SiC thin-film Fabry-Perot interferometer for fiber-optic temperature sensor

Polycrystalline SiC grown on single-crystal sapphire substrates have been investigated as thin-film Fabry-Perot interferometers for fiber-optic temperature measurements in harsh temperatures. SiC-based temperature sensors are compact in size, robust, and stable at high temperatures, making them one of the best choices for high temperature applications. SiC films with thickness of about 0.5-2.0 /spl mu/m were grown at 1100/spl deg/C by chemical vapor deposition (CVD) with trimethylsilane. The effect of operating temperature on the shifts in resonance minima, /spl Delta//spl lambda//sub m/, of the SiC/sapphire substrate has been measured in the visible-infrared wavelength range. A temperature sensitivity of 1.9/spl times/10/sup -5///spl deg/C is calculated using the minimum at /spl sim/700 nm. Using a white, broadband light source, a temperature accuracy of /spl plusmn/3.5/spl deg/C is obtained over the temperature range of 22/spl deg/C to 540/spl deg/C.     

Electron beam direct-write tunable polymeric waveguide grating filter

We report a tunable electron beam direct-write polymeric waveguide Bragg grating filter based on a negative tone epoxy, The waveguide filter, with a 5-mm-long first-order grating, exhibits a transmission peak of -27 dB and a 3-dB bandwidth of /spl sim/0.8 nm, and there is an excellent agreement between experimental data and simulation results. The temperature response of the filter is also characterized. The rate of change of refractive index dn/dT is /spl sim/ -1.8 /spl times/ 10/sup -4///spl deg/1C at 1550-nm wavelength for both transverse electric and transverse magnetic polarizations, and the rate of change of peak wavelength d/spl lambda//dT is /spl sim/ -0.14 nm//spl deg/C. The tuning performance is comparable to other grating devices fabricated using multiple processing steps.     

Wavelength and power stabilisation of uncooled 975 nm thick quantum well lasers over 110/spl deg/C temperature range

The use of a thick quantum well enables coherence-collapse operation of a Bragg grating stabilised laser diode over 110/spl deg/C temperature range, yielding 975 nm wavelength emission with >40 dB sidemode suppression ratio, <1% power variation, and fibre-output power as high as 293 mW at 15/spl deg/C and 168 mW at 125/spl deg/C.     

400 mW uncooled MiniDIL pump modules

A new generation of wavelength stabilised, uncooled 980 nm pump modules in MiniDIL housings is presented, enabling 400 mW ex-fibre power over a temperature range of 10/spl deg/C to 70/spl deg/C. At 100/spl deg/C 200 mW power is still obtained with a robust fibre coupling scheme.     

High-power singlemode AlGaInAs/InP 14xx-nm laser for uncooled application

360 mW fibre output power and excellent wavelength stability within 0.6 nm over a temperature range from 10 to 70/spl deg/C in a grating-stabilised AlGalaAs/InP 14xx-nm pump laser is reported. A fibre output power of 300 mW was maintained from 10 to 70/spl deg/C as the driving current was increased by 36% or 1.34 dB.     

Uncooled DBR laser directly Modulated at 3.125 gb/s as athermal transmitter for low-cost WDM systems

An uncooled three-section tunable distributed Bragg reflector laser is demonstrated as an athermal transmitter for low-cost uncooled wavelength-division-multiplexing (WDM) systems with tight channel spacing. A /spl plusmn/0.02-nm thermal wavelength drift is achieved under continuous-wave operation up to 70/spl deg/C. Dynamic sidemode suppression ratio of greater than 35 dB is consistently obtained under 3.125-Gb/s direct modulation over a 20/spl deg/C-70/spl deg/C temperature range, with wavelength variation of as low as /spl plusmn/0.2 nm. This indicates that more than an order of magnitude reduction in coarse WDM channel spacing is possible using this source.     

Polymer micro-ring filters and modulators

Micro-ring wavelength filters and resonant modulators using polymer materials at 1300 nm and 1550 nm are analyzed, designed, and demonstrated. The rings are integrated with vertically coupled input and output waveguides. The devices are fabricated using optical lithography. Filters with a finesse of 141 and free spectral range of 5 nm at 1300 nm and finesse of 117 with a free spectral range (FSR) of 8 nm at 1550 nm are demonstrated. Ring resonators with a Q as high as 1.3 /spl times/ 10/sup 5/ at 1300 nm are demonstrated. The filters can be temperature tuned at the rate of 14 GHz//spl deg/C. Resonant ring modulators, which use an electrooptic polymer, are demonstrated. The resonance wavelength voltage tunes at the rate of 0.82 GHz/V. The modulators have a bandwidth larger than 2 GHz. Using the resonant modulator, and open eye diagram at 1 Gb/s is demonstrated.     

Low-threshold narrow-linewidth InGaAs-GaAs ridge-waveguide DBR lasers with first-order surface gratings

The design and operation of InGaAs-GaAs ridge-waveguide distributed Bragg reflector (DBR) single quantum-well lasers with first-order surface gratings fabricated using only a single growth step are presented. Uncoated devices exhibit CW threshold currents as low as 6 mA with slope efficiencies of 0.46 W/A. By varying the period of the first-order DBR grating, a wavelength range of 540 /spl Aring/ (/spl sim/15.2 THz) is obtained with the threshold currents and slope efficiencies remaining below 10 mA and above 0.40 W/A, respectively, over the entire wavelength range. High characteristic temperature, T/sub 0/, values of 450 K, as measured between T=10/spl deg/C and 40/spl deg/C, are obtained for devices with Bragg wavelengths positively detuned from the peak gain wavelength. The spectral linewidth minimum of these devices is below 25 kHz, which is the resolution limit of the self-heterodyning system used to measure the spectral linewidth.     

Design and fabrication of zinc oxide thin-film ridge waveguides on silicon substrate with ultraviolet amplified spontaneous emission

Zinc oxide (ZnO) thin-film ridge waveguides have been designed and fabricated on n-type (100) silicon substrate. A filtered cathodic vacuum arc technique is used to deposit high-crystal-quality ZnO thin films on lattice-mismatched silicon substrates at 230/spl deg/C. A ridge waveguide of width /spl sim/2 /spl mu/m and height /spl sim/0.1 /spl mu/m is defined on the ZnO thin film by plasma etching. Room-temperature amplified spontaneous emission is observed with peak wavelength at /spl sim/385 nm under 355-nm optical excitation. It is found that the net optical gain of the ZnO thin-film ridge waveguides can be as large as 120 cm/sup -1/ at a pump intensity of /spl sim/1.9 MW/cm/sup 2/.     

Wideband quantum-dash-in-well superluminescent diode at 1.6 /spl mu/m

We demonstrate broadband superluminescent diode at /spl sim/1.6-/spl mu/m peak emission wavelength using InAs-InAlGaAs quantum-dash-in-well structure on InP substrate. The fabricated device exhibits the close-to-Gaussian emission with a bandwidth of up to 140 nm. The device produces a low spectrum ripple of 0.3dB and an integrated power of 1.7 mW with the corresponding bandwith of 110 nm measured at 20 /spl deg/C under 8 kA/cm/sup 2/.     

Fabrication of niobium titanium nitride thin films with high superconducting transition temperatures and short penetration lengths

We report a systematic study of the superconducting and normal state properties of reactively sputtered Nb/sub 0.62/Ti/sub 0.38/N thin films deposited on thermally oxidized Si wafers. The superconducting transition temperature (T/sub c/) was found to increase from 12 K for films prepared on unheated substrates to over 16 K for films prepared on substrates maintained at 450/spl deg/C. A Nb buffer layer was found to improve T/sub c/ by /spl sim/0.5 K for growths at lower substrate temperatures. The films fabricated at 450/spl deg/C have an amply smooth surface (1.5/spl plusmn/0.25 nm root mean square roughness), a sufficiently high T/sub c/, and sufficiently small penetration depth (200/spl plusmn/20 nm at 10 K) to be useful as ground planes and electrodes for current-generation 10 K rapid single-flux quantum circuit technology.     

A method to tune the cavity-mode wavelength of resonant cavity-enhanced photodetectors for bidirectional optical interconnects

A method to tune the cavity-mode wavelength of resonant cavity-enhanced photodetectors (RCE-PDs) is proposed. The proposed method can enable monolithic integration of vertical-cavity surface-emitting lasers and RCE-PDs to be a cost-competitive choice for bidirectional optical interconnection by reducing the amount of component and packaging costs presently involved. The properly tuned cavity-mode wavelengths remain effectively aligned within a temperature range of -10/spl deg/C/spl sim/50/spl deg/C.     

Thermally controlled wavelength locker integrated in widely tunable SGDBR-LD module

A sampled-grating distributed Bragg reflector laser module having an integrated multiwavelength locker has been developed and evaluated. The uniquely designed wavelength locker made of thermally controlled etalon has provided uniform wavelength monitoring and very stable wavelength locking in the 188-ITU grid channels (37 nm) with 25-GHz spacing. Over the case temperature from -5/spl deg/C to 65/spl deg/C, the laser wavelength was locked within /spl plusmn/0.5 GHz, and the total power consumption of the module was less than 4 W.     

A temperature-insensitive erbium-doped fiber amplifier for terrestrial wavelength-division-multiplexing systems

We have evaluated a variation in the temperature dependence of an erbium-doped fiber gain spectrum by a pump wavelength in the 980-nm band for the first time. By optimizing both the pump wavelength in the 980-nm band and a temperature-sensitive gain flattening filter, the gain change of an erbium-doped fiber amplifier was successfully suppressed to 0.18 dB/sub pp/ in the temperature range between 0/spl deg/C and 65/spl deg/C and the wavelength range of 37.0 nm.     

High performance quantum dot lasers on GaAs substrates operating in 1.5 /spl mu/m range

Stacked InAs/InGaAs quantum dots are used as an active media of metamorphic InGaAs-InGaAlAs lasers grown on GaAs substrates by molecular beam epitaxy. High quantum efficiency (/spl eta//sub i/>60%) and low internal losses (/spl alpha/<3-4 cm/sup -1/) are realised. The transparency current density per single QD layer is estimated as /spl sim/70 A/cm/sup 2/ and the characteristic temperature is 60 K (20-85/spl deg/C). The emission wavelength exceeds 1.51 /spl mu/m at temperatures above 60/spl deg/C.     

Optical fibre for fabricating long-period gratings with low temperature sensitivity within selected temperature range

Reported is a photosensitive fibre for making long-period gratings with temperature sensitivity of the resonance wavelength as low as 0.25 nm over 0-70/spl deg/C. Furthermore, a convenient method for selecting the temperature of minimum sensitivity, by controlling the boron concentration in the core and monitoring it with attenuation at 1550 nm, is presented.     

Improved spectral properties of an optically pumped semiconductor disk laser using a thin diamond heat spreader as an intracavity filter

This letter describes an optically pumped high-power InP-based semiconductor disk laser with a thin (50 /spl mu/m) diamond heat spreader bonded to the surface of the gain chip. The diamond heat spreader performs the multiple functions of heat removal, spectral filtering, and wavelength stabilization by utilizing the high thermal conductivity and the low thermooptic coefficient of diamond, along with the large free-spectral range of a thin intracavity etalon. A pump-power-limited output power of 680 mW at 1.55 /spl mu/m is demonstrated at a heat sink temperature of -30/spl deg/C, and 140 mW at room temperature. The spectral width was measured to be less than 0.08 nm and the spectral drift with temperature and pump power as low as 0.03 nm//spl deg/C and 0.14 nm/W, respectively.     

Compact polarization-insensitive InGaAsP-InP 2 /spl times/ 2 optical switch

We demonstrate a simple, compact, high-contrast ratio, and low-loss polarization-insensitive InGaAsP-InP 2 /spl times/ 2 optical switch with an operational wavelength range from 1520 to 1580 nm. The switch is 1.3 mm long by 160 /spl mu/m wide. The on-off contrast ratio is within (21/spl plusmn/2) dB over the temperature range from 16/spl deg/C to 64/spl deg/C, the polarization sensitivity is <2 dB, and the propagation loss is (3/spl plusmn/2) dB in both the ON and OFF states, making it potentially useful for optical cross-connects, delay lines, and add-drop multiplexers.     

Polarization independent bulk active region semiconductor optical amplifiers for 1.3 /spl mu/m wavelengths

Semiconductor optical amplifiers for 1.3 /spl mu/m are realized combining single-step grown bulk InGaAsP active region with ridge-waveguides. Achieved fiber-to-fiber gains are in excess of 27 dB with spectral ripples below 0.2 dB. Gain is polarization insensitive to within 1 dB over the entire range of driving current, 1.28 /spl mu/m to 1.34 /spl mu/m wavelength and 10/spl deg/C to 50/spl deg/C heat sink temperature. Intrinsic noise figure is 6.3 dB. Gain saturates at +10 dBm.     

Sharp-cutoff low-pass filters using floating gyrators

The practical realization in gyrator-C form of a seventh-order Cauer-parameter low-pass filter with 40-dB stopband attenuation is described. The three floating coils of the equivalent LC filter were replaced by capacitor-loaded semi-floating gyrators. The gyrators were realized in hybrid form using thick-film resistors. The performance of the filter over a temperature range from -40/spl deg/ to +61/spl deg/C was very satisfactory, without any attempt at temperature compensation being made. This, together with the wider allowable element tolerances (compared with other active RC filter methods) shows the inherent suitability of gyrator-C filters for integration. Also in this paper some of the special problems and characteristics of gyrator-C filters are theoretically discussed, in particular the realization of gyrators with floating ports, gyrator Q-enhancement, and component tolerances in gyrator-C filters.