一种基于广义旁瓣相消的改进降秩算法

在处理大型阵列时,阵元数较多,通常对阵列采用降秩处理可以较好地解决运算量过大的问题。基于广义旁瓣相消器(GSC)框架的降秩变换自适应滤波是各种降秩自适应滤波算法的统一模型。分析了基于GSC框架的几种降秩自适应滤波算法,针对当降秩阶数大于干扰数时方向图旁瓣过高、波形混乱和系统性能下降问题,提出了一种基于GSC框架的改进降秩算法,该算法利用特征子空间对GSC阻塞矩阵加以改进,使用改进后的阻塞矩阵进行降秩自适应处理,仿真结果证明了改进算法可以降低旁瓣电平,并形成较好的波束形状,提高了GSC性能的稳健性。     

DS-CDMA系统中基于最大特征值的ESB算法

针对DS-CDMA系统,在基于特征空间(ESB)自适应波束形成算法的基础上提出了一种基于最大特征值的改进算法,该算法利用阵列接收信号协方差矩阵最大特征值所对应的特征向量构成子空间,摈弃了权向量在干扰信号子空间及噪声子空间中的分量.改进算法结构简单、运算量低.计算机仿真和分析证明该算法性能要优于常规ESB算法的性能.     

一种改进的基于特征空间自适应波束形成算法

在基于特征空间(ESB)自适应波束形成算法的基础上,本文提出一种更稳健的波束形成算法,该算法利用对阵列接收信号相关矩阵特征分解获得的信号子空间,对基于特征空间算法中的约束导向矢量进行校正,并完成波束形成.计算机仿真和分析证实了该算法性能要优于常规ESB算法的性能.     

一种基于ESPRIT的盲波束形成方法

基于特征空间波束形成算法(ESB)是常用的一种自适应波束形成算法,已提出的ESB算法大多假设期望信号方向精确已知。本文在期望信号方向未知情况下,提出了一种基于子空间的波束形成方法。计算机仿真结果验证了该算法的有效性。     

模式空间矩阵重构波束形成算法研究

该文提出了一种均匀圆阵相干波束形成方法,这里称为模式空间矩阵重构(MODE-TOEP)波束形成算法。该算法在对均匀圆形阵列(UCA)的输出信号进行模式空间转换的此基础上,重新构一个特殊的Toeplitz矩阵,然后进行基于特征空间的波束形成,可以有效地抑制相干干扰。与模式空间平滑ESB算法相比,MODE-TOEP波束形成算法运算量小而且干扰抑制性能更好。计算机仿真表明MODE-TOEP波束形成算法的有效性和优越性。     

基于多级阻塞的稳健相干自适应波束形成

针对期望信号波达角(DOA)估计误差较大时相干波束形成性能下降的问题,该文提出一种基于多级阻塞的稳健相干自适应波束形成算法。该算法首先定义阻塞矩阵,推导多级阻塞原理,并利用其滤除阵列接收信号中的期望信号;然后给出空间中只存在期望信号时,子阵与全阵间阵列流型的映射关系,据此推导全阵扩展变换,并证明其在干扰信号存在条件下的有效性;最终利用扩展变换获取全阵最优权矢量,实现相干波束形成。该算法对期望信号波达角估计误差稳健,且无需干扰信号来向的先验信息,同时可以有效避免阵列孔径的损失。仿真分析验证了算法的优越性和理论分析的有效性。     

基于神经网络的特征空间波束形成

基于特征空间的波束形成（ESB）算法具有较强的稳健性,但矩阵特征分解产生的运算量较大,所以本文提出将神经网络应用于ESB算法。由于传统的求解特征矢量的神经网络只针对实矩阵,新算法将复信号协方差矩阵进行酉变换转换为实对称矩阵,然后利用神经网络求解信号子空间,进行特征空间波束形成。仿真结果表明本文算法可以提高小快拍数时的波束形成性能,增大输出信干噪比。     

宽带波束域频率聚焦自适应波束形成算法

针对传统时延控制波束形成器无法适应宽带信号接收的问题,提出一种宽带波束域频率聚焦自适应波束形成算法。首先,通过时延控制方法在空间预设方位形成多个独立波束,利用傅里叶变换将多波束数据变换到频域,针对每个频点构造聚焦矩阵,通过聚焦变换将宽带信号对齐到同一参考频率;然后,估计子带聚焦后的协方差矩阵,并进行特征分解得到信号子空间;最后,利用基于特征子空间(ESB)的波束形成方法得到权矢量,实现自适应波束形成。仿真结果表明,该算法能够实现对宽带信号的自适应接收,具有良好的抗干扰能力和稳健性。     

基于权值约束变换误差的虚拟阵列波束形成

针对内插变换应用于波束形成时,适用角度范围受限的问题,提出了一种利用权值约束变换误差的改进算法.该方法将权值和变换误差约束为近似正交的关系,在虚拟阵列接收信号的协方差矩阵上加载变换误差协方差矩阵,改善了变换误差过大时波束形成性能下降的问题.仿真结果表明,改进后的算法应用于大角度内插变换波束形成时,在干扰处仍能形成稳定的较深的零点,增加了虚拟阵列波束形成的输出信干噪比（Signal to Interference and Noise Ratio,SINR）.与现有方法相比,该方法增加了内插变换应用于虚拟阵列波束形成时的适用角度范围,且能够补偿阵列本身带来的误差,计算复杂度较低.     

基于空时二维协方差矩阵修正的波束形成算法

在实际应用环境中,信源和阵列传感器等存在误差,假设期望信号的导向矢量与真实信源导向矢量的失配会导致阵列波束形成器把期望信号当作干扰来加以抑制。针对信号匹配误差导致自适应波束形成性能下降的问题,提出了一种基于空时二维协方差矩阵修正的波束形成算法,利用空时结构对宽带幅相误差校正的特性,对空时二维协方差矩阵进行重构,并对修正协方差矩阵进行特征值分解,分离出信号加干扰子空间,将失配导向矢量投影可使期望信号与噪声子空间严格正交,最后求解算法最优权值。算法有效改善了波束形成的输出信噪比,计算机仿真验证了理论分析的正确性和算法的稳健性。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.