基于查表法的多项式内插器的实现

提出了一种基于查表的多项式内插器结构,解决了多路并行内插占用大量乘法器资源的问题.首先证明了内插多项式系数存在一种对称关系,然后利用此关系设计了基于查表法的多项式内插器,并在FPGA上实现.实现结果表明:本方法结构简单,占用乘法器资源少,其复杂度与内查多项式的阶数无关,不足之处是需要占用很多的存储器资源.     

内插滤波器及其FPGA实现

在数字信号处理过程中，内插可以大大降低被处理信号的采样率。与其它内插函数相比，辛格函数内插不权可以降低内插误差，还可以利用辛格函数的对称性减小内插电路的复杂性。本文先讨论了不同窗函数载断对辛格函数内插误差的影响，然后提出一种实现辛格函数内插的方法，并用FPGA实现了这种内插器。     

内插在码元同步中的应用及实现

在采样时钟固定且采样速率受限的情况下接收机的采样时刻不一定在信号的最佳判决点,此时码元判决受ISI影响较为严重。该文以数字内插理论为基础,提出了利用内插提高码元同步精度的方法,讨论了内插滤波器的特性及其基于多相分解的硬件实现结构。     

高吞吐率任意倍内插滤波器设计

提出了一种高吞吐率用于任意倍内插的并行FARROW滤波器。在串行FARROW内插滤波器的基础上,通过数学推导得出了基于多相分解的并行FARROW内插滤波器。该滤波器由并行FIR滤波器、多输入多输出选择器、累加器和乘加器构成,详细讨论了这些模块在FPGA上的实现方法。仿真试验表明:该并行结构滤波器能够在低时钟速率下提供高吞吐率的任意小数或整数倍内插,实现灵活的采样率变换。     

基于倍数内插的边带调制算法

抽样率提升的边带调制方式在数字化电台以及软件无线电中均具有重要意义。本文通过分析抽样率整数倍提升的实现过程,提出了内插器的概念及其构成方法,给出了一种基于内插器构成的抽样率整数倍提升的边带调制算法。     

全数字QAM解调器的设计与FPGA实现

正交幅度调制(QAM)是一种频谱利用率较高的调制方式。分析了影响解调性能的主要因素以及解决方法,提出了一种QAM解调器的全数字实现结构。介绍了符号同步环路的构成,在设计中采用FARROW结构立方内插器,内插控制器为内插器提供控制变量,对内插控制器的实现进行了详细介绍,定时误差提取采用Gardner算法。采用结合均衡的载波恢复混合结构,显著提高了载波恢复的性能。所设计的解调器可以应用于通信、侦察接收机中。     

基于时分处理的FIR内播滤波器的设计与实现

本文从设计原理和硬件结构两个方面对FIR内插滤波器的设计与实现方法进行了分析。以降低年开销和提高处理速度为目标，提出了基于滤波器时分处理的多相滤波器设计方法，并针对具体器件就算法的实现进行了讨论。最后，以第三代移动通信系统WCDMA中基带成形滤波器为实例比较了几种方法之间的差异。     

Gardner算法实现基带信号位同步技术探讨

利用Gardner算法实现基带信号位同步,能比较好地解决基带信号频率与本地时钟频率不同步的问题。系统位同步环路由插值器,TED误差检测器,环路滤波器和控制器组成,利用对经本地时钟采样后的基带信号内插产生的误差信号经TED,环路滤波传送到控制器,再从NCO提取误差控制参数反馈到内插器,不仅可以计算出最佳插值位置,也可以得到具体最佳值的大小。实际验证该系统具有良好的性能,且结构简单,易于实现,适用于高速数字接收机的调制解调系统。     

无线信道中OFDM系统的频偏估计

OFDM技术作为一种适用于高速无线传输的调制技术近年来越来越受到关注。但 OFDM系统的显著问题是对频率偏移十分敏感。针对OFDM信道传输系统,提出了一种频率 偏移估计算法。该估计器采用内插技术,通过频域来实现,与传统的最大似然估计器相比,该 算法具有良好的性能和较简单的结构。     

分数倍内插成形滤波器设计及实现

提出了一种分数倍内插成形滤波器的实现方法并在FPGA中实现。该分数倍内插成形滤波器实现了输入速率与内插成形滤波后速率之间分数倍转换,能够适应输入速率实时调整,突破了传统整数倍内插成形滤波器对输入速率的限制。实现了输入速率为1 KS/s~50 MS/s,步进为1 S/s,输出为100~2 000 MS/s,内插倍数4,分数时延精度为Tclk65 536的滤波器。该分数倍内插成形滤波器硬件资源开销小、接口简洁、灵活性和适用性强,还可根据需要扩展变速率范围。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.