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简要介绍了RTD(共振隧穿二极管)的微分负阻特性及其等效电路,通过对实际AlAs/InxGa1-xAs/GaAs双势垒共振隧穿结构I-V曲线拟合,得出RTD的Pspice等效电路模型参数。采用Pspice软件建立了RTD的等效电路模型,并对其微分负阻特性进行了仿真,仿真结果与测试结果基本吻合。利用所建立的模型,对RTD的基本应用电路:反相器、非门、与非门和或非门进行了仿真模拟。结果表明,该类电路能够正确实现其逻辑功能。最后,对基于RTD的振荡电路进行了仿真,仿真频率与实际测试频率处于同一数量级。由于实测电路寄生参数如串联电阻、电容等的影响,仿真结果与测试结果稍有出入。 相似文献
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报道了共振隧穿二极管(RTD)在压力下的弛豫振荡特性.采用Pspice 8.0软件仿真并设计了振荡电路,测得其振荡频率达200kHz.在(100)半绝缘(SI)GaAs衬底上利用分子束外延(MBE)技术生长了AlAs/InxGa1-xAs/GaAs双势垒共振隧穿结构(DBRTS),并采用Au/Ge/Ni/Au金属化和空气桥结构成功加工出了RTD.由于RTD的压阻效应,采用显微喇曼光谱仪标定所加应力大小,对RTD在加压条件下的振荡特性进行了研究,结果表明其弛豫振荡频率大致有-17.9kHz/MPa的改变量. 相似文献
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报道了共振隧穿二极管(RTD)在压力下的弛豫振荡特性.采用Pspice 8.0软件仿真并设计了振荡电路,测得其振荡频率达200kHz.在(100)半绝缘(SI)GaAs衬底上利用分子束外延(MBE)技术生长了AlAs/InxGa1-xAs/GaAs双势垒共振隧穿结构(DBRTS),并采用Au/Ge/Ni/Au金属化和空气桥结构成功加工出了RTD.由于RTD的压阻效应,采用显微喇曼光谱仪标定所加应力大小,对RTD在加压条件下的振荡特性进行了研究,结果表明其弛豫振荡频率大致有-17.9kHz/MPa的改变量. 相似文献
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Peiji Zhao Hong Liang Cui Woolard D.L. Jensen K.L. Buot F.A. 《Electron Devices, IEEE Transactions on》2001,48(4):614-627
The equivalent circuit parameters of resonant tunneling diodes (RTD) are extracted from numerical simulation results for RTDs. The RTD models used in this paper are double barrier structures. The influence of the resonant tunneling structure (RTS) parameters, such as the height of barriers, the width of the quantum well, the width of the spacers, and the width of the barriers, on the device parameters are systematically discussed. The effects of device temperature on device parameters are also discussed. Scattering between electrons and phonons greatly affects device parameters and thereby the function of the RTDs. Physical explanations about how the structure parameters and device temperature influence the device parameters are provided. Based on the analysis results, a general way to get an RTD oscillator with a higher maximum frequency is suggested 相似文献
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A low-noise amplifier utilizing the negative input resistance of resonant tunneling transistors (RTT's) is proposed. Expected features of the RTT amplifiers are: 1) negligible effect of noise sources at the output, owing to their large power gain; 2) flat variation of noise figure (NF) versus frequency, due to white spectra of noise sources at the input; and 3) a high maximum oscillation frequency (fmax) (over several 100 GHz), Based on simulated DC characteristics, over 500 GHz fmax and 0.3 dB NF at 100 GHz are predicted for optimized AlGaAs/GaAs/AlGaAs resonant tunneling diodes (RTD's). In an RTT formed by coupling an FET to an optimized RTD, 0.55 dB minimum noise figure and 26 dB associated gain are predicted at 100 GHz. Also, a 1/w2 spectrum of the input noise resistance is predicted at low frequencies 相似文献
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The design and fabrication of a novel resonant tunneling diode (RTD) structure to be used in a monolithically integrated trigger circuit are reported. The structure has been designed to have high peak current densities with relatively low resonant voltages. These devices have been monolithically integrated with resistors to build a high-frequency trigger circuit. Experiments demonstrated triggering performance up to 110 GHz with subpicosecond timing jitter 相似文献
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A simple derivation of the form for the compact model of the quantum capacitance in a resonant tunneling diode (RTD) is presented. The quantum capacitance is shown to reduce the resistive cutoff frequency. The implementation of the model into SPICE is described. The distorting effect of the strongly nonlinear quantum capacitance on an oscillator circuit is demonstrated in a SPICE simulation. The nonlinearity becomes important for the highest frequency applications when the RTD capacitance is comparable to the capacitance in the rest of the circuit. 相似文献
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Unified AC model for the resonant tunneling diode 总被引:1,自引:0,他引:1
Qingmin Liu Seabaugh A. Chahal P. Morris F.J. 《Electron Devices, IEEE Transactions on》2004,51(5):653-657
A physics-based model is shown to yield the small-signal equivalent circuit of the resonant tunneling diode (RTD) including an analytic expression for both the quantum inductance and capacitance. This model unifies previous models by Brown et al. for quantum inductance and by Lake and Yang for quantum capacitance, and extends the RTD SPICE model of Broekaert. The equivalent circuit has been fit to both current-voltage and microwave S-parameter measurements of AlAs-InGaAs-InAs-InGaAs-AlAs RTDs from 45 MHz to 30 GHz and over biases from 0 to 0.81 V. Good agreement between the model and measurement is shown. 相似文献
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A two-port technique is presented for determining the circuit elements and noise sources of the equivalent circuit of a two-terminal device at microwave frequencies. The two-terminal device is connected as a two-port so that intrinsic and parasitic circuit elements can be obtained from full two-port S-parameter measurements. This measurement does not require one of the two contacts to be grounded, which makes it particularly well suited for the characterization of integrated devices where parasitic elements become important and cannot be easily calculated. The noise of the device is measured by employing a noise-figure meter and the intrinsic noise is computed from the measured terminal noise. As an example, the impedance and noise elements of a resonant tunneling diode (RTD) are measured over frequency ranges of 2-8 and 2-4 GHz, respectively 相似文献
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Seiichirou Kitagawa Safumi Suzuki Masahiro Asada 《Journal of Infrared, Millimeter and Terahertz Waves》2014,35(5):445-450
We propose a wide-range varactor-tuned terahertz oscillator using a resonant tunneling diode (RTD) and estimate the tuning range. In a slot antenna, a varactor diode is placed in parallel with an RTD and can be operated with different bias voltages. Frequency tuning is possible by changing the varactor-diode capacitance with the bias voltage. A wide frequency tuning range >200 GHz (500 to 740 GHz) is obtained with an oscillator with a 20-μm-long antenna, 1.3-μm2 RTD mesa, and 16-μm2 varactor-diode mesa by electromagnetic-field analysis including a varactor-diode model. 相似文献