移动通信干扰器不可乱用

近期,泉州无线电管理处陆续接到泉州移动和泉州联通公司的干扰投诉,称泉州酒店和泉州市委组织部附近GSM手机不能正常拨打。对此,我处组织监测人员对GSM网络运行情况进行跟踪及测试。首先,对酒店附近进行现场测试,结果发现在860-910MHz、920-980MHz两频段内存在不明干扰信号,场强为60dBμV/m;在1.8-1.9GHz频段测试的背景场强与860-910MHz、920-980MHz两频段测试频谱相比提高约2-10dB。然后,在泉州市委大院的2号楼附近将定位天线对准1号楼房顶时,发现底噪明显提升,从原来的-100dBm提升到了-66dB,幅度达到了34dBm左右,再将定位天线对…     

凌力尔特推出新的固定增益放大器

正2014年4月14日-凌力尔特公司(Linear Technology Corporation)推出20 MHz至2 GHz、单端输入及输出、固定增益放大器LTC6431-20,该器件提供卓越的46.2 dBm OIP3(输出三阶截取)和2.6 dB噪声指数。其OP1dB(输出1dB压缩点)为同类最佳的22 dBm。该器件有两个级别版本,包括100%经过测试、在240MHz保证提供42.2 dBm最低OIP3的A级版本,以及在同样的频率范围提供45.7 dBm典型OIP3的B级版本。该器件在20 MHz至1.4 GHz的频率范围内,输入和输出均在内部匹配至50 Ω,并具有一个20 dB功率增益     

凌力尔特推出新的固定增益放大器

正2014年4月14日-凌力尔特公司(Linear Technology Corporation)推出20MHz至2GHz、单端输入及输出、固定增益放大器LTC6431-20,该器件提供卓越的46.2dBm OIP3(输出三阶截取)和2.6dB噪声指数。其OP1dB(输出1dB压缩点)为同类最佳的22dBm。该器件有两个级别版本,包括100%经过测试、在240MHz保证提供42.2dBm最低OIP3的A级版本,以及在同样的频率     

一个950MHz CMOS低噪声放大器的设计

介绍了一个采用0.18μm 1.8V RF CMOS工艺,适合GSM接收器,中心频率为950MHz的低噪声放大器(LNA)的设计过程,并给出了spectreRF的模拟结果.在935～960MHz频带内,LNA功率增益大于16dB,阻抗匹配系数S11小于-18dB,噪声系数(NF)小于2.7dB,IIP3为-3.06dBm,ldB压缩点为-10.955dBm,功耗小于20mW.     

具有高可调增益范围的CMOS宽带中频调制器

利用TSMC 0 .2 5 μmCMOS混合工艺 ,针对超外差结构的无线宽带收发器 ,实现了一个能够工作在 5 0～6 0 0MHz的中频调制器 ,并对该调制器进行了仿真和测试。由于该调制器在输出端采用了一个具有高可调增益范围而且鲁棒性能好的可变增益放大器 (VGA) ,从而使得该调制器具有超过 70dB的增益可调范围。测试结果表明 ,该调制器能够工作在 5 0～ 6 0 0MHz的频率上 ,输出功率为 - 81～ - 10dBm ,最小增益的输出噪声为 - 130dBm/ Hz,最大增益的输出P1dB点为 - 4 .3dBm ,在 3V的电源电压下 ,电流功耗为 32mA。     

产品介绍

X—波段放大器中心频率:10GHz带宽:±500MHz增益:28dB输出功率:-20dBmKu-波段放大器中心频率:13～18GHz带宽:±250MHz增益:30dB噪声系数:<2dB输出功率: 20dBm     

一种宽带接收射频前端设计与实现

本文设计了一种超外差架构的超宽带接收射频前端,工作频段覆盖400MHz~2000MHz,接收增益50dB,噪声系数小于6dB,中频输出频率70MHz,输出1dB压缩点大于18dBm,输出三阶交调节点大于30dBm,瞬时态范围大于55dB,测试结果和仿真结果基本一致,符合设计预期.     

一种高线性短波宽带混频器的设计

采用双平衡场效应管结构和阻抗匹配技术设计了一种适用于短波宽带接收机的高线性混频器,通过调整场效应管的沟道宽度和偏置电压优化了混频器的性能指标.该混频器射频输入频率为1.5～ 30 MHz,本振输入频率为71.5～100MHz,中频输出频率为70 MHz.测试结果表明:输入三阶截点高于40 dBm,变频损耗小于7dB,1 dB压缩点高于12 dBm,单边带噪声系数小于7dB.     

产品介绍

X—波段放大器中心频率;10GHz带宽:±500MHz增益;28dB输出功率: 20dBmKU-波段放大器中心频率:13～18GHz带宽:±250MHz增益:30dB噪声系数:<2dB输出功率: 20dBm     

产品介绍

X—波段放大器中心频率:10 GHz带宽:±500 MHz增益:28 dB输出功率; 20 dBmKu—波段放大器中心频率:13～18 GHz带宽:±250 MHz增益:30 dB噪声系数:<2 dB输出功率: 20 dBm微波、毫米波段高次倍频器倍频次数:×5、×6、×7倍频效率:5%杂波抑制:-40 dB     

A wideband SAW resonator and its application to a VCO for mobileradio transceivers

A new wideband SAW resonator has been developed for SAW-VCOs used in mobile radio communication transceivers. The resonator is based on a repeated structure of pairs of electrically connected IDTs, which provides a high Q and a wide frequency bandwidth. An experimental SAW-VCO module measuring 8×8 mm² offers a frequency-variation bandwidth of about 20 MHz, a C/N of 75 dB, and an output power of 3-4 dBm at 900 MHz, satisfying the specifications for Japanese MCA and business-use radio transceivers     

A merged CMOS LNA and mixer for a WCDMA receiver

A low-noise amplifier (LNA) and mixer circuit in 0.35-/spl mu/m CMOS operates at 2.1 GHz. Merging the LNA and mixer lowers the number of transistors in the signal path and thereby also the nonlinearity and power consumption. The circuit meets the specifications for a direct conversion wide-band code-division multiple access (WCDMA) receiver. Its noise figure is 3.4 dB (5kHz to 5MHz), the total conversion gain is 23 dB, the third-order input-referred intercept point is -1.5 dBm, and the local oscillator leakage to the antenna is less than -71 dBm. The fully differential circuit takes 8 mA from a 2.7-V supply.     

Ka波段频率合成器

本文介绍了一种基于毫米波谐波混频、中频锁相的Ｋａ波段频率合成器的设计方案及实现结果。合成器的频率范围为２６．５￣４０ＧＨｚ,输出功率大于＋５ｄＢｍ,频率步进值为１ＭＨｚ,相噪指标为（１０ｋＨｚ）〈－６５ｄＢｃ／Ｈｚ,杂散低于－５５ｄＢｃ。     

1.2-V Low-Power Multi-Mode DAC+Filter Blocks for Reconfigurable (WLAN/UMTS, WLAN/Bluetooth) Transmitters

Two versions of a baseband block composed by a 8-bit current-steering DAC and a fourth-order low-pass reconstruction filter are realized in a 0.13-$muhbox m$CMOS technology to be embedded in multistandard wireless transmitters. In order to satisfy the specifications of WLAN IEEE 802.11a/b/g, UMTS, and Bluetooth standards, the proposed devices can be digitally programmed, adjusting the DAC conversion frequency and the low-pass filter cut-off frequency. For the WLAN case, the DAC operating frequency and the filter bandwidth are set to 100 MHz and 11 MHz, respectively, for the UMTS case, they are equal to 50 MHz and 2.5 MHz, and for the Bluetooth case, they are equal to 50 MHz and 1 MHz. The first device is reconfigurable between WLAN and UMTS, and the second one between WLAN and Bluetooth. The two fabricated devices operate from a single 1.2-V supply voltage and occupy a 0.8$hbox mm^2$and 0.7$hbox mm^2$die area, respectively. The power consumption is optimized according to the operation mode and is 8 mW in WLAN mode, 8.4 mW in UMTS mode, and 5.4 mW in Bluetooth mode. For all the considered standards, the measured OIP3 is larger than 28 dBm, while the SFDR is 54 dB for WLAN, 61 dB for UMTS, and 63 dB for Bluetooth.     

3-V MSM-TIA for Gigabit Ethernet

The paper describes a 3-V monolithically integrated metal-semiconductor-metal photodetector (MSM-PD) and transimpedance amplifier (TIA) chip that is fully compliant with the Gigabit Ethernet receiver specification for the short-reach application (IEEE 802.3z 1000BASE-SX). Key typical performance specifications are -22 dBm sensitivity, 1200 MHz 3-dB bandwidth, 1300-V/W differential responsivity, and 120-mW power dissipation at 3 V. The chip is fabricated in a production 0.5-μm gate length GaAs MESFET technology and is packaged in a TO-46 header with a flat window and a ball-lens cap option     

应用于GSM/EDGE零中频接收机的CMOS射频前端

介绍了一个零中频接收机CMOS射频前端,适用于双带(900MHz/1800 MHz)GSM/EDGE;E系统.射频前端由两个独立的低噪声放大器和正交混频器组成,并且为了降低闪烁噪声采用了电流模式无源混频器.该电路采用0.13 μm CMOS工艺流片,芯片面积为0.9 mm×1.0 mm.芯片测试结果表明:射频前端在90...     

宽带接收机应用的超宽倍频程电调滤波器设计*

电调谐预选滤波器是宽带接收机的关键部件,直接影响到整机性能的好坏。设计了一种采用梳状滤波结构的电调滤波器,工作频段为200~600MHz,整个调谐范围内,1d B带宽约为12%,插入损耗小于3d B,输入二阶截点值大于60d Bm,输入三阶截点值大于20d Bm,输入输出端口驻波比小于1.8,测试和仿真结果吻合良好。该滤波器结构简单、体积小、工艺上易实现,还具有超宽倍频程的调谐范围及低插损、高截点值等优良电性能。     

基于MAX7033的315MHz/433 MHz ASK超外差式接收电路设计

所设计的315 MHz/433 MHz ASK超外差式接收机电路采用MAX7033高集成度、低功耗CMOS、超外差式幅移键控(ASK)接收机,接收频率范围为300MHz～450 MHz,射频信号输入范围为-114 dBm～0 dBm,数据速率可达33 kb/s曼彻斯特码率(66 kb/s NRZ).介绍了MAX7033的主要技术性能、内部结构、工作原理和应用电路.     

A 68% PAE, GaAs power MESFET operating at 2.3 V drain bias for lowdistortion power applications

A high-efficient GaAs power metal semiconductor field effect transistor operating at a drain voltage of 2.3 V has been developed for low distortion power applications. The device has been fabricated on an epitaxial layer with a high-low doped structure grown by molecular beam epitaxy. The MESFET with a gate length of 0.8 μm and a total gate width of 21.16 mm showed a maximum drain current of 5.9 A at V_gs =0.5 V, a knee voltage of 1.0 V and a gate-to-drain breakdown voltage of 28 V. The MESFET tested at a 2.3 V drain bias and a 900 MHz operation frequency displayed the best power-added efficiency of 68% with an output power of 31.3 dBm. The associate power gain at 20 dBm input power and the linear gain were 11.3 dB and 16.0 dB, respectively. The power characteristics of the device operating under a bias of 2 V exhibit power-added efficiency of 67% and output power of 30.1 dBm at an input power of 20 dBm. Two tone test measured at 900.00 MHz and 900.03 MHz shows that 3rd-order intermodulation and power-added efficiency at an output power of 27 dBm were -30.6 dBc and 36%, respectively, which are good for CDMA digital applications. A third-order intercept point and a linearity figure-of-merit were measured to be 49.5 dBm and 53.8, respectively     

RF 2000射频测量系统的设计

介绍了一种集频率计、功率计及S参数测量仪于一身的微波测控仪器．本系统工作在1600～2500MHz，可覆盖第二代移动通信所用的1800MHz，以及蓝牙、3G移动通信等将应用的频段．功率测量的动态范围为—9～6dBm．在测量S参数时可以工作在点频和扫频两种状态，测量范围为—30～5dB．另外本实验系统使用VCO作为白带的微波源，避免了外加微波源的繁琐．