在多工位炉上CeO2:Bi12SiO20单晶生长的研究(Ⅱ)——空间生长实验部分

掺CeBi12SiO20单晶在神舟3号(SZ-3)飞船上成功地进行了空间生长,得到晶体尺寸为φ10mm×40mm.将空间生长的晶体和地面生长晶体对比发现空间生长晶体的外观同地面生长晶体有明显差异.分析测试空间和地面晶体的X射线摇摆曲线、吸收曲线和喇曼光谱,结果表明空间生长掺CeBSO晶体的结构完整性优于地面生长的晶体,掺Ce对BSO晶体光学性能的影响空间制备晶体要大于地面制备的晶体     

在多工位炉上CeO2:Bi12SiO20单晶生长的研究(Ⅰ)──地面生长实验部分

Ｂｉ_１２ＳｉＯ_２０是一种优质的光折变晶体．但在地面生长掺Ｃｅ：ＢＳＯ晶体时遇到的主要问题是分凝系数远远＜１，导致晶体组分不均匀．本文采用在空间生长掺Ｃｅ：ＢＳＯ晶体的多工位炉进行地面晶体生长，测试了ＣｅＯ_２浓度分布和掺Ｃｅ：ＢＳＯ晶体的透过率，以便同空间生长掺Ｃｅ：ＢＳＯ晶体进行比较．     

硅酸铋(BSO)晶体的空间生长

BSO晶体首次在飞船上进行了空间晶体生长.本文对空间和地面生长的BSO晶体进行了X射线摇摆曲线、位错腐蚀和透过率的测试.实验结果表明:在微重力环境下能明显提高BSO晶体的光学质量.     

掺铈硅酸镥(Lu2SiO5:Ce)晶体的生长与闪烁性能

用Czochralsky方法和铱坩埚感应加热技术生长出了尺寸为φ35mm×40mm的掺铈硅酸镥(LSO:Ce)闪烁晶体.透射光谱表明,由于铈离子的掺入,使晶体的吸收边由纯LSO晶体的195nm红移至380nm.LSO:Ce晶体的紫外激发波长按强度递减的顺序依次为380、333、319和216nm,其光发射为带状谱,波长覆盖范围从390nm至560nm.X射线激发的发射谱具有典型的双峰特征,峰值波长为393nm和.426nm.这些特征与Ce3+离子基态能级4f1因自旋-轨道耦合而产生的两个分裂能级和Ce+离子在LSO晶体中占据两个不同的结晶学格位有关.     

空间和地面生长LiIO3晶体比热的对比研究

用差示扫描量热计（DSC）测定了空间和地面生长的碘酸锂晶体在-100～350℃温度范围内的比热，据此分别给出了相应的计算比热的经验方程．经验方程计算值和实验值之间的最大百分偏差＜±1％.结果显示，空间和地面生长LiIO3晶体的比热在测量温度范围内无明显差别．     

Li6Gd(BO3)3:Ce晶体的提拉法生长和闪烁性能

采用提拉法和铂坩埚感应加热技术生长出最大尺寸为直径25mm，长40mm的Li6Gd（BO3）3：Ce晶体，XRD分析表明，生长出的晶体为单一的Li6Gd（BO3）3：Ce相，结构属P21／c空间群．对晶体生长中存在的解理开裂、应力开裂及多晶问题进行了讨论，并从晶体结构的角度解释了（020）完全解理面出现的原因．晶体在380-800nm之间的透过率接近90％，200-380nm之间的吸收是由Ce^3＋离子的4f-5d跃迁和Gd^3＋离子的4f-4f跃迁引起的．不同激发源激发下的发射均显示Ce^3＋离子的双谱峰特征；相比于紫外激发下的发射而言，X射线激发下的发射光谱略有红移．该晶体发光符合单指数衰减模型，衰减时间为30．74ns，在241^Am源的α射线激发下晶体的能量分辨率为28．84％．     

大尺寸 Ce:Lu1.6Y0.4SiO5闪烁晶体的生长和光谱特性

采用中频感应提拉法生长出尺寸为φ60mm×110mm的CeLu1.6Yo.4SiO5(LYSO)晶体,与LSO晶体相比,LYSO晶体的优势是提高了晶体质量、降低了熔点和原料成本等.在室温下测试了LYSO晶体的透过光谱、激发光谱和发射光谱,结果表明Y的加入使LSO晶体的吸收边向短波方向偏移.Ce3+的4f1→5d1跃迁吸收导致紫外区产生三个吸收带.发射光谱具有Ce3+典型的双峰特征,经Gaussian多峰值拟合,双峰395nm和418nm归属于Ce1发光中心,而435nm的发光峰与Ce2发光中心有关.     

LuxY1-xAl 3:Ce晶体中伴生(Lu,Y3 Al5O12:Ce相成因研究

采用提拉法制备了LuxY1-xAlOa:Ce晶体样品,通过XRD物相分析和成分分析,并结合Lu2O3-Al2O3二元体系相图以及LuxY1-xAlO3:Ce 结构稳定性方面的分析与讨论,结果表明:随着熔体中Lu元素含量的增加,熔体分层加剧,析晶LuxY1-xAlO3:Ce相的熔体组成区间将向富Lu一侧偏移,这使得晶体上部易伴生(Lu,Y)3Al5O12:Ce相;而随着Lu元素含量的提高, LuxY1-xAlO3:Ce晶体的热稳定性降低,氧空位的存在则使晶体的热稳定性进一步降低,在接种过程中籽晶表面易发生相分解反应生成(Lu,Y)3Al5O12:Ce和(Lu,Y)4Al2O9:Ce,籽晶表面相分解产物(Lu,Y)3Al5O12:Ce提供了诱导析晶(Lu,Y)3Al5O12:Ce相所需的晶核,这使得晶体的外表面处易伴生(Lu,Y)3Al5O12:Ce相.调整配料组成使n((Lu,Y)2O3):n(A12O3)=1.17～100,加大熔体内部和固液界面处的温度梯度以改善熔体对流、抑制熔体分层以及籽晶表面处的相分解等有助于高Lu元素含量LuxY1-xAlO3:Ce晶体的获得.     

掺镁近化学计量比LiNbO3晶体的生长

利用提拉法，从掺入11mol％K2O和1mol％MgO的化学配比LiNbO3熔体中生长了高质量的掺镁近化学计量比LiNbO3晶体．与同成分LiNbO3晶体相比，紫外吸收边发生明显蓝移，OH^-红外吸收峰的位置和波形也发生了显著的变化，初步断定晶体中Mg^2 的掺杂浓度已达到抗光伤阈值浓度．酸腐蚀结果表明，晶体具有区域性单畴结构。     

光学浮区法生长YFeO3晶体

采用光学浮区法生长了新型磁光晶体YFeO3，通过工艺优化，获得了Ф（7-10）mm、长度约60mm的YFeO3晶体、XRD分析表明晶体具有正交钙钛矿结构，晶格常数a=5．5964A，b=7．6052A，c=5．2842A．晶体生长界面为凸界面，生长取向接近[100]方向、晶体截面抛光后观察，未发现肉眼可见的包裹体、晶界等缺陷、     

Growth of thin plates of Bi12SiO20 single crystals

Thin plates of Bi₁₂SiO₂₀ (BSO) single crystal were grown by the EFG method. In this experiment, three different kinds of dies with planar, angular-concave, and concave top geometries were used. The experiment proved that it is possible to achieve stable growth of cm-sized thin plates of BSO single crystals using a die with a concave die-top geometry. The effect of die-top geometry on growth stability is qualitatively explained according to the meniscuc model developed by V. A. Tatarchenko.     

Nd3+:Gd3Ga5O12晶体的热物理性能研究

提拉法生长了Nd^3＋：Gd3Ga5O12（Nd：GGG）单晶，用差示扫描量热法（DSC）和激光脉冲法分别测量了Nd：GGG激光晶体的比热和热扩散系数，计算得到晶体的导热系数，与用PPMS测量得到的导热系数相吻合．实验结果表明：Nd：GGG激光晶体具有较大的比热和导热系数，具有良好的热物理性能；Nd：GGG晶体的热扩散系数和导热系数随着温度的升高而减小；计算得到晶体的德拜温度为711K．     

Fiber single crystal growth by LHPG technique and optical characterization of Ce-doped Lu2SiO5

The laser heated pedestal growth (LHPG) technique has been applied to grow undoped and doped Lu₂SiO₅:Ce³⁺ (LSO:Ce) single crystals fibers with stable diameter. The starting cerium concentration in the melt was [0.05–1] at.%. The thermal and growth conditions allowing pulling transparent single crystals fiber’s were optimised. The fibers have been grown under N₂ + 1% O₂ atmosphere (1 bar). The Ce³⁺ segregation coefficient is 0.28 greater than the crystal grown by Czochralski technique. The as grown fibers demonstrated scintillating properties.     

Influence of microgravity on Ce-doped Bi<Subscript>12</Subscript>SiO<Subscript>20</Subscript> crystal defect

Space grown BSO crystal doped with Ce was characterized by means of X-ray fluorescence spectra, X-ray topography, dislocation density etc. Influence of microgravity on Ce-doped BSO crystal defect was studied by comparing space grown BSO crystal with ground grown one. These results show that compositional homogeneity and structural perfection of crystal can be improved under microgravity conditions.     

Ce,Eu双掺BSO晶体光折变效应研究

在ＢＳＯ晶体中同时掺入Ｃｅ和Ｅｕ离子，生长了Ｃｅ：Ｅｕ：ＢＳＯ晶体，对晶体的二波耦合和四波混频性能了测试。结果表明，Ｃｅ和Ｅｕ离子对晶体的光折变效应起到了增强的作用。     

Comparison of space- and ground-grown Ce: Bi12SiO20 single crystals

Ce doped Bi₁₂SiO₂₀ single crystals were grown either on board of the Chinese Spacecraft-Shenzhou No.3 (SZ-3) or on the ground at the same conditions with the exception of microgravity. The surface morphology of crystals clearly showed significant differences between the space- and ground-grown portions. The space- and ground-grown crystals have been measured by X-ray rocking curve, Ce concentration distribution in growth direction, dislocation density, absorption spectrums. These results show that the compositional homogeneity and structural perfection of Ce doped crystal grown in space are obviously improved.     

Raman and optical spectroscopy characteristics of Se-doped Bi12SiO20 crystals

Crystals of BSO doped with Se in two different concentrations (BSO:Se(I) and BSO:Se(II)) were grown by the Czochralski method. It is established that doping with Se is accompanied with preferential absorption of Fe from the melt. According to the in-depth chemical analysis, it is assumed that the doping Se ions enter the tetrahedral positions by means of the substitution of 3Si⁴⁺ by (Se⁶⁺ + 2Fe³⁺) ions. The measured absorption spectrum of the low-concentration Se-doped crystal (BSO:Se(I)) confirms such a conclusion as the absorption coefficient is increased in a broad spectral interval (1.4-3.1 eV) - an effect typical for all Fe-doped Bi₁₂SiO₂₀ crystals. The polarized Raman spectra of BSO:SeI show that the doping-induced lattice distortions are small. The IR spectrum of the BSO:SeI crystal yields indications for local lowering of the symmetry of the Fe-occupied tetrahedral positions. Doping with Se at high concentration (BSO:Se(II)) leads to occasional second phase inclusions and to a downshift of practically all modes in the Raman spectrum by 2-5.5 cm⁻¹. It is concluded that the doping with Se at high concentrations follows the same mechanism as that at low concentrations but the introduced lattice distortions are more significant, and lead to an enlargement of the unit cell while preserving the overall cubic symmetry.