共查询到20条相似文献,搜索用时 31 毫秒
1.
《Electron Devices, IEEE Transactions on》2009,56(8):1659-1666
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Lin C.-L. Chen Y.-T. Huang F.-S. Yeh W.-K. Lin C.-T. 《Electron Device Letters, IEEE》2010,31(2):165-167
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The design, operation, and characterization of CMOS imagers implemented using: 1) "regular" CMOS wafers with a 0.5-mum CMOS analog process; 2) "regular" CMOS wafers with a 0.35-mum CMOS analog process; and 3) silicon-on-insulator (SOI) wafers in conjunction with a 0.35-mum CMOS analog process, are discussed in this paper. The performances of the studied imagers are compared in terms of quantum efficiency, dark current, and optical bandwidth. It is found that there is strong dependence of quantum efficiency of the photodiodes on the architecture of the image sensor. The results of this paper are useful for designing and modeling CMOS/SOI image sensors 相似文献
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《Lightwave Technology, Journal of》2009,27(10):1387-1391
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A nanostructured hollow optical waveguide based on high-index contrast grating (HCG) embedded SOI is proposed. An ultra-low propagation loss of 1.22 dB/m even at narrow, 1-\(\upmu \)m thick, air-core is reported. A high-performance photodetection is realized by the introduction of hollow core in form of intrinsic region in the photodetection (PIN) layer within HCG-assisted narrow-core waveguide. A sufficiently high responsivity of 0.8 A/W and quantum efficiency of 64% are obtained at 1550-nm which is possible because of the presence of surface modes within HCG which get coupled in the photodetection layer leading to a strong optical confinement in that layer. High reflectivity, small penetration length and coupling of lateral surface modes in HCG make it possible to offer improved waveguiding and hence photodetection. 相似文献
6.
High-Voltage SOI SJ-LDMOS With a Nondepletion Compensation Layer 总被引:2,自引:0,他引:2
《Electron Device Letters, IEEE》2009,30(1):68-71
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《Electron Devices, IEEE Transactions on》2009,56(3):474-482
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《Electron Devices, IEEE Transactions on》2009,56(4):656-664
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《Photonics Technology Letters, IEEE》2009,21(24):1789-1791
10.
Ce Zhou Zhao Ai Hua Chen E.K. Liu G.Z. Li 《Photonics Technology Letters, IEEE》1997,9(8):1113-1115
Based on the large cross-section single-mode rib waveguide condition, total internal reflection (TIR) and the plasma dispersion effect, a silicon-on-insulator (SOI) asymmetric optical waveguide switch with transverse injection structure has been proposed and fabricated, in which the SOI technique utilizes silicon and silicon dioxide thermal bonding and back-polishing. The device performance is measured at a wavelength of 1.3 /spl mu/m. It shows that the extinction ratio and insertion loss are less than -18.1 and 6.3 dB, respectively, at an injection current of 60 mA. Response time is 110 ns. 相似文献
11.
Yue-Gie Liaw Wen-Shiang Liao Mu-Chun Wang Chii-Wen Chen Deshi Li Haoshuang Gu Xuecheng Zou 《Semiconductors》2017,51(12):1650-1655
The length of Source/Drain (S/D) extension (LSDE) of nano-node p-channel FinFETs (pFinFETs) on SOI wafer influencing the device performance is exposed, especially in drive current and gate/S/D leakage. In observation, the longer LSDEpFinFET provides a larger series resistance and degrades the drive current (IDS), but the isolation capability between the S/D contacts and the gate electrode is increased. The shorter LSDE plus the shorter channel length demonstrates a higher trans-conductance (G m ) contributing to a higher drive current. Moreover, the subthreshold swing (S.S.) at longer channel length and longer LSDE represents a higher value indicating the higher amount of the interface states which possibly deteriorate the channel mobility causing the lower drive current. 相似文献
12.
M. Tang A.Q. Liu A. Agarwal Q.X. Zhang P. Win 《Analog Integrated Circuits and Signal Processing》2004,40(2):165-173
This paper presents a novel lateral series microwave switch fabricated on a silicon-on-insulator (SOI) substrate with a finite ground coplanar waveguide (FGCPW) configuration which is laterally actuated by the electrostatic force. The switch is built with a cantilever beam in the direction of the signal line and a fixed electrode is located opposite the cantilever beam. The mechanical structures are fabricated using SOI deep reactive ion etching (DRIE) and shadow mask technology. The fabricated lateral RF MEMS switch has an isolation of 16 dB at 20 GHz. The insertion loss of the switch is 1 dB and return loss is 15 dB at 20 GHz. The threshold voltage is 19.2 V and switching time is 30 s. 相似文献
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14.
Individually Addressable AlInGaN Micro-LED Arrays With CMOS Control and Subnanosecond Output Pulses 总被引:1,自引:0,他引:1
《Photonics Technology Letters, IEEE》2009,21(12):811-813
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This paper presents a 5‐bit digital step attenuator (DSA) using a commercial 0.18‐μm silicon‐on‐insulator (SOI) process for the wideband phased array antenna. Both low insertion loss and low root mean square (RMS) phase error and amplitude error are achieved employing two attenuation topologies of the switched path attenuator and the switched T‐type attenuator. The attenuation coverage of 31 dB with a least significant bit of 1 dB is achieved at DC to 20 GHz. The RMS phase error and amplitude error are less than 2.5° and less than 0.5 dB, respectively. The measured insertion loss of the reference state is less than 5.5 dB at 10 GHz. The input return loss and output return loss are each less than 12 dB at DC to 20 GHz. The current consumption is nearly zero with a voltage supply of 1.8 V. The chip size is , including pads. To the best of the authors' knowledge, this is the first demonstration of a low phase error DC‐to‐20‐GHz SOI DSA. 相似文献
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SOI光波导是硅基光波导器件的基础,也是实现其它集成光学器件的基础。文章论述了SOI材料、SOI光波导以及SOI光波导开关的一些特性和研究进展。 相似文献
17.
《Solid-State Circuits, IEEE Journal of》2009,44(11):2901-2910
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《Electron Device Letters, IEEE》2009,30(1):21-23
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It is shown that MBE-grown Si/CaF2/Si heterostructures are promising for SOI technology. On the basis of these heterostructures, test MIS/SOI structures were created. The mean electron mobility in the top silicon layer was found to be 450–600 cm2/(V s). A test CMOS IC with a CoSi2gate and a CaF2gate dielectric was produced. The room-temperature ultimate speed of this structure was estimated (and measured) at a level of 1.5–2 GHz for a supply voltage of 3.0 V. 相似文献
20.
Nakajima H. Yanagi S. Komiya K. Omura Y. 《Electron Devices, IEEE Transactions on》2002,49(10):1775-1782
This paper estimates the off-leakage current (I/sub off/) and drive current (I/sub on/) of various SOI MOSFETs by simulations based on the hydrodynamic-transport model; the band-to-band tunneling (BBT) effect at the drain is taken into consideration. Here, the simulations are done for SOI structures with a thick channel where the distinct quantization of energy is irrelevant to the present results. It is shown that merging hydrodynamic transport with the BBT effect is indispensable if realistic I/sub off/ estimates are to be achieved. It is shown that the symmetric double-gate SOI MOSFET does not always offer better drivability than other SOI MOSFETs, and that a single-gate SOI MOSFET with carefully selected parameters exhibits superior performance to double-gate SOI MOSFETs. It is also demonstrated that the quantum tunnel current is not significant, even in 20-nm channel SOI MOSFETs. The results suggest that we can still employ the conventional semi-classical method to estimate the off-leakage current of sub-100-nm channel low-power SOI MOSFETs. 相似文献