一款低功率下具有高效率的多模多频功率放大器

越来越多的移动通信协议要求射频功率放大器在低功率模式下具有高效率和低工作电流,为了满足这种需求,本文提出了一种全集成的多模多频射频功率放大器模块设计。本设计通过双路径的功率放大器实现了高功率、中功率和低功率三种模式,并且模块内部没有任何用于模式选择的串联开关。在不同功率模式下,通过最优化负载设计,不仅极大程度的降低了芯片的工作电流,而且实现了良好的工作性能。本设计采用InGaP/GaAs异质结双极晶体管工艺和0.18um的互补金属氧化物半导体工艺完成流片。芯片的实际测试结果显示在低功率模式下,该射频功率模块仅3mA的静态电流,并且在1.7-2.0 GHz带宽范围内高中低功率模式都实现了良好的射频性能,在高功率模式下,输出功率28dBm时,实现了至少39.4% 的功率附加效率和-40 dBc邻道泄漏比;在中功率模式下,输出功率17 dBm时,实现了至少21.3% 的功率附加效率和-43 dBc邻道泄漏比;在低功率模式下,输出功率8 dBm时,实现了至少18.2% 的功率附加效率和-40 dBc邻道泄漏比。     

高增益S波段小型化200 W功率模块研制技术

采用多级射频放大电路以及高压脉冲调制技术,实现了S波段高增益小型化200 W功率模块的研制。驱动放大电路采用GaAs功率单片进行功率合成;末级放大电路依托栅长(0.5 μm) GaN高电子迁移率晶体管(HEMT)芯片,选取多子胞结构来改善热分布,通过内匹配技术设计完成了双胞总栅宽24 mm GaN芯片的匹配网络,并设计高压脉冲调制电路提供电源,成功研制出了小型化的S波段200 W内匹配GaN功率模块。测试得出该模块实现了在输入功率10 dBm,栅极电压-5 V,漏极电压32 V,TTL调制信号输入条件下,输出频率在3.1~3.5 GHz处,输出功率大于200 W,功率附加效率(PAE)大于55%。模块实际尺寸为2.4 mm×38 mm×5.5 mm。     

混合动力汽车对功率模块稳定性的要求

汽车用功率半导体模块的的使用寿命取决于其工作环境和基于运行工况对其提出的稳定性要求。为了评估用于混合动力汽车（HEV）功率半导体模块所具备的热循环、功率循环能力,使用了汽车行驶工况循环曲线来计算模块的热可靠性要求。这种计算是基于模块损耗、热仿真模型和模块寿命模型。本文通过将功率模块连接至不同的冷却系统,探讨了主动／被动热应力条件下,诸如IGBT芯片焊接或绑定线连接等键合点。     

Plug N Drive^TM系列应用概况（三）——应用于电机驱动的集成功率模块

6 模块中的热敏电阻 功率模块中热的问题与分离器件中发现的那些通常的问题可能是不同的。这是由于在功率模块中各自的芯片间的热流通道是相互影响的。图7（见上期）简单的描述了包含多个功率消耗IGBT和二极管的功率模块的热问题。所有的芯片都安装在一个基板上，这样保证了高压元件和模块壳的电气隔离。不幸的是在大多数情况下基板到散热器的热流通路是高热阻的。如图所示，功率芯片将热从某个角度散出去，这依赖于很多因素，包括基板材料和散热器表面质量。     

基于XE1203无线射频芯片的透明数传模块研制

介绍了XE1203无线射频芯片的工作原理、硬件电路设计,以及软件编程;详细描述了一个基于XE1203无线射频芯片的透明无线数传模块的设计方案,同时给出了一个基于该透明无线数传模块的应用实例,说明了基于XE1203的无线模块的设计是切实可行的。     

一种基于温度平衡控制系统的全向流量传感器

本文设计了一种新型热膜式流量传感器,该传感器工作于温度平衡模式,通过控制芯片表面的温度平衡能够对360°全向流量进行检测。该芯片包含了四个恒温差（CTD）模块,每一个模块包含有一个加热器和一个敏度敏感器。4个CTD模块用于对芯片进行加热,并通过控制各区域加热功率的大小以保持芯片各区域之间温度平衡,利用四个加热器功率之间的差分运算就能够对全向流量进行监测。经测试,该基于该温度平衡控制系统的全向流量监测系统流向测试误差小于2°。     

一种用于功率模块热分布特性研究的精确模型

应用有限元法,对一个IGBT功率模块的三维热分布进行了仿真研究,提出了通过ANSYS仿真建立热模型的基本方法,进而探讨了功率模块上各芯片之间的热耦合关系,提出了考虑热耦合效应在内的功率模块热模型的统一结构,基于对瞬态热阻抗曲线的拟合,获得了热模型的相关参数,从而建立了热耦合模型.该模型可方便地应用于电路仿真软件如PSPICE中,仿真结果与有限元计算结果一致,并与实际测量值相符.     

一种用于功率模块热分布特性研究的精确模型

应用有限元法 ,对一个 IGBT功率模块的三维热分布进行了仿真研究 ,提出了通过 ANSYS仿真建立热模型的基本方法 ,进而探讨了功率模块上各芯片之间的热耦合关系 ,提出了考虑热耦合效应在内的功率模块热模型的统一结构 ,基于对瞬态热阻抗曲线的拟合 ,获得了热模型的相关参数 ,从而建立了热耦合模型 .该模型可方便地应用于电路仿真软件如 PSPICE中 ,仿真结果与有限元计算结果一致 ,并与实际测量值相符 .     

PCIe至PCI-X桥实现低延时、高吞吐和低功耗

集成天线解决方案供应商Antenova全面推出了其第二代全球定位系统GPS RADIONOVA射频天线模块.该模块将一块高性能、低功率的接收器芯片与Antenova的高效单端内均衡天线相融合,是采用单体封装的全球首款GPS解决方案.     

IGBT模块功率循环疲劳寿命预测

随着IGBT功率模块的广泛应用,其功率循环可靠性问题得到关注和重视.介绍了模块的功率循环失效机理,指出铝键合线剥离是模块功率循环失效的原因;基于有限元法计算了模块在功率循环过程中的温度分布与变化,并在此基础上计算了模块的应力应变:根据应力应变数值的计算结果,分别采用应变能法和应变法等两种疲劳破坏准则,预测了键合线疲劳寿命.研究表明,铝键合线根部为模块的疲劳危险区:随着芯片热损耗的增加,芯片结温变化幅度的增加,功率模块疲劳寿命急剧地减小.     

基于ANSYS的射频功率放大器热特性研究

论文首先仿真设计了一款射频功率放大器,接着构建了该射频功率放大器热特性分析模型,并采用有限元方法分析了该射频功率放大器热特性,然后研究了增加过孔以及不同覆铜层厚度、环境温度、耗散功率四种情况对射频功率放大器的温度、热应力和热形变的影响,最后基于上述分析结论加工制作并测试了该款射频功率放大器.在3.3GHz~3.6GHz范围内其输出功率不低于39.2dBm,增益不低于12dB,功率附加效率为62.6%~69%;在环境温度为21℃下,运用红外温度扫描仪进行测试,该款射频功率放大器最高温度达到90.0℃,测试结果与仿真分析结果相近.论文的研究为未来射频功率放大器的设计及制作提供了重要指导.     

Optimization and validation of thermal management for a RF front-end SiP based on rigid-flex substrate

This paper mainly presents a new 3D stacking RF System-in-Package (SiP) structure based on rigid-flex substrate for a micro base station, with 33 active chips integrated in a small package of 5cm × 5.5cm × 0.8cm. Total power consumption adds up to 20.1 Watt. To address thermal management and testability difficulties of this RF SiP, a thermal test package is designed with the same package structure and assembly flow, only replacing active chips with thermal test dies (TTDs). Optimization and validation of thermal management for the thermal test package is conducted. Effects of the structure, chip power distribution, and ambient temperature aspects on the thermal performance are studied. Thermal vias designed in the organic substrate provide a direct heat dissipation path from TTDs to the top heatsink, which minimizes junction temperature gap of the top substrate from 31.2 °C to 5.3 °C, and enables junction temperatures of all the chips on the face to face structure to be well below 82 °C. Chip power distribution optimization indicates placing high power RF parts on the top rigid substrate is a reasonable choice. The ambient temperature optimizes with forced air convection and cold-plate cooling method, both of which are effective methods to improve thermal performances especially for this micro base station application where environment temperature may reach more than 75 °C. The thermal management validation is performed with a thermal test vehicle. Junction temperatures are compared between finite-volume-method (FVM) simulation and thermal measurement under the natural convection condition. The accordance of simulation and measurement validates this thermal test method. Junction temperatures of typical RF chips are all below 80 °C, which shows the effectiveness of thermal management of this RF SiP.     

叠层芯片封装元件热应力分析及焊点寿命预测

研究了温度循环载荷下叠层芯片封装元件(SCSP)的热应力分布情况,建立了SCSP的有限元模型。采用修正后的Coffin-Masson公式,计算了SCSP焊点的热疲劳寿命。结果表明:多层芯片间存在热应力差异。其中顶部与底部芯片的热应力高于中间的隔离芯片。并且由于环氧模塑封材料、芯片之间的热膨胀系数失配,芯片热应力集中区域有发生脱层开裂的可能性。SCSP的焊点热疲劳寿命模拟值为1 052个循环周,低于单芯片封装元件的焊点热疲劳寿命(2 656个循环周)。     

Thermal solutions for discrete and wafer-level RF MEMS switch packages

In discrete radio frequency (RF) microelectromechanical systems (MEMS) packages, MEMS devices were fabricated on silicon or gallium arsenide (GaAs) chips. The chips were then attached to substrates with die attach materials. In wafer-level MEMS packages, the switches were manufactured directly on substrates. For both types of packages, when the switches close, a contact resistance of approximately 1 /spl Omega/ exists at the contact area. As a result, during switch operations, a considerable amount of heat is generated in the minuscule contact area. The power density at the contact area could be up to 1000 times higher than that of typical power amplifiers. The high power density may overheat the contact area, therefore affect switch performance and jeopardize long-term switch reliabilities. In this paper, thermal analysis has been performed to study the heat dissipation at the switch contact area. The goal is to control the "hot spots" and lower the maximum junction temperature at the contact area. A variety of chip materials, including Silicon, GaAs have been evaluated for the discrete packages. For each chip material, the effect of die attach materials has been considered. For the wafer-level packages, various substrate materials, such as ceramic, glass, and low-temperature cofired ceramic (LTCC) have been studied. Thermal experiments have been conducted to measure the temperature at the contact area and its vicinity as a function of dc and RF powers. Several solutions in material selection and package configurations have been explored to enable the use of MEMS with chips or substrates with relatively poor thermal conductivity. For discrete MEMS packages, placing the die inside a copper cavity on the substrate provides significant heat dissipation. For wafer-level packages, thin diamond coatings on the substrate could reduce the hot-spot temperature considerably.     

GaN基功率型LED芯片散热性能测试与分析

与正装LED相比,倒装焊芯片技术在功率型LED的散热方面具有潜在的优势.对各种正装和倒装焊功率型LED芯片的表面温度分布进行了直接测试,对其散热性能进行了分析.研究表明,焊接层的材料、焊接接触面的面积和焊接层的质量是制约倒装焊LED芯片散热能力的主要因素;而对于正装LED芯片,由于工艺简单,减少了中间热沉,通过结构的优化,工艺的改进,完全可以达到与倒装焊LED芯片相同的散热能力.     

微热板阵列的热干扰

针对微热板阵列建立了热路模型,并对热干扰进行分析.结果表明,由于微热板悬窄结构的热阻比硅芯片的热阻高3个数量级.因此微热板阵列芯片的热干扰温度取决于封装对环境的热阻,而芯片上器件的间距对热干扰温度的影响可以忽略.研制了3种布局、T05和DIPl6两种封装形式的微热板阵列,并对阵列中的热干扰问题进行了实验测试.测试数据验证了热路模型的结论.因此,减小微热板阵列或集成芯片的热干扰的关键在于,尽可能增大微热板悬空结构的热阻以及选用热阻小的封装形式.     

Evaluation of Thermal Resistance Matrix Method for an Embedded Power Electronic Module

Thermal characterization provides data on the thermal performance of electronic components under given cooling conditions. The most common thermal characterization parameter used to characterize the behavior of electronic components is the thermal resistance. In this work, experiments are conducted to obtain thermal characterization data for different chips in a multichip package. Using this data, it is shown that the assumption of a linear temperature rise with input power is valid within the expected range of operation of the electronic module. Secondly, the applicability of a resistance matrix superposition methodology to the packaging structure of an integrated power electronic module is evaluated. The temperatures and the associated uncertainties involved in using the resistance matrix superposition method are compared to those obtained directly by powering all chips. It is shown that for any arbitrary power losses from the chips, the resistance matrix superposition method can predict the temperatures of a multichip package with reasonable accuracy for temperature rise up to 50degC.     

相变温控在电子设备上的应用研究进展

随着电子设备中电子元器件功率不断变大,而物理尺寸却不断变小,热流密度不断增加,导致电子器件工作时温度过高,势必会影响电子元器件的性能,这就要求对其进行有效的温度控制.相变温控因其装置结构紧凑、性能可靠、经济节能等优点近年来被广泛地应用在各类电子设备的温控上.本文针对电子设备的散热温控问题,综述了国内外相变温控在电子设备上的应用研究进展,并提出了这一领域未来的研究方向.     

Solar based large scale power plants: what is the best option?

There are very few published data comparing performance and cost of thermal and photovoltaic (PV) based solar power generations. With recent intense technology and business developments there is a need to establish a comparison between these two solar energy options. We have developed a simple model to compare electricity cost using these two options without any additional fuel source of hybridization. Capital along with operation and maintenance (O&M) costs and other parameters from existing large scale solar farms are used to reflect actual project costs. To compete with traditional sources of power generation, solar technologies need to provide dispatchable electric power to respond to demand during peak hours. Different solutions for energy storage are available. In spite of their high capital cost, adding energy storage is considered a better long term solution than hybrid solar systems for large scale power plants. For this reason, a comparison between the two solar options is also provided that include energy storage. Although electricity storage is more expensive than thermal storage, PV power remains a competitive option. Expenses related to O&M in solar thermal plant are about ten times higher than PV, an important factor resulting in higher energy cost. Based on data from proven commercial technologies, this study showed that PV holds a slight advantage even when energy storage is included. Copyright © 2010 Crown in the right of Canada. Published by John Wiley & Sons, Ltd.