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1.
Density measurements of a low-silica CaO-SiO2-Al2O3 system were carried out using the Archimedes principle. A Pt 30 pct Rh bob and wire arrangement was used for this purpose.
The results obtained were in good agreement with those obtained from the model developed in the current group as well as with
other results reported earlier. The density for the CaO-SiO2 and the CaO-Al2O3 binary slag systems also was estimated from the ternary values. The extrapolation of density values for high-silica systems
also showed good agreement with previous works. An estimation for the density value of CaO was made from the current experimental
data. The density decrease at high temperatures was interpreted based on the silicate structure. As the mole percent of SiO2 was below the 33 pct required for the orthosilicate composition, discrete
\textSiO44 - {\text{SiO}}_{4}^{4 - } tetrahedral units in the silicate melt would exist along with O2– ions. The change in melt expansivity may be attributed to the ionic expansions in the order of
\textAl 3+ - \textO 2- < \textCa 2+ - \textO 2- < \textCa 2+ - \textO - {\text{Al}}^{ 3+ } - {\text{O}}^{ 2- } < {\text{Ca}}^{ 2+ } - {\text{O}}^{ 2- } < {\text{Ca}}^{ 2+ } - {\text{O}}^{ - } 相似文献
2.
The Au diffusion in the Ti3Al compound was investigated at six compositions from 25 to 35 at. pct Al by using the diffusion couples (Ti-X at. pct Al/Ti-X at. pct Al-2 at. pct Au; X = 25, 27, 29, 31, 32, and 35) at 1273 to 1423 K. The diffusion coefficients of Au in Ti3Al
( D\textAu\textTi3 \textAl ) \left( {D_{\text{Au}}^{{{\text{Ti}}_{3} {\text{Al}}}} } \right) are relatively close to those of Ti. The
D\textAu\textTi3 \textAl \texts {D}_{\text{Au}}^{{{\text{Ti}}_{3} {\text{Al}}}} {\text{s}} slightly increase with Al concentration within the same order of magnitude. The activation energies of Au diffusion,
Q\textAu\textTi3 \textAl \texts, Q_{\text{Au}}^{{{\text{Ti}}_{3} {\text{Al}}}} {\text{s}}, evaluated from the Arrhenius plots were relatively close to those of Ti diffusion,
Q\textTi\textTi3 \textAl \texts, Q_{\text{Ti}}^{{{\text{Ti}}_{3} {\text{Al}}}} {\text{s}}, rather than those of Al diffusion,
Q\textAl\textTi3 \textAl \texts; {Q}_{\text{Al}}^{{{\text{Ti}}_{3} {\text{Al}}}} {\text{s}}; therefore, it was suggested that Au atoms diffuse by the sublattice diffusion mechanism in which Au atoms substitute for
Ti sites preferentially in Ti3Al and diffuse by vacancy mechanism on Ti sublattice. The influence of the D019 ordered structure (hcp base) of Ti3Al on diffusion of Au and other elements is discussed by comparing the diffusivities in Ti3Al and α-Ti. 相似文献
3.
Sound velocity values for 32 liquid metals at their melting point temperatures have been predicted using two models that we
presented; most of these metals are transition and rare earth metals. The sound velocities for most of these liquid metals
have yet to be measured experimentally. Dimensionless common parameters, denoted by
x\textT1/2 \xi_{\text{T}}^{1/2} and
x\textE1/2 , \xi_{\text{E}}^{1/2} , were determined on the basis of the predicted sound velocities. These common parameters, which characterize the liquid state
(i.e., an atom’s hardness or softness and its anharmonic motions), allow for better predictions of several thermophysical properties
(e.g., surface tension, viscosity, self-diffusivity, volume expansivity) of liquid metallic elements. The values of both the common
parameters
x\textT1/2 \xi_{\text{T}}^{1/2} and
x\textE1/2 \xi_{\text{E}}^{1/2} vary periodically with atomic number. Using our viscosity model in terms of the parameter
x\textT1/2 , \xi_{\text{T}}^{1/2} , values of melting point viscosity were calculated for liquid molybdenum and platinum. The agreement obtained between calculated
and experimental values is good when using predicted values of
x\textT1/2 \xi_{\text{T}}^{1/2} to calculate their viscosities. 相似文献
4.
The solubility of indium in a molten CaO-SiO2-Al2O3 system was measured at 1773 K (1500 °C) to establish the dissolution mechanism of indium under a highly reducing atmosphere.
The solubility of indium increases with increasing oxygen potential, whereas it decreases with increased activity of basic
oxide. Therefore, a dissolution mechanism of indium can be constructed according to the following equation:
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