基于改进TOPSIS的配用电通信网性能评估方法

针对传统的层次分析法的不足,研究了多指标综合评估系统中指标权重的确定问题,并提出一种基于改进TOPSIS的配用电通信网性能评估方法。该方法将SAW方法、TOPSIS方法与改进的AHP方法相结合对配用电通信网进行综合评估,并针对TOPSIS方法无法对中垂线上的数据进行处理的问题,提出了新的基于相对熵的TOPSIS方法。仿真结果表明,改进的TOPSIS方法更适合对指标敏感的配用电网络进行评估。     

基于Vague集TOPSIS法的防空战场信息感知系统效能评估

为了对联合防空战场信息感知系统进行效能评估,提出了基于Vague集的TOPSIS法。首先利用Vague值表示影响信息感知系统效能的定性指标,然后利用层次分析法确定各指标的权重,最后采用TOPSIS法对感知系统的效能进行了评估。并通过实例说明基于Vague集的TOPSIS法是有效的,可以对联合防空战场信息感知系统进行效能评估提供参考。     

基于AHP和TOPSIS的教师评价模型

对于教师的综合考评是高等学校的一项重要任务。文中给出了利用层次分析法(AHP)和逼近理想解的排序方法 (TOPSIS)的教师综合评价模型。首先利用AHP确定各评价指标的权重,在此基础上采用TOPSIS算法给出教师综合评价排序的准则。经过数据验证,证明该算法是有效的。     

复杂系统电磁兼容评估的改进TOPSIS方法

本文针对复杂系统电磁兼容要素特点和传统TOPSIS无法实现评估结果重用的问题,建立了其系统评估贴近度模型,确定了基于ANP(网络层次分析)的网络分层指标赋权策略,采用基于历史数据库样本统计方法确定的广义基准点替代传统TOPSIS方法仅在待评估方案中确定的正负理想点,应用加权距离算子实现电磁兼容综合评估;最后通过某车载通信系统的评估实例,验证了方法的正确性.     

基于FAHP-RS和证据推理的雷达信号特征提取评估

针对当前雷达辐射源信号特征提取评估的研究不够深入,评估方法单一和缺乏科学性等问题,提出一种新的评估方法。基于构建的雷达辐射源信号特征提取评估指标体系,首先采用模糊层次分析法和粗糙集理论分别得到主客观权重,并建立优化模型进行权重融合,然后采用证据推理方法融合指标和权重,最后基于综合置信度完成方案排序。仿真实验表明,该评估方法可用来选出最符合用户需求的方案,与改进TOPSIS评估方法的比较结果说明了所提出方法的有效性和优越性。     

基于改进型模糊层次法的维修性综合评估研究

分析了影响维修性的各种因素,建立了评估指标体系,利用改进型的层次分析法而计算得到指标权重;最后运用模糊综合评估的方法来建立某装备的评估模型,并给出实例,结果验证了该模型的合理性和有效性。     

基于模糊层次分析法的雷达效能评估方法

本文针对雷达系统指标的相对性、模糊性,运用模糊数学方法建立模糊综合评价模型。对雷达系统数能评估问题,提出了一种基于模糊层次分析法评估效能的模型。本文以两部雷达为例给出综合评判的分析实例。     

基于主客观权重集成的训练评估方法

针对装备维修仿真训练中指标主观赋权法成绩评估的局限性,在评估中指标综合权重集成了主观权重和客观权重。分别采用层次分析法计算指标主观权重,熵值法计算客观权值,按最优化模型将主观权值和客观权值集成为综合权值。这种方法考虑了每个评估指标成绩差异性所携带的训练水平信息,从而改进了传统指标主观赋权评估方法。通过实践证明,基于该方法训练评估结果有更高的可信度。     

改进的雷达信号识别效能评估方法

针对以往雷达信号识别效能评估方法中评估指标选取模糊、指标权重设置单一、评估排序不合理的问题,提出了基于IAHP-Entropy-I2TOPSIS模型改进的雷达信号识别效能评估方法。其主要思路是基于识别率测试结果建立树状评估指标体系;采用IAHP和Entropy分别确定主观指标权重和客观指标权重,并通过线性组合方法确定综合权重;运用区间型多属性决策的夹角度量法改进区间TOPSIS得到I2TOPSIS并依此进行评估排序。最后通过实例仿真,验证了所提方法的有效性。     

基于时空图的机会网络关键节点评估

为获取机会网络动态拓扑结构,使用时空图模型对机会网络进行建模,使用了节点平均度、介数中心性和整网消息转发率三个评估指标来评估节点的重要程度。使用接近理想解法(Technique for Order Preference by Similarity to an Ideal Solution, TOPSIS)方法以及基于马氏距离的TOPSIS方法来对机会网络中关键节点进行评估。采用节点计算移除节点后的整网消息投递成功率来验证评估结果的正确性,发现基于马氏距离的TOPSIS方法的评估效果要比TOPSIS方法更好。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.