一种新的跳频信号参数盲估计算法

本文针对通信对抗中的跳频信号参数盲估计问题,提出了一种基于原子分解算法的跳频信号参数盲估计方法.根据跳频信号内部结构的特点,以加窗正弦函数为基函数构造了一种与跳频信号匹配的3-参数时频原子字典,将跳频信号分解为有限个3-参数时频原子的组合,最终根据这些时频原子的参数值来估计跳频信号的参数.仿真实验表明,该方法能够在未知任何先验知识的情况下,对跳频信号的跳周期、跳变时刻和跳频频率进行有效估计.     

跳频信号互模糊函数相参积累时差和速度差估计方法

在运动多站定位场景下，宽带跳频通信信号的载频跳变会产生变化的多普勒频移，因此无法直接利用跳频信号的多个不同脉冲估计多普勒频率差，若仅估计单个跳频脉冲的时频差，则精度低而无法满足定位要求。针对此问题，提出了一种基于互模糊函数相参积累的宽带跳频信号时差和多普勒速度差估计方法。首先将宽带跳频信号的多普勒效应差建模为多普勒速度差，从而无需对多普勒频差进行估计，避免载频跳变对多普勒效应差估计造成影响，并建立了时变时差的时差和速度差信号模型。然后对各单跳信号的互模糊函数进行相位补偿以实现相位对齐，通过对相参积累后的互模糊函数进行时差和速度差的二维峰值搜索，可以得到多跳频脉冲信号初始时刻时差和速度差的相参估计结果。最后以Link16数据链信号为例对算法进行了仿真实验，验证了算法的正确性与精度优势。     

非正交跳频网台信号的截获和识别技术

为了探讨对非正交跳频网台的截获，分选和识别方法，我们研制了一套跳频通信实验侦察装置。本文简介该装置的组成和工作原理后，着重介绍对非正交跳频网台信号的截获，分选和识别。试验表明：该装置不仅能截获低恒跳速的跳频信号，也能截获，分选和识别。试验表明：该装置不仅能截获低恒跳速的跳频信号，也能截获，识别跳速至２５０Ｈ／ｓ且跳速随机变化的跳频信号。     

基于快速折叠算法和时频分析的LPI跳频信号截获

该文提出了一种新的低截获概率(LPI)跳频信号的截获方法,该方法基于快速折叠算法和时频分析。在低信噪比环境下,该方法能有效检测跳频信号;通过恰当地选择折叠周期范围和分辨率,能实现对跳频参数如跳频周期、跳变时刻和跳频频率的估计。仿真结果和性能分析表明,该方法能有效截获信噪比为0dB的跳频信号,与自适应门限检测方法相比具有更好的性能。     

一种基于STFT的跳频参数估计新方法

针对STFT在进行跳频信号参数估计时,时间分辨率和频率分辨率存在固有矛盾这一问题,通过分析窗函数对跳频信号STFT变换后时频谱图的影响,提出了一种基于STFT的跳频参数估计方法。该方法直接利用窗函数参数提取跳频参数,避免了时频谱图对参数估计精度的影响。通过不断改变窗函数起始时刻及窗函数宽度,寻找时频聚集性最好的时频谱图,确定目标窗函数参数。仿真结果表明,该方法实现了跳频参数的有效估计。     

基于稀疏时频分布的跳频信号参数估计

基于常规时频分析方法的跳频信号参数估计中,采用核函数抑制时频分布交叉项会导致时频聚集性的下降,不利于信号参数提取。针对此问题,该文提出一种基于稀疏时频分布(STFD)的跳频信号处理方法。该方法首先根据Cohen类分布的原理和跳频信号模糊函数的特点,以模糊域矩形窗为核函数,构建了一种Cohen类的矩形核分布(RKD)。RKD可有效抑制交叉项,但其时频分辨率较低。为提高RKD的时频性能,在压缩感知框架下,利用跳频信号时频分布的稀疏特性,对RKD附加稀疏性约束,建立稀疏时频分布(STFD)的优化求解模型。STFD不仅能有效抑制交叉项,而且具有良好的时频聚集性。仿真分析表明,与传统时频分析方法相比,该文提出的基于STFD的跳频信号参数估计方法性能更优。     

基于短时傅立叶变换的跳频序列瞬时频率估计

采用了G函数的方法来模拟跳频序列，然后利用短时傅立叶变换对它进行分析与瞬时频率的估计。该方法能够有效地描绘出跳频信号的频率随时间跳变的规律（跳频图案），具有很高的时间一频率分辨率。计算机仿真验证了应用短时傅立叶变换分析跳频序列的有效性和实用性。     

一种基于混沌映射的G函数算法

在跳频通信中,G函数的性能直接影响着差分跳频信号的性能。文章在研究传统G函数构造方法的基础上,给出了一种新的基于混沌映射的G函数构造方法,该方法具有结构简单、便于控制的优点。通过仿真证明了所构造的G函数具有良好的随机性和均匀性,它对提高差分跳频信号的性能有着重要意义。     

基于原子分解的跳频信号盲检测和参数盲估计算法

本文针对跳频信号的检测和参数估计问题,提出了一种基于原子分解算法的跳频信号盲检测和参数盲估计算法。以Gabor函数为基函数对输入的多分量信号样本进行原子分解,在原子分解的每一次迭代后计算信号残差的信息论准则测度,通过与前一次迭代后的信息论准则测度作比较,找到信息论准则测度的第一个局部极小值,这个局部极小值对应的迭代次数就是信号样本中包含的信号分量的数量,进而根据分解得到的时频原子的参数值来聚类,从输入信号中分选出跳频信号的hop,并估计跳频信号的参数。仿真实验表明,该方法能够在未知任何先验知识的情况下,对高斯白噪声环境中跳频信号进行有效检测,并能够对跳周期、跳变时刻和跳频频率进行有效估计。      

基于时频脊线的跳频参数盲估计

 为了估计未知跳频信号的参数,提出一种基于时频脊线的跳频参数盲估计方法,根据跳频信号频率的瞬变特性,通过对跳频信号时频脊线的小波变换,可以准确估计跳周期,进而估计其它跳频参数.理论分析和仿真结果表明,该方法可以在低信噪比下以较低的运算复杂度实现高精度的参数估计,整体性能优于现有的跳频参数盲估计方法.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.