Microstructural,ferroelectric, and photoluminescent properties of (100)‐oriented Sm3+‐doped Na0.5Bi0.5TiO3 thin films

(100)_C‐oriented Na_0.5Bi_0.5‐xSm_xTiO₃ (NBST) lead‐free ferroelectric thin films were prepared on Pt/Ti/SiO₂/Si substrates by chemical solution deposition method, and their microstructural, dielectric, ferroelectric, and photoluminescent properties were studied. X‐ray diffraction and scanning electron microscopy analysis indicated that both the grain size and (100)_C orientation degree of NBST thin films were decreased by doping Sm³⁺ ions. Raman spectra showed that structural symmetry of NBST thin films decreased at low Sm³⁺ doping concentration and then increased at high doping concentration of Sm³⁺ ions. An appropriate amount of Sm³⁺ dopants was confirmed to enhance dielectric and ferroelectric properties of the NBST thin films. Among all the compositions, the Na_0.5Bi_0.492Sm_0.008TiO₃ thin film exhibited the largest remnant polarization (2P_r) of 27.3 μC/cm² and high dielectric constant of 1068, as well as a low dielectric loss of 0.04. Temperature‐ and frequency‐dependent dielectric characteristics illustrated the relaxor ferroelectric behavior of Na_0.5Bi_0.492Sm_0.008TiO₃ thin film. Meanwhile, the Na_0.5Bi_0.492Sm_0.008TiO₃ thin film also showed optimal orange‐red emission at 600 nm, which is originating from the ⁴G_5/2 → ⁴H_7/2 transition of Sm³⁺ ions.     

Revealing the relationship between morphotropic phase boundary and tolerance factor of Bi0.5Na0.5TiO3-based thin films

The positions of morphotropic phase boundary (MPB) in ferroelectric ceramics with perovskite structure are reported to be closely related to the tolerance factors (t) of the materials, however, similar studies focusing on ferroelectric thin films are still very rare. In this work, Bi_0.5Na_0.5TiO₃–BaTiO₃–BiInO₃ thin films, Bi_0.5Na_0.5TiO₃–SrTiO₃–BiInO₃ thin films and Bi_0.5Na_0.5TiO₃–PbTiO₃–BiInO₃ thin films with different BiInO₃ contents were synthesized by using metal organic decomposition method in order to study the MPB–t relationship, and the MPB positions of all three groups of thin films were found to be located in the t range of 0.9815–0.9820 after a combined analysis of their microstructure and macroscopic physical properties, which points out an easy way to predict the MPB position of BNT-based thin films by calculating their t values.     

Ultra-high strain responses in lead-free (Bi0.5Na0.5)TiO3-BaTiO3-NaNbO3 ferroelectric thin films

Lead-free (Bi_0.5Na_0.5)TiO₃ (BNT)-based piezoelectric materials, have a great potential for high-precision actuators’ applications. In this work, the high-quality (0.94-x%)(Bi_0.5Na_0.5)TiO₃-0.06BaTiO₃-x%NaNbO₃ (x = 2–10, BNT-6BT-xNN) thin films have been successfully deposited on Pt/TiO₂/SiO₂/Si substrates by sol-gel method. An ultra-high poling strain S_pol value of 1.7% with a unipolar strain S_uni value of 1.47% was reported in the BNT-6BT-6NN thin films. The coexistence of the ferroelectric phase and relaxor state was observed in the compositions of x = 2–8. Furthermore, the BNT-6BT-6NN thin films show more active domain switching compared to other compositions. It is demonstrated that the optimized strain responses in the BNT-6BT-6NN are attributed to a synergistic reaction of active domain switching and reversible electric-field-induced phase transition between the ferroelectric phase and relaxor state. Our systematic study demonstrates that the BNT-6BT-xNN thin films with an improved strain response are promising candidates for the applications of miniaturized actuators.     

Morphotropic Phase Boundary in Solution‐Derived (Bi0.5Na0.5)1−xBaxTiO3 Thin Films: Part II Functional Properties and Phase Stability

The analysis of the functional properties (ferroelectric, dielectric, and piezoelectric) of chemical solution deposited thin films of the lead‐free (Bi_0.5Na_0.5)_1?xBa_xTiO₃ (BNBT) solid solution prepared from solution precursors with and without Na⁺ and Bi³⁺ excesses has been performed in this work. At room temperature a nonergodic relaxor ferroelectric state has been found. The switched polarization of the films is not stable at room temperature, poor remnant polarization, associated with an enhancement of the induced domains randomization produced by the films constraints. The depolarization temperature for the switched polarization allowed us to build up a tentative phase diagram for these BNBT films. Both the better functional properties and the agreement of the depolarization temperature with the freezing temperature of the relaxor Volger–Fulcher behavior permit to locate the center of the morphotropic phase boundary region close to x = 0.055 in the stoichiometric films and x = 0.10 for the films with Na⁺ and Bi³⁺ excesses. Based on these results, the possible applications of these films are discussed.     

Construction of multi-domain coexistence enhanced piezoelectric properties of Bi0.5Na0.5TiO3-based thin films

Although the multi-phase coexistence makes Bi_0.5Na_0.5TiO₃-based piezoelectric thin films possess stronger piezoelectric properties and more spacious application prospects in electronic devices, the domain reversal mechanism of Bi_0.5Na_0.5TiO₃-based thin films cannot be accurately understood due to the size effect. In this study, the relationship between domain structure and piezoelectric properties of the (0.94-x)Bi_0.5Na_0.5TiO₃-0.06BaTiO₃-xBi(Fe_0.95Mn_0.03Ti_0.02)O₃ thin films are studied by using visualization technology PFM, structure and electrical properties characterizations. The results show that the addition of Bi(Fe_0.95Mn_0.03Ti_0.02)O₃ creates a long-range ordered/short-range disordered nanodomain coexisting structure. This kind of coexisting domain structure can realize the long-range reversal driven by disordered nanodomains under the external electric field, reduce the potential barrier and the hysteresis, and significantly enhance the piezoelectric properties of the thin films. Under the same conditions, the piezoelectric properties of the 0.94Bi_0.5Na_0.5TiO₃-0.06BaTiO₃ thin films are enhanced nearly 2.3 times. This provides a reference for exploring the physical mechanism of high performance lead-free piezoelectric thin films.     

Electrostatic energy storage performances of La(Ni2/3Ta1/3)O3-modified Na0.5Bi0.5TiO3 lead-free ceramics

Ceramic capacitors with high electrostatic energy storage performances have captured much research interest in latest years. Sodium bismuth titanate (Na_0.5Bi_0.5TiO₃)-based ferroelectric ceramics show great potential due to their environment-friendly composition, high polarization, and excellent relaxor properties. However, the nonergodic relaxor state of Na_0.5Bi_0.5TiO₃-based ceramics hampers the decrement of remanent polarization, leading to poor energy storage performance. Herein, the (1 − x)Na_0.5Bi_0.5TiO₃–xLa(Ni_2/3Ta_1/3)O₃ ceramics were designed to generate the transformation between nonergodic and ergodic relaxor state. As a result, the ceramics exhibit improved dielectric relaxation, slim polarization–electric field loops, and flattened current–electric field curves due to highly dynamic polar nanoregions. Particularly, the 0.85Na_0.5Bi_0.5TiO₃–0.15La(Ni_2/3Ta_1/3)O₃ ceramics show large breakdown electric field E_b (345 kV/cm), high recoverable energy density W_rec (3.6 J/cm³), and efficiency η (80.6%), revealing potential applications in electrostatic energy storage.     

Optimized energy storage performances in morphotropic phase boundary (Na0.8K0.2)0.5Bi0.5TiO3-based lead-free ferroelectric thin films

As microelectronic devices move toward integration and miniaturization, the thin film capacitors with high energy density and charge/discharge efficiency have attracted immense interests in modern electrical energy storage systems. Despite morphotropic phase boundary (Na_0.8K_0.2)_0.5Bi_0.5TiO₃-based lead-free materials with outstanding ferroelectric and piezoelectric properties, while large ferroelectric hysteresis with high remanent polarization (P_r) hinder to improve energy storage capability. Here, novel lead-free relaxor-ferroelectric (RFE) thin film capacitors with high energy density are successfully prepared in (1-x) (Na_0.8K_0.2)_0.5Bi_0.5TiO₃-xBa_0.3Sr_0.7TiO₃ [(1-x)NKBT-xBST] systems. Introducing BST into the NKBT systems is expected to reduce remanent polarization (P_r) on account of coupling reestablishment of the polar nano-regions (PNRs) and improving the relaxation behavior. As a result, 0.6NKBT-0.4BST thin film exhibits high energy density (W_rec ～ 54.79 J/cm³) together with satisfactory efficiency (η ～ 76.42%) at 3846 kV/cm. The stable energy storage performances are achieved within the scope of operating temperatures (20–200 °C) and fatigue cycles (1-10⁷ cycles). This work furnishes a new technological way for the design of high energy-density thin film capacitors.     

Thickness-dependent switching behavior of 0.8(Bi0.5Na0.5)TiO3-0.2SrTiO3 lead-free piezoelectric thin films

0.8(Bi_0.5,Na_0.5)TiO₃-0.2SrTiO₃ (BNT-0.2ST) thin films, with thicknesses ranging from 90 to 364 nm, were fabricated on platinized silicon substrates by sol-gel method. These films were investigated by switching spectroscopy piezoresponse force microscope (SS-PFM) as a function of frequency at room temperature, revealing the enhanced ferroelectric response in ∼ 210 nm film at all frequencies (0.1 Hz - 1.5 Hz). This enhancement was ascribed to the largest thermally-activated stress at such thicknesses generated during film fabrications. As the temperature of the investigated films increases from room temperature to 200 ^oC, the piezoelectric parameters were obtained from SS-PFM, such as switching polarization (R_s), coercive bias (V₀), work of switching (A_s), maximum strain (S_max), and negative strain (S_neg), indicating an occurrence of phase transition from ferroelectrics to relaxors. This work revealed that thickness plays a crucial role for ferroelectric response and temperature-dependent phase transition in BNT-0.2ST films, since it affects the stress state and switching behavior.     

Tailoring structural and electrical properties of A-site non-stoichiometric Na0.5Bi0.5TiO3 ceramic at different sintering temperature

Na/Bi stoichiometry plays crucial role in determining various properties of sodium bismuth titanate-based system. In this work, we have synthesised lead free (Na_0.5Bi_0.5)_1+x TiO₃ (x?=?0, 0.02 and 0.05) ceramics by sol-gel method and systematically presented structural, dielectric and ferroelectric properties at different sintering temperature. Single phase perovskite structure with rhombohedral symmetry (R3c) is obtained for all compositions from low (850°C) to maximum (1150°C) sintering temperature. The shifting of x-ray diffraction peaks and characteristic perovskite metal-oxide vibrational band (～627?cm^?1) in Fourier Transform Infra-red spectra suggests compression or expansion of crystal lattice with Na/Bi non-stoichiometry. Excess of Na/Bi comprises dense crystal growth as compared to pure Na_0.5Bi_0.5TiO₃ composition suggesting compensation of volatile elements loss during heat treatment whose impact has also been observed in dielectric as well as ferroelectric properties. It is observed that Na_0.51Bi_0.51TiO₃ sample with x?=?0.02 exhibits better structural, dielectric and ferroelectric properties in whole range of sintering temperature.     

Large Piezoelectricity and Ferroelectricity in Mn‐Doped (Bi0.5Na0.5)TiO3‐BaTiO3 Thin Film Prepared by Pulsed Laser Deposition

Mn‐doped (Bi_0.5Na_0.5)_0.94Ba_0.06TiO₃ (MnBNBT) thin films were prepared on SrRuO₃ (SRO)‐coated (001) SrTiO₃ (STO) single crystal substrates by pulsed laser deposition under different processing conditions. Structural characterization (i.e., XRD and TEM) confirms the epitaxial growth of STO/SRO/MnBNBT heterostructures. Through the judicious control of deposition temperature, the defect level within the films can be finely tuned. The MnBNBT thin film deposited at the optimized temperature exhibits superior ferroelectric and piezoelectric responses with remanent polarization P_r of 33.0 μC/cm² and piezoelectric coefficient d₃₃ of 120.0 ± 20 pm/V.     

Ergodicity of fine-grained canonical relaxor ferroelectric (Bi0.5Na0.5)1-xBaxTiO3 films

The drastic reduction in dimensions in thin films, together with the low crystallization temperatures used, normally results in a large reduction in the grain size. It has been reported that relaxor ferroelectric states are stabilized at room temperature for fine-grained ceramics and films that behave as normal ferroelectrics for large grains. In this work, the effects of the grain size reduction on the relaxor characteristics are analyzed for a composition that is already a canonical relaxor with a nonergodic state at room temperature: (Bi_0.5Na_0.5)_1-xBa_xTiO₃ (BNBT). The comparison of the local polar ordering within BNBT grains studied with piezoresponse force microscopy on large-grained ceramics and fine-grained thin films shows that the development of stable long-range ferroelectric order with the application of an electric field is hampered due to the small grain size of the grains. The ergodic character of the high-temperature phase is thus stabilized at room temperature, following a similar mechanism as the one discussed for other noncanonical relaxors.     

Structural phase transition,electrical and photoluminescent properties of Pr3+-doped (1-x)Na0.5Bi0.5TiO3-xSrTiO3 lead-free ferroelectric thin films

Lead-free ferroelectric Pr³⁺-doped (1-x)Na_0.5Bi_0.5TiO₃-xSrTiO₃ (x?=?0–0.5) (hereafter abbreviated as Pr-NBT-xSTO) thin films were prepared on Pt/Ti/SiO₂/Si and fused silica substrates by a chemical solution deposition method combined with a rapid thermal annealing process at 700?°C, and their structural phase transition, dielectric, ferroelectric, and photoluminescent properties were investigated as a function of STO content. Raman analysis shows that with increasing STO content, the phase structures evolve from rhombohedral phase to coexistence of rhombohedral and tetragonal phases (i.e. morphotropic phase boundary), and then to tetragonal phase. The structural phase transition behavior has been well confirmed by temperature- and frequency- dependent dielectric measurements. Meanwhile, the variation in photoluminescence intensity of Pr³⁺ ions with different STO content in the NBT-xSTO thin films also indicates that there exists a clear structural phase transition when the film composition is close to the morphotropic phase boundary. Superior dielectric and ferroelectric properties are obtained in the Pr-NBT-0.24STO thin films due to the formation of morphotropic phase boundary. Our study suggests that Pr-NBT-xSTO thin films be promising multifunctional materials for optoelectronic device applications.     

Enhanced pyroelectric response from domain-engineered lead-free (K0.5Bi0.5TiO3-BaTiO3)-Na0.5Bi0.5TiO3 ferroelectric ceramics

Enhanced pyroelectric response is achieved via domain engineering from [001] grain-oriented, tetragonal-phase, lead-free 0.2(2/3K_0.5Bi_0.5TiO₃-1/3BaTiO₃)-0.8Na_0.5Bi_0.5TiO₃ (KBT-BT-NBT) ceramics prepared by a templated grain growth method. The [001] crystallographic orientation leads to large polarization in tetragonal symmetry; therefore, texturing along this direction is employed to enhance the pyroelectricity. X-ray diffraction analysis revealed a Lotgering factor (degree of texturing) of 93 % along the [001] crystallographic direction. The textured KBT-BT-NBT lead-free ceramics showed comparable pyroelectric figures of merit to those of lead-based ferroelectric materials at room temperature (RT). In addition to the enhanced pyroelectric response at RT, an enormous enhancement in the pyroelectric response (from 1750 to 90,900 μC m^?2 K^?1) was achieved at the depolarization temperature because of the sharp ferroelectric to antiferroelectric phase transition owing to coherent 180° domain switching. These results will motivate the development of a wide range of lead-free pyroelectric devices, such as thermal sensors and infra-red detectors.     

Piezoelectric enhancement and vacancy defect reduction of lead-free Bi0.5Na0.5TiO3-based thin films

To explore new lead-free piezoelectric materials that is both environmentally friendly and healthy to provide the possibility for material selection for microelectromechanical systems. Lead-free piezoelectric (1-x)(0.8Bi_0.5Na_0.5TiO₃-0.2Bi_0.5K_0.5TiO₃)-xBi(Ni_0.5Zr_0.5)O₃ thin films (abbreviated as BNT-BKT-xBNZ) (x=0.00, 0.01, 0.02, 0.03, 0.04) were prepared on Pt(111)/Ti/SiO₂/Si substrates by a sol-gel method. Impacts of Bi(Ni_0.5Zr_0.5)O₃ content on the microstructure, dielectric, ferroelectric, and piezoelectric properties were also investigated detailedly. It found that the Bi(Ni_0.5Zr_0.5)O₃ composition had a great influence on the increase of relaxor and the decrease of the oxygen vacancies, which is influential to the promotion of thin-film properties. Thin-film of BNT-BKT-0.02BNZ showed the optimum electrical properties with the polarization of 40.27 μC/cm², dielectric constants of 477 and effective inverse piezoelectric coefficient reach up to 125.9 p.m./V. Results revealed that the BNT-BKT thin films with 0.02 mol% Bi(Ni_0.5Zr_0.5)O₃-doped are a kind of lead-free piezoelectric materials with superior manifestations with a great development prospect for applications.     

Structural and dielectric properties of (Na0.5Bi0.5)0.70Ba0.30TiO3 ceramics

A (Na_0.5Bi_0.5)_0.70Ba_0.30TiO₃ ceramic has been studied by X-ray diffraction and by measurements of dielectric and ferroelectric properties between room temperature and 450 °C. A sharp increase in the electric permittivity and dielectric loss near 200 °C has been observed. This sharp increase in dielectric responses indicates a transformation between normal and relaxor ferroelectric states. It is found that polar regions can exist at higher temperatures. The X-ray diffraction study shows that the transformation corresponds to the first order phase transition from tetragonal to cubic. The use of the (Na_0.5Bi_0.5)_0.70Ba_0.30TiO₃ ceramic for device application has also been indicated.     

Temperature Stable Dielectric Behavior of Sol–Gel Derived Compositionally Graded SrTiO3/Na0.5Bi0.5TiO3/SrTiO3 Thin Films

Polycrystalline sol–gel‐derived SrTiO₃/Na_0.5Bi_0.5TiO₃/SrTiO₃ (ST/NBT/ST) thin films were designed to achieve the electrical isolation of the NBT, and to mediate the temperature dependency of the dielectric properties. Proper thermal annealing of particulate phase enabled us to achieve compositionally graded elemental profiles between individual ST and NBT layers. The dielectric and ferroelectric properties were investigated with respect to the electrical behavior of the monophasic ST and NBT thin films. The dielectric characteristics of the multilayer thin film were marked by a temperature stable behavior (temperature coefficient of dielectric constant of 780 ppm/°C) in the measured ?50°C to 200°C range, frequency‐independent response at room temperature and improved dielectric loss characteristics compared with the NBT; however, on the expense of decreased permittivity and a reduced ferroelectric stability. Nevertheless, stable dielectric properties were achieved and properties of multilayer may well be exploited in functional devices that demand insensitive operation over wide temperature and frequency ranges.     

Enhanced ferroelectric properties and thermal stability of Mn‐doped 0.96(Bi0.5 Na0.5)TiO3‐0.04BiAlO3 ceramics

(Bi_0.5Na_0.5)TiO₃–BiAlO₃ lead‐free materials exhibit excellent ferroelectric properties, but its depolarization temperature is relatively low which is the major obstacle limiting the material's practical application. In this study, the effects of Manganese (Mn) modification on the microstructure, ferroelectric properties and depolarization behavior of 0.96(Bi_0.5Na_0.5)(Ti_1?xMn_x)O₃–0.04BiAlO₃ ceramics were investigated. It was found that the average grain size was enlarged and ferroelectric properties were enhanced with small Mn addition, meanwhile the tangent loss decreased. The remnant polarization (P_r) of the samples reached an optimal value (~41 μC/cm²) as Mn content increased up to 0.7 mol%, whereas further addition resulted in the decrease in P_r. Moreover, appropriate Mn addition (x=0.7%) can improve the depolarization temperature from 140°C to 161°C determined from thermally stimulated depolarization currents measurement.     

Study of crystal structure,dielectric, magnetic and magnetoelecrtic properties of xCoFe2O4-(1-x)Na0.5Bi0.5TiO3 composites

Multiferroic composites of spinel ferrite and ferroelectric xCoFe₂O₄ – (1-x)Na_0.5Bi_0.5TiO₃ (with x = 0.10,0.30,0.50) were efficiently prepared by standard solid state reaction mechanism. X-ray diffractometer was used to analyze crystal structure of the prepared composites. The observed XRD patterns of the composites comprise peaks of both the phases i.e. ferrite and ferroelectric, with no sign of secondary peaks. Rietveld refinement of XRD data further confirms the coexistence of these two phases with cubic (Fd3m) and rhombohedral (R3c) symmetry corresponding to ferrite and ferroelectric phase respectively. The 3-dimensional overview of crystal structure of pure CoFe₂O₄ and Na_0.5Bi_0.5TiO₃ and of composite 0.50CoFe₂O₄?0.50Na_0.5Bi_0.5TiO₃ is generated by using refined parameters. The dielectric constant (ε´) and dielectric loss (tanδ) values were recorded as a function of frequency ranging from 100?Hz to 7?MHz and at different temperatures. Both ε´ and tanδ follow dispersion pattern at lower frequencies while show frequency independent behavior at higher frequencies. The magnetic evaluation carried by analyzing M-H hysteresis loop reveals the ferrimagnetic characteristics of these composites. The highest value of magnetic moment is 1.12μ_B observed for composite 0.50CoFe₂O₄ – 0.50Na_0.5Bi_0.5TiO_3. Magnetoelectric (ME) voltage coefficient (α) was also demonstrated to observe the interaction between ferrite and ferroelectric phases. The highest value of α (72.72μV/Oe cm) is obtained for low ferrite composition 0.10CoFe₂O₄ – 0.90Na_0.5Bi_0.5TiO₃, which suggests the dependence of magnetoelectric response on the resistivity of the composites.     

Enhanced dielectric and energy-storage properties in BiFeO3-modified Bi0.5(Na0.8K0.2)0.5TiO3 thin films

Lead free Bi_0.5(Na_0.8K_0.2)_0.5TiO₃ thin films doped with BiFeO₃ (abbreviated as BNKT-xBFO) (x = 0, 0.02, 0.04, 0.08, 0.10) were deposited on Pt(111)/Ti/SiO₂/Si substrates by sol-gel/spin coating technique and the effects of BiFeO₃ content on the crystal structure and electrical properties were investigated in detail. The results showed that all the BNKT-xBFO thin films exhibited a single perovskite phase structure and high-dense surface. Reduced leakage current density, enhanced dielectric and ferroelectric properties were achieved at the optimal composition of BNKT-0.10BFO thin films, with a leakage current density, dielectric constant, dielectric loss and maximum polarization of < 2 × 10⁻⁴ A/cm³, ~ 978^, ~ 0.028 and ~ 74.13 μC/cm² at room temperature, respectively. Moreover, the BNKT-0.10BFO thin films possessed superior energy storage properties due to their slim P-E loops and large maximum polarization, with an energy storage density of 22.12 J/cm³ and an energy conversion efficiency of 60.85% under a relatively low electric field of 1200 kV/cm. Furthermore, the first half period of the BNKT-0.10BFO thin film capacitor was about 0.15 μs, during which most charges and energy were released. The large recoverable energy density and the fast discharge process indicated the potential application of the BNKT-0.10BFO thin films in electrostatic capacitors and embedded devices.     

High energy storage properties of lead-free Mn-doped (1-x)AgNbO3-xBi0.5Na0.5TiO3 antiferroelectric ceramics

In this work, 0.2 wt.% Mn-doped (1-x)AgNbO₃-xBi_0.5Na_0.5TiO₃ (x = 0.00–0.04) ceramics were synthesized via solid state reaction method in flowing oxygen. The evolution of microstructure, phase transition and energy storage properties were investigated to evaluate the potential as high energy storage capacitors. Relaxor ferroelectric Bi_0.5Na_0.5TiO₃ was introduced to stabilize the antiferroelectric state through modulating the M₁-M₂ phase transition. Enhanced energy storage performance was achieved for the 3 mol% Bi_0.5Na_0.5TiO₃ doped AgNbO₃ ceramic with high recoverable energy density of 3.4 J/cm³ and energy efficiency of 62% under an applied field of 220 kV/cm. The improved energy storage performance can be attributed to the stabilized antiferroelectricity and decreased electrical hysteresis ΔE. In addition, the ceramics also displayed excellent thermal stability with low energy density variation (<6%) over a wide temperature range of 20−80 °C. These results indicate that Mn-doped (1-x)AgNbO₃-xBi_0.5Na_0.5TiO₃ ceramics are highly efficient lead-free antiferroelectric materials for potential application in high energy storage capacitors.