Intermodulation distortion in a multiple-quantum-well semiconductor optical amplifier

The measurement of intermodulation distortion (IMD) induced by carrier-density modulation in a multiple-quantum-well (MQW) semiconductor amplifier is reported. The results show that MQW amplifiers have 15 dB less IMD than conventional buried-heterostructure semiconductor amplifiers. The IMD is dependent on the output power of the amplifiers, which confirms that the carrier-density modulation is the dominant nonlinear mechanism in MQW amplifiers. In addition, the results show that, unlike conventional buried-heterostructure amplifiers, MQW amplifiers have at least two time constants (200-250 ps and <10 ps) for the gain recovery process.<>     

High-speed InGaAsP/InP multiple-quantum-well laser

The authors describe practical high-speed InGaAsP/InP lasers based on compressively strained quantum wells. Buried heterostructure lasers with threshold currents of 10 mA and slope efficiencies of 0.23 mW/mA are used. A modulation bandwidth of 20 GHz is obtained at a low drive current of 90 mA. A K factor of 0.25 ns is obtained and the intrinsic bandwidth of these lasers is estimated at 35 GHz     

High-speed modulation of strain-compensated InGaAs-GaAsP-InGaP multiple-quantum-well lasers

Small signal direct modulation characteristics of InGaAs-GaAsP-InGaP multiple quantum well ridge waveguide lasers (4.5/spl times/220 /spl mu/m/sup 2/) are described. The compressive strain of four InGaAs quantum wells is compensated by the tensile strain of GaAsP barriers. The lasers have a threshold current of 8 mA and an internal differential quantum efficiency of 80%. A 3-dB bandwidth of 25 GHz is obtained at 54 mA. It is found that the strain-compensated lasers have a K factor as low as 0.15 ns, implying a maximum 3-dB bandwidth of 59 GHz.     

Very low power consumption semiconductor optical amplifier array

Very low power consuming and polarization insensitive semiconductor optical amplifier arrays with submicron-wide InGaAsP active layers are realized by selective MOVPE technique. 20-dB signal gain at a low injection current of 25 mA was achieved in four-channel arrays     

All optical multiple-quantum-well waveguide switch

By increasing the input light intensity to a GaAs/GaAlAs multiple-quantum-well waveguide, an induced phase shift of up to ? radians has been detected. Partial switching of light between two such coupled waveguides by variation of the input light intensity has been observed for the first time.     

+20 dBm output power balanced optical amplifier module

A novel and efficient balanced optical amplifier (BOA) configuration is proposed. In this technique the four ports of an erbium fibre multiplexer are used to combine signal and pump in a symmetric fashion, providing dual pumping while preventing pump crosstalk. The use of the BOA design in a 980 nm pumped erbium doped fibre power booster packaged module is demonstrated. Furthermore, tests of a +20 dBm output BOA as a power amplifier in a 5 Gbit/s transmission experiment result in successful bit error rate measurements through 86 km of nondispersion shifted fibre.<>     

High-speed GaAs operational amplifier

An operational amplifier has been designed and fabricated using GaAs MESFETs. This amplifier is a general-purpose monolithic GaAs op amp designed as as a stand-alone component. The amplifier has a differential input, an open-loop gain in excess of 60 dB, and is internally compensated. The high open-loop gain (60 dB at 100 kHz) was achieved by using gain stages with positive feedback. The op amp incorporates a current-mirror level-shifting stage which allows the op amp to operate over a wide power-supply range (/spl plusmn/5-9 V). Previous designs have diodes to achieve level shifting, a practice that precludes operation over a wide supply range. This op amp is a true analog to its silicon counterparts, but it has a higher gain-bandwidth product.     

对数比放大电路在精密光功率计中的应用

光功率测量是光纤通信系统最基本的测量参数之一.在实际测量中,光功率计要求有很大的动态测量范围.采用传统线性放大电路设计的光功率计,存在着换档误差,动态测量范围也受到限制.由于结果显示要进行对数运算,软件处理也相对比较复杂.为改善上述不足,使用对数比放大电路代替传统的线性放大电路.这样可以避免换档误差和繁琐的对数运算,提高精度.经过实际设计验证,改进设计可获得80 dB动态范围,0.1 dLBm的测量精度,而且电路简洁、易于校准.此设计方法已在实际产品得以应用.     

An optical power equalizer based on one Er-doped fiber amplifier

A device which exhibits zero or slightly negative differential optical gain over a broad input power range is demonstrated. The scheme is based upon saturation enhancement by bidirectional signal input in an Er-doped fiber amplifier. Power equalization of better than 1.2 dB over a 14-dB dynamic input power range is achieved at the 1530-nm signal wavelength. The noise figure penalty due to the equalization is below 3 dB as evaluated by a device simulation     

High-speed CMOS unity-gain current amplifier

A high-performance CMOS unity-gain current amplifier is proposed. The solution adopts two feedback loops to reduce the input resistance and a nested-Miller technique to provide frequency compensation. A design example using a 0.8 μm process and a 2 V supply is given and SPICE simulations show a bandwidth of 75 MHz, no slew-rate limitations and a settling time better than 50 ns, irrespective of the current amplitude. Input and output resistances are better than 0.1 Ω and 15 MΩ, respectively. The input-referred white noise spectral density is .     

高速高增益运算放大器的设计及应用

本文设计了一种高速高增益放大器,该放大器通过增加全差分的共源共栅电路作为辅助放大器来提高运放增益,并采用频率补偿和钳位管相结合的技术改善运放的频响特性,使得运放在通频带范围内类似于单极点运放,大大减少了运放的转换时间.采用SMIC的0.35μm工艺模型进行仿真,结果表明,运放的直流增益达到110dB,带宽266MHz(负载电容 Cload=1pF),相位裕度55°,只需10ns即可达到0.1%的稳定精度,因而是一种有效的高速高精度运放的实现途径.     

Self-phase modulation coefficient of multiple-quantum-well optical amplifiers

The self-phase modulation coefficient /spl gamma/ of 1310 nm multiple-quantum-well (MQW) semiconductor optical amplifiers has been investigated. It is found to vary from 16/spl times/10/sup 4/ W/sup -1/ m/sup -1/ for low driving conditions to 3/spl times/10/sup 4/ W/sup -1/ m/sup -1/ for high-driving conditions. This implies that the amount of self-phase modulation occurring in the amplifier is between 1.5-10/spl times/ more than that occurring in the optical fiber following the amplifier. The additional self-phase modulation caused by the semiconductor optical amplifier may be used to achieve compensation for fiber dispersion in optical communication systems at significantly lower average power levels. The linewidth enhancement factor /spl alpha//sub H/ was found to increase from a value of 2 at low driving conditions, in agreement with results reported for MQW lasers, to a value of 3 at high-driving conditions.     

A novel optical bistable multiple-quantum-well phase modulator

The authors present a new type of optically bistable phase modulator utilizing a self electrooptic effect device (SEED) integrated with an electrooptic wavelength modulator. An electrically bistable SEED, operating on the principle of the quantum-confined Stark effect, controls the bias voltage across an electrooptic waveguide phase modulator to produce optical bistability. A control signal at 0.848 μm, corresponding to the first electron to heavy hole exciton transition in GaAs/AlGaAs multiple-quantum-well is used to switch 1.152 μm light propagating through a waveguide in a direction normal to the control beam     

High-speed characteristics at high input optical power of GaInAsPelectroabsorption modulators

High-speed characteristics at high input optical power levels of GaInAsP double heterostructure electroabsorption modulators are investigated. It is shown that the bandwidth degradation due to high input optical power is strongly dependent on the absorption coefficient. A design to maintain high-speed characteristics under milliwatt range output power operation, and experimental results including a 100 km single-mode fibre pulse transmission experiment are demonstrated     

Multichannel AM-VSB television signal transmission using anerbium-doped optical fiber power amplifier

The use of an erbium-doped optical fiber power amplifier in a multichannel amplitude-modulated vestigial-sideband CATV transmission system for potential subscriber loop applications is discussed. Using a color-center laser pump at 1.48 μm, a fiber-to-fiber gain of 11.5 dB (at 1.539 μm), which is 10 dB compressed from the small-signal gain, and a total system power margin of 15 dB were achieved. No intermodulation distortion was introduced by the fiber amplifier. The received video SNR of 40-46 dB was limited by the linearity of the distributed-feedback laser diode used     

Analysis of power budget performances of digital transmissionsystems with an optical amplifier

Explicit expressions for the power budget of a direct detection transmission system when an optical amplifier changes its location along the span are presented. The analysis is in good agreement with experimental data obtained at 565 Mbit/s and 2.5 Gbit/s     

High-speed optical preamplifiers

We describe those factors which influence the design of highspeed optical preamplifiers, and examine the exchange between bandwidth and noise in a shunt-feedback first stage. For a given preamplifier bandwidth, it is shown that an operating point exists which minimises the amplifier noise level.     

High-gain polarization-insensitive optical amplifier

A polarization-insensitive optical amplifier (PIOA) consisting of two serial semiconductor laser amplifiers (SLAs) is studied theoretically and experimentally. A polarization-insensitive isolator (PII) inserted between the two SLAs serves not only to eliminate the coupling cavity, but also to rotate any polarized forward light by 90°. Experimental results show a maximum fiber-to-fiber gain of 29 dB. PIOA gain deviation for the input polarization launch angle is just 0.6 dB compared to an original value of 5-6 dB in a single SLA. A theoretical analysis shows that it is necessary to achieve a PII rotation design error of less than 0.5° in order to suppress deviation below 0.1 dB. PIOA noise figure deviation, for the input signal polarization launch angle, was only 0.1 dB from both the experimental and theoretical results even though there was a rotation error of 2°     

Polarisation-independent configuration optical amplifier

A new polarisation independent semiconductor laser amplifier is presented. By using a regular semiconductor amplifier in a double pass configuration, polarisation independent gain is achieved. Experiments demonstrate a reduction in the gain difference between TE and TM waves from 4 dB to 0.2 dB     

High-frequency InGaAs/InP multiple-quantum-well buried-mesa electroabsorption optical modulator

We describe the structure and performance characteristics of an InGaAs/InP multiple-quantum-well (MQW) electro-absorption buried-mesa optical modulator. The device is fabricated with two metal-organic chemical-vapour-deposition (MOCVD) growth steps, wherein small-area circular (40?m diameter) PIN diodes are buried with Fe-doped semiinsulating (SI) InP regrowth. The modulator has a relatively low insertion loss (4.5 dB) with 25% modulation depth and very high modulation bandwith (5.3 GHz) operating at 1.62?m wavelength.