超导YBa_2Cu_3O_(7+δ)/硅橡胶复合材料的压敏与介电特性

采用YBa_2Cu_3O_(+δ)(简称YBCO)多晶陶瓷超导粉末与硅橡胶(110型)按不同质量比进行配料, 经过特殊的制备工艺, 合成不同含量的超导YBCO/硅橡胶高分子复合材料, 分别测量样品的压敏效应和介电特性. 结果表明, 在不同应力作用下, 样品电阻值的变化范围在1～4个数量级. 样品电阻值随测量温度的降低(300~50 K)呈下降趋势, 测量温度降到90 K时, 样品电阻值发生突变, 但在90~50 K没有观察到超导零电阻现象. 室温下, 样品的介电常数随频率的增加(1 kHz~5 MHz)而减小, 介电损耗随测量频率的增大先增大后减小. 随着YBCO含量的增加, 形成的超电容网络微观结构也就越多, 样品的电阻逐渐减小电流加大, 导致超电容中电解质的极化强度有所增加, 两者共同作用的结果导致样品的介电常数、介电损耗均随着YBCO含量的增加而增大.     

超导YBa2Cu3O7 +δ/硅橡胶复合材料的压敏与介电特性

采用YBa₂Cu₃O_{7 +δ}(简称YBCO)多晶陶瓷超导粉末与硅橡胶(110型)按不同质量比进行配料,经过特殊的制备工艺,合成不同含量的超导 YBCO/硅橡胶高分子复合材料,分别测量样品的压敏效应和介电特性。结果表明,在不同应力作用下,样品电阻值的变化范围在1～4个数量级。样品电阻值随测量温度的降低(300~50K)呈下降趋势,测量温度降到90K时,样品电阻值发生突变,但在9050K没有观察到超导零电阻现象。室温下,样品的介电常数随频率的增加(1 kHz~5 MHz)而减小,介电损耗随测量频率的增大先增大后减小。随着YBCO含量的增加,形成的超电容网络微观结构也就越多,样品的电阻逐渐减小电流加大,导致超电容中电解质的极化强度有所增加,两者共同作用的结果导致样品的介电常数、介电损耗均随着YBCO含量的增加而增大。     

粒径对Ni/硅橡胶复合材料压敏性及介电性质的影响

采用不同粒径的Ni粉与硅橡胶(110型)按质量比2.4∶1.0制成Ni/硅橡胶复合材料, 分别测量了其压敏导电性及介电性质, 并结合扫描电镜照片对其微观导电机制进行了分析。结果表明随着填料Ni粉粒径的减小, Ni/硅橡胶复合材料的直流电阻率对外加压强更加敏感: 在低压强下, 粒径为74、48和18 μm的样品的电阻率随压强的变化率分别为1.73×104、2.59×104和3.71×10 4 Ω·m/kPa。样品直流电阻率陡降的区域随粒径的减小向压强较小的方向移动, 显示出复合材料的渗流阈值与填充粒子的粒径有关: 粒径越小, 渗流阈值也越小。Ni/硅橡胶复合材料的交流电导率、介电常数、介电损耗均随填料Ni粉粒径的减小而变大: Ni粉粒径为18 μm的Ni/硅橡胶复合材料的电导率约为10-2 S·m-1, 比74 μm粒径样品的电导率(约10-7 S·m-1)提高了5个数量级; 对应的介电常数由约102提高到约103。改变填料Ni粉粒径可以有效地调节复合材料的弹性和压敏、电输运特性。      

Ni/硅橡胶复合材料压敏性及介电性质

采用不同粒径Ni粉与硅橡胶(110型)按质量比2.8∶1制成Ni/硅橡胶复合材料,测量其压敏导电性及介电性质。结果表明,填料粒径300 nm的Ni/硅橡胶复合材料导电压敏性显著减小,交流电导率、介电常数、介电损耗也变小,且随频率基本没有变化。当粒度很小时,金属颗粒会由导体向绝缘体转变且与温度有关。实验表明,常温下金属镍粉在亚微米尺度就会有显著的小尺寸效应。金属高分子复合材料的研究为探讨金属填料的小尺寸效应提供了一种简便、有效的方法。     

硅橡胶/镍粉复合材料的力敏性能

为探讨硅橡胶/镍粉复合材料的力敏性能,研究了不同掺量镍粉填充硅橡胶复合材料试样的电阻随拉应力、压应力的变化规律,并结合扫描电镜观察进行了机理分析。研究结果表明,所制备的硅橡胶/镍粉复合材料试样的电阻随拉、压应力的增加而减小,镍粉掺量越大,电阻对应力变化越敏感;在2MPa的拉、压应力作用下,硅橡胶/镍粉复合材料试样的电阻变化最大分别可达11个和12个数量级。硅橡胶/镍粉复合材料优异的力敏效应是由量子隧道效应导致的。     

生长温度对PLD原位生长SrTiO3薄膜结构与非线性介电性能的影响

采用脉冲激光沉积法 ( PLD ) 制备的Y1B2Cu3O7-x薄膜作为叉指底电极,然后生长 SrTiO3介质薄膜,形成叉指型压控电容结构。通过对 SrTiO3薄膜的原位生长温度与薄膜微观结构及非线性介电性能之间的关系研究,发现随生长温度的升高薄膜晶粒逐步增大然后变小,薄膜的介电常数可调率和本征介电损耗随晶粒大小的增大而增加,而非本征损耗则随晶粒取向的增加而减小。     

磁场对Ni/硅橡胶复合材料交流电导率及介电性质的影响

采用硅橡胶（110型）与金属（镍粉）按质量比为1∶2.7进行配料, 应用室温二次固化合成Ni/硅橡胶压敏复合材料样品。室温下测量了样品的压阻效应, 比较了外加0.024 T磁场前后样品的介电性质。结果表明, 当压强从3.75kPa到312.5kPa时, 样品直流电阻率下降了8个数量级。与加磁场前相比, 0.024T的磁场使得低频(40~104Hz)交流电导率提高了2.46倍, 介电常数提高了20%, 介电损耗提高了2倍, 这主要是由复合材料中铁磁绝缘体铁磁颗粒膜的隧道磁电阻效应以及磁电耦合引起的。撤去磁场后交流电导率、介电常数和介电损耗均不能回到加磁场前的初始值, 这与Ni粉的铁磁性有关。Ni/硅橡胶压敏复合材料的压阻、 磁电阻效应及磁电耦合等物理性质在磁传感器件、 信息储存等领域有潜在的应用价值。      

粉体堆积空隙率对介电常数的影响

通过对不同粒级的石英、方解石、滑石、硅灰石等粉体进行介电性能测量，获得不同频率激励下的电容值和损耗值，分析了粉体粒度及空隙率对粉体堆积态介电常数之间的变化关系。实验结果表明，堆积体空隙率随粒度的增大而提高，堆积态介电损耗随粒度增大而减小，即介电损耗随堆积体空隙率减小而增大。     

掺杂Y^3＋对BiFeO3陶瓷电学性能的影响

BiFeO3是少数在室温下同时具有铁电性和磁性的材料之一，实验添加Y^3＋制备Bi1-xYxFeO3（x=0．05，0．1，0．15，0.2）陶瓷，研究了样品的相结构、微现形貌及电学性能。实验结果表明：所制备的陶瓷样品为斜方六面体结构；随Y^3＋添加量的增加，样品电容率增大，介电损耗先减小后增大；样品的剩余极化值Pr从0．132增大到0．160μC/cm^2。     

一种压敏超导-金属-高分子复合材料

将高温超导材料YBa2Cu3O7 8与硅橡胶复合,制备了一种电阻对压力敏感的超导-高分子复合材料,并对不同温度下材料的物理性质进行了测量.结果表明这种材料的电阻率随压强的增加呈指数衰减,在10MPa压强作用下,材料的电阻率降低10个数量级,复合材料的电阻率及其对压强的敏感性随组分比例的不同而变化.研究发现这种超导-高分子复合材料的电阻率及其对压力的敏感性可以通过添加第3种金属组分来有效地调节;超导-金属-高分子复合材料的电阻率在150K以下有一个突然下降.     

Cure cycle optimization of composites by dielectric measurements

Cure cycle monitoring by dielectric loss factor was investigated for prepreg composites based on epoxy, epoxy-phenolic, polyimide and phenolic matrices. Dielectric loss measurements were carried out to establish optimal cure conditions for the various polymer composites with respect to testing rates, curing temperature and timing for pressure application. For each polymer composite studied, initial laboratory experiments were carried out in a temperature-programmable oven to determine the onset of polymer flow, the temperature range where resin viscosity is appropriate for pressure application and the duration of the cross-linking reaction. Subsequently, autoclave processing was conducted using similar conditions accompanied by in situ dielectric loss monitoring. Dielectric cure monitoring of room temperature aged, epoxy-based prepreg indicated that curing of aged prepregs is possible provided a flow region exists. Flexural properties of specimens prepared from composite laminates processed under optimized conditions substantiated the adequacy of in situ dielectric loss measurements for cure monitoring of prepreg composites.     

炭黑/热塑性硫化胶复合材料导电的奇异性

系统地研究了炭黑(CB)/热塑性硫化胶(TPV)(三乙丙橡胶/聚丙烯类型)复合材料的导电性能,发现CB/TPV复合材料具有独特的电学性能。交联的橡胶相的存在对导电炭黑粒子既产生排斥效应,又产生阻隔效应。前者对导电网络的形成有利,而后者正相反。在低橡胶相含量时,随橡胶相含量增加,复合材料电阻呈下降趋势;而高橡胶含量时,随橡胶相含量增加,复合材料的电阻升高。高橡胶含量时,复合材料电阻的逾渗效应明显减弱。复合材料在熔融状态下热处理时,其电阻-时间效应明显依赖于模具压力。同样热处理时间下,压力越高,电阻越大。压力达到一定值后,体系的电阻基本不受热处理时间的影响。初步认为这是由于热处理完毕释压后,变形的弹性粒子发生形变恢复从而对热处理形成的聚集网络有一定的破坏作用所致。自由升温实验表明:CB/TPV复合材料具有NTC现象,即使在结晶熔化区也未展示PTC行为,这与橡胶粒子的热膨胀排斥效应有关。在熔融态停留阶段电阻的稳定性很好,这主要归因于熔融态下炭黑粒子聚集(对电导有利)和橡胶相粒子聚集(对电阻有利)相互竞争的结果。      

Effect of Ba(Ti<Subscript>(0.9)</Subscript>Sn<Subscript>0.1</Subscript>)O<Subscript>3</Subscript> ceramic doping on optical,thermal and dielectric properties of polycarbonate host

Ba(Ti_(0.9)Sn_0.1)O₃ (BTS) ceramic was prepared by a conventional ceramic processing. BTS-polycarbonate (PC) composites were prepared at different BTS concentrations by weight in order to study their optical and dielectric properties. The absorption coefficient (α) was determined in the wavelength range from 250–600 nm at room temperature for all BTS-PC composites. The optical gap (E _opt) was also determined for BTS-PC composites. The variation of the absorption coefficient (α) and optical gap (E _opt) with BTS content are reported. It was found that BTS ceramic highly enhances the UV absorption of PC host at 300 nm. The optical gap decreases up to the value of 3.93 eV as BTS content increases up to 35 wt% and this was attributed to the formation of localized states in the forbidden gap. The relative dielectric permittivity, dielectric loss and loss tangent were measured at temperature range from room temperature up to 150°C and at frequency values 1 kHz, 10 kHz and 50 kHz. Addition of BTS to PC host, however, will increase relative dielectric permittivity, dielectric loss and loss tangent. Besides, increasing of temperature will also increase relative dielectric permittivity, dielectric loss and loss tangent especially above the glass transition temperature of PC host and this behaviour was attributed to the segmental motion of polymer chains. On the other hand, this study shows that there is a good agreement between SEM, DSC and dielectric results and also between optical gap and a.c. conductivity results. Moreover, SEM and DSC results reveal that addition of BTS ceramic particles to PC host will reduce the physical bond between polymer chains or may be will increase the free volume in the polymer host and consequently will enhance the segmental motion of polymer chains and this behaviour is independent of ceramic phase.     

纳米BaTiO3-SiCw/聚偏氟乙烯三元复合薄膜的制备及其介电性能

以15wt%十六烷基三甲基溴化铵改性碳化硅晶须(CTAB-SiC_w)和KH550改性纳米BaTiO₃(BT)为填料,聚偏氟乙烯(PVDF)为成膜物质,通过溶液流延法制备了BT-SiC_w/PVDF三元复合薄膜,利用FTIR、XRD、SEM和LCR介电温谱仪-高温测试系统联用装置对产物进行结构表征和介电性能测试。结果表明:KH550可以成功改性BT粒子且不会改变BT晶体结构,SiC_w和BT能够较好地分散在PVDF基体中;随着BT引入量的增加,复合薄膜的介电常数先增加后减小,其中当引入10wt%BT时介电性能最优,即频率f=500 Hz、介电常数ε_rmax=33、介电损耗tanδ_max=0.154。随着温度的升高,该试样的介电常数和介电损耗也逐渐增加,并在120℃达到最大值(f=500 Hz、ε_rmax=110、tanδ_max=1.3)。结果对于研究具有高介电常数的三元复合电介质材料为在埋入式电容器中获得应用提供了一种策略。      

聚吡咯/聚酯纤维复合材料吸波性能的探讨

聚吡咯是含有π电子共扼体系的高聚物,经掺杂反应电导率发生变化,当其电导率处于半导体状态时,具有良好的吸波性能.本文采用原位聚合法以聚酯纤维为基布,以吡咯为单体,制备具有良好吸波性能的柔性聚吡咯/聚酯纤维复合材料.首先探讨了吡咯浓度,温度,时间对复合材料吸波性能和表面电阻的影响;其次研究了其外观形貌和强力.结果表明:制备的聚吡咯复合材料具有良好的吸波性能;在0~106Hz频率内,吡咯浓度0.8 mol/L实验组,介电常数的实部、虚部均最大;1.0 mol/L实验组的损耗角正切最大;吡咯浓度0.8 mol/L实验组表面电阻最小;室温实验组的介电常数实部、虚部、损耗角正切最大,且明显优于其他组.反应时间150 min实验组的各项介电性能都明显优于其他组,且其电阻最小,导电率最好.     

All-organic PANI–DBSA/PVDF dielectric composites with unique electrical properties

Novel all-organic polymer high-dielectric permittivity composites of polyaniline (PANI)/poly (vinylidene fluoride) (PVDF) were prepared by solution method and their dielectric and electric properties were studied over the wide ranges of temperatures and frequencies. To improve the interface bonding between two polymers, dodecylbenzenesulfonic acid (DBSA), a bulky molecule containing a polar head and a long non-polar chain was used both as a surfactant and as dopant in polyaniline (PANI) synthesis. Synthesized conducting PANI–DBSA particles were dispersed in poly(vinylidene fluoride) (PVDF) matrix to form an all-organic composite with different PANI–DBSA concentrations. Near the percolation threshold, the dielectric permittivity of the composites at 100 Hz frequency and room temperature was as high as 170, while the dielectric loss tangent value was as low as 0.9. Like typical percolation system, composites experienced high dielectric permittivity at low filler concentrations. However, their dielectric loss tangent was low enough to match with non-percolative ceramic filler-based polymer composites. Maximum electrical conductivity at 24 wt% of PANI–DBSA was mere 10^?6 S/cm, a remarkably low value for percolative-type composites. Increase in the dielectric permittivity of the composites with increase in temperature from 25 to 115 °C for different PANI–DBSA concentrations was always in the same range of 50–60 %. However, the degree of increase in the electrical conductivity with the temperature was more prominent at low filler concentrations compared with high filler concentrations. Distinct electrical and their unique thermal dependence were attributed to an improved interface between the filler and the polymer matrix.