新铌酸盐A5NdSn3Nb7O30的合成与介电特性

通过固相反应法在AO-Nd2O3-SnO2-Nb2O5(A=Ba,Sr)体系中合成了填满型钨青铜结构新铌酸盐A5NdSn3Nb7O30。分别采用X射线衍射分析和扫描电镜进行了结构分析,并进行了介电性能测试。结果表明,它们室温时都为四方钨青铜结构顺电相。A5NdSn3Nb7O30(A=Ba,Sr)陶瓷体具有高的室温相对介电常数,1 MHz时分别为182与144;低的介电损耗,分别为1.8×10-3和6.2×10-4;其介电常数温度系数(τε)分别为-1 071×10-6K-1和-507×10-6K-1。     

新铌酸盐A5LaSn3Nb7O30(A=Ba,Sr)的结构与介电特性

通过固相反应法,在AO-La2O3-SnO2-Nb2O5(A=Ba,Sr)体系合成了填满型钨青铜结构新铌酸盐Ba5LaSn3Nb7O30与Sr5LaSn3Nb7O30。采用X射线衍射分析和扫描电镜进行了结构分析,并测试了其介电性能。结果表明:Ba5LaSn3Nb7O30与Sr5LaSn3Nb7O30室温时均为四方钨青铜结构顺电相,其陶瓷体都具有高的介电常数、低的介电损耗与较小的介电常数温度系数。频率为1 MHz时,Ba5LaSn3Nb7O30陶瓷体的室温相对介电常数为171,介电损耗约为1.2×10-3;Sr5LaSn3Nb7O30陶瓷体的室温相对介电常数为164,介电损耗约为5.4×10-4。     

钽酸盐Ba5LaZnTa9O30的结构及其介电特性

在BaO-ZnO-Ta2O5体系中通过掺La3+合成了钽酸盐Ba5LaZnTa9O30采用粉晶X射线衍射(XRD)对其结构进行了分析,并测试了其陶瓷体的介电特性.结果表明,Ba5LaZnTa9O30在室温下属于填满型四方钨青铜结构顺电相,晶胞参数为a=1.259 09(4)nm,c=0.396 22(2)nm,α=β=y=90°;频率为1 MHz时Ba5LaZnTa9O30陶瓷的室温相对介电常数为89;而且介电损耗仅为0.006 7.     

纳米晶Ba(Zr0.2 Ti0.8)O3薄膜的外延生长与介电特性

用脉冲激光沉积工艺在半导体(001)SrTiO3∶ω(Nb)=1.0%单晶基片上,外延生长出Ba(Zr0.2Ti0.8)O3(简称BZT)介电薄膜.在650℃原位退火10 min,薄膜为(001)外延生长的晶粒.薄膜的晶化特征与表面形貌用薄膜X-ray衍射仪和原子力显微镜测量完成.BZT薄膜(002)峰的半峰宽只有0.72°,说明薄膜晶化良好;薄膜的平均晶粒为90 nm,表面均方根粗糙度为4.3 nm,说明薄膜表面平整.在室温、100 kHz和500 kV/cm条件下,BZT的最大介电常数和调谐百分率分别达到317和65%.     

纳米晶Ba（Zr0．2Ti0．8）O3薄膜的外延生长与介电特性

用脉冲激光沉积工艺在半导体（001）SrTiO3：ω（Nb）=1．0％单晶基片上,外延生长出Ba（Zr0.2Ti0.8）O3（简称BZT）介电薄膜．在650℃原位退火10min,薄膜为（001）外延生长的晶粒．薄膜的晶化特征与表面形貌用薄膜X-ray衍射仪和原子力显微镜测量完成．BZT薄膜（002）峰的半峰宽只有0．72°,说明薄膜晶化良好;薄膜的平均晶粒为90nm,表面均方根粗糙度为4．3nm,说明薄膜表面平整．在室温、100kHz和500kV／cm条件下,BZT的最大介电常数和调谐百分率分别达到317和65％．     

(1-x)Pb(Sc1/2Ta1/2)O3-xPbTiO3陶瓷的结晶性能和介电特性

在钽钪酸铅中加入钛酸铅，形成具有复合钙钛矿结构的钽钪酸铅－钛酸铅固溶体，可以提高钽钪酸铅材料体系的居里点，降低其制备温度，从而扩大该体系的应用范围。用一步法合成了钽钪酸铅－钛酸铅陶瓷，测试了介电常数和温度的关系。实验结果表明，这种陶瓷的钙钛矿相含量均在90％以上，最高相含量达1005；该种陶瓷的工艺简单，合成温度低，钙钛矿含量高，有望在工业化生产中得到推广。     

Synthesis and Dielectric Properties of New Niobate Ba_5BiTi_3Nb_7O_(30)

1　ＩｎｔｒｏｄｕｃｔｉｏｎＦｅｒｒｏｅｌｅｃｔｒｉｃｓｗｉｔｈｔｈｅｔｅｔｒａｇｏｎａｌｔｕｎｇｓｔｅｎｂｒｏｎｚｅｓｔｒｕｃｔｕｒｅａｒｅｔｈｅｉｎｔｅｒｅｓｔｉｎｇｃｏｍｐｏｕｎｄｓｂｅｃａｕｓｅｏｆｔｈｅｉｒｈｉｇｈｅｌｅｃｔｒｏ ｏｐｔｉｃ ,ｐｉｅｚｏｅｌｅｃｔｒｉｃ ,ｎｏｎｌｉｎｅａｒｏｐｔｉｃａｌｅｆｆｉｃｉｅｎ ｃｉｅｓａｎｄｉｔｓｉｎｔｅｒｅｓｔｉｎｇｆｅａｔｕｒｅｓｆｒｏｍｔｈｅｖｉｅｗｐｏｉｎｔｏｆｐｈａｓｅｔｒａｎｓｉｔｉｏｎｓ[1- 3] .Ｔｕｎｇｓｔｅｎｂｒｏｎｚｅｓｔｒｕｃ…     

Ba3La2Ti2Ta2O15: A New Microwave Dielectric of A5B4O15-type Cation-deficient Perovskites

The synthesis, structure and properties of a new A5B4O15-type cation-deficient perovskite Ba3La2Ti2Ta2O15 were discribed. The compound was prepared by the conventional solid-state reaction route. The phase and structure of the ceramics were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM). The results reveal that the compound is successfully synthesized. The compound crystallizes in the trigonal system with unit cell parameter a=5.6730(2) A, c=11.6511(2) A, V=324.93(1) A3 and Z=1. The microwave dielectric properties of the ceramic are studied using a network analyzer, and it shows a high dielectric constant of 45.1, a high quality factors with Q×f of 21029GHz, and a positive τf of 5.3ppm℃-1.     

Cr_2O_3及Nb_2O_5掺杂CaCu_3Ti_4O_(12)陶瓷结构与介电性能

采用固相法制备了Cr2O3、Nb2O5掺杂的钛酸钙铜基高介电陶瓷,研究了Cr2O3、Nb2O5掺杂对CaCu3Ti4O12(CCTO)陶瓷晶体结构、显微结构及介电性能的影响.结果表明:当掺杂量x在所研究区域质量分数0~0.8%之间时,样品均形成纯钙钛矿固溶体;两种掺杂对钛酸钙铜陶瓷的晶体生长均有抑制作用,Cr2O3掺杂的样品在1100℃致密成瓷,Nb2O5掺杂的样品在1080℃致密成瓷;当Cr2O3掺杂量为质量分数0.4%、Nb2O5掺杂量为质量分数0.4%时,与纯CCTO相比,两种掺杂对陶瓷的介电性能均有明显的改善作用,室温、1kHz下陶瓷的介电损耗分别为0.04、0.17,Cr2O3掺杂钛酸钙铜陶瓷性能要优于Nb2O5掺杂的钛酸钙铜陶瓷.     

Structure and Dielectric Properties of ZnO and Nb2O5 Doped BaO-TiO2 System Microwave Ceramics

The microwave dielectric properties and microstructure of BaTi4.3ZnyO9.6 y 0.02 mol% SnO2 0.01 mol% MnCO3 x mol% Nb2O5(x=0-0.05, y=0-0.08) system ceramics were studied as a function of the amount of ZnO and Nb2O5 doped. Addition of (y=0-0.05) ZnO and (x=0-0.025) Nb2O5 enhanced the reactivity and decreased the sintering temperature effectively. It also increased the dielectric constant εr and quality factor Q(=1/tan δ) of the system due to the substitution of Ti4 ions with incorporating Zn2 and Nb5 ions, which was analyzed by the reaction ZnO Nb2O5 3 TiTiX→ZnTi 2NbTi 3TiO2. When the system doped with (y=0.05) ZnO and (x=0.025) Nb2O5 were sintered at 1 160 ℃ for 6 h, the εr, Qfo value and τf were 36.5, 42 000 GHz, and 1.8 ppm/℃, respectively, at 5 GHz.     

Ba1+x(Mg1/3Nb2/3)O3 陶瓷的烧结行为和微波介电性能

研究了A位Ba离子化学计量比变化对Ba(Mg1/3Nb2/3)O3陶瓷烧结行为、微观结构和微波介电性能的影响.结果表明,Ba缺量可促进Ba(Mg1/3Nb2/3)O3烧结和B位1∶2有序,而Ba过量则阻碍Ba(Mg1/3Nb2/3)O3烧结和B位1∶2有序.Ba缺量促进Ba(Mg1/3Nb2/3)O3烧结和B位1∶2有序是由于Ba缺位的存在,而Ba过量阻碍Ba(Mg1/3Nb2/3)O3烧结则是由于过量的Ba可能以游离态存在于晶界,阻碍了晶界的移动,从而降低了Ba(Mg1/3Nb2/3)O3陶瓷的烧结性能,抑制了致密化过程.Ba缺量对Ba(Mg1/3Nb2/3)O3陶瓷的介电常数影响不大.Ba缺量越多,材料的Qf值越低.     

Synthesis and Characteristic of a New Niobate: Ba_5NaCr_(0.5)Nb_(9.5)_O_(30)

1　IntroductionTungsten bronze type (TTB)neonatematerialshavereceivedconsiderableattentionbecauseoftheirdielectricandferroelectricpropertiesandeaseofpreparation[1 5] .Thebronzecompositionscanberepresentedbythegeneralformulasas (A1 ) 4 (A2 ) 2 C4B1 0 O3 0…     

(Ba_(1-3x/2)Ce_xCa_(x/2))Ti_(1-x/4)O_3陶瓷的结构及介电性能研究

采用X射线衍射(XRD)、拉曼光谱(RS)、电子顺磁共振(EPR)、扫描电子显微镜(SEM)和介电测试技术研究(Ba1-3x/2CexCax/2)Ti1-x/4O3陶瓷的结构及介电性能.结果表明:随掺杂量x增加,发生四方-立方结构转变,以45°附近两个分立的(002)/(200)衍射峰演变为单一对称的(200)衍射峰为标志;(Ba1-3x/2CexCax/2)Ti1-x/4O3陶瓷显示一级相变(FPT)的介电行为,具有较高的介电常数和低介电损耗(tanδ0.04).     

Ba1-xBix(Ti0.9Zr0.1)O3陶瓷的介电弛豫特征

采用固相反应法制备了Ba1-xBix(Ti0.9Zr0.1)O3(x=0.01,0.02,0.03,0.04)陶瓷,X射线衍射分析表明所有样品均是四方晶体结构,3%mol的Bi3+能够完全溶入钙钛矿晶格中.不同频率下Ba1-xBix(Ti0.9Zr0.1)O3陶瓷的介电温谱显示所有样品均表现出弥散相变的特征,在x≥0....