Ka波段AlGaAs/InGaAs低噪声PHEMT异质材料结构的计算机优化与实验结果

讨论了毫米波低噪声ＰＨＥＭＴ的设计要点，藕助Ｓｃｈｒｏｅｄｉｎｇｅｒ／Ｐｏｉｓｓｏｎ方程及器件方程，进行了Ｋａ波段ＡｌＧａ／ＩｎＧａＡｓ低噪声ＰＨＥＭＴ用异质层数值计算及ＣＡＤ优化，确定出分子束外延ＭＢＥ时诸层的最佳组分、浓度、与厚度、上述优化分析的结果用于器件的实验研制，取得了３４．４ＧＨｚ下噪声系数（ＮＦ）１．９２ｄＢ、相关增益Ｇａ６．５ｄＢ的国内最好结果。     

双平面掺杂AlGaAs／InGaAs功率PHEMT

双平面掺杂ＡｌＧａＡｓ／ＩｎＧａＡｓ功率ＰＨＥＭＴ陈效建，刘军，李拂晓，郑雪帆，华培忠（南京电子器件研究所，２１００１６）Ｄｏｕｂｌｅ－ｐｌａｎａｒ－ｄｏｐｅｄＡｌＧａＡｓ／ＩｎＧａＡｓＰｏｗｅｒＰＨＥＭＴ￥ＣｈｅｎＸｉａｏｊｉａｎ；ＬｉｕＪｕｎ；Ｌ...     

MBE生长的高质量AlGaAs/InGaAs双δ掺杂PHEMT结构的材料

用 MBE方法制备的 PHEMT微结构材料 ,其 2 DEG浓度随材料结构的不同在 2 .0— 4.0× 1 0 12 cm- 2 之间 ,室温霍耳迁移率在 50 0 0— 650 0 cm2 · V- 1· s- 1之间 .制备的 PHEMT器件 ,栅长为 0 .7μm的器件的直流特性 :Idss～ 2 80 m A/mm,Imax～ 52 0— 580 m A/mm,gm～ 32 0— 40 0 m S/mm,BVDS>1 5V( IDS=1 m A/mm) ,BVGS>1 0 V,微波特性 :P0 ～ 60 0— 90 0 m W/mm,G～ 6— 1 0 d B,ηadd～ 40— 60 % ;栅长为 0 .4μm的器件的直流特性 :Imax～ 80 0 m A/mm,gm>40 0 m S/mm.     

增强型InGaP/AlGaAs/InGaAs PHEMT小信号等效电路参数的提取

介绍了增强型InGaP／AlGaAs／InGaAs PHEMT小信号等效电路中元件参数值的提取方法，并利用IC-CAP软件EEHEMT1模型提取了参数．利用ADS软件验证了提参结果，ADS仿真的直流I-V曲线和S参数与实测结果基本吻合．结果表明EEHEMT1模型可以用于提取增强型PHEMT参数，并且具有可操作性．     

12 GHz GaAs/InGaAs异质结双栅功率场效应晶体管

报道了GaAs／InGaAs异质结双杨功率场效应晶体管的设计考虑、器件结构和制作，讨论了所采用的一些关键工艺，给出了器件性能。在12GHz下，最大输出功率≥130mW，增益≥12dB，功率附加效率≥30％。     

InGaAs／GaAs异质结构材料及器件应用

概述了ＩｎＧａＡｓ／ＧａＡｓ异质结构材料用于制作微波器件的优越性，叙述了材料的ＭＢＥ生长、输运特性和掺杂分布，以及用于制作Ｋｕ波段低噪声高增益ＨＦＥＴ的结果：栅长０．５μｍ，１２ＧＨｚ下噪声系数０．９３ｄＢ，相关增益９ｄＢ。     

Ka波段功率PHEMT的设计与研制

报道了Ｋａ 波段功率ＰＨＥＭＴ的设计和研制结果。利用双平面掺杂的ＡｌＧａＡｓ／ＩｎＧａＡｓＰＨＥＭＴ材料,采用０．２ μｍ 的Ｔ型栅及槽型通孔接地技术,研制的功率ＰＨＥＭＴ的初步测试结果为：Ｉｄｓｓ：３６５ ｍ Ａ／ｍ ｍ ;ｇｍ ０：３２０ ｍ Ｓ／ｍ ｍ ;Ｖｐ：－ １．０～－ ２．０ Ｖ。总栅宽为７５０ μｍ 的功率器件在频率为３３ ＧＨｚ时,输出功率大于２８０ ｍ Ｗ,功率密度达到３８０ ｍ Ｗ／ｍ ｍ ,增益大于６ ｄＢ。     

低压低能耗应用的InGaAs／AlGaAsPHEMT单片微波SPDT开关

提出了微波频率下ＰＨＥＭＴ在作开关运用时一种简化的等效电路模型，其模型参数可从对实际ＰＨＥＭＴ芯片的在片微波测试方便地确定。对于电路中元件采用不同尺寸组合情形下所进行的开关性能（插入损耗，隔离度，输入及输出反射损耗）的模拟计算表明，与实验结果符合良好。在对串／并联ＰＨＥＭＴ型ＳＰＤＴ开关的ＣＡＤ优化设计基础上进行了ＩｎＧａＡｓ／ＡｌＧａＡｓＰＨＥＭＴ单片ＳＰＤＴ微波开关的实验研制。从研制的ＭＭＩＣ芯片上在片测试得到的结果为：对应新的个人通信频段的应用，在０～２ＧＨＺ范围内，插入损耗＜１．０ｄＢ，隔离度＞５０ｄＢ，输入及输出反射损耗均优于２４ｄＢ。研制的这种高性能单片开关还可在低至－２．０Ｖ的控制电压下工作。     

增强型InGaP/AlGaAs/InGaAs PHEMT小信号等效电路参数的提取

介绍了增强型InGaP/AlGaAs/InGaAs PHEMT小信号等效电路中元件参数值的提取方法,并利用IC-CAP软件EEHEMT1模型提取了参数.利用ADS软件验证了提参结果,ADS仿真的直流I-V曲线和S参数与实测结果基本吻合.结果表明EEHEMT1模型可以用于提取增强型PHEMT参数,并且具有可操作性.     

增强型InGaP／AlGaAs／InGaAs PHEMT栅退火工艺

针对InGaP/AlGaAs/lnGaAs PHEMT器件,进行了Ti/Pt/Au和Pt/Ti/Pt/Au两种栅金属结构的退火实验,通过实验研究比较,得到了更适用于增强型器件的退火工艺,利用Ti/Pt/Au结构,在320℃退火40min,使器件阈值电压正向移动大约200mV,从而成功制作了高成品率的稳定一致的增强型器件,保证了增强型器件阈值电压在零以上.     

增强型InGaP/AlGaAs/InGaAs PHEMT栅退火工艺

针对InGaP/AlGaAs/lnGaAs PHEMT器件,进行了Ti/Pt/Au和Pt/Ti/Pt/Au两种栅金属结构的退火实验,通过实验研究比较,得到了更适用于增强型器件的退火工艺,利用Ti/Pt/Au结构,在320℃退火40min,使器件阈值电压正向移动大约200mV,从而成功制作了高成品率的稳定一致的增强型器件,保证了增强型器件阈值电压在零以上.     

A new empirical large-signal model for enhancement-mode AlGaAs/InGaAs pHEMTs

We propose a new large-signal model for AlGaAs/InGaAs pHEMTs, which can simulate the device microwave output power, non-linear characteristics at arbitrary bias points. This model includes a new drain current equation, which is extracted from its derivatives. In addition, gate-to-source and gate-to-drain capacitances are also characterized versus the function of gate and drain biases. The parameter extraction procedure is addressed for the enhancement-mode pHEMTs, which offers an attractive solution for handset power amplifier application because of its positive bias characteristics. Finally, measured and model-predicted dc I–V, S-parameters, and power performance have been compared.     

Power improvement of AlGaAs/InGaAs PHEMTs by using low gamma radiation dose

This paper shows the possibility to improve DC and RF electrical performances of AlGaAs/InGaAs PHEMTs by using low gamma radiation dose. The drain-source saturation current and the DC transconductance increase when the devices are irradiated with a gamma dose of 42.8 krad(GaAs) and then remain constant up to 0.85 Mrad(GaAs). This improvement is attributed to a reduction of access resistances. In the same time, the Schottky diode and the current-gain cut-off frequency of these components are not degraded by the gamma irradiation. Moreover, the maximum output power density is improved by 18%. This paper demonstrates that it is possible to improve the component electrical performances by using an original method.     

Detection of lead ions with AlGaAs/InGaAs pseudomorphic high electron mobility transistor

Lead poisoning is a serious environmental concern, which is a health threat. Existing technologies always have some drawbacks, which restrict their application ranges, such as real time monitoring. To solve this problem, glutathione was functionalized on the Au-coated gate area of the pseudomorphic high electron mobility transistor (pHEMT) to detect trace amounts of Pb²⁺. The positive charge of lead ions will cause a positive potential on the Au gate of the pHEMT sensor, which will increase the current between the source and the drain. The response range for Pb²⁺ detection has been determined in the concentrations from 0.1 pmol/L to 10 pmol/L. To our knowledge, this is currently the best result for detecting lead ions.