SD卡用环保塑封料研究

环氧塑封料是微电子工业和技术发展的基础材料,作为IC产品后道封装的三大主材料之一,随着IC封装技术的发展,IC产品未来发展趋势倾向于小体积和高性能化的方向,对其特性的要求也越来越严格。SD卡为目前流行的存储设备,长兴电子材料(昆山)有限公司开发出针对SD卡的EK5600GHL环保塑封料产品,此产品具有低吸湿率、低收缩率、高流动性及高可靠性的特点,可以满足SD卡封装要求。同时文章还介绍了SD卡用环保塑封料的测试数据、可靠性测试结果和客户端可靠性评估结果。     

IC环氧塑封料性能及其发展趋势

材料是微电子工业和技术发展的粮食，随着IC封装技术的发展，对材料特性的要求也愈来愈严格，也顺势带动封装材料发展。环氧塑封料(Epoxy Molding Compound，简称EMC)是IC后道封装三大主材料(塑封料、金丝、引线框架)之一，用环氧塑封料封装超大规模集成电路(VLSI)在国内外已成为主流，目前95％以上的微电子器件都是塑封器件。本文将简要介绍EMC配方组成、反应机理、性能之间关系及其发展趋势。     

LQFP封装用环保型环氧塑封料KHG700产品研制

北京科化新材料科技有限公司承担国家科技部"十一五"02重大专项子课题,成功研制出LQFP封装用环保型环氧塑封料KHG700产品,并实现产业化。经过客户验证,批量产品应用达到进口同类产品水平。KHG700产品采用环保阻燃、快速固化和高填料量技术,具有低膨胀率、低粘度、低吸湿性、高可靠性等特点,并具有优良的封装工艺性能,可用于QFP、LQFP、TQFP等类别产品封装。文中对关键封装要求做了重点分析,并详细介绍了塑封料产品配方设计、性能测试、客户可靠性试验结果。     

影响环氧塑封料应力、黏度因素分析及解决

环氧塑封料是微电子工业和技术发展的基础材料, 作为IC后道封装三大主材料之一, 随着IC封装技术的发展, 对其特性的要求愈来愈严格, 尤其对应力、黏度等性能的要求更高。文章简要分析了影响环氧塑封料应力和黏度的因素, 并提出了多个解决方案。通过实验的方式得出数据并加以分析, 通过膨胀系数的数据来反映应力大小, 膨胀系数越小, 在封装过程中产生的应力越小, 不易产生翘曲、分层现象。通过黏度数据大小来反映环氧塑封料流动性能的变化。同时文章还介绍了环氧塑封料膨胀系数和黏度的测试方法。     

环氧塑封料用热潜伏型固化促进剂的研究与应用进展

环氧塑封料（EMC）是集成电路（IC）芯片封装的关键材料之一,而固化促进剂又是影响EMC在IC封装应用中的可靠性的重要成分之一。综述了近年来国内外EMC用热潜伏型固化促进剂（TLC）在基础与应用领域中的研究进展。从IC封装用EMC的发展趋势、EMC的发展对TLC的性能需求以及当前IC封装应用中的主流EMC相关TLC材料的研究现状等几个方面进行了阐述。重点阐述了有机磷系络合型本征型TLC的研究与发展状况,对先进EMC用TLC组分的未来发展趋势进行了展望。     

高端封装对环氧塑封料的要求及解决方案

介绍了集成电路用环氧塑封料的发展方向及LED 反射杯用白色环氧塑封料的兴起。重点对QFN、BGA等单面封装、M IS 基板、MUF、Com press M olding及LED反射杯等对环氧塑封料的要求及解决方案进行了阐述。     

高导热MSL-1环氧树脂模塑料的开发与应用

基于终端客户在产品应用面对信赖性及可靠性要求越来越高的情况,开发出一种绿色环保环氧塑封料EMC-GTR,满足高导热及高可靠封装要求,用其封装的器件通过了AEC-Q101-REV-C 《基于离散半导体元件应力测试认证的失效机理》考核。     

我国半导体封装业面临的形势和思考

半导体封装形态已由常规的SIP（单列直插式封装）到DIP（塑封双列直插式封装）等低价封装形式向小型化的SOP、PLCC、QFP、PGA方向发展，再向SSOP、TSOP、QFN、TQFP、WBBGA、MCM发展、再向CSP、WLCSP、PKG、3D、QFN／SON、SiP-BGA、3D-SiP等发展。也就是说：半导体IC、TR产品的封装形式向轻、薄、短、小发展，引线脚由低脚数的DIP、SO等逐渐转向UBGA及FC-CSP等CSP类型封装、     

浅析全球环氧塑封料的发展状况

环氧塑封料(Epoxy Molding Compound)是一种半导体封装用电子材料,主要应用于半导体器件和集成电路芯片的封装。文章主要是通过对环氧塑封料的发展历程、典型技术和制造工艺,以及国内外发展状况和市场应用等方面的研究,对全球的环氧塑封料的发展状况进行浅析。文章特别提到有关绿色环保塑封料的应用情况。     

以创新求发展 以低成本战略迎接新挑战——浅谈我国半导体封装业面临的形势和思考

1、半导体封装形态已由常规的SIP（单列直插式封装）到DIP（塑封双列直插式封装）等低价封装形式向小形化的SOP、PLCC、QFP、PGA方向发展，再向SSOP、TSOP、QFN、TQFP、WBBGA、MCM发展、再向CSP、WLCSP、PKG、3G、QFN/SON、SiP-BGA、3G-SiP……等发展。也就是说：半导体IC、TR产品的封装形式向轻、薄、短、小发展，引线脚由低脚数的DIP、SO等逐渐转向UBGA及FC-CSP等CSP类型封装、再转向芯片级的WLCSP封装方式发展。     

浅谈IC封装材料对产品分层的影响及改善

IC封装不仅要求封装材料具有优良的导电性能、导热性能以及机械性能,还要求具有高可靠性、低成本和环保性,这也是引线框架、环氧树脂成为现代电子封装主流材料的主要原因,其市场份额约占整个封装材料市场的95%以上。由于环氧树脂封装是非气密性封装,对外界环境的耐受能力较差,尤其是受到湿气侵入时,产品会出现一些可靠性问题,最容易发生的现象是分层。简要分析了框架和环氧树脂对产品可靠性的影响,在此基础上提出一些改善措施。     

温度对环氧模塑料性能的影响

环氧模塑料(EMC)作为半导体产业的三大基材之一,其性能对成品器件、IC品质至关重要。凝胶化时间(GT)和螺旋长度(SF)是环氧模塑料的两个基本性能表征指标,直接决定封装工艺参数选择范围,而温度对其影响极大。制备过程、存贮、回温(Thawing)及模压(Molding)等系列工序的操作及环境温度,对EMC的综合性能有着不同程度的影响。不恰当的温度可能会导致模压操作性不良、封装体缺陷及半导体器件(电路)的成品性能下降或失效。文章重点阐述温度对EMC使用、半导体成品性能的影响。     

SOP系列IC塑封工艺及通用MGP模具设计

集成电路塑封对产品质量要求很高.传统的塑封模中几百个型腔只有一个注射头,各型腔成型工艺的差异较大,相应产品的合格率大约为96%.分析了相关IC塑封成型工艺,设计制造了一套SOP系列通用的多料筒MGP塑封模,该模具有28个注射头,每个注射头塑封20个(SOP14/16)的产品,大大减小了各型腔之间成型工艺的差距,并且通过更换不同模盒能够通用于SOP系列8、14、16三种不同产品的封装生产.经过制造和生产调试达到了设计的要求,产品合格率提高到99.9%.     

Warpage mechanism analyses of strip panel type PBGA chip packaging

The objective of this study is to analyze a warpage development mechanism by simulating a strip type packaging for plastic ball grid array. Molding compound and substrate materials were thermo-mechanically tested to obtain the mechanical properties by several test methods. Samples were fabricated using the same materials, and warpage developments were measured at room temperature after molding compound cure. Based on the tested materials property, the warpage developments were simulated by numerical calculations during cooldown process. The results were compared with the measurement data of the samples, and the warpage mechanism was investigated based on the elastic and viscoelastic simulation results. It was found that the relaxation behaviors of the molding compound and the substrate materials had significant effect on the warpage development. It was also found that the warpage development was dependent on the packaging geometry. The development mechanism was analyzed through the simulation calculations by combining different material properties modeling and geometries, and the results showed comprehensive consideration of the materials and the packaging design are essential to control the warpage.     

The impact of moisture in mold compound preforms on the warpage of PBGA packages

The moisture in the mold compound preforms influenced the resultant mechanical properties as well as the warpage of IC packages after the molding and post mold curing (PMC) process. Moisture will diffuse into the mold compound preforms (compound pallet) after thawing from cold room and exposing to clean room condition before molding process. The moisture will cause the package to swell, and combine with thermal stress, and finally result in the warpage of molded package after molding process. The main objective of this paper is to address the impact of moisture in the compound preforms on the warpage of the PBGA packages and explain the change in mechanical properties under different moisture conditions, e.g., the variations of the flexural modulus, T_g, and CTE with respect to moisture level. The compound preforms exposure to a clean room condition were simulated by a series of experiments. The warpage of PBGA packages were measured by the moiré test. The moisture control during the IC manufacturing process was highlighted in terms of the mechanical properties variation and warpage measurement due to the moisture effects on the mold compound preforms.     

Interface delamination in plastic IC packages induced by thermal loading and vapor pressure - a micromechanics model

A micromechanics model and an associated computational scheme are proposed to study interface delamination in plastic integrated circuit (IC) packages induced by thermal loading and vapor pressure. The die and die-pad are taken as elastic materials, while the die-attach and molding compound are taken as elasto-visco-plastic materials. The interface between molding compound and the die-pad is characterized by a cohesive law. The key parameters of this law are the interface strength and interface energy. The vapor-induced pressure along the interface is incorporated by way of a micromechanics model. Parametric studies are conducted to understand interface properties and vapor pressure effects on interface delamination. Under purely thermal loading, both weak and strong interfaces are highly resistant to interface failure. However, the combined effects of thermal loading and vapor pressure arising from moisture trapped within the interface can cause total delamination at the interface. Once delamination has initiated at a weak interface, no significant increase in thermal loading and vapor pressure is required for the delaminated zone to grow to a macro-crack and subsequently to catastrophic failure referred to as popcorn cracking. The critical factors controlling the occurrence of popcorn cracking are the interface adhesion strength and interface vapor pressure.     

集成电路封装溢料问题探讨

溢料问题是集成电路封装过程中常见的质量问题,如何减少溢料的发生和去除溢料方法是封装工程师、电镀工程师以及材料生产商和模具制造商共同探讨的课题。文章详细阐述了集成电路封装过程中常见的溢料发生机理,描述了溢料对组装的危害、如何防止溢料的发生以及溢料去除方法,并且对溢料去除方法的未来发展进行了展望。文中对溢料的发生机理方面进行了细致的研究,从材料、设备以及工艺方法等方面进行深入的解析,提出了有效的改善措施。另外,对业内溢料去除的几种方法进行介绍的同时,强调了各种溢料去除方法的效果及对产品质量的影响,并进行了有效评估。文章对溢料发生和去除方法的探讨是建立在理论基础之上,运用最细致的解析手段进行剖析,更具有指导意义,为提高集成电路封装良率以及组装良率提供理论支持。     

面板显示驱动电路的失效分析及对策

文章主要对集成电路失效问题进行分析,列举出了容易引起集成电路失效的原因:压焊劈刀选型不当,生产过程中造成芯片表面沾污,芯片表面内压焊点铝层与底层硅化合物结合不牢,选用压焊参数不当,环氧塑封料的特性不佳,存储环境恶劣导致成品电路吸潮等,并逐一进行了分析。同时,还简要的对环氧塑封料特性:耐热性、耐腐蚀性、热膨胀系数、电气特性、耐湿性、结合力方面引起集成的电路失效进行了进一步的分析,提出了预防因产品吸潮而引起塑封体与芯片表面产生分层造成集成电路失效的方法。     

The effect of polyimide surface chemistry and morphology on critical stress intensity factor

The increasingly severe demands of concurrently increasing die size while reducing the package size have made the mechanical stability of IC packaging technologies a grave concern. The dominant failure is caused at the interface between dissimilar materials. To investigate the effect of polyimide surface morphology and chemistry on the epoxy molding compound adhesion, the polyimide samples were characterized by X-ray photoemission spectroscopy, atomic force microscopy, attenuated total reflection and interfacial adhesion tests. The results of the characterization and an explanation of the primary factors affecting interfacial adhesion are presented in this paper.