一种适合VLSI库的Rail-to-Rail运算放大器

介绍了一种适于 VLSI库单元的轨到轨 (Rail-to-Rail)运算放大器。低电压、低功耗、输入输出动态幅度达到 Rail-to-Rail的运放模块是研究的核心。文章分析了该运放模块的输入、输出级 ,并分析了 cascodedMiller频率补偿技术。芯片采用新加坡特许半导体制造公司 0 .6μm N阱 CMOS工艺 ,芯片面积 0 .0 2 4mm2 。测试结果表明 :该运放模块在 3 V工作电压下直流增益 90 d B,共模输入范围 -0 .4～ 4V,输出动态范围 0～ 2 .9V,单位增益带宽 7MHz,相位裕量 70°,静态功耗仅有 0 .3 m W,特别适合作为 VLSI的库单元     

0．6VCMOS轨至轨运算放大器

为适应低压低功耗设计的应用,设计了一种超低电源电压的轨至轨CMOS运算放大器。采用N沟道差分对和共模电平偏移的P沟道差分对来实现轨至轨信号输入．。当输入信号的共模电平处于中间时,P沟道差分对的输入共模电平会由共模电平偏移电路降低,以使得P沟道差分对工作。采用对称运算放大器结构,并结合电平偏移电路来构成互补输入差分对。采用0．13μm的CMOS工艺制程,在0．6V电源电压下,HSpice模拟结果表明,带10pF电容负载时,运算放大器能实现轨至轨输入,其性能为：功耗390μw,直流增益60dB,单位增益带宽22MHz,相位裕度80°。     

Low-voltage operational amplifier with rail-to-rail input and output ranges

An operational amplifier is described which can perform precision signal operations in nearly the full supply voltage range, event when this range is as low as 1.5 V totally. The untrimmed input offset voltage is typically 0.3 mV in an input common-mode (CM) voltage range which extends beyond both supply voltages for about 200 mV. The output voltage can reach each supply rail within 150 mV. A nested-loop frequency-compensation scheme yields a stable unity-gain bandwidth of 0.6 MHz while the low-frequency open-loop voltage gain is 110 dB. The op amp is integrated in a standard low-cost bipolar process and the chip measures 1.5/spl times/1.7 mm/SUP 2/.     

A rail-to-rail CMOS op amp

A CMOS op amp (operational amplifier) is reported which has a rail-to-rail voltage range at its input as well as its output. An area-efficient output stage has been used. While the entire op amp occupies only 600 mil², when used as a unity-gain buffer and with ±5-V supplies, the op amp can drive a 9-V_pp/1-kHz sine wave across a 300-Ω load with -64 dB of harmonic distortion     

A fast-settling CMOS op amp for SC circuits with 90-dB DC gain

A technique that combines the high-frequency behavior of a single-stage op amp with the high DC gain of a multistage design is presented. This technique is based on the concept that a very high DC gain can be achieved in combination with any unity-gain frequency achievable by a (folded-) cascode design. Bode-plot measurements for an op amp realized in a 1.6-μm process show a DC gain of 90 dB and a unity-gain frequency of 116 MHz (16-pF load). Settling measurements with a feedback factor of 1/3 show a fast single-pole settling behavior corresponding to a closed-loop bandwidth of 18 MHz (35-pF load) and a settling accuracy better than 0.03%. This technique does not cause any loss in output voltage swing. At a supply voltage of 5.0 V an output swing of about 4.2 V is achieved without loss in DC gain. The above advantages are achieved with a 30% increase in chip area and a 15% increase in power consumption     

Multistage amplifier topologies with nested Gm-Ccompensation

This paper presents a multistage amplifier for low-voltage applications (<2 V). The amplifier consists of simple (noncascode) low gain stages and is stabilized using a nested transconductance-capacitance compensation (NGCC) scheme. The resulting topology is similar to the well known nested Miller compensation (NMC) multistage amplifier, except that the proposed topology contains extra G _m feedforward stages which are used to enhance the amplifier performance. The NGCC simplifies the transfer function of the proposed multistage amplifier which, in turn, simplifies its stability conditions. A comparison between the NGCC and NMC shows that the NGCC has wider bandwidth and is easier to stabilize. A four-stage NGCC amplifier has been fabricated using a 2-μm CMOS process and is tested using a ±1.0 V power supply. A dc gain of 100 dB has been measured. A gain bandwidth product of 1 MHz with 58° of phase margin and power of 1.4 mW can be achieved. The op amp occupies an active area of 0.22 mm². Step response shows that the op amp is stable     

A high-frequency fully differential BiCMOS operational amplifier

A high-frequency fully differential BiCMOS operational amplifier design for use in switched-capacitor circuits is presented. The operational amplifier is integrated in a 3.0-GHz, 2-μm BiCMOS process with an active die area of 1.0 mm×1.2 mm. This BiCMOS op amp offers an infinite input resistance, a DC gain of 100 dB, a unity-gain frequency of 90 MHz with 45° phase margin, and a slew rate of 150 V/μs. The differential output range is 12 V. The circuit is operated from a ±5-V power supply and dissipates 125 mW. The op amp is unity-gain stable with 7 pF of capacitive loading at each output. The op amp is a two-stage, pole-split frequency compensated design that uses a PMOS input stage for infinite input resistance and an n-p-n bipolar second stage for high gain and high bandwidth. The frequency compensation network serves both the differential- and common-mode amplifiers so the differential- and common-mode amplifier dynamics are similar. A dynamic switched-capacitor common-mode feedback scheme is used to set the output common-mode level of the first and second stages     

1-V operational amplifier with rail-to-rail input and output ranges

A bipolar operational amplifier (OA) with rail-to-rail input and output ranges which can operate at supply voltages down to 1 V is presented. At this supply voltage, the input offset voltage is typically 1.0 mV in an input common-mode voltage range that extends beyond both supply rails for about 300 mV, with a common-mode rejection ratio (CMRR) between 38 and 100 dB, depending on conditions. The output voltage can reach both supply rails within 100 mV, the output current is limited to ±10 mA, the voltage gain is 100 dB, and the bandwidth is 450 kHz. The die is 2.5×5.5 mm². Qualities such as offset, input-bias current, and CMRR are improved when the supply voltage is increased and the dynamic level shift is autonomically turned off. The OA has been protected against unintentional reversal of the output signal when the inputs are substantially overdriven. The output stage of the circuit consists of two full complementary composite transistors, whose HF characteristics have been improved by internal Miller compensation and linearization of the transconductance     

A low-output-impedance fully differential op amp with large outputswing and continuous-time common-mode feedback

A fully differential (zero common-mode voltage) op amp has been developed which has low output impedance, but unlike source-follower output stages, it has a large output swing, namely, 8 V_p-p for 1-kΩ load and a 5-V supply. The output stage, which is a combination of common-source and source-follower stages, is driven by the two complimentary outputs of the differential-output input stage. A continuous-time common-mode feedback circuit has been used, which due to the op amp's low output impedance, causes negligible open-loop gain (95 dB) degradation. Floating compensation capacitors are used in order to reduce the capacitance value and, hence, the area (490 mil²)     

A compact low noise operational amplifier for a 1.2 μm digitalCMOS technology

A compact low noise operational amplifier using lateral p-n-p bipolar transistors in the input stage has been fabricated in a standard 1.2 μm digital n-well CMOS process. Like their n-p-n counterparts in p-well processes, these lateral p-n-p transistors exhibit low 1/f noise and good lateral β. The fabricated op amp has an area of only 0.211 mm² with E_n=3.2 nV/√(Hz), I_n=0.73 pA/√(Hz), E_n and I_n 1/f noise corner frequencies less than 100 Hz, a -3 dB bandwidth greater than 10 MHz with a closed loop gain of 20.8 dB, a minimum PSRR (DC) of 68 dB, a CMRR (DC) of 100 dB, a minimum output slew rate of 39 V/μs, and a quiescent current of 2.1 mA at supply voltages of ±2.5 V. The operational amplifier drives a 1 kΩ resistive load to 1 V peak-to-peak at 10 MHz and has been used as a versatile building block for mixed-signal IC designs     

A 2.7-V 1.8-GHz fourth-order tunable LC bandpass filter based on emulation of magnetically coupled resonators

A low-voltage fourth-order RF bandpass filter structure based on emulation of two magnetically coupled resonators is presented. A unique feature of the proposed architecture is using electric coupling to emulate the effect of the coupled inductors, thus providing bandwidth tuning with small passband ripple. Each resonator is built using on-chip spiral inductors and accumulation-mode pMOS capacitors to provide center frequency tuning. The filter has been implemented in HP 0.5-/spl mu/m CMOS process and occupies an area of 0.15 mm/sup 2/. It consumes 16 mA from a single 2.7-V supply at a center frequency of 1.84 GHz and a bandwidth of 80 MHz while providing a passband gain of 9 dB and more than 30 dB of image attenuation for an IF frequency of 100 MHz. The measured output 1-dB compression point and output noise power spectral densities are -16 dBm and -137 dBm/Hz, respectively. This results in a 1-dB compression dynamic range of 42 dB. The filter minimum power supply voltage for proper operation is 2 V. The chip experimental results are in good agreement with theoretical results.     

A 1-V BiCMOS rail-to-rail amplifier with n-channel depletion modeinput stage

A BiCMOS rail-to-rail operational amplifier capable of operating from supply voltages as low as 1 V is presented. The folded cascode input stage uses an nMOS depletion mode differential pair to provide rail-to-rail common mode voltage range while typically requiring only 40 fA of input bias current. The bipolar transistor differential-to-single-ended conversion network employs a low-voltage base current cancellation technique which provides high input stage voltage gain from a l-V supply yet allows a 3-V/μs slew rate capability. The bipolar transistor output stage uses a low-voltage translinear loop which maintains a low impedance signal path to the output common emitter power devices. This circuit topology enables the amplifier to achieve a 4-MHz bandwidth with 60° of phase margin. The output voltage can swing to within 50 mV of each supply rail. An “on-demand” base current boost technique will be presented which can provide up to 50 mA of output drive capability from a 5-V supply, yet consumes only a few microamps when the output is in the quiescent state. A low voltage level shift technique will be described which uses an n-channel depletion mode source follower to provide isolation between the input and output stages     

A low-voltage low-power instrumentation amplifier based on supply current sensing technique

In this paper a new low-voltage low-power instrumentation amplifier (IA) is presented. The proposed IA is based on supply current sensing technique where Op-Amps in traditional IA based on this technique are replaced with voltage buffers (VBs). This modification results in a very simplified circuit, robust performance against mismatches and high frequency performance. To reduce the required supply voltage, a low-voltage resistor-based current mirror is used to transfer the input current to the load. The input and output signals are of voltage kind and the proposed IA shows ideal infinite input impedance and a very low output one. PSPICE simulation results, using 0.18 μm TSMC CMOS technology and supply voltage of ±0.9 V, show a 71 dB CMRR and a 85 MHz constant −3 dB bandwidth for differential-mode gain (ranging from 0 dB to 18 dB). The output impedance of the proposed circuit is 1.7 Ω and its power consumption is 770 µW. The method introduced in this paper can also be applied to traditional circuits based on Op-Amp supply current sensing technique.     

Low-voltage/low-power transconductors with extremely large dynamicrange and low distortion

A new class of configurations for linear low-voltage/low-power transconductors is presented. With a single supply voltage of 1.0 V, a dynamic range of >100 dB within the audio bandwidth is feasible. The linearity exceeds 99% within an input voltage between -9 and +9 times the thermal voltage. Owing to class-AB operation the quiescent power consumption is extremely low. A special biasing technique, called `indirect biasing' ensures stable biasing and large PSSR     

低功耗恒定跨导轨对轨运算放大器设计技术研究

为了解决轨对轨运算放大器输入级跨导随共模输入电压变化的影响,采用实时共模电压监测技术,动态跟踪轨对轨运放输入级的跨导变化,通过对偏置电流的高精度定量补偿,从而实现了对输入级跨导的恒定性控制。基于0.18μm CMOS工艺进行了具体电路的设计实现,结果表明:在电源电压3.3 V、负载电阻100Ω、负载电容1 nF的条件下,运放增益为148 dB、相位裕度为61°、功耗为39.6μW,共模输入范围高达0~3.3 V,输入级跨导变化率仅为2.1%。     

A parallel structure for CMOS four-quadrant analog multipliers andits application to a 2-GHz RF downconversion mixer

A parallel structure for a CMOS four-quadrant analog multiplier is proposed and analyzed. By applying differential input signals to a set of combiners, the multiplication function can be implemented. Based on the proposed structure, a low-voltage high-performance CMOS four-quadrant analog multiplier is designed and fabricated by 0.8 μm N-well double-poly-double-metal CMOS technology. Experimental results have shown that, under a single 1.2 V supply voltage, the circuit has 0.89% linearity error and 1.1% total harmonic distortion under the maximum-scale input 500 mV_p-p at both multiplier inputs. The -3 dB bandwidth is 2.2 MHz and the DC current is 2.3 mA. By using the proposed multiplier as a mixer-core and connecting a newly designed output buffer, a CMOS RF downconversion mixer is designed and implemented by 0.5 μm single-poly-double-metal N-well CMOS technology. The experimental results have shown that, under 3 V supply voltage and 2 dBm LO power, the mixer has -1 dB conversion gain, 2.2 GHz input bandwidth, 180 MHz output bandwidth, and 22 dB noise figure. Under the LO frequency 1.9 GHz and the total DC current 21 mA, the third-order input intercept point is +7.5 dBm and the input 1 dB compression point is -9 dBm     

A 0.8-V 816-nW delta–sigma modulator for low-power biomedical applications

This letter discusses the implementation of a low-voltage, low-power delta–sigma modulator as a sensing stage for biomedical applications. A distributed feed-forward structure and bulk-driven operational transconductance amplifier are used in order to achieve efficient operation at a supply voltage of 0.8 V. Instead of conventional low-voltage amplifier architectures, our design uses folded-cascode amplifiers, although they are not used in most low-voltage circuits. A wide input swing is achieved by using the bulk-driven approach, and the drawback of the limited voltage swing of the cascoded output stage is overcome by the distributed feed-forward modulator. The designed modulator has a dynamic range of 49 dB at a 0.8-V supply voltage and consumes only 816 nW of power for the 250-Hz bandwidth. The core chip size of the modulator is 1000 μm × 500 μm by using the 0.18-μm standard CMOS process.     

Novel low-voltage folder for analogue-to-digital converter

A novel architecture of low-voltage folder is presented for folding analogue-to-digital (A/D) converter applications. With MOS transistors completely replacing the resistor load used in the conventional folder, this circuit has a good power-supply–rejection-ratio (PSRR) 21.2?dB for the output common voltage and can work well even under a very low power supply 1.0?V. A moderately high gain 14.5?dB and a wide input bandwidth 506?MHz are obtained. The circuit dissipates only 1.2?mW from 1.2?V power supply. The performance is verified by Hspice-Avanti-99.4 simulations on 0.18?µm digital CMOS technology.     

Some Design Aspects of a Two-Stage Rail-to-Rail CMOS Op Amp

A two-stage low-voltage CMOS op amp with rail-to-rail input and output voltage ranges is presented. The circuit uses complementary differential input pairs to achieve the rail-to-rail common-mode input voltage range. The differential pairs operate in strong inversion, and the constant transconductance is obtained by keeping the sum of the square roots of the tail currents constant. Such an input stage has an offset voltage which depends on the common input voltage level, resulting in a poor common-mode rejection ratio. Therefore, special attention has been given to the reduction of the op amp's systematic offset voltage. Gain-boost amplifiers are connected in a special way to provide not only an increase of the low-frequency open-loop gain, but also to provide a significant reduction of the systematic offset voltage.     

New low-voltage class AB/AB CMOS op amp with rail-to-rail input/output swing

A new low-voltage CMOS Class AB/AB fully differential opamp with rail-to-rail input/output swing and supply voltage lower than two V/sub GS/ drops is presented. The scheme is based on combining floating-gate transistors and Class AB input and output stages. The op amp is characterized by low static power consumption and enhanced slew-rate. Moreover the proposed opamp does not suffer from typical reliability problems related to initial charge trapped in the floating-gate devices. Simulation and experimental results in 0.5-/spl mu/m CMOS technology verify the scheme operating with /spl plusmn/0.9-V supplies and close to rail-to-rail input and output swing.