金刚石体积分数对金刚石/铜复合散热材料相关性能的影响

采用粉末注射成形-熔渗技术在不同金刚石体积分数(50%、60%、70%、80%)条件下制备金刚石/铜复合散热材料。利用阿基米德排水法、热分析仪和激光闪烁法等测试了金刚石/铜复合散热材料性能。试验结果表明,随着复合材料中金刚石体积分数的提高,复合散热材料的膨胀系、致密度以及热导率相应的下降,但当金刚石体积分数超过70%时,复合散热材料的性能下降趋势并不突出。     

CVD金刚石膜散热性能的实验及仿真分析

本文基于化学气相沉积(CVD)金刚石膜的超高热导率,设计并搭建了一套实验系统,分析其对于小空间高热流密度电子元件的散热效果。通过测量加热器及材料表面的温度值可知,相同工况下,金刚石膜温度梯度小,温度分布均匀性好,表面最大温差仅为铜的一半且加热面温度相比于铜更低。实验结果说明CVD金刚石膜的散热性能明显优于传统散热材料铜。实验验证了经过Ti-Ni-Au金属化处理的CVD金刚石薄膜具有可焊性。在实验基础上,利用Flotherm软件对系统进行仿真建模,进一步探讨了材料厚度、热导率及接触热阻对加热面温度和最大热流密度的影响。     

金刚石散热衬底在GaN基功率器件中的应用进展

氮化镓(GaN)基功率器件性能的充分发挥受到沉积GaN的衬底低热导率的限制,具有高热导率的化学气相沉积(CVD)金刚石,成为GaN功率器件热扩散衬底材料的优良选择。相关学者在高导热金刚石与GaN器件结合技术方面开展了多项技术研究,主要包括低温键合技术、GaN外延层背面直接生长金刚石的衬底转移技术、单晶金刚石外延GaN技术和高导热金刚石钝化层散热技术。对GaN功率器件散热瓶颈的原因进行了详细评述,并对上述各项技术的优缺点进行了系统分析和评述,揭示了各类散热技术的热设计工艺开发和面临的技术挑战,并认为低温键合技术具有制备温度低、金刚石衬底导热性能可控的优势,但是大尺寸金刚石衬底的高精度加工和较差的界面结合强度对低温键合技术提出挑战。GaN外延层背面直接生长金刚石则具有良好的界面结合强度,但是涉及到高温、晶圆应力大、界面热阻高等技术难点。单晶金刚石外延GaN技术和高导热金刚石钝化层散热技术则分别受到单晶金刚石尺寸小、成本高和工艺不兼容的限制。因此,开发低成本大尺寸金刚石衬底,提高晶圆应力控制技术和界面结合强度,降低界面热阻,提高金刚石衬底GaN器件性能方面,将是未来金刚石与GaN器件结合技术发展的重点。     

微波CVD金刚石薄膜用作LED散热片的制备

由于金刚石具有室温下最高的热导率,因此用化学气相沉积(CVD)制备的金刚石膜是大功率发光二极管(LED)理想的散热材料.本文利用微波等离子体CVD研究了不同沉积工艺下金刚石薄膜的生长.用扫描电子显微镜(SEM)和拉曼光谱对得到的金刚石薄膜进行了表征,并将金刚石薄膜用作LED散热片的散热效果进行了检测.结果表明:在硅衬底上沉积20-30μm的CVD金刚石薄膜可以有效地降低LED的工作温度;在相同的制备成本下,提高薄膜的厚度(甲烷浓度4%)比提高薄膜的质量(甲烷浓度2%)更有利于提高LED的散热效果.本研究表明微波等离子体CVD制备的金刚石薄膜是大功率LED的理想散热衬底材料.     

高导热金刚石/铜复合材料的导热研究进展

金刚石/铜复合材料具有密度低、热导率高及热膨胀系数可调等优点,且与新一代芯片具有良好的热匹配性能,因此其在高热流密度电子封装领域具有非常广泛的应用前景。然而由于金刚石与铜界面润湿性差,界面热阻高,导致材料热导率比铜还低,限制了其应用。为了改善其界面润湿性,国内外通过在金刚石表面金属化或对铜基体预合金化等手段来修饰复合材料界面,以提高金刚石/铜复合材料的热导率。本文综述了表面改性、导热模型相关的界面理论以及有限元模拟的研究进展,讨论了制备工艺、导热模型和未来发展的关键方向,总结了金刚石添加量、颗粒尺寸等制备参数对其微观组织结构和导热性能的影响规律。     

真空气相反应烧结法制备金刚石-碳化硅复合材料

金刚石-碳化硅复合材料具有热导率高、热膨胀系数匹配、轻质、高硬度、物理化学稳定性好等特点,是理想的电子封装材料,因而近年来受到广泛关注。真空气相反应渗透工艺是在真空条件下将蒸气通入预制的多孔基体中发生化学反应,从而获得致密化的复合材料,该工艺具有周期短、效率高、成本低、对设备要求低、近净成形等特点。以酚醛树脂为粘结剂,Si作为渗料,采用真空气相反应渗透工艺制备了金刚石-碳化硅复合材料。讨论了金刚石含量,压制压力和基体孔隙率的关系。通过XRD、SEM等手段分析了材料的物相组成、显微结构以及渗透过程。实验结果表明,材料由金刚石,碳化硅,少量残留硅三相组成,碳化硅在金刚石表面附着,结合比较紧密,材料具有很高的致密度和导热性能。压制压力和孔隙率之间呈现负相关,金刚石含量和孔隙率之间呈现正相关。混合粒径金刚石制备的复合材料中金刚石的含量明显提高,材料的热导率最高达到了620W/(m·K)。     

高导热金刚石/铜复合材料研究进展

金刚石/铜复合材料兼具低密度、高导热率数和可调热膨胀系数等优点,近年来成为新一代热管理材料的研究重点。通过理论、试验及模拟三个方向对金刚石/铜复合材料进行综述。回顾金刚石/铜复合材料的发展历程,总结金刚石/铜复合材料重要的颗粒混合理论模型及“三明治”复合结构经验公式,研究影响热导率和热膨胀系数等两大热学性能指标的重要因素,简述有限元模拟在金刚石/铜复合材料中的相关应用。其中,重点分析界面改性（活性改性元素种类和改性层厚度）对金刚石/铜复合材料导热性的影响。结果表明,通过界面改性、增加接触面积以及在较高温度和压力机制驱动下制备的金刚石/铜复合材料具有优异的热物理性能。最后由所得结论提出双峰金刚石、渗碳、大尺寸金刚石自支撑膜表面织构化等方法,可用来提升金刚石/铜复合材料界面结合强度和散热性能。     

SPS制备金刚石/铜基复合材料的组织和性能

采用放电等离子烧结(SPS)方法制备了低金刚石含量的金刚石/铜基复合材料,研究了金刚石含量对复合材料的致密度、热导率、抗拉强度和伸长率等的影响。结果表明,随着金刚石含量的增加,金刚石/铜基复合材料的致密度、热导率、力学性能都先增后减。当金刚石含量为1.0%时,复合材料的抗拉强度达到221.35 MPa;在金刚石含量为1.5%时致密度达到最大值;热导率和伸长率都是在金刚石含量为2.0%时达到最大值。金刚石/铜基复合材料的断裂机制主要是韧性断裂以及增强体界面剥离。     

粉末冶金法制备金刚石/铜复合材料热导率研究

为研制更高热导率的产品,采用粉末冶金法将金刚石与高纯度铜粉热压在一起,制备新型金刚石/铜复合材料。通过正交分析法,研究了金刚石/铜复合材料热导率的影响因素。结果表明:用粉末冶金法制备的金刚石/铜复合材料,其热导率最高为245.89 W/（m·K）。对金刚石/铜复合材料热导率影响最大的因素是金刚石与铜粉的体积比,并且随着体积比的增大,金刚石/铜复合材料热导率逐渐下降。金刚石/铜复合材料的致密度以及界面结合程度是影响金刚石/铜复合材料热导率大小的重要因素,致密度高、界面结合好的复合材料热导率高,反之则低。      

热等静压制备铜金刚石复合材料

利用包套热等静压(HIP)烧结在温度900℃和压力110 MPa下烧结1 h实现了铜金刚石复合材料的制备,并对复合材料的显微结构和热学性能进行了研究。结果表明:该材料中金刚石分布均匀且未发生石墨化。随着金刚石体积分数的增大,复合材料的致密度、热导率与热膨胀系数下降。制得样品中的最高致密度和热导率分别为98.5%和305W/(m·K)~(-1)。和热压烧结(HP)及放电等离子体烧结(SPS)相比,热等静压制得的铜金刚石复合材料的热导率达到相同水平甚至更高。可见,热等静压在制备铜金刚石复合材料上具有很大潜力。     

Thermal conductivity of diamond/copper composites with a bimodal distribution of diamond particle sizes prepared by pressure infiltration method

The thermal conductivity of diamond/copper composites with bimodal particle sizes was studied.The composites were prepared through pressure infiltration of liquid copper into diamond preforms with a mixture of 40 and 100 μm-size diamonds.The permeability of the preforms with different coarse-to-fine volume ratios of diamonds was investigated.The thermal conductivity of the diamond/copper composites with bimodal size distribution was compared to the theoretical value derived from an analytical model developed by Chu.It is predicted that the diamond/copper composites could reach a higher thermal conductivity and their surface roughness could be improved by applying bimodal diamond particle sizes.     

镀钨金刚石/铜复合材料的制备及导热性能（英文）

使用热扩散法在金刚石表面镀钨,并采用不同工艺参数制备镀钨金刚石/铜复合材料,观察不同样品的微观形貌,并使用激光闪射法测量样品的热导率,探索制备高热导率金刚石/铜复合材料的最佳工艺参数。研究结果表明,在金刚石表面镀钨可以改善界面结合,当镀覆时间为60 min时,镀层完整、均匀、平整,样品的热导率达到486 W/(m·K)。镀层的完整性和均匀性比镀层厚度更为重要。进一步对镀钨金刚石进行退火处理后,镀层与金刚石之间的冶金结合增强,制备得到的复合材料的热导率提高到559 W/(m·K)。     

放电等离子烧结法制备Cu/金刚石复合材料的性能与显微组织

由于具备较高的热导率,铜/金刚石复合材料已成为应用于电子封装领域的新一代热管理材料。采用放电等离子烧结工艺（SPS）成功制备含不同金刚石体积分数的Cu/金刚石复合材料,研究复合材料的相对密度、微观结构均匀性和热导率（TC）随金刚石体积分数（50%、60%和70%）和烧结温度的变化规律。结果表明：随着金刚石体积分数的降低,复合材料的相对密度、微观结构均匀性和热导率均升高;随着烧结温度的提高,复合材料的相对密度和热导率不断提高。复合材料的热导率受到金刚石体积分数、微观结构均匀性和复合材料相对密度的综合影响。     

Low-temperature heat conduction characteristics of diamond/Cu composite by pressure infiltration method

In this paper,diamond/CuCr and diamond/CuB composites were prepared using the pressure infiltration method.The physical property measurement system(PPMS)was adopted to evaluate the thermal conductivity of diamond/Cu and MoCu composites within the range of100–350 K,and a scanning electron microscope(SEM)was utilized to analyze the microstructure and fracture appearance of the materials.The research indicates that the thermal conductivity of diamond/Cu composite within the range of100–350 K is 2.5–3.0 times that of the existing MoCu material,and the low-temperature thermal conductivity of diamond/Cu composite presents an exponential relationship with the temperature.If B element was added to a Cu matrix and a low-temperature binder was used for prefabricated elements,favorable interfacial adhesion,relatively high interfacial thermal conductivity,and favorable low-temperature heat conduction characteristics would be apparent.     

高温高压法制备金刚石/铜复合材料的研究

采用高温高压法制备金刚石/铜复合材料。研究金刚石体积分数、烧结压力、保温时间、烧结温度、金刚石表面金属化对金刚石/铜复合材料热导率及热膨胀系数的影响。实验表明:金刚石体积分数70%,烧结压力2 GPa,烧结时间300 s,烧结温度1200℃时,金刚石/铜复合材料热导率达426 W/（m·K）。      

金刚石/铜复合材料在电子封装材料领域的研究进展

金刚石/铜复合材料作为新型电子封装材料受到了广泛的关注。综述了金刚石/铜复合材料作为电子封装材料的国内外研究现状,介绍了金刚石/铜复合材料的制备工艺,并从材料科学的原理综述了该复合材料主要性能指标（热导率）的影响因素,同时对金刚石/铜复合材料的界面问题进行了分析,最后对金刚石/铜复合材料的未来应用进行了展望。     

Effect of processing parameters on the microstructure and thermal conductivity of diamond/Ag composites fabricated by spark plasma sintering

Diamond/metal composites with 50 vol.% diamond have been produced by spark plasma sintering (SPS) using pure Ag as a matrix and diamond particles as reinforcement. Three kinds of powder mixing processes were used to prepare the mixture of diamond/Ag powders: dry mixing without milling medium, wet mixing and magnetic blending. Subsequently, they were all consolidated by SPS at various processing parameters to produce bulk diamond/Ag composites. Then samples were heat treated in order to obtain a higher thermal conductivity. The effect of processing parameters on the morphologies of the mixed powders, the microstructure and the thermal conductivity of the composites were investigated by comparing the experimental data. It reveals that particles were easy to agglomerate and the distribution of mixed powders was inhomogeneous by dry mixing method, and wet mixing method is too complex. The most favorable mixing process is magnetic blending by which the powders can be homogenously mixed and the composites prepared by optimized SPS processing parameters can obtain the highest relative density and the best thermal conductivity among the composites prepared by different processes. The magnetic blending diamond/Ag composites even have a 23% increase in thermal conductivity compared with pure silver sintered by SPS.     

Effect of powder mixing process on the microstructure and thermal conductivity of Al/diamond composites fabricated by spark plasma sintering

Two powder mixing processes, mechanical mixing (MM) and mechanical alloying (MA), were used to prepare mixed Al/diamond powders, which were subsequently consolidated using spark plasma sintering (SPS) to produce bulk Al/diamond composites. The effects of the powder mixing process on the morphologies of the mixed powders, the microstructure and the thermal conductivity of the composites were investigated. The results show that the powder mixing process can significantly affect the microstructure and the thermal conductivity of the composites. Agglomerations of the particles occurred in mixed powders using MM for 30 min, which led to high pore content and weak interfacial bonding in the composites and resulted in low relative density and low thermal conductivity for the composites. Mixed powders of homogeneous distribution of diamond particles could be obtained using MA for 10 min and MM for 2 h. The composite prepared through MA indicated a high relative density but low thermal conductivity due to its defects, such as damaged particles, Fe impurity, and local interfacial debonding, which were mainly introduced in the MA process. In contrast, the composite made by MM for 2 h demonstrated high relative density and an excellent thermal conductivity of 325 W·m-1·K-1, owing to its having few defects and strong interfacial bonding.     

金刚石/铜复合材料与氧化铝陶瓷的Ag-Cu-Ti活性钎焊(英文)

金刚石/铜复合材料具有低膨胀系数和高热导率等优异性能,使其成为一种理想的电子封装材料。采用97%(72Ag-28Cu)-3%Ti活性钎料对金刚石/铜复合材料和氧化铝陶瓷进行钎焊。发现活性钎料在氧化铝陶瓷和金刚石薄膜表面均具有良好的润湿性,在两者表面的平衡润湿角均小于5°。讨论了主要钎焊条件(如钎焊温度和保温时间等)对接头性能的影响。发现钎焊过程中Ti元素聚集在金刚石颗粒的表面形成TiC化合物,且TiC化合物的形貌与钎焊接头的剪切强度具有紧密联系。推测合适的TiC化合物层厚度可改善钎焊接头的剪切强度,而颗粒状的TiC化合物及过厚的TiC化合物层却会损害钎焊接头的性能。获得的最大剪切强度为117MPa。     

Pressure infiltrated Cu/diamond composites for LED applications

Diamond reinforced copper (Cu/diamond) composites were prepared by a pressure infiltration technique.The composites show a super high conductivity of 713 W m-1 K-1 in combination with an extremely low coefficient of thermal expansion (CTE) of 7.72 × 10-6 K-1 (25-100 ℃),which are achieved by modifying the copper matrix with adding 0.3 wt.% of boron to get a good thermal contact between the matrix and the diamond particles.By adopting a series of postmachining techniques the composites were made into near-net-shape parts,and an electroless silver coating was also successfully plated on the composites.Finally,their potential applications in the thermal management of light emitting diodes (LED) were illustrated via prototype examples.