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随着微电子技术发展,要使器件水平进一步提高,除了进一步缩小芯片的特征尺寸外,采用新型材料也是有效的方法。文章介绍了SOI解决方案,阐述了SOI器件与体硅器件相比具有的明显优点。文章重点介绍了SOI晶圆材料的制备方法,目前广泛使用且较有发展前途的SOI的材料制备方法主要有注氧隔离的SIMOX(Seperation by Impolanted Oxygen)方法、硅片键合和反面腐蚀的BESOI(Bonding-Etchback SOI)方法、将键合与注入相结合的Smart Cut SOI方法。指出了SOI很有可能成为今后高性能和高可靠集成电路材料的主流。 相似文献
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In this research paper, demonstrates, the logic performance of n and p channel complementary metal oxide semiconductor (CMOS) circuits implemented with dual material gate silicon on insulator junctionless transistor (DMG SOI JLT). The logic performance of a CMOS circuit is evaluated in terms of static power dissipation, voltage transfer characteristic, propagation delay and noise margin. The gate capacitance is less as compared to gate capacitance of DMG SOI transistor in saturation. The power dissipation for CMOS inverter of DMG SOI JLT is improved by 25% as compared to DMG SOI transistor. The DMG SOI JLT common source amplifier has 1.25 times amplification as that of DMG SOI transistor. The noise margin of DMG SOI JLT CMOS inverter is improved by 23% as compared to the DMG SOI transistor CMOS inverter. The NAND gate static power dissipation of DMG SOI JLT is found improved imperically as compared to DMG SOI transistor for various channel length. The improvement obtained is 53% for 20nm, 46% for 30nm and 34% for 40nm respectively. Static power dissipation of DMG SOI JLT inverter is reduced by 3% as compared to junction transistor inverter at channel length of 30nm. 相似文献
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基于绝缘体上硅技术,提出并研制动态阈值nMOSFETs结构.阐述了动态阈值nMOSFETs的工作原理.动态阈值nMOSFETs的阈值电压从VBS=0 V时的580 mV动态变化到VBS=0.6 V时的220 mV,但是这种优势并没有以增加漏电流为代价.因此动态阈值nMOSFETs的驱动能力较之浮体nMOSFETs在低压情况下,更具有优势.工作电压为0.6 V时,动态阈值nMOSFETs的驱动能力是浮体的25.5倍,0.7 V时为12倍.而且浮体nMOSFETs中的浮体效应,诸如Kink效应,反常亚阈值斜率和击穿电压降低等,均被动态阈值nMOSFETs结构有效抑制. 相似文献
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Udrea F. Garner D. Sheng K. Popescu A. Lim H.T. Milne V.I. 《Electronics & Communication Engineering Journal》2000,12(1):27-40
This paper provides an introduction to silicon-on-insulator (SOI) technology and the operating principles of high-voltage SOI devices, reviews the performance of the available SOI switching devices in comparison with standard silicon devices, discusses the reasoning behind the use of SOI technology in power applications and covers the most advanced novel power SOI devices proposed to date. The impact of SOI technology on power integrated circuits (PICs) and the problems associated with the integration of high-voltage and low-voltage CMOS are also analysed 相似文献
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The context of SOI technologies is briefly presented in terms of wafer fabrication, configuration/performance of typical SOI devices, and operation mechanisms in partially and fully depleted MOSFETs. The future of SOI is tentatively explored, by discussing the further scalability of SOI transistors as well as the innovating architectures proposed for the ultimate generations of SOI transistors. 相似文献
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介绍了绝缭体上硅(SOI)材料的制作方法.阐进了SOIMOSFET器件的热载流子注入效应的失效机理。研究表明:前沟和背面缺陷的耦合效应是SOI器件的特有现象.对SOI器件的退化构成潜在的威胁。虽然失效机理比体硅器件复杂,但并不会阻碍高性能、低电压ULSI SOI电路的发展。 相似文献
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Mansun Chan Yuen S.S. Zhi-Jian Ma Hui K.Y. Ko P.K. Chenming Hu 《Electron Devices, IEEE Transactions on》1995,42(10):1816-1821
The electrostatic discharge (ESD) protection capability of SOI CMOS output buffers has been studied with Human Body Model (HBM) stresses. Experimental results show that the ESD voltage sustained by SOI CMOS buffers is only about half the voltage sustained by the bulk NMOS buffers. ESD discharge current in a SOI CMOS buffer is found to be absorbed by the NMOSFET alone. Also, SOI circuits display more serious reliability problem in handling negative ESD discharge current during bi-directional stresses. Most of the methods developed for bulk technology to improve ESD performance have minimal effects on SOI. A new Through Oxide Buffer ESD protection scheme is proposed as an alternative for SOI ESD protection. In order to improve ESD reliability, ESD protection circuitries can be fabricated on the SOI substrate instead of the top silicon thin film, after selectively etching through the buried oxide. This scheme also allows ESD protection strategies developed for bulk technology to be directly transferred to SOI substrate.<> 相似文献
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Fabrication and Simulation of Silicon-on-Insulator Structure with Si3N4 as a Buried Insulator 总被引:2,自引:1,他引:1
In order to minimize the self-heating effect of the classic SOI devices,SOI structures with Si3N4 film as a buried insulator (SOSN) are successfully formed using epitaxial layer transfer technology for the first time.The new SOI structures are investigated with high-resolution cross-sectional transmission electron microscopy and spreading resistance profile.Experiment results show that the buried Si3N4 layer is amorphous and the new SOI material has good structural and electrical properties.The output current characteristics and temperature distribution are simulated and compared to those of standard SOI MOSFETs.Furthermore,the channel temperature and negative differential resistance are reduced during high-temperature operation,suggesting that SOSN can effectively mitigate the self-heating penalty.The new SOI device has been verified in two-dimensional device simulation and indicated that the new structures can reduce device self-heating and increase drain current of the SOI MOSFET. 相似文献
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回顾了应用于 SOI功率集成电路的 SOI功率器件的发展背景 ,论述了 SOI功率器件的开发现状 ,以及作为 SOI功率器件基础的 SOI材料制备技术和耐压结构研究的最新进展。同时指出了在 SOI功率器件研究中需要解决的问题 ,以及今后的研究发展重点 相似文献
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采用SIMOX材料,研制了一种全耗尽CMOS/SOI模拟开关电路,研究了全耗尽SOI MOS场效应晶体管的阈值电压与背栅偏置的依赖关系,对漏源击穿的Snapback特性进行分析,介绍了薄层CMOS/SIMOX制作工艺,给出了全耗尽CMOS/SOI电路的测试结果。 相似文献
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Nakajima H. Yanagi S. Komiya K. Omura Y. 《Electron Devices, IEEE Transactions on》2002,49(10):1775-1782
This paper estimates the off-leakage current (I/sub off/) and drive current (I/sub on/) of various SOI MOSFETs by simulations based on the hydrodynamic-transport model; the band-to-band tunneling (BBT) effect at the drain is taken into consideration. Here, the simulations are done for SOI structures with a thick channel where the distinct quantization of energy is irrelevant to the present results. It is shown that merging hydrodynamic transport with the BBT effect is indispensable if realistic I/sub off/ estimates are to be achieved. It is shown that the symmetric double-gate SOI MOSFET does not always offer better drivability than other SOI MOSFETs, and that a single-gate SOI MOSFET with carefully selected parameters exhibits superior performance to double-gate SOI MOSFETs. It is also demonstrated that the quantum tunnel current is not significant, even in 20-nm channel SOI MOSFETs. The results suggest that we can still employ the conventional semi-classical method to estimate the off-leakage current of sub-100-nm channel low-power SOI MOSFETs. 相似文献
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This letter proposes a new device structure which is called the “partial-ground-plane (PGP) silicon-on-insulator (SOI) MOSFET.” The PGP SOI MOSFET minimizes the short-channel effect (SCE) compared to the conventional single-gate (SG) SOI MOSFET because the gate-induced field in the SOI layer is held high by the PGP region. This results in a lower stand-by leakage current. The PGP SOI MOSFET also shows much better switching performance and extremely high analog performance because of its smaller parasitic capacitance compared to the conventional ground-plane (GP) device. Thus, it is shown that the PGP SOI MOSFET is a promising candidate for future deep-sub-0.1-μm mixed-mode LSIs 相似文献
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This paper reports on a study of the inversion-layer mobility in n-channel Si MOSFETs fabricated on a silicon-on-insulator (SOI) substrate. In order to make clear the influences of the buried-oxide interface on the inversion-layer mobility in ultra-thin film SOI transistors, SOI wafers of different quality at the buried-oxide interface were prepared, and the mobility behaviors were compared quantitatively. The transistors with a relatively thick SOI film exhibited the universal relationship between the effective mobility and the effective normal field, regardless of the buried-oxide interface quality. It was found, however, that Coulomb scattering due to charged centers at the backside interface between SOI films and buried oxides has great influence on the effective mobility in the thin SOI thickness region, depending on the buried-oxide interface quality. This means that Coulomb scattering due to charged centers at the buried-oxide interface can degrade the mobility with decreasing SOI thickness, unless the SOI wafer quality at the buried-oxide interface is controlled carefully 相似文献
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An off-state leakage current unique for short-channel SOI MOSFETs is reported. This off-state leakage is the amplification of gate-induced-drain-leakage current by the lateral bipolar transistor in an SOI device due to the floating body. The leakage current can be enhanced by as much as 100 times for 1/4 μm SOI devices. This can pose severe constraints in future 0.1 μm SOI device design. A novel technique was developed based on this mechanism to measure the lateral bipolar transistor current gain β of SOI devices without using a body contact 相似文献
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Knoch J. Min Zhang Mantl S. Appenzeller J. 《Electron Devices, IEEE Transactions on》2006,53(7):1669-1674
The authors study the dependence of the performance of silicon-on-insulator (SOI) Schottky-barrier (SB) MOSFETs on the SOI body thickness and show a performance improvement for decreasing SOI thickness. The inverse subthreshold slopes S extracted from the experiments are compared with simulations and an analytical approximation. Excellent agreement between experiment, simulation, and analytical approximation is found, which shows that S scales approximately as the square root of the gate oxide and the SOI thickness. In addition, the authors study the impact of the SOI thickness on the variation of the threshold voltage V/sub th/ of SOI SB-MOSFETs and find a nonmonotonic behavior of V/sub th/. The results show that to avoid large threshold voltage variations and achieve high-performance devices, the gate oxide thickness should be as small as possible, and the SOI thickness should be /spl sim/ 3 nm. 相似文献