共查询到20条相似文献,搜索用时 156 毫秒
1.
2.
3.
4.
金属诱导横向晶化技术(MILC)由于具有晶化温度低、晶化颗粒大等优点而获得了快速发展。阐述了金属诱导横向晶化非晶硅薄膜的晶化机理、晶化效果及影响晶化效果的主要参数,并介绍了基于多种辅助措施,如离子掺杂、电磁场辅助、微波退火、激光退火、氮硅化合物覆盖法和焦耳热升温法等方法,以优化金属诱导横向晶化非晶硅薄膜。辅助措施均有利于增强晶化效果,更易获得大面积无孪晶多晶硅薄膜,并具有较高的载流子迁移率。最后提出采用微纳金属阵列结构调控晶化能量,实现低温、高速、大晶粒直径的多晶硅薄膜制备新方法。 相似文献
5.
Ni金属诱导晶化非晶硅(a-Si:H)薄膜 总被引:1,自引:1,他引:0
对在氢化非晶硅薄膜(a-Si:H)上溅射金属Ni的样品进行金属诱导晶化(MIC)/金属诱导横向晶化(MILC),制备多晶硅薄膜(p-Si)的上艺及薄膜特性进行了研究。XRD测最结果表明非晶硅在500℃退火1h后就已经全部晶化。金属诱导晶化的优选晶向为(220).而且晶粒随退火时间的延长而长大。非晶硅薄膜样品500℃下退火6h后的扫描电镜照片显示,原金属镍覆盖区非晶硅全部晶化.晶粒均匀.平均晶粒大小约为0.3μm,而且已经发生横向晶化。EDS测试Ni在晶化的非晶硅薄膜中的原子百分含量分析表明,金属Ni在MILC过程中的作用只是催化晶化.除了少量残留在MILC多晶硅中外.其余的Ni原子都迁移至晶化的前沿。500℃下退火20h后样品的Raman测试结果也表明.金属离子向周边薄膜扩散.横向晶化了非晶硅薄膜。 相似文献
6.
7.
8.
9.
10.
非晶硅薄膜的镍诱导横向晶化工艺及其特性 总被引:4,自引:3,他引:1
报道了镍诱导非晶硅薄膜的晶化技术 ,探讨了镍诱导晶化机理 .详细调查了诱导晶化时间和温度对晶化速率的影响 ,并用 Raman、AFM和 TEM等测试了材料的特性 .实验结果发现用该方法可以获得较大晶粒的多晶 ;在晶化温度为 6 2 5℃左右时晶体横向晶化速率最高 .如要获得较长的晶体 ,低温退火则比较有利 相似文献
11.
12.
Man Wong Zhonghe Jin Bhat G.A. Wong P.C. Hoi Sing Kwok 《Electron Devices, IEEE Transactions on》2000,47(5):1061-1067
Process and material characterization of the crystallization of amorphous silicon by metal-induced crystallization (MIC) and metal-induced lateral crystallization (MILC) using evaporated Ni has been performed. An activation energy of about 2 eV has been obtained for the MILC rate. The Ni content in the MILC area is about 0.02 atomic %, significantly higher than the solid solubility limit of Ni in crystalline Si at the crystallization temperature of 500°C. A prominent Ni peak has been detected at the MILC front using scanning secondary ion mass spectrometry. The MIC/MILC interface has been determined to be highly defective, comprising a continuous grain boundary with high Ni concentration. The effects of the relative locations of this interface and the metallurgical junctions on TFT performance have been studied 相似文献
13.
研究了用Ni进行金属诱导横向晶化(MILC)制备大尺寸多晶硅晶粒的结构改进和工艺条件优化,改进了MILC的结构,通过在埋层氧化层上开出与衬底相连的籽晶区,减少了大晶粒多晶硅中的缺陷分布;同时在前人的基础上优化了退火温度及时间,用Secco腐蚀液观察了晶粒大小和间界分布,最后得到了质量更好的大晶粒多晶硅,其大小在70~80μm左右.同时讨论了MILC后生成的NiSi2的去除方法,成功地去除了高温退火后生成的NiSi2,大大减小了Ni在多晶硅层中的分布,保证了将MILC方法成功应用于实现深亚微米器件的研究中. 相似文献
14.
研究了用Ni进行金属诱导横向晶化(MILC)制备大尺寸多晶硅晶粒的结构改进和工艺条件优化,改进了MILC的结构,通过在埋层氧化层上开出与衬底相连的籽晶区,减少了大晶粒多晶硅中的缺陷分布;同时在前人的基础上优化了退火温度及时间,用Secco腐蚀液观察了晶粒大小和间界分布,最后得到了质量更好的大晶粒多晶硅,其大小在70~80μm左右.同时讨论了MILC后生成的NiSi2的去除方法,成功地去除了高温退火后生成的NiSi2,大大减小了Ni在多晶硅层中的分布,保证了将MILC方法成功应用于实现深亚微米器件的研究中. 相似文献
15.
报道了镍诱导非晶硅薄膜的晶化技术,探讨了镍诱导晶化机理.详细调查了诱导晶化时间和温度对晶化速率的影响,并用Raman、AFM和TEM等测试了材料的特性.实验结果发现用该方法可以获得较大晶粒的多晶;在晶化温度为625℃左右时晶体横向晶化速率最高.如要获得较长的晶体,低温退火则比较有利. 相似文献
16.
使用金属镍诱导非晶硅晶化(MIC:metal-induced crystallization)技术,获得了低温(<550℃)多晶硅.通常在镍覆盖区以外的晶化硅更加有用,这一技术被称为金属诱导横向晶化(MILC:metal-induced lateral crystallization)技术.通过对结晶动力学过程和材料特性的研究,提出了可同时适用于镍覆盖区和相连非覆盖区金属诱导结晶的同一晶化机制.虽然MILC多晶硅的材料特性明显优于固相晶化多晶硅的材料特性,薄膜晶体管沟道中存在MIC/MILC 的界面所形成的横向晶界会明显的降低其性能.若将这些界面从沟道中去除掉,即可获得可满足液晶和有机发光二极管等显示器进行系统集成所需的高性能器件. 相似文献
17.
The effect of Pd on the growth rate of metal-induced lateral crystallization (MILC) from Ni seed and the electrical properties of thin-film transistors (TFTs) fabricated on the films crystallized by MILC were investigated. When the Pd metal is placed on the amorphous-silicon/Ni-seed layer, the MILC growth rate is two to three times faster than that of conventional Ni-MILC, without any degradation of TFTs. These results were explained by a stress that is generated by the formation of Pd2Si 相似文献
18.
Enhanced metal-induced lateral crystallization (MILC) using a pulsed rapid thermal annealing (PRTA) technique to form a large-grain polysilicon layer has been investigated. By applying high temperature for a short period of time, MILC is enhanced while the background solid phase crystallization is suppressed. Experimental results show that the PRTA method is capable of increasing the rate of directional crystallization and improving the crystal quality of the recrystallized polysilicon layer. The overall annealing time and total thermal budget to achieve similar grain size as in constant temperature annealing is also reduced. 相似文献
19.
Nam-Kyu Song Min-Sun Kim Shin-Hee Han Young-Su Kim Seung-Ki Joo 《Electron Devices, IEEE Transactions on》2007,54(6):1420-1424
It has been known that adjacent Pd enhances the crystallization rate in Ni metal-induced lateral crystallization (Ni-MILC) and this knowledge has been used to fabricate the unidirectional MILC thin-film transistors (TFTs), which eliminate the boundary formed at the center of TFT channel in a normal MILC TFTs. It is discovered that the MILC/MILC boundary (MMB) is responsible for the high leakage current and low field- effect mobility. The electrical properties of unidirectional MILC TFTs (Width/Length = 10/10 mum) improved considerably comparing to those of MILC TFTs containing the MMB. The leakage current and field-effect mobility, which have been regarded as obstacles for industrialization of the MILC process, measure to be 2.1 X 10-11 A and 83 cm2/ V ldr s, respectively. 相似文献
20.
Leakage current of poly-Si TFT fabricated by a metal induced lateral crystallization(MILC) process was investigated in terms of metal contamination and crystallization mechanisms. MILC poly-Si TFTs showed a higher leakage current than those by the solid phase crystallization method at high drain voltages. It turned out that the Ni rich phases in the depleted junction region played the role of trapping and recombination centers to generate the leakage currents and that the leakage current was generated by thermionic field emission. The leakage current could be drastically reduced to 5 pA/μm at VGS=0 V and VDS=15 V after the exclusion of the Ni-rich phase from the junction region by a Ni offset MILC process. 相似文献