show that the junction temperature measured using the present method, T_jo, is more accurate. The maximum error using the average surface temperature T_ave as the junction temperature is 4.8 °C underestimation; while the maximum error using the present method is 1.3 °C underestimation.     

A hybrid solar-assisted adsorption cooling unit for vaccine storage

A concept of a hybrid adsorption cooling unit for vaccine storage utilizing solar energy as a main power supply and a gas burner as an alternative power supply has been developed. The components of the cooling unit have been designed to work under the weathering conditions of Burkina Faso, West coast of Africa according to the requirements of the World Health Organization. For the first adsorber, which is driven by a gas burner, zeolite-13X has been selected. For the second adsorber to be driven by solar energy selective water sorbent SWS-2L has been applied. Water is selected as a refrigerant for both adsorbents. Theoretical investigations of the expected performance of the designed cooling unit have shown a coefficient of performance (COP) of 0.28 for the solar-operated system based on the heat input to the adsorption unit, at the design conditions of T_evap=−5 °C, T_con=55 °C, T_ads=38 °C, T_des(max)=122 °C. For the gas-heated system, also a COP of 0.28 has been estimated at the design conditions of T_evap=−5 °C, T_con=55 °C, T_ads=38 °C, T_des(max)=280 °C. The variations of COP, cooling capacity and the heating power required to operate both systems have been estimated for a broad range of desorption temperatures. It turns out that the SWS-2L/water system is much more sensitive to the operating conditions than the zeolite-13X/water system. The obtained results should serve in designing both control and heating components of the cooling unit.     

Fluid-rock interaction processes in the Te Kopia geothermal field (New Zealand) revealed by SEM-CL imaging

Scanning electron microscopy-cathodoluminescence (SEM-CL) imaging of hydrothermal quartz exposed by weathering in the Te Kopia geothermal field (New Zealand) has revealed a history of crystal growth, dissolution, overprinting and fracturing that cannot be detected using other observational techniques (e.g. transmitted or reflected light microscopy, back-scattered electron imaging or secondary electron imaging). The crystals initially grew as CL-dark quartz, at least 350 m below their present location on the Paeroa Fault scarp, in a neutral pH, 215±10 °C liquid reservoir (inferred from the analysis of primary liquid fluid inclusions: mean T_h of 213 °C; 0.2–0.4 wt.% NaCl_eq.). Relict quartz–adularia–illite alteration occurs at the surface, in the vicinity of the quartz crystals, and in drillcores from the nearby TK-1 exploration well. Repeated movement on the Paeroa Fault uplifted pyroclastic rocks hosting the quartz crystals, but also provided pathways for “pulses” of hot fluids to move through the system. Quartz precipitation occurred at the edge of the crystals as the reservoir fluids cooled, as indicated by micron-scale alternating CL-dark/CL-bright quartz growth bands, which contain fluid inclusions with T_h values of 210±40 °C. Pressure fluctuations were the likely cause of dissolution, marked by corroded crystal edges, with subsequent precipitation of quartz into open space. SEM-CL imaging shows that the quartz crystals contain healed fractures, which trapped low salinity fluids with T_h values of 201±6 °C. Low-pH fluids in the near-surface setting also rounded the quartz crystals, and coated them with kaolinite and CL-grey amorphous “silica residue”.     

Simulation of I–V characteristics of a PV module with shaded PV cells

The authors are studying a diagnostic method of a PV power generating system. We consider that the change of I–V characteristics can be utilized for the diagnosis. However, the report on the change of I–V characteristics is very little. In this paper, we investigate the relation between the output lowering due to shaded PV cells and the change of I–V characteristics, utilizing the computer simulation. It was proven from the simulation that I–V characteristics are changed by the condition of the shadow, which covered the module. The change of I–V characteristics of a PV module with shaded PV cells is discussed by the shift of the avalanche breakdown voltage of shaded PV cells.     

Organic solar cells consisting of stacked amine–thiophene copolymer and 3,4,9,10-perylenetetracarboxyl-bis-benzimidazole layers

Organic solar cells were fabricated using a new amine–bithiophene copolymer as an electron donor layer and 3,4,9,10-perylenetetracarboxyl-bis-benzimidazole (PV) as an electron acceptor layer. The amine–thiophene copolymer, poly{(9,9-dioctylfluorene-2,7-diyl)-co-[N,N′-bis(4-tert-butylphenyl)benzidine-N,N′-bis(phenylene-4,4′-diyl)]-co-(2,2′-bithiophene-5,5′-diyl)} (PF8-TPD-T2), had a glass transition temperature (T_g) at about 77 °C, and exhibited liquid crystalline states and a high hole mobility. The rigid bithiophene units in the polymer chain are probably responsible for the formation of the liquid crystalline states and the high hole mobility. A solar cell made of the PF8-TPD-T2 copolymer and PV layers showed a photocurrent density of 0.99 mA/cm², an open-circuit voltage of 0.61 V, and an energy conversion efficiency of 0.332%. The photocurrent of the solar cells was generated at both the copolymer and PV layers, and the copolymer layer was the main contributor to photocurrent when the thickness of the polymer was about 17 nm. After annealing the solar cells at temperatures well above the glass transition temperature (T_g) of the copolymer, the photocurrent action spectra of the solar cells were broadened and the performance was improved. The changes were mostly due to the increased contribution of the PV layer to the photocurrent by the annealing.     

Three-stage growth of Cu–In–Se polycrystalline thin films by chemical spray pyrolysis

Structural, optical and electrical properties of polycrystalline Cu–In–Se films, such as CuInSe₂ and ordered vacancy compounds (OVC), prepared by three-stage process of sequential chemical spray pyrolysis (CSP) of In–Se (first stage), Cu–Se (second stage) and In–Se (third stage) solutions have been studied in terms of substrate temperature at the second stage (T_S2). The films grown at T_S2420 °C exhibited larger grains in comparison with the Cu–In–Se films grown by the usual CSP method. Optical gap energy was approximately 1.06 eV for 360 °CT_S2420 °C, but increased dramatically from 1.06 to 1.35 eV when the T_S2 rose from 420 to 500 °C. Conductivity type was p-type for T_S2<420 °C, but n-type for T_S2>420 °C.     

Characterization of PV array output using a small number of measured parameters

The purpose of the present study was to develop a sufficiently good fit for the measured I–V curve of a PV module and array using only three easily measurable parameters: —the open-circuit voltage (V_oc); —the short-circuit current (I_sc); —the maximum power (P_m). With an additional three parameters ( ; ; ) it is possible to describe any I–V curve, taking into account cell temperature T and solar radiation Q. This method has been tested on various solar array panels as well as on a single 10 cm dia. solar cell. The difference between the real curve and the proposed fit was found to be less than 3 percent for a fixed temperature and radiation and about 6 percent for various combinations of temperature and radiation.     

A study of a two stage maximum power point tracking control of a photovoltaic system under partially shaded insolation conditions

A photovoltaic (PV) array shows relatively low output power density, and has a greatly drooping current–voltage (I–V) characteristic. Therefore, maximum power point tracking (MPPT) control is used to maximize the output power of the PV array. Many papers have been reported in relation to MPPT. However, the current–power (I–P) curve sometimes shows multi-local maximum point mode under non-uniform insolation conditions. The operating point of the PV system tends to converge to a local maximum output point which is not the real maximal output point on the I–P curve. Some papers have been also reported, trying to avoid this difficulty. However, most of those control systems become rather complicated. Then, the two stage MPPT control method is proposed in this paper to realize a relatively simple control system which can track the real maximum power point even under non-uniform insolation conditions. The feasibility of this control concept is confirmed for steady insolation as well as for rapidly changing insolation by simulation study using software PSIM and LabVIEW.     

Low-temperature deposition of amorphous silicon solar cells

We develop amorphous silicon (a-Si:H)-based solar cells by plasma-enhanced chemical vapor deposition (PECVD) at deposition temperatures of T_s=75°C and 100°C, compatible with low-cost plastic substrates. The structural and electronic properties of low-temperature standard PECVD a-Si:H, both doped and undoped, prevent the photovoltaic application of this material. In this paper, we demonstrate how to achieve device-quality a-Si:H even at low deposition temperatures. In the first part, we show the dependence of structural and carrier transport properties on the deposition temperature. The sub-band gap absorption coefficient and the Urbach energy increase when the deposition temperature declines from T_s=150°C to 50°C, the conductivity of doped layers and mobility-lifetime product of intrinsic a-Si:H drop drastically. Therefore, in the second part we investigate the impact of increasing hydrogen dilution of the feedstock gases on the properties of low-temperature a-Si:H. We restore n-type a-Si : H device-quality conductivity while the p-type a-Si:H conductivity is still inferior. For undoped layers, we depict the hole diffusion length, the mobility-lifetime product for electrons, the Urbach energy, and sub-band gap absorption coefficient as a function of the hydrogen dilution ratio. We incorporate these optimized materials in solar cell structures of single and multilayer design and record initial efficiencies of η=6.0% at a deposition temperature of T_s=100°C, and η=3.8% at T_s=75°C. For prospective opaque polymer substrates we develop, in addition to our conventional pin cells, devices in nip design with similar performance.     

Calculation of CIS and CdTe module efficiencies

An accurate and fast method to calculate the efficiency of Cu(In,Ga)Se₂ (CIGS) and CdTe thin-film solar modules is presented here. This comprises a new method to calculate the fill factor as a function of discrete and distributed series resistance, and of shunt conductance: a three-dimensional, third-order polynomial approximation is presented, and the expansion of the coefficients as a power series of 1/V_oc is given. Analytical expressions are presented which fit experimental data of the optical absorption in ZnO as a function of its thickness or sheet resistance. Together with a calculation outline of the series and shunt effects of the module integration, this constitutes a practical module design tool. This is illustrated with results of dependence of module efficiency on cell length, window and absorber sheet resistance, interconnect contact resistance, “softness” of the cell I–V curve, and absorber material (CIGS or CdTe). Optimal or critical values for these parameters are given.     

Field-induced surface passivation of p-type silicon by using AlON films

In the present work, we report on the evidence for a high negative charge density in aluminum oxinitride (AlON) coating on silicon. A comparative study was carried out on the composition and electrical properties of AlON and aluminum nitride (AlN). AlON films were deposited on p-type Si (1 0 0) substrate by RF magnetron sputtering using a mixture of argon and oxygen gases at substrate temperature of 300 °C. The electrical properties of the AlON, AlN films were studied through capacitance–voltage (C–V) characteristics of metal–insulator–semiconductor (MIS) using the films as insulating layers. The flatband voltage shift V_FB observed for AlON is around 4.5 V, which is high as compared to the AlN thin film. Heat treatment caused the V_FB reduction to 3 V, but still the negative charge density was observed to be very high. In the AlN film, no fixed negative charge was observed at all. The XRD spectrum of AlON shows the major peaks of AlON (2 2 0) and AlN (0 0 2), located at 2θ value of 32.96° and 37.8°, respectively. The atomic percentage of Al, N in AlN film was found to be 42.5% and 57.5%, respectively. Atomic percentages of Al, N and O in EDS of AlON film are 20.21%, 27.31% and 52.48%, respectively.     

More stable low gap a-Si:H layers deposited by PE-CVD at moderately high temperature with hydrogen dilution

In the present work, several series with variation of deposition parameters such as hydrogen dilution ratio, VHF-power and plasma excitation frequency f_exc have been extensively analyzed. Compared with “conventional” more-stable layers obtained at 200–250°C and high H₂ dilution ratios of about 10, it was observed that electrical transport properties after light-induced degradation of layers deposited at “moderately high” temperatures (300–350°C) are equivalent but required lower H₂ dilution ratios (between 2 and 4). As a consequence, the deposition rate of more stable layers obtained at moderately high temperatures is increased by a factor of 2. Moreover, optical gaps of a-Si:H deposited at 300–350°C are significantly lower (by approx. 10 meV); furthermore, they decrease with f_exc.     

Capacitive load based on IGBTs for on-site characterization of PV arrays

This paper describes the practical design of a portable capacitive load based on insulated gate bipolar transistors (IGBTs), which is used to measure the I–V characteristics of PV arrays with short-circuit currents up to 80 A and open circuit voltages up to 800 V. Such measurement allows on-site characterization of PV arrays under real operating conditions and also provides information for the detection of potential array anomalies, such as broken cells or defective connections. The presented I–V load is easy to reproduce and low-cost, characteristics that are within the reach of small-scale organizations involved in PV electrification projects.     

Theoretical storage capacity for solar air pretreatment liquid collector/regenerator

A new liquid regeneration equipment—solar air pretreatment collector/regenerator for liquid desiccant cooling system is put forward in this paper, which is preferable to solution regeneration in hot and moist climate in South China. The equipment can achieve liquid regeneration in lower temperature. When the solution and the air are in “match” state in collector/regenerator, a match air to salt mass ratio ASMR^* is found by theoretical study in which there is the largest theoretical storage capacity SC_max. At T_r = 60 °C and X_in = 2.33 kg/kg, theoretical calculation discovers when Y_in drops from 29 to 14 g/kg, the SC_max increase 50% compared with ASMR^* being around 26–27. After two new concepts of the effective solution proportion (EPS) and the effective storage capacity (ESC) are defined, it is found by theoretical calculation that when ESP drops from 100% to 67%, ESC raises lowly, not drops and liquid outlet concentration C_str.sol increases from 40% to 49% in which its increment totals to 90%. All these data explain fully that air pretreatment liquid regeneration equipment enables to improve the performance of liquid desiccant cooling system.     

Electrosynthesis and characterization of GaAs in acid solutions by potentiostatic method

Gallium arsenide (GaAs) is one of the important materials used for the fabrication of light emitting diodes, solar cells, microwave devices, etc. In the present work, electrodeposition of GaAs was successfully carried out potentiostatically from an aqueous solution mixture of gallium chloride (GaCl₃) and arsenic oxide (As₂O₃). The optimum deposition potential, pH and bath temperature to synthesize GaAs thin films are found to be −0.8 V versus SCE, 2.0±0.1 and 60 ^°C, respectively. The effects of solution pH, bath temperature and deposition potential on the gallium content of GaAs films are studied. Photoelectrochemical (PEC) solar cells using n-GaAs photo-anode in a polysulphide electrolyte is constructed and I–V, C–V studies are carried out. Various semiconductor parameters such as, flat-band potential, band bending, donor density, depletion layer width are evaluated and the results are discussed.     

Sand erosion of solar glass: Specific energy uptake,total transmittance,and module efficiency

Surface roughness, R_Z, normal transmittance, Τ_N, total transmittance, Τ_T, and photovoltaic (PV) module efficiency, η_S, were measured for commercial solar glass plates and PV test modules identically sandblasted with different loads of quartz sand (200–400 μm), impact inclination angles, and sand particle speed. Measured data are presented versus the specific energy uptake during sand blasting, E (J/m²). Cracks, adhering particles, and scratch‐like textures probably caused by plastic flow phenomena could be observed after sand blasting. Their characteristic size was much smaller than that of sand particles. After blasting and subsequent cleaning, the glass surface was still covered with adhering glass particles. These particles, cracks, and scratch‐like textures could not be removed by cleaning. For sand blasting with α = 30° inclination angle and E = 30 000 J/m², normal transmittance, total transmittance, and relative module efficiency decreased by 29%, 2% and ∽2%, respectively. This finding indicates that diffusive transmission of light substantially contributes to PV module efficiency and that the module efficiency decrease caused by sand erosion can be better estimated from total than by normal transmittance measurements.     

Evaluation of temperature characteristics of high-efficiency InGaP/InGaAs/Ge triple-junction solar cells under concentration

Temperature characteristics of the open-circuit voltage (V_oc) were investigated in the temperature range from 30°C to 240°C for the InGaP/InGaAs/Ge triple-junction cells. Also, single-junction cells that had the similar structure to the subcells in the triple-junction cells were studied. In the high-temperature range (from 170°C to 240°C), the temperature coefficients of V_oc of the InGaP/InGaAs/Ge triple-junction solar cell (dV_oc/dT) were different from those in the low-temperature range (from 30°C to 100°C). This is because photo-voltage from the Ge subcell becomes almost 0 V in the high-temperature range. It was found that the open-circuit voltage of a Ge single-junction cell reduced to almost 0 V temperatures over 120°C under 1 sun condition.     

I–V curve simulation by multi-module simulator using I–V magnifier circuit

This paper presents an I–V curve simulation of PV array/modules using multi I–V magnifier circuits. The circuit magnifies an I–V output of a pn photo-sensor, which is regarded as a small solar cell, by analog technology. About 30 W I–V curve simulator circuits were made and their characteristics were evaluated. LED light irradiated into the photo-sensor works like irradiation of sun light on real PV modules. It has been confirmed that each voltage gain and current gain of the circuit is independently adjustable and the circuit magnifies an I–V output of the photo-sensor successfully. FF of the circuit can be modified by shunt register connected to the photo-sensor in parallel. The circuit showed enough response ability to apply the maximum power point tracker evaluation of PV inverters. Temperature dependence of module output can be simulated by temperature control of the photo-sensor. The result of output characteristics of series connection of the I–V magnifier circuits suggests that the simulator system composed of multi I–V magnifier circuit could simulate partial shading effect of PV array output.