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 共查询到15条相似文献,搜索用时 46 毫秒
1.
在28℃.3.25A直流电下,对Cu/Sn3.0Ag0.5Cu/Cu对接无铅焊点进行原位电迁移实验,观察了通电120,168,384和504 h后焊点横截面的微观组织形貌.结果表明,电迁移初期,Cu<,6>Sn<,5>化合物遍布整个焊点截面,随时间延长,不断从阴极向阳极迁移聚集;当通电504 h后,焊点内已看不到金属间...  相似文献   

2.
为了研究电迁移过程中焊点与焊盘界面金属问化合物(IMC)的变化,在28℃下,对无铅Sn3.0Ag0.5Cu焊点进行了6.5A直流电下的电迁移实验.结果发现,通电144h后,阳极侧IMC层变厚,平均达到10.12 μm;阴极侧IMC层大部分区域变薄至0.86μm,局部出现Cu焊盘的溶解消失,但在界面边缘处出现Cu3Sn5...  相似文献   

3.
研究了Sn37Pb,Sn3.0Ag0.5Cu和Sn0.7Cu三种焊料BGA焊点在电迁移作用下界面的微观组织结构.在60℃,1×103 A/cm2电流密度条件下通电187h后,Sn37 Pb焊点阴极界面已经出现了空洞,同时在阳极有Pb的富集带;Sn3.0Ag0.5Cu焊点的阴极界面Cu基体大量溶解,阳极金属间化合物层明显比阴极厚;对于Sn0.7Cu焊料,仅发现阳极金属间化合物层厚度比阴极厚,阴极Cu基体的溶解不如SnAgCu明显,电迁移破坏明显滞后.  相似文献   

4.
研究了Sn37Pb,Sn3.0Ag0.5Cu和Sn0.7Cu三种焊料BGA焊点在电迁移作用下界面的微观组织结构.在60℃,1×103 A/cm2电流密度条件下通电187h后,Sn37 Pb焊点阴极界面已经出现了空洞,同时在阳极有Pb的富集带;Sn3.0Ag0.5Cu焊点的阴极界面Cu基体大量溶解,阳极金属间化合物层明显比阴极厚;对于Sn0.7Cu焊料,仅发现阳极金属间化合物层厚度比阴极厚,阴极Cu基体的溶解不如SnAgCu明显,电迁移破坏明显滞后.  相似文献   

5.
用直径为200~500μm的Sn-3.0Ag-0.5Cu无铅焊球分别在Ni和Cu焊盘上制作焊点,并对焊后和时效200h后的焊点进行剪切测试,并采用SEM观察剪切断口形貌。结果表明,焊后和时效200 h后焊点接头的剪切强度都随焊球尺寸增大而减小。焊后断口处韧窝形状为抛物线型,断裂方式为韧性断裂;随着焊球尺寸的增大,剪切断口处的韧窝数量增多,韧窝的变小变浅。时效200 h后,韧窝变浅,趋于平坦,韧窝数量也明显减少,材料的韧性下降,脆性增加,断裂方式由韧性向脆性发生转变。  相似文献   

6.
通过电迁移和热疲劳循环实验,研究了热循环和高电流密度耦合作用下Sn58Bi和Sn3.0Ag0.5Cu钎料焊接接头的失效形式。实验结果表明,在通电和高低温冲击的耦合作用下,两种钎料接头的失效都发生在升温阶段。热循环导致接头内部裂纹的萌生和扩展,导致局部电流密度持续增大,加速了电迁移的发生,最终导致焊点失效。在热电耦合作用下,Sn58Bi钎料接头的使用寿命要长于Sn3.0Ag0.5Cu钎料接头的使用寿命。  相似文献   

7.
运用莱卡显微镜、扫描电镜和能谱分析等手段,研究了稀土元素La的添加量对Sn3.5Ag0.5Cu钎料及其与Cu基体焊接后微观组织及性能的影响。结果表明:添加不同含量的稀土La均能使钎料及其与Cu基体焊接后组织与性能得到改善,其中以w(La)达到0.05%时为最优,显微硬度及剪切强度分别提高14%和10.7%。键参数函数计算结果表明La具有"亲Sn"倾向,可细化钎料组织,降低IMC(界面金属间化合物)的长大驱动力。  相似文献   

8.
提出了一种对微电子封装器件中焊点剪切强度进行测试的方法,可有效降低测试误差。利用该方法,对Sn—Ag—Cu无铅焊料分别在Cu基板和Ni-P基板上形成的焊点,经不同的热时效后的剪切强度进行了测量,并对断裂面的微观结构进行了研究。结果表明,新的剪切测试方法误差小,易于实施,焊点剪切强度、断裂面位置与焊料在不同基板界面上金属间化合物的形貌、成分有关。  相似文献   

9.
基于ANSYS有限元软件,综合考虑电子风力、温度梯度、应力梯度和原子密度梯度四种电迁移驱动机制,采用原子密度积分法(ADI)对倒装芯片球栅阵列封装(FCBGA)的Sn0.7Cu无铅焊点进行电迁移失效模拟。针对焊点直径、焊点高度、焊点下金属层(UBM)厚度三个关键参数进行电迁移失效的正交试验优化,探究焊点尺寸对电迁移失效的影响。研究表明:焊点直径和高度的增加会缩短焊点的电迁移失效寿命(TTF),而UBM层厚度对焊点失效寿命的影响相对较小;焊点局部拉应力对焊点的失效寿命影响较大,通常会加剧焊点的空洞失效。  相似文献   

10.
通过SEM和EDAX等,研究了La添加量对Sn3.5Ag0.5Cu钎料与Cu基体焊合界面IMC微观组织及性能的影响。结果表明:添加不同量的La均对Sn3.5Ag0.5Cu与Cu基体焊合后的组织有细化作用并增强其力学性能。其中以w(La)达到0.05%时最优,剪切强度可提高10.7%。材料热力学理论计算结果表明,La具有"亲Sn"倾向,添加少量La到Sn3.5Ag0.5Cu钎料中,可减小Cu6Sn5/Cu界面Sn的活度,降低IMC的长大驱动力。  相似文献   

11.
The intermetallic compounds formed in Sn3Ag0.5Cu and Sn3Ag0.5Cu0.06Ni0.01Ge solder BGA packages with Ag/Cu pads are investigated. After reflow, scallop-shaped η-Cu6Sn5 and continuous planar η-(cu0.9Ni0.1)6Sn5 intermetallics appear at the interfaces of the Sn3Ag0.5Cu and Sn3Ag0.5Cu0.06Ni0.01Ge solder joints, respectively. In the case of the Sn3Ag0.5Cu specimens, an additional ε-Cu3Sn intermetallic layer is formed at the interface between the η-Cu6Sn5 and Cu pads after aging at 150°C, while the same type of intermetallic formation is inhibited in the Sn3Ag0.5Cu0.06Ni0.01Ge packages. In addition, the coarsening of Ag3Sn precipitates also abates in the solder matrix of the Sn3Ag0.5Cu0.06Ni0.01Ge packages, which results in a slightly higher ball shear strength for the specimens.  相似文献   

12.
《Microelectronics Reliability》2014,54(11):2513-2522
Appropriate constitutive, damage accumulation and fracture models are critical to accurate life predictions. In this study, we utilize the maximum entropy fracture model (MEFM) to predict and validate cyclic hysteresis in Sn3.8Ag0.7Cu and Sn3.0Ag0.5 solder alloys through a damage enhanced Anand viscoplasticity model. MEFM is a single-parameter, information theory inspired model that aims to provide the best estimate for accumulated damage at a material point in ductile solids in the absence of detailed microstructural information. Using the developed model, we predict the load drop during cyclic fatigue testing of the two chosen alloys. A custom-built microscale mechanical tester was utilized to carryout isothermal cyclic fatigue tests on specially designed assemblies. The resultant relationship between load drop and accumulated inelastic dissipation was used to extract the geometry and temperature-independent damage accumulation parameter of the maximum entropy fracture model for each alloy. The damage accumulation relationship is input into the Anand viscoplastic constitutive model, allowing prediction of the stress–strain hysteresis and cyclic load drop. The damage accumulation model is validated by comparing predicted and measured load drops after 55 and 85 cycles respectively for Sn3.8Ag0.7Cu and Sn3.0Ag0.5 solder alloys. The predictions agreed to within 10% and 20% of the experimental observations respectively for the two alloys. The damage enhanced Anand model developed in this study will enable the tracking of crack fronts during finite element simulations of fatigue crack initiation and propagation in complex solder joint geometries.  相似文献   

13.
The intermetallic compounds (IMCs) formed during the reflow and aging of Sn3Ag0.5Cu and Sn3Ag0.5Cu0.06Ni0.01Ge solder BGA packages with Au/Ni surface finishes were investigated. After reflow, the thickness of (Cu, Ni, Au)6Sn5 interfacial IMCs in Sn3Ag0.5Cu0.06Ni0.01Ge was similar to that in the Sn3Ag0.5Cu specimen. The interiors of the solder balls in both packages contained Ag3Sn precipitates and brick-shaped AuSn4 IMCs. After aging at 150°C, the growth thickness of the interfacial (Ni, Cu, Au)3Sn4 intermetallic layers and the consumption of the Ni surface-finished layer on Cu the pads in Sn3Ag0.5Cu0.06Ni0.01Ge solder joints were both slightly less than those in Sn3Ag0.5Cu. In addition, a coarsening phenomenon for AuSn4 IMCs could be observed in the solder matrix of Sn3Ag0.5Cu, yet this phenomenon did not occur in the case of Sn3Ag0.5Cu0.06Ni0.01Ge. Ball shear tests revealed that the reflowed Sn3Ag0.5Cu0.06Ni0.01Ge packages possessed bonding strengths similar to those of the Sn3Ag0.5Cu. However, aging treatment caused the ball shear strength in the Sn3Ag0.5Cu packages to degrade more than that in the Sn3Ag0.5Cu0.06Ni0.01Ge packages.  相似文献   

14.
Electroless Ni-P/Cu under-bump metallization (UBM) is widely used in electronics packaging. The Sn3.0Ag0.5Cu lead-free composite solder pastes were produced by a mechanical alloying (MA) process doped with Cu6Sn5 nanoparticles. In this study, the detailed interfacial reaction of Sn3.0Ag0.5Cu composite solders with EN(P)/Cu UBM was investigated after reflow. A field-emission scanning electron microscope (FESEM) was employed to analyze the interfacial morphology and microstructure evolution. The intermetallic compounds (IMCs) formed at the interface between the Sn3.0Ag0.5Cu composite solders and EN(P)/Cu UBM after one and three reflows were mainly (Ni1−x,Cux)3Sn4 and (Cu1−y,Niy)6Sn5. However, only (Ni1−x,Cux)3Sn4 IMC was observed after five reflows. The elemental distribution near the interfacial region was evaluated by an electron probe microanalyzer (EPMA) as well as field-emission electron probe microanalyzer (FE-EPMA). Based on the observation and characterization by FESEM, a EPMA, and an FE-EPMA, the reaction mechanism of interfacial phase transformation between Sn3.0Ag0.5Cu composite solders and EN(P)/Cu UBM after various reflow cycles was discussed and proposed.  相似文献   

15.
It has been discovered for the first time that Sn whiskers appeared in Sn3Ag0.5Cu0.5Ce solder joints of ball grid array (BGA) packages after storage at room temperature (natural aging) for less than 3 days and they grew at a high rate of 2.9 ?/sec. In one particular case, whiskers even formed after 1 day of storage at an extremely high growth rate of 8.6 ?/sec. Experimental investigations showed that a number of CeSn3 clusters existed in the Sn3Ag0.5Cu0.5Ce solder matrix after the reflow process. Further natural aging in air for several days caused the CeSn3 phases to oxidize rapidly, from which many Sn whiskers sprouted and grew to a length of hundreds of micrometers. The most commonly observed whiskers have been long fiber-shaped ones of 0.1 μm to 0.3 μm in diameter (type I), while short whiskers larger than 1 μm in diameter can also be found (type II). Here in our case, the surface oxide of the CeSn3 phase possessed a higher content of Ce than of Sn, which implied that a Ce-depleted region (nearly of pure Sn) was left beneath the oxide layer. The abnormal whisker growth was attributed to the compressive stress squeezing the Sn atoms in the Ce-depleted region of CeSn3 phase out of the oxide layer.  相似文献   

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