基于MSP430的电机功率因数测量系统

介绍以MSP430超低功耗16位单片机为核心的交流电机功率因数测量系统,并对该系统的测量原理做了详细的说明.在逆变器供电条件下,互感器检测电机的线电压、相电流,经信号调理电路后,由MSP430测量单相电流及电压之间的相位差,通过计算求得功率因数.利用430F449内置的定时器的捕获功能计算功率因数,其电路简单、稳定可靠,且测量的精度高.     

基于单片机MSP430F449的宽带直流放大器设计

利用单片机MSP430F449设计宽带直流放大器。采用单片机MSP430F449作为宽带直流放大器的控制芯片,利用三级放大器级联的形式实现对输入小信号的放大。其中MSP430F449单片机来控制双路数模转换器TLV5638实现AD603的程控增益调节和整体后级放大模块引入的直流的软件补偿,并利用OPA847作为固定增益放大器。通过实验数据证明整个系统输出稳定,性能良好。该系统具有可行性和实用性。     

音频信号采集系统硬件电路设计

本文研究主要内容是一个基于MSP430F449单片机的音频信号采集系统的设计方法。即设计一个用MSP430F449单片机,12位的ADC,128×64的LCD,段式LCD等元件组成的电路,实现音频信号采集、转换示等功能的数据采集系统。     

基于MSP430F149单片机的直流电子负载设计

鉴于电子负载在电源设备测试中的广泛应用,研制了一台以MSP430F149单片机为核心处理器的直流电子负载。单片机MSP430F149内设ADC12模块对负载电压、电流信号实时采样,并外设10位D/A转换芯片TLC5615输出模拟电压信号驱动MOS管,内部控制采用BP神经网络算法,实现定电流、定电压、定电阻和定功率4种工作模式。经安装测试,系统调整时间＜3 s,电压电流测量误差均＜±0.5%,且跟踪速度快、测量精度高,并具有一定的经济实用价值。     

基于MSP430F449的数字频率计设计

本文主要介绍了MSP430F449单片机的性能特点,结合前置双模分频器SAB6456A和高速数字分频器74HC390的典型应用,给出了以MSP430F449为主控芯片的射频数字频率计的硬件设计和软件的主程序流程,设计出了一种全自动、数显的射频频率计。     

基于MSP430 Timer_B的D/A转换

分析了利用MSP430的Timer_B在比较模式下输出脉宽调制(PWM)波来实现D/A转换的工作原理。介绍了利用MSP430F449的TimerB的PWM输出来产生正弦波和直流电平的方法 ,同时给出了对应的硬件电路和C语言源程序     

单片机控制光伏并网逆变器的设计及其应用

光伏并网装置以DC／AC逆变器为核心。由外部提供的直流稳压电源产生直流输入电压Us,微控制器MSP430F169产生占空比可调的SPWM波通过控制四个开关管的导通和截止构成DC／AC逆变电路使直流输入电压逆变成交流电压,再通过滤波电路后产生正弦交流电,使之经过一个升压变压器产生需要的输出电压。通过由MSP430F169单片组成的控制电路实现的最大功率点跟踪,即MPPT功能及反馈输出电压与正弦参考电压Uref的功率和相位跟踪功能。     

MSP430单片机便携式疲劳信号检测系统研究

根据人体脉搏波信号的特征,设计性能优良的脉搏波信号采集系统,选用超低功耗16位单片机MSP430F449对采集的脉搏波信号进行记录、处理、传输。硬件部分为满足脉搏信号的采集要求,着重讨论了模拟放大电路的组成结构、工作原理、分析方法以及性能参数的计算。本文所采用的处理器型号MSP430FF449是MSP430系列产品中较高档的型号。它采用16位RISC结构,具有丰富的片内外设和大容量的片内工作寄存器和存储器,性价比较高。     

基于MS5534B的气压高度计系统的设计

采用Intersema公司基于MEMS的数字压力传感器MS5534B,利用海拔高度与气压和温度的关系,设计并制作了一个微型气压高度计。利用MSP430F449的I/O口模拟同步串行外设接口(SPI),实现了MSP430F449从数字压力测量模块MS5534B读取温度和气压数据的功能,经过相关的计算处理得到实际高度值,在液晶显示屏上实时显示温度和高度,并通过RS232通信接口把数据发回至上位机。设计的气压高度计样机具有质量小、功耗低、精度高等优点,经过实验测定,在标准大气压环境中其相对高度测量的平均标准偏差为0.2m,线性度为0.9999。     

一种基于MSP430F2002的数字式单相正弦波变频电源

设计了实现了一种基于MSP430F2002的数字式单相正弦波变频电源,文中对其软硬件设计、器件参数计算以及设计、测试过程进行了详细的描述.该变频电源的供电电源为36V蓄电池,由MSP430F2002完成了SPWM信号产生、电压幅度和频率调制的功能,经单相逆变电路和LC滤波电路得到电压幅度在0V到30V、频率在1Hz到70Hz之间可调、最大负载电流为1A的正弦交流输出信号,可满足过套管电阻率测井仪器的现场需求,测试结果表明使用MSP430F单片机是实现低功耗、低成本、高可靠性仪器设计的最佳选择.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.