芯片键合技术在光电子学中的最新研究进展

芯片键合技术在光电子学中的应用研究可概括为两大方面： 一、将波长（１．３～１．５μｍ）激光器与硅大规模电路集成，从而实现光电子集成．这是光纤通讯和光二连所渴求的．在长波长区光纤损耗小，通讯距离长． 对以ＩｎＰ为基片的激光波长，硅是透明的，因此，通过硅基间器件能实现光互连．１９９５年Ｋ．Ｍｏｒｉ等人报道了硅基 １．５５ μｎｍ的 ＩｎＰ激光器显示优良的伏安特性．在键合界面未见高阻层．激光器在室温脉冲条件下的阈值电流密度（Ｊｔｈ）为 １．７ ｋＡ／ｃｍ２，这与以 ＩｎＰ为基片的激光器Ｊｔｈ相近． １９９９年 …     

面阵IRCCD摄像芯片用折射微透镜阵列的离子束刻蚀制作

采用氩离子束刻蚀制作与一种１２８×１２８元ＰｔＳｉＩＲＣＣＤ摄像芯片匹配的单片硅折射微透镜阵列．所制成的微小光学阵列元件的填充系数高于９５％,每单元硅折射微透镜为矩底拱面形,其近轴光（３～５μｍ光谱波段）的焦距约为８０μｍ,给出了硅折射微透镜阵列的表面探针和扫描电子显微镜测试结果     

全硅集成光学—理论与工艺（Ⅱ）（续一）：第二讲 1.3～1.6μm硅光探测器

全硅集成光学──理论与工艺（Ⅱ）（续一）──第二讲１．３～１．６μｍ硅光探测器李国正（副教授）李道全（西安交通大学电子工程系，西安７１００４９）赵策洲（西安电子科技大学历电子所，西安７１００７１）１引言由于本征硅材料的长波吸收极限为１．１μｍ，因此用...     

硅基波导、光探测器和CMOS电路的集成

对于集成光学器件和微电子电路制作，应用了驻波监控指示技术（ＳＷＡＭＩ）、局部氧化技术（ＬＯＣＯＳ）、光波导和探测器的平接、漏波，以及镜耦合技术。文章介绍了硅基光波导、光探测器和ＣＭＯＳ电路的单片集成技术。讨论了集成工艺以及静态和动态测量结果     

高跨导常断GaN MODFET

成功地制作出常断ＧａＮ基ＭＯＤＦＥＴ（调制掺杂ＦＥＴ）。该器件的栅长和沟道长度分别为３和５μｍ，其非本征跨导高达１２０ｍＳ／ｍｍ，在正栅偏压为３Ｖ时其电流为３００ｍＡ／ｍｍ。该跨导值与先前报道的栅长分别为１和０．２３μｍ、跨导分别为４５和２４ｍＳ／ｍｍ的器件相比，是相当不错的。     

硅基微静电马达

本文介绍了硅基微静电马达的设计考虑、制作工艺和测量结果。该马达结构上的改进主要体现在两方面：通过在微马达转子的下面集成光伏器件实现了对马达转速的片内检测，这对于研究微马达动力学和构成ＭＥＭＳ有着重要的意义；利用复合膜牺牲层技术制成了一种锥状轴承，该轴承能够减小马达的摩擦力矩。微静电马达转子直径分１００μｍ和１２０μｍ两种，定子与转子极之间的空气间隙有２μｍ、３μｍ和４μｍ三种。初步测量结果表明该马     

LP－MOCVD制作InGaAs／InPPIN光电二极管

采用ＬＰ－ＭＯＣＶＤ制作了ＩｎＧａＡｓ／ＩｎＰ平面型ＰＩＮ光电二极管。器件光敏面直径为７５μｍ，采用Ｚｎ扩散形成ＰＮ结，－６Ｖ偏置下其暗电流低达８～１３ｎＡ；反向击穿电压为６０Ｖ（１μＡ）。在没有增透膜时，对１．３μｍ注入光响应度为０．５６Ａ／Ｗ，光谱响应范围为０．９０～１．７０μｍ。     

微型Fabry-Perot机械式光调制器研究

讨论了有关硅基微机械式光调制技术的基本原理和一些相关的制作方法,尝试制作了多层膜光反射调制器样品,并进行了初步测试.     

一种硅基集成微晃动马达

本文介绍一种硅基集成微晃动马达．该微马达的制作工艺非常简单，主要包括四次光刻（共三块版）、两次ＬＰＣＶＤ多晶硅膜淀积和两次ＬＴＯＳｉＯ２膜淀积．微马达转子和定子由厚度为４．２μｍ的多晶硅膜形成，转子与定子之间的空气间隙为２．０—２．５μｍ，转子的半径为４０—５０μｍ．初步测量结果表明，微晃动马达的最低驱动电压为４９Ｖ，最高转速估计可达６００ｒｐｍ。     

变形光束的优化增大了焦深

不用离轴滤波器增大焦深的新型曝光方法已研制成功，为ＫｒＦ（２４８ｎｍ）准分子激光光刻技术生产第二代６４ＭＤＲＡＭ器件增添了活力。用这种新方法制作０．３５μｍ的Ｘ、Ｙ向及斜向的图形，可使焦深增大４５％以上。对实际的０．３０μｍ规格以下的器件，用四极照明和环形照明都不可能获得线问对图形的公共焦深。对这种器件，采用新型的变形光束（ＭＢＩ）曝光方法，焦深可增大到１．１μｍ以上。     

Interfacial reaction and shear strength of SnAgCu-xNi/Ni solder joints during aging at 150 °C

The interfacial microstructure and shear strength of Sn3.8Ag0.7Cu-xNi (SAC-xNi, x = 0.5, 1, and 2) composite solders on Ni/Au finished Cu pads were investigated in detail after aging at 150 °C for up to 1000 h. The interfacial characteristics of composite solder joints were affected significantly by the weight percentages of added Ni micro-particles and aging time. After aging for 200 h, the solder joints of SAC, SAC-0.5Ni and -1Ni presented duplex intermetallic compound (IMC) layers regardless of the initial interfacial structure on as-reflowed joints, whose upper and lower IMC layers were comprised of (CuNi)₆Sn₅ and (NiCu)₃Sn₄, respectively. Only a single (NiCu)₃Sn₄ IMC layer was ever observed at the SAC-2Ni/Ni interface on whole aging process. Based on the compositional analysis, the amount of Ni within the IMC regions increased as the proportion of Ni addition increased. The IMC (NiCu)₃Sn₄ layer thickness on the interface of SAC and SAC-0.5Ni grew more slowly when compared to that of SAC-1Ni and -2Ni, while for the (CuNi)₆Sn₅ layer the reverse is true. Except the IMCs sizes are increased with increased aging time, the interfacial IMCs tended to transfer their morphologies to polyhedra. In all composite joints testing, the shear strengths were approximately equal to non-composite joints. The fracturing observed during shear testing of composite joints occurred in the bulk solder, indicating that the SAC-xNi/Ni solder joints had a desirable joint reliability.     

有机发光二极管中ADN掺杂ErQ的1.54μm电致发光

自行设计了基于8-羟基喹啉铒(ErQ)为发射层(EMLs)和二硝酰胺铵(ADN)为蓝光主体材料的近红外有机发光二级管.器件的基本结构为(p-Si/NPB/EML/Bphen/Bphen:Cs2CO3/Sm/Au),设计并比较了三套不同发射层结构(ErQ/ADN为双层结构器件,(ErQ/ADN)×3为多层结构器件,ErQ:ADN为掺杂结构器件)的器件.三组器件在一定的偏压下,均可发出1.54μm的光,对应三价铒离子4I13/2→4I15/2的跃迁.其中,ADN:ErQ(1∶1)掺杂结构的近红外电致发光强度是ADN/ErQ双层结构中的三倍.此外,不同掺杂浓度的ADN:ErQ复合膜做了以下表征:吸收谱、光致发光谱和荧光寿命谱.实验结果证实了在近红外电致发光过程中存在从ADN主体分子到ErQ发射分子的高效率的能量转移.     

Emerging interconnects: a state-of-the-art review and emerging solutions

Aluminium was a primary material for interconnection in integrated circuits (ICs) since their inception. Later, copper was introduced as interconnect material which has better metallic conductivity and resistance to electromigration. As the aggressive technology scaling continues, the copper resistivity increased because of size effects, which causes increase in delay, power dissipation and electromigration. The need to reduce the resistor-capacitor??????? delay, dynamic power utilisation and the crosstalk commotion is as of now the fundamental main impetus behind the presentation of new materials. The purpose of this paper is to do a survey of interconnect material used in IC from introduction of ICs to till date. This paper studies and reviews new materials available for interconnect application which are optical interconnects, carbon nanotube (CNT), graphene nanoribbons (GNRs) and silicon nanowires which are alternatives to copper. While doing a survey of interconnect material, it is found that multiwalled CNTs, multilayer GNR and mixed CNT bundles are promising candidates and are ultimate choice that can strongly address the problems faced by copper but on integration basis copper would last for coming years.     

钠离子对poly(dT).poly(dA).poly(dT)三螺旋DNA分子呼吸模式的影响

利用分子结构的螺旋对称性,建立了一个包括钠离子的三链DNA分子poly(dT)*poly(dA)*poly(dT)的晶格动力学模型,计算了poly(dT)*poly(dA)*poly(dT)的氢键呼吸模式.结果发现钠离子的加入明显地淬灭了位于较低频率的几个最为强烈的Hoogensteen氢键呼吸模式,而对Watson-Crick氢键呼吸模式影响不明显,这说明钠离子能提高poly(dT)*poly(dA)*poly(dT)三螺旋结构的稳定性.该计算结果很好地解释了poly(dT)*poly(dA)*poly(dT)的热融化实验.     

聚对苯撑苯并双(口恶)唑发光及其器件制备

采用光谱技术,研究了聚对苯撑苯并双(口恶)唑(PBO)溶液的光敏发光特性,并用相对法估算出溶液发光效率在50%范围.结合光谱技术、半导体电学和电化学等研究手段,具体研究了以PBO为发光层的单层电致发光器件,研究结果显示,电致发光与薄膜的光致发光有具有相同的发光中心,峰值位于510 nm左右.同时发现,由于存制备过程中不同处理条件使得不同厚度薄膜残留的掺杂物质浓度不同,从而引起薄膜的导电性的不同.使得器件的阈值场强随PBO厚度的减小而逐渐增加.     

BNBST无铅压电陶瓷的制备工艺研究

设计了（Bi0.55Na0.5）1-X（BaaSrb）xTiO3（BNBST[100x-100a／100b]）无铅压电陶瓷新体系。该体系压电陶瓷具有工艺特性及压电响应好，压电常数高的特点，且有实际应用前景的新型压电陶瓷材料体系。采用传统的陶瓷工艺制备了（Bi0.55Na0.5）1-X（BaaSrb）xTiO3无铅压电陶瓷，研究了制备工艺参数对其物化结构性能的影响。生料的热重-差热（TGA-DTA）分析表明，粉料合成过程中，先是SrTiO3、BaTiO3的形成，然后是（Bi0．5Na0．5）Tio，的形成，同时三者形成固溶体；密度测试表明，陶瓷的体积密度随烧结温度的升高而增大，可较易获得理论密度94％的陶瓷；X-射线能谱分析（EDAX）研究表明，陶瓷的Bi、Na的挥发随着烧结温度的升高而加剧。研究结果表明，要制备性能优良的无铅压电陶瓷，需要精确控制制备工艺。     

人小肠粘膜免疫酶的定位研究—光镜和电镜免疫组织化学染色法

本文对免疫酶组织化学的样品制备程序和染色方法做了详细的阐述。用直接法、间接法和ABC法,对人小肠免疫酶的定位,进行了光镜和电镜的观察,染色阳性反应显著,获得了满意的效果。并对染色技巧做了分析和探讨。     

Arsenic deposition as a precursor layer on silicon (211) and (311) surfaces

We investigate the properties of arsenic (As) covered Si(211) and Si(311) surfaces by analyzing data from x-ray photoelectron spectroscopy (XPS) and low-energy electron diffraction (LEED) images. We then create a model using total surface energy calculations. It was found that both Si(211) and Si(311) had 0.68±0.08 surface As coverage. Si(211) had 0.28±0.04 Te coverage and Si(311) had 0.24±0.04 Te coverage. The Si(211) surface replaces the terrace and trench Si atoms with As for a lower surface energy, while the Si edge atoms form dimers. The Si(311) surface replaces all terrace atoms and adsorbs an As dimer every other edge site. These configurations imply an improvement in the mean migration path from the bare silicon surface by allowing the impinging atoms for the next epitaxial layer, tellurium (Te), to bind at every other pair of edge atoms, and not the step terrace sites. This would ensure a nonpolar, B-face growth.     

Joint estimation of TOA and DOA in IR-UWB system using a successive propagator method

Impulse radio ultra-wideband (IR-UWB) ranging and positioning require accurate estimation of time-of-arrival (TOA) and direction-of-arrival (DOA). With receiver of two antennas, both of the TOA and DOA parameters can be estimated via two-dimensional (2D) propagator method (PM), in which the 2D spectral peak searching, however, renders much higher computational complexity. This paper proposes a successive PM algorithm for joint TOA and DOA estimation in IR-UWB system to avoid 2D spectral peak searching. The proposed algorithm firstly gets the initial TOA estimates in the two antennas from the propagation matrix, then utilises successively one-dimensional (1D) local searches to achieve the estimation of TOAs in the two antennas, and finally obtains the DOA estimates via the difference in the TOAs between the two antennas. The proposed algorithm, which only requires 1D local searches, can avoid the high computational cost in 2D-PM algorithm. Furthermore, the proposed algorithm can obtain automatically paired parameters and has better joint TOA and DOA estimation performance than conventional PM algorithm, estimation of signal parameters via rotational invariance techniques algorithm and matrix pencil algorithm. Meanwhile, it has very close parameter estimation to that of 2D-PM algorithm. We have also derived the mean square error of TOA and DOA estimation of the proposed algorithm and the Cramer-Rao bound of TOA and DOA estimation in this paper. The simulation results verify the usefulness of the proposed algorithm.     

系统级封装新型埋入式电源滤波结构的研究

在高密度小尺寸的系统级封装(SiP)中,对供电系统的完整性要求越来越高,多芯片共用一个电源网路所产生的电压抖动除了会影响到芯片的正常工作,还会通过供电网路干扰到临近电路和其他敏感电路,导致芯片误动作,以及信号完整性和其他电磁干扰问题.这种电压抖动所占频带相当宽,几百MHz到几个GHz的中频电源噪声普通方法很难去除.结合埋入式电容和电源分割方法的特点,提出一种新型高性能埋入式电源低通滤波结构直接替代电源/地平面.研究表明,在0.65～4GHz的频带内隔离深度可达-40～75 dB,电源阻抗均在0.25ohm以下,实现了宽频高隔离度的高性能滤波作用.分别用电磁场和广义传输线两种仿真器模拟,高频等效电路模型分析这种低通滤波器的工作原理以及结构对隔离性能的影响,并进行了实验验证.