（BaPb）O—Nd2O3—TiO2的微波介电性能

(BaPb)O-yNd2O3-zTiO2(y=0.8,0.9,1.0;z=3.0,3.5,3.7,3.9,4.5,5.0)陶瓷的介电常数随y增大而减小,随Z增大而增大改变NdZO3或TiO2的量都可以调整此系统的频率温度系数τf,获得τf≈0的瓷体     

La^3＋、Li^1＋对CaTiO3微波介电性能的影响

研究了La^3＋、Li^1＋取代对CaTiO3微波介电性能的影响。在1400℃以下烧结制备Ca1-xLa2x/3TiO3（简称CLT）微波陶瓷，分析了容差因子τ对谐振频率温度系数τf的影响。在1350℃烧结4h，可制备出εr=118，τf=＋2．95×10^-4/℃，Qf=10360GHz的CLT（x=0．4）微波陶瓷。以（1叫）Ca0.6La0.2667TiO3-yLi1/2Nd1/2TiO3为代表，对（1-y）Ca1-xLa2x/3TiO3叫-yLi1/2Nd1/2TiO3（简称CLLNT）系列材料的微波介电性能进行了探讨。随着烧结温度的提高，CLLNT（x=0．4）的εr略有下降，而Q·f值略有上升。随着y值的增加，CLLNT（x=0．4）的即Q·f、τf都下降。与CLT（X=0．4）相比，虽然CLLNT（x=0．4）的Q·f值下降了，但τf得到较大的改善，同时ε仍很高，保持在100以上。     

纳米ZrO_2/(1-n)SiO_2-nAl_2O_3介孔复合作的制备与光致发光

采用溶胶-凝胶法和超临界干燥技术制备了（1－n）SiO2－nAl2O3（n=0、001、0.1）混合气凝胶体系，并以此作为载体，成功地将纳米ZrO2粒子组装到（1—n）SiO2－nAl2O3介孔体系中，而形成纳米ZrO2／（1—n）SiO2－nAl2O3介孔复合材料．光致发光光谱研究表明，室温下以316um（392eV）波长激发时，纳米ZrO2粒子540um（230eV）荧光峰，在介孔复合体中将蓝移至400um（310eV）左右，蓝移量140um；其光致荧光峰的相对强度亦随Al2O3的掺入量不同而不同．对产生上述光谱性质变化的机理进行了初步探讨．     

低温烧结BaO-Sm2O3-TiO2系微波介质陶瓷材料的研究

利用传统的固相法制备BaO-Sm2O3-TiO2系陶瓷。通过复合添加氧化物ZnO、CuO和玻璃料Bi2O3-B2O3-ZnO-SiO2（BBZS），系统的烧结温度降至900℃。研究了玻璃料的添加量对介电性能的影响。按BaSm2Ti4O12＋1％（质量分数）ZnO＋1％（质量分数）CuO＋x％（质量分数）BBZS（0＜x≤30）配方，当x=25，预烧温度为1100℃和烧结温度为900℃时，有以下的微波特性：εr=60．51，Qf=2256GHz，τf=15．02×10^-6/℃，该陶瓷材料有望与纯Ag电极共烧，应用到LTCC领域。     

SrBi4Ti4O15铁电陶瓷A位掺杂改性研究

采用固相烧鲒法，以镧系元素La和Nd为掺杂离子，制备了不同掺杂量的SrBi4Ti4O15（SBTi）铁电陶瓷。X射线衍射谱显示样品呈随机取向的单一层状钙钛矿结构相。铁电测量显示适量的La和Nd掺杂使得SBTi的剩余极化（2P，）得到显著增加。对于SrBi4-xLaxTi4O15（SBLT—x），当x=0．25时，2P，达到极大值，为24．2μC／cm^2，对于SrBi4-yNdyTi4O15（SBNT—Y），当y=0．18时，2P，达到极大值，为25．8μC／cm^2，和未掺杂相比，分别增长近50％和56％。SBLT—x样品的矫顽场随掺杂量的增加而逐步减小，SBNT—Y的矫顽场在y=0．00到0．18之间几乎不变，在更大掺杂量下，随掺杂量的增加而逐步减小。掺杂引起材料中点缺陷浓度的降低和晶格畸变的减小，这两种因素的共同作用决定了刺余极化的变化。样品的变温介电谱显示，晶体的居里温度随掺杂量的增加而下降。在掺杂量大于0．75以后，SBLT—x和SBNT—y样品均出现驰豫铁电体的典型特征。     

(Y2O3,CaO)复合掺杂ZrO2材料的交流复阻抗研究

借助交流复抗技术对（1－0.08y-0.12x-ZrO2-0.08yY2O3-0.12xCaO(x y=1,x:0-1）系统在523－973K内的导电行为进行了研究,发现随着CaO含量增加,该系统的晶粒电导活化能的增加,而晶界电导活化能则呈现先降后升的趋势。本文对上述现象进行了初步分析。     

半化学法制备（Bi2-xNdx）（Zn1/3Nb2/3）2O7微波介电陶瓷与介电性能的研究

采用半化学法制备微波介电陶瓷（Bi2-xNdx）（Zn1/3Nb2/3）2O7（0≤x≤0.6），系统地研究了陶瓷的相结构及低频介电性能。结果表明：当Nd^3＋取代量较少伍≤0．25）时，样品的相结构仍然保持单斜焦绿石单相，随着Nd^3＋取代量的进一步增加，样品中出现立方焦绿石相，样品结构呈现单斜相与立方相的共存。同时，样品的介电性能随Nd^3＋取代量的变化为：介电常数先增大后减小，而介电损耗先减小后增大，在X=0.25处取得最佳电性能，分另1是εr=83，tanδ=0．0029（100kHz）。     

（Na1/2Bi1/2）TiO3无铅压电陶瓷的复合离子与补偿电价取代效应研究

采用传统陶瓷制备方法，制备出两种钙钛矿结构无铅新压电陶瓷材料（1-x）（Na1/2Bi1/2）TiO3-x（Na1/2Bi1/2）（Sb1/2Nb1/2）O3和（1-y）（Na1/2Bi1/2）TiO3-yBi（Mg2/3Nb1/3）O3。研究了复合离子与补偿电价取代对（Na1/2Bi1/2）TiO3陶瓷晶体结构和压电性能的影响。）（射线衍射分析表明，在所研究的组成范围内两种陶瓷材料均能够形成纯钙钛矿固溶体．陶瓷材料的介电常数-温度曲线显示两种陶瓷体系具有明显的弛豫铁电体特征．适量的复合离子与补偿电价取代都能提高材料的压电性能，在工=0．8％时，陶瓷的压电常数d33=97pC/N，厚度机电耦合系数kr=0．50，在y=0．7％时d33=94pC/N，y=0．9％时k1=0．46，为所研究组成中的最大值。两种陶瓷体系都具有较大的‰值和较小的kp值，具有较大的各向异性，是一种优良的、适合高频下使用的超声换能材料．     

快速凝固法制备（Ge1-ySnyTe）x（AgSbTe2）100-x化合物热电材料的电学性能

利用快速凝固方法制备了（GeTe）x（AgSbTe2）100-x（x=80，85，90）和（Ge1-ySnyTe）85（AgSbTe2）15（y=0.05，0．1，0．2，0．4）系列TAGS热电化合物。所得材料晶体结构属于菱形晶系，晶格常数随X的增加而减小，随Y的增加而增加。（GeTe）85（AgSbTe2）15样品有很好的电学性能，637K时功率因子可达3.40×10^-3W／m．K^2，在中温区（370-670K）功率因子最低值＞2．6×10^-3w／m．K^2。掺杂Sn提高了TAGS-85的电导率，但是Seebeck系数大幅下降导致了样品电功率因子下降。     

脉动射流对振荡管性能影响的实验研究

本文就充排气时间比、膨胀比（ε）、射流频率等对制冷效率叩的影响进行了实验研究,并进行了理论分析。结果表明,在ξ=O．0405—0．1842范围内,制冷效率（η）随ξ的增大而提高;η随射流频率（f）的变化出现多个峰值,且第二个峰值点的效率比第一个峰值点高;随着膨胀比（ε）的增大,η和fopt都略有增大,且低ε下的增幅比高ε下的大。     

Dielectric and ferroelectric properties of Bi(Zn1/2Ti1/2)O3-PbTiO3-PbZrO3 ternary ceramics

Ceramics of a new ternary solid solution system, xBi(Zn(1/2)Ti(1/2))O(3-yPbTiO(3)z)PbZrO(3) (xBZT-yPT-zPZ), with compositions along the solubility limit curve are prepared by solid-state reaction and sintering technique. Two morphotropic phase boundaries (MPBs) separating the orthorhombic and tetragonal (MPB(O-T)) phases and the tetragonal and rhombohedral (MPB(T-R)) phases, respectively, are observed with increasing z (0.10 ≤ x ≤ 0.21; 0 ≤ y ≤ 0.49). It is found that the transition from the ferroelectric to paraelectric phase becomes more diffuse with the addition of BZT into the PZT solid solution. Enhanced dielectric and ferroelectric properties appear at MPB(R-T), which exists over a wide composition region (0.45 ≤ z ≤ 0.6), as revealed by X-ray diffraction and dielectric measurements. The dielectric constant reaches a maximum value (ε' = 1250) on the tetragonal majority side of the MPB. The highest remnant polarization (P(r) = 34.2 μC/cm(2)) is found in the composition at the center of the MPB, where the rhombohedral and tetragonal phases coexist in almost equal quantities.     

纳米Al2O3/聚醚砜-环氧树脂复合材料的介电性能及热稳定性能

本实验制备了纳米Al_2O_3/聚醚砜-环氧树脂复合材料,考察了不同纳米氧化铝和聚醚砜的用量对复合体系力学和介电性能的影响,并对其热稳定性能进行了研究。结果表明:当添加1phr纳米氧化铝(Nano-Al_2O_3)和5phr聚醚砜(PES)时,三元复合材料EP/5PES/1Al_2O_3的拉伸强度提高到58 MPa,断裂伸长率达到13%,冲击强度达到16.2kJ/m~2,相比纯环氧树脂分别提高了61.1%、20.3%和8.0%。而且在100Hz的室温测试条件下,EP/5PES/1Al_2O_3材料的介电常数和介电损耗分别达到7.6和0.016,较纯环氧树脂均有一定幅度的增加。热重分析(TG)结果表明,EP/5PES/1Al_2O_3复合材料的初始分解温度为358℃,比纯环氧树脂提高了14℃,说明热稳定性有较大幅度的提高。     

掺ZBS玻璃低温烧结ZnNb2O6微波介质陶瓷的研究

研究了ZnO-B2 O3-SiO2(ZBS)玻璃料对ZnNb2O6微波介质陶瓷烧结特性和介电性能的影响.结果表明,ZBS玻璃料形成的液相加速了颗粒间的传质,促进了烧结,能使ZnNb2O6陶瓷的烧结温度有效地降低至950℃.随着ZBS含量的增加,样品中出现了第二相,且气孔被包裹在晶粒内部难以逃脱出来,导致样品的缺陷和损耗增加,从而降低介电性能.掺杂1%ZBS的ZnNb2O6陶瓷在950℃保温4h,能获得优异的综合介电性能:ε=23.56、Q·f=18482GHz、τf=-28.8×10￣6/℃.     

含碱金属离子的CaO-B2O3-SiO2系玻璃陶瓷性能研究

研究了碱金属氧化物对CaO-B2O3-SiO2(CBS)系玻璃陶瓷的软化析晶温度以及材料的烧结、介电等方面性能的影响。结果表明:对于添加双碱的CBS玻璃,随双碱金属离子半径增大软化温度呈升高趋势,而析晶峰值温度呈降低趋势。Na2O和K2O添加对于改善CBS系玻璃陶瓷烧结性能效果更好,试样内部晶粒分布均匀、结构致密。烧成试样主晶相均为CaSiO3,CaB2O4和石英。试样的介电常数和介电损耗随频率的增加而减小。随着测试温度的升高,试样的介电常数略有增加,而介电损耗呈降低趋势。     

Phase-transition temperatures and piezoelectric properties of (Bi1/2Na1/2)TiO3-(Bi1/2Li1/2)TiO3-(Bi1/2K1/2)TiO3 lead-free ferroelectric ceramics.

The phase-transition temperatures and piezoelectric properties of x(Bi(1/2)Na(1/2))TiO3-y(Bi(1/2)Li(1/2))TiO3-z(Bi(1/2)K(1/2))TiO3 [x + y + z = 1] (abbreviated as BNLKT100(y)-100(z)) ceramics were investigated. These ceramics were prepared using a conventional ceramic fabrication process. The phase-transition temperatures such as depolarization temperatures T(d), rhombohedraltetragonal phase transition temperature T(R-T), and dielectric-maximum temperature T(m) were determined using electrical measurements such as dielectric and piezoelectric properties. The X-ray powder diffraction patterns of BNLKT100(y)-100(z)) show the morphotropic phase boundary (MPB) between rhombohedral and tetragonal at approximately z = 0.20, and the piezoelectric properties show the maximum at the MPB. The electromechanical coupling factor k(33), piezoelectric constant d(33) and T(d) of BNLKT4-20 and BNLKT8-20 were 0.603, 176 pC/N, and 171 degrees C, and 0.590, 190 pC/N, and 115 degrees C, respectively. In addition, the relationship between d33 and Td of tetragonal side and rhombohedral side for BNLKT4-100z and BNLKT8-100z were presented. Considering both high Td and high d(33), the tetragonal side of BNLKT4-100z is thought to be the superior composition. The d(33) and T(d) of BNLKT4-28 were 135 pC/N and 218 degrees C, respectively. Moreover, this study revealed that the variation of T(d) is related to the variation of lattice distortion such as rhombohedrality 90-alpha and tetragonality c/a.     

BaTiO3-ZnNb2O6陶瓷介电及储能性能研究

采用固相法制备(1-x)BaTiO₃-xZnNb₂O₆ (x=0.5mol%, 1mol%, 1.5mol%, 2mol%, 3mol%, 4mol%) (简称BTZN)陶瓷, 研究了BTZN陶瓷的烧结温度、结构、介电性能和铁电性能。BTZN陶瓷烧结温度随着ZnNb₂O₆含量增加逐渐降低。XRD结果表明当ZnNb₂O₆含量达到3mol%时出现第二相Ba₂Ti₅O₁₂。介电测试结果表明随ZnNb₂O₆含量的增加, BTZN陶瓷介电常数逐渐减小, 而介电常数的频率稳定性逐渐增强。介电温谱表明所有BTZN陶瓷均符合X8R电容器标准。BTZN陶瓷的极化强度值随着ZnNb₂O₆含量的增加逐渐降低。当x=4mol%时, BTZN陶瓷获得240 kV/cm的击穿电场和1.22 J/cm ³的可释放能量密度。     

正极材料zLi2MnO3·（1-z）LiNi0.4Mn0.4Co0.2O2的合成与性能

富锂锰过渡金属层状正极材料以其成本低、安全、容量高受到广泛关注,X射线衍射（XRD）和电化学性能测试显示以共沉淀结合煅烧成功合成富锂层状正极材料zLi2MnO3.（1-z）LiMn0.4Ni0.4Co0.2O2（z=0.2,0.4,0.6）。其中z=0.4组分的放电容量达到210mAh/g（2-4.8V,0.05C）,远高于z=0.6组分,而经20个充放电循环的稳定性也优于z=0.2组分。微分容量分析表明z=0.2组分中因Ni/（Co＋Mn）比值较大和Li2MnO3含量较少可能导致其容量逐渐衰减。z=0.6则因所含LiMn0.4Ni0.4Co0.2O2量较少,造成其放电容量较低;z=0.4拥有最佳Li2MnO3及LiMn0.4Ni0.4Co0.2O2组合使其容量和循环性能最好。     

Thermal, structural, optical, and dielectric properties of (100 - x)Li2B4O7 - x(BaO-Bi2O3-Nb2O5) glasses and glass-nanocrystal composites

Transparent glasses in the system (100 - x)Li2B4O7 - x(BaO-Bi2O3-Nb2O5) (x = 10, 20, and 30) were fabricated via the conventional melt-quenching technique. The amorphous and glassy characteristics of the as-quenched samples were established by the differential thermal analyses (DTA) and X-ray powder diffraction (XRD) studies. Glass-nanocrystal composites (GNCs) i.e., the glasses embedded with BaBi2Nb2O9 (BBN) nanocrystals (10-50 nm) were produced by heat-treating the as-quenched glasses at temperatures higher than 500 degrees C. Perovskite BBN phase formation through an intermediate fluorite-like phase in the glass matrix was confirmed via XRD and transmission electron microscopic (TEM) studies. The optical transmission properties of these GNCs were found to have a strong compositional (BBN content) dependence. The refractive index (n = 1.90) and optical polarizability (alphao = 15.3 x 10(-24) cm3) of the GNC (x = 30) were larger than those of as-quenched glasses. The temperature dependent dielectric constant (epsilonr) and loss factor (D) for the glasses and GNCs were determined in the 100-40 MHz frequency range. The epsilonr was found to increase with increase in heat-treatment temperatures, while the loss of the glass-nanocomposites was less than that of as-quenched glasses. The sample heat-treated at 620 degrees C/1 h (x = 30) exhibited relaxor behavior associated with a dielectric anomaly in the 150-250 degrees C temperature range. The frequency dependence of the dielectric maximum temperature was found to obey the Vogel-Fulcher relation (Ea = 0.32 eV and Tf = 201 K).     

Nonlinear Electrical Properties of SnO_2-Li_2O-Nb_2O_5 Varistor System

The electrical properties of (Nb, Li)-doped SnO2 ceramics as a new varistor material were investigated. The sample 97.95%SnO2·0.50%Li2O·0.05%Nb2O5 (mol fraction) sintered at 1450= possess the highest density (ρ=6.77 g/cm3) and nonlinear electrical coefficient (α=11.6). The substitution of Sn4+ with Li+ increases the concentration of oxygen vacancies, together with the formation of solid solution, which will increase the sintering rate greatly and decrease the optimized sintering temperature. The substitution of Sn4+ with Li+ and the variation of temperature play very important effects on the densities, dielectric constant, nonlinear electrical properties and other characteristics of the samples. The properties of the grain boundary barrier and the microstructural characteristics were investigated to ensure the effect of the dopants and the temperature. A grain boundary defect barrier model was used to illustrate the grain boundary barriers formation in SnO2-Li2O-Nb2O5 varistors.