Preparation of MoS2‐Polyvinylpyrrolidone Nanocomposites for Flexible Nonvolatile Rewritable Memory Devices with Reduced Graphene Oxide Electrodes

A facile method for exfoliation and dispersion of molybdenum disulfide (MoS₂) with the aid of polyvinylpyrrolidone (PVP) is proposed. The resultant PVP‐coated MoS₂ nanosheets, i.e., MoS₂‐PVP nanocomposites, are well dispersed in the low‐boiling ethanol solvent, facilitating their thin film preparation and the device fabrication by solution processing technique. As a proof of concept, a flexible memory diode with the configuration of reduced graphene oxide (rGO)/MoS₂‐PVP/Al exhibited a typical bistable electrical switching and nonvolatile rewritable memory effect with the function of flash. These experimental results prove that the electrical transition is due to the charge trapping and detrapping behavior of MoS₂ in the PVP dielectric material. This study paves a way of employing two‐dimensional nanomaterials as both functional materials and conducting electrodes for the future flexible data storage.     

Molybdenum Disulfide Nanosheet/Quantum Dot Dynamic Memristive Structure Driven by Photoinduced Phase Transition

MoS₂ 2D nanosheets (NS) with intercalated 0D quantum dots (QDs) represent promising structures for creating low‐dimensional (LD) resistive memory devices. Nonvolatile memristors based 2D materials demonstrate low power consumption and ultrahigh density. Here, the observation of a photoinduced phase transition in the 2D NS/0D QDs MoS₂ structure providing dynamic resistive memory is reported. The resistive switching of the MoS₂ NS/QD structure is observed in an electric field and can be controlled through local QD excitations. Photoexcitation of the LD structure at different laser power densities leads to a reversible MoS₂ 2H‐1T phase transition and demonstrates the potential of the LD structure for implementing a new dynamic ultrafast photoresistive memory. The dynamic LD photomemristive structure is attractive for real‐time pattern recognition and photoconfiguration of artificial neural networks in a wide spectral range of sensitivity provided by QDs.     

Flexible Nonvolatile Transistor Memory with Solution‐Processed Transition Metal Dichalcogenides

Nonvolatile field‐effect transistor (FET) memories containing transition metal dichalcogenide (TMD) nanosheets have been recently developed with great interest by utilizing some of the intriguing photoelectronic properties of TMDs. The TMD nanosheets are, however, employed as semiconducting channels in most of the memories, and only a few works address their function as floating gates. Here, a floating‐gate organic‐FET memory with an all‐in‐one floating‐gate/tunneling layer of the solution‐processed TMD nanosheets is demonstrated. Molybdenum disulfide (MoS₂) is efficiently liquid‐exfoliated by amine‐terminated polystyrene with a controlled amount of MoS₂ nanosheets in an all‐in‐one floating‐gate/tunneling layer, allowing for systematic investigation of concentration‐dependent charge‐trapping and detrapping properties of MoS₂ nanosheets. At an optimized condition, the nonvolatile memory exhibits memory performances with an ON/OFF ratio greater than 10⁴, a program/erase endurance cycle over 400 times, and data retention longer than 7 × 10³ s. All‐in‐one floating‐gate/tunneling layers containing molybdenum diselenide and tungsten disulfide are also developed. Furthermore, a mechanically‐flexible TMD memory on a plastic substrate shows a performance comparable with that on a hard substrate, and the memory properties are rarely altered after outer‐bending events over 500 times at the bending radius of 4.0 mm.     

Surface Engineering of MoS2 via Laser‐Induced Exfoliation in Protic Solvents

With excellent performance in the hydrogen evolution reaction (HER), molybdenum disulfide (MoS₂) is considered a promising nonprecious candidate to substitute Pt‐based catalysts. Herein, pulsed laser irradiation in liquid is used to realize one‐step exfoliation of bulk 2H‐MoS₂ to ultrastable few‐layer MoS₂ nanosheets. Such prepared MoS₂ nanosheets are rich in S vacancies and metallic 1T phase, which significantly contribute to the boosted catalytic HER activity. Protic solvents play a pivotal role in the production of S vacancies and 2H‐to‐1T phase transition under laser irradiation. MoS₂ exfoliated in an optimal solvent of formic acid exhibits outstanding HER activity with an overpotential of 180 mV at 10 mA cm^?2 and Tafel slope of 54 mV dec^?1.     

Aligned Heterointerface‐Induced 1T‐MoS2 Monolayer with Near‐Ideal Gibbs Free for Stable Hydrogen Evolution Reaction

1T‐phase molybdenum disulfide (1T‐MoS₂) exhibits superior hydrogen evolution reaction (HER) over 2H‐phase MoS₂ (2H‐MoS₂). However, its thermodynamic instability is the main drawback impeding its practical application. In this work, a stable 1T‐MoS₂ monolayer formed at edge‐aligned 2H‐MoS₂ and a reduced graphene oxide heterointerface (EA‐2H/1T/RGO) using a precursor‐in‐solvent synthesis strategy are reported. Theoretical prediction indicates that the edge‐aligned layer stacking can induce heterointerfacial charge transfer, which results in a phase transition of the interfacial monolayer from 2H to 1T that realizes thermodynamic stability based on the adhesion energy between MoS₂ and graphene. As an electrocatalyst for HER, EA‐2H/1T/RGO displays an onset potential of ?103 mV versus RHE, a Tafel slope of 46 mV dec^?1 and 10 h stability in acidic electrolyte. The unexpected activity of EA‐2H/1T/RGO beyond 1T‐MoS₂ is due to an inherent defect caused by the gliding of S atoms during the phase transition from 2H to 1T, leading the Gibbs free energy of hydrogen adsorption (ΔG_H*) to decrease from 0.13 to 0.07 eV, which is closest to the ideal value (0.06 eV) of 2H‐MoS₂. The presented work provides fundamental insights into the impressive electrochemical properties of HER and opens new avenues for phase transitions at 2D/2D hybrid interfaces.     

High Phase Purity of Large‐Sized 1T′‐MoS2 Monolayers with 2D Superconductivity

The development of transition metal dichalcogenides has greatly accelerated research in the 2D realm, especially for layered MoS₂. Crucially, the metallic MoS₂ monolayer is an ideal platform in which novel topological electronic states can emerge and also exhibits excellent energy conversion and storage properties. However, as its intrinsic metallic phase, little is known about the nature of 2D 1T′‐MoS₂, probably because of limited phase uniformity (<80%) and lateral size (usually <1 µm) in produced materials. Herein, solution processing to realize high phase‐purity 1T′‐MoS₂ monolayers with large lateral size is demonstrated. Direct chemical exfoliation of millimeter‐sized 1T′ crystal is introduced to successfully produce a high‐yield of 1T′‐MoS₂ monolayers with over 97% phase purity and unprecedentedly large size up to tens of micrometers. Furthermore, the large‐sized and high‐quality 1T′‐MoS₂ nanosheets exhibit clear intrinsic superconductivity among all thicknesses down to monolayer, accompanied by a slow drop of transition temperature from 6.1 to 3.0 K. Prominently, unconventional superconducting behavior with upper critical field far beyond the Pauli limit is observed in the centrosymmetric 1T′‐MoS₂ structure. The results open up an ideal approach to explore the properties of 2D metastable polymorphic materials.     

Engineering 2D Metal–Organic Framework/MoS2 Interface for Enhanced Alkaline Hydrogen Evolution

2D metal–organic frameworks (MOFs) have been widely investigated for electrocatalysis because of their unique characteristics such as large specific surface area, tunable structures, and enhanced conductivity. However, most of the works are focused on oxygen evolution reaction. There are very limited numbers of reports on MOFs for hydrogen evolution reaction (HER), and generally these reported MOFs suffer from unsatisfactory HER activities. In this contribution, novel 2D Co‐BDC/MoS₂ (BDC stands for 1,4‐benzenedicarboxylate, C₈H₄O₄) hybrid nanosheets are synthesized via a facile sonication‐assisted solution strategy. The introduction of Co‐BDC induces a partial phase transfer from semiconducting 2H‐MoS₂ to metallic 1T‐MoS₂. Compared with 2H‐MoS₂, 1T‐MoS₂ can activate the inert basal plane to provide more catalytic active sites, which contributes significantly to improving HER activity. The well‐designed Co‐BDC/MoS₂ interface is vital for alkaline HER, as Co‐BDC makes it possible to speed up the sluggish water dissociation (rate‐limiting step for alkaline HER), and modified MoS₂ is favorable for the subsequent hydrogen generation step. As expected, the resultant 2D Co‐BDC/MoS₂ hybrid nanosheets demonstrate remarkable catalytic activity and good stability toward alkaline HER, outperforming those of bare Co‐BDC, MoS₂, and almost all the previously reported MOF‐based electrocatalysts.     

Hybrid Flexible Resistive Random Access Memory‐Gated Transistor for Novel Nonvolatile Data Storage

Here, a single‐device demonstration of novel hybrid architecture is reported to achieve programmable transistor nodes which have analogies to flash memory by incorporating a resistive switching random access memory (RRAM) device as a resistive switch gate for field effect transistor (FET) on a flexible substrate. A high performance flexible RRAM with a three‐layered structure is fabricated by utilizing solution‐processed MoS₂ nanosheets sandwiched between poly(methyl methacrylate) polymer layers. Gate coupling with the pentacene‐based transistor can be controlled by the RRAM memory state to produce a nonprogrammed state (inactive) and a programmed state (active) with a well‐defined memory window. Compared to the reference flash memory device based on the MoS₂ floating gate, the hybrid device presents robust access speed and retention ability. Furthermore, the hybrid RRAM‐gated FET is used to build an integrated logic circuit and a wide logic window in inverter logic is achieved. The controllable, well‐defined memory window, long retention time, and fast access speed of this novel hybrid device may open up new possibilities of realizing fully functional nonvolatile memory for high‐performance flexible electronics.     

3D 1T‐MoS2/CoS2 Heterostructure via Interface Engineering for Ultrafast Hydrogen Evolution Reaction

Metallic phase (1T) MoS₂ has been regarded as an appealing material for hydrogen evolution reaction. In this work, a novel interface‐induced strategy is reported to achieve stable and high‐percentage 1T MoS₂ through highly active 1T‐MoS₂/CoS₂ hetero‐nanostructure. Herein, a large number of heterointerfaces can be obtained by interlinked 1T‐MoS₂ and CoS₂ nanosheets in situ grown from the molybdate cobalt oxide nanorod under moderate conditions. Owing to the strong interaction between MoS₂ and CoS₂, high‐percentage of metallic‐phase (1T) MoS₂ of 76.6% can be achieved, leading to high electroconductivity and abundant active sites compared to 2H MoS₂. Furthermore, the interlinked MoS₂ and CoS₂ nanosheets can effectively disperse the nanosheets so as to enlarge the exposed active surface area. The near zero free energy of hydrogen adsorption at the heterointerface can also be achieved, indicating the fast kinetics and excellent catalytic activity induced by heterojunction. Therefore, when applied in hydrogen evolution reaction (HER), 1T‐MoS₂/CoS₂ heterostructure delivers low overpotential of 71 and 26 mV at the current density of 10 mA cm^?2 with low Tafel slops of 60 and 43 mV dec^?1, respectively in alkaline and acidic conditions.     

Na‐Cation‐Assisted Exfoliation of MX2 (M = Mo,W; X = S,Se) Nanosheets in an Aqueous Medium with the Aid of a Polymeric Surfactant for Flexible Polymer‐Nanocomposite Memory Applications

2D nanosheets of transition metal dichalcogenides (TMDCs) have been attracting attention due to their sizable band gap. Facile and effective Na‐cation‐assisted exfoliation of TMDC (MX₂, M = Mo, W; X = S, Se) nanosheets in an aqueous medium and their application as a composite filler in a polyvinyl alcohol (PVA) matrix are explored in this work. The presence of Na cations is highly beneficial for exfoliating defect‐free and few‐layer MX₂ nanosheets in water in the presence of small‐sized micelles of polymeric surfactant, and significantly elevates the exfoliation yield by more than one order of magnitude compared to a conventional surfactant‐assisted exfoliation. The strategy suggested in this work is very advantageous compared to both Li cation intercalation in organic solvents and conventional low‐yield surfactant‐assisted exfoliations. As an application of the exfoliated nanosheets, the fabrication of memory devices with the configuration of Ga‐doped ZnO/MX₂–PVA/Ag is demonstrated, and they exhibit bistable and write‐once‐read‐many‐times resistive switching behavior with a high ON/OFF current ratio of 3 × 10³ at ?1.0 V (for WS₂) and 2.0 V (for MoS₂). Furthermore, MX₂–PVA nanocomposite fibrous films and mats are successfully fabricated using an electrospinning technique, which can expand the use of TMDC nanofillers in applications involving highly flexible polymer‐based MX₂ composites.     

Nonvolatile flexible organic bistable devices fabricated utilizing CdSe/ZnS nanoparticles embedded in a conducting poly N-vinylcarbazole polymer layer

The bistable effects of CdSe/ZnS nanoparticles embedded in a conducting poly N-vinylcarbazole (PVK) polymer layer by using flexible poly-vinylidene difluoride (PVDF) and polyethylene terephthalate (PET) substrates were investigated. Transmission electron microscopy (TEM) images revealed that CdSe/ZnS nanoparticles were formed inside the PVK polymer layer. Current-voltage (I-V) measurement on the Al/[CdSe/ZnS?nanoparticles+?PVK]/ITO/PVDF and Al/[CdSe/ZnS nanoparticles+?PVK ]/ITO/PET structures at 300?K showed a nonvolatile electrical bistability behavior with a flat-band voltage shift due to the existence of the CdSe/ZnS nanoparticles, indicative of trapping, storing and emission of charges in the electronic states of the CdSe nanoparticles. A bistable behavior for the fabricated organic bistable device (OBD) structures is described on the basis of the I-V results. These results indicate that OBDs fabricated by embedding inorganic CdSe/ZnS nanoparticles in a conducting polymer matrix on flexible substrates are prospects for potential applications in flexible nonvolatile flash memory devices.     

Novel SiQDs–MoS<Subscript>2</Subscript> heterostructures with increasing solar absorption for the photocatalytic degradation of malachite green

Novel heterostructures based on silicon quantum dots and molybdenum disulfide nanosheets (SiQDs–MoS₂) were synthesized by a hydrothermal method, in which the introduced SiQDs play a determining role in manipulating the morphology, phase and band structure of MoS₂. The resultant SiQDs–MoS₂ is uniform flowerlike 3D microspheres assembled from petallike 2D MoS₂ nanosheets anchored with 0D SiQDs, possessing abundant active sites. Besides, the primary MoS₂ nanosheets consist of both semiconductive 2H and metallic 1T phases accompanied with intralayer mesopores and expanded interlayer spacing, endowing the resulting architectures with effective electron transfer. Significantly, the as-synthesized SiQDs–MoS₂ exhibits intense full solar-spectrum absorption, indicating efficient solar energy harvesting. First-principles calculations simulate similar increased spectral absorption of monolayer MoS₂ adhered with a Si cluster, suggesting the existence of new energy states associated with the integration of SiQDs and MoS₂ nanosheets as evidenced by photoluminescence (PL) spectral analysis. As expected, the current SiQDs–MoS₂ heterostructures demonstrate substantial photocatalytic activity even under visible and near-infrared (NIR) light on degradation of malachite green (MG). The type II electronic structure of SiQDs–MoS₂ was proposed, enabling sufficient photogenerated electrons and holes for the photocatalytic reactions. This study may establish a new frontier on the rational design and feasible development of the hybrid structures with the desirable morphologies, phase compositions and band structures for the catalysis and beyond.     

Glucose‐Induced Synthesis of 1T‐MoS2/C Hybrid for High‐Rate Lithium‐Ion Batteries

1T phase MoS₂ possesses higher conductivity than the 2H phase, which is a key parameter of electrochemical performance for lithium ion batteries (LIBs). Herein, a 1T‐MoS₂/C hybrid is successfully synthesized through facile hydrothermal method with a proper glucose additive. The synthesized hybrid material is composed of smaller and fewer‐layer 1T‐MoS₂ nanosheets covered by thin carbon layers with an enlarged interlayer spacing of 0.94 nm. When it is used as an anode material for LIBs, the enlarged interlayer spacing facilitates rapid intercalating and deintercalating of lithium ions and accommodates volume change during cycling. The high intrinsic conductivity of 1T‐MoS₂ also contributes to a faster transfer of lithium ions and electrons. Moreover, much smaller and fewer‐layer nanosheets can shorten the diffusion path of lithium ions and accelerate reaction kinetics, leading to an improved electrochemical performance. It delivers a high initial capacity of 920.6 mAh g^?1 at 1 A g^?1 and the capacity can maintain 870 mAh g^?1 even after 300 cycles, showing a superior cycling stability. The electrode presents a high rate performance as well with a reversible capacity of 600 mAh g^?1 at 10 A g^?1. These results show that the 1T‐MoS₂/C hybrid shows potential for use in high‐performance lithium‐ion batteries.     

A General Method for the Chemical Synthesis of Large‐Scale,Seamless Transition Metal Dichalcogenide Electronics

The capability to directly build atomically thin transition metal dichalcogenide (TMD) devices by chemical synthesis offers important opportunities to achieve large‐scale electronics and optoelectronics with seamless interfaces. Here, a general approach for the chemical synthesis of a variety of TMD (e.g., MoS₂, WS₂, and MoSe₂) device arrays over large areas is reported. During chemical vapor deposition, semiconducting TMD channels and metallic TMD/carbon nanotube (CNT) hybrid electrodes are simultaneously formed on CNT‐patterned substrate, and then coalesce into seamless devices. Chemically synthesized TMD devices exhibit attractive electrical and mechanical properties. It is demonstrated that chemically synthesized MoS₂–MoS₂/CNT devices have Ohmic contacts between MoS₂/CNT hybrid electrodes and MoS₂ channels. In addition, MoS₂–MoS₂/CNT devices show greatly enhanced mechanical stability and photoresponsivity compared with conventional gold‐contacted devices, which makes them suitable for flexible optoelectronics. Accordingly, a highly flexible pixel array based on chemically synthesized MoS₂–MoS₂/CNT photodetectors is applied for image sensing.     

Giant Enhancements of Perpendicular Magnetic Anisotropy and Spin‐Orbit Torque by a MoS2 Layer

2D transition metal dichalcogenides have attracted much attention in the field of spintronics due to their rich spin‐dependent properties. The promise of highly compact and low‐energy‐consumption spin‐orbit torque (SOT) devices motivates the search for structures and materials that can satisfy the requirements of giant perpendicular magnetic anisotropy (PMA) and large SOT simultaneously in SOT‐based magnetic memory. Here, it is demonstrated that PMA and SOT in a heavy metal/transition metal ferromagnet structure, Pt/[Co/Ni]₂, can be greatly enhanced by introducing a molybdenum disulfide (MoS₂) underlayer. According to first‐principles calculation and X‐ray absorption spectroscopy (XAS), the enhancement of the PMA is ascribed to the modification of the orbital hybridization at the interface of Pt/Co due to MoS₂. The enhancement of SOT by the role played by MoS₂ is explained, which is strongly supported by the identical behavior of SOT and PMA as a function of Pt thickness. This work provides new possibilities to integrate 2D materials into promising spintronics devices.     

Charge‐Trap Memory Based on Hybrid 0D Quantum Dot–2D WSe2 Structure

Recently, layered ultrathin 2D semiconductors, such as MoS₂ and WSe₂ are widely studied in nonvolatile memories because of their excellent electronic properties. Additionally, discrete 0D metallic nanocrystals and quantum dots (QDs) are considered to be outstanding charge‐trap materials. Here, a charge‐trap memory device based on a hybrid 0D CdSe QD–2D WSe₂ structure is demonstrated. Specifically, ultrathin WSe₂ is employed as the channel of the memory, and the QDs serve as the charge‐trap layer. This device shows a large memory window exceeding 18 V, a high erase/program current ratio (reaching up to 10⁴), four‐level data storage ability, stable retention property, and high endurance of more than 400 cycles. Moreover, comparative experiments are carried out to prove that the charges are trapped by the QDs embedded in the Al₂O₃. The combination of 2D semiconductors with 0D QDs opens up a novelty field of charge‐trap memory devices.     

Polarized Light‐Emitting Diodes Based on Patterned MoS2 Nanosheet Hole Transport Layer

Here, this study successfully fabricates few‐layer MoS₂ nanosheets from (NH₄)₂MoS₄ and applies them as the hole transport layer as well as the template for highly polarized organic light‐emitting diodes (OLEDs). The obtained material consists of polycrystalline MoS₂ nanosheets with thicknesses of 2 nm. The MoS₂ nanosheets are patterned by rubbing/ion‐beam treatment. The Raman spectra shows that {poly(9,9‐dioctylfluorene‐alt‐benzothiadiazole), poly[(9,9‐di‐n‐octylfluorenyl‐2,7‐diyl)‐alt‐(benzo[2,1,3]thiadiazol‐4,8‐diyl)]} (F8BT) on patterned MoS₂ exhibits distinctive polarization behavior. It is discovered that patterned MoS₂ not only improves the device efficiency but also changes the polarization behavior of the devices owing to the alignment of F8BT. This work demonstrates a highly efficient polarized OLED with a polarization ratio of 62.5:1 in the emission spectrum (166.7:1 at the peak intensity of 540 nm), which meets the manufacturing requirement. In addition, the use of patterned MoS₂ nanosheets not only tunes the polarization of the OLEDs but also dramatically improves the device performance as compared with that of devices using untreated MoS₂.     

Hierarchical MoS2 Nanosheet@TiO2 Nanotube Array Composites with Enhanced Photocatalytic and Photocurrent Performances

A novel type of hierarchical nanocomposites consisted of MoS₂ nanosheet coating on the self‐ordered TiO₂ nanotube arrays is successfully prepared by a facile combination of anodization and hydrothermal methods. The MoS₂ nanosheets are uniformly decorated on the tube top surface and the intertubular voids with film appearance changing from brown to black color. Anatase TiO₂ nanotube arrays (NTAs) with clean top surfaces and the appropriate amount of MoS₂ precursors are key to the growth of perfect compositing TiO₂@MoS₂ hybrids with significantly enhanced photocatalytic activity and photocurrent response. These results reveal that the strategy provides a flexible and straightforward route for design and preparation nanocomposites based on functional semiconducting nanostructures with 1D self‐ordered TiO₂ NTAs, promising for new opportunities in energy/environment applications, including photocatalysts and other photovoltaic devices.     

17% Efficient Organic Solar Cells Based on Liquid Exfoliated WS2 as a Replacement for PEDOT:PSS

The application of liquid‐exfoliated 2D transition metal disulfides (TMDs) as the hole transport layers (HTLs) in nonfullerene‐based organic solar cells is reported. It is shown that solution processing of few‐layer WS₂ or MoS₂ suspensions directly onto transparent indium tin oxide (ITO) electrodes changes their work function without the need for any further treatment. HTLs comprising WS₂ are found to exhibit higher uniformity on ITO than those of MoS₂ and consistently yield solar cells with superior power conversion efficiency (PCE), improved fill factor (FF), enhanced short‐circuit current (J_SC), and lower series resistance than devices based on poly(3,4‐ethylenedioxythiophene):poly(styrenesulfonate) and MoS₂. Cells based on the ternary bulk‐heterojunction PBDB‐T‐2F:Y6:PC₇₁BM with WS₂ as the HTL exhibit the highest PCE of 17%, with an FF of 78%, open‐circuit voltage of 0.84 V, and a J_SC of 26 mA cm^?2. Analysis of the cells' optical and carrier recombination characteristics indicates that the enhanced performance is most likely attributed to a combination of favorable photonic structure and reduced bimolecular recombination losses in WS₂‐based cells. The achieved PCE is the highest reported to date for organic solar cells comprised of 2D charge transport interlayers and highlights the potential of TMDs as inexpensive HTLs for high‐efficiency organic photovoltaics.     

Strong Charge Transfer at 2H–1T Phase Boundary of MoS2 for Superb High‐Performance Energy Storage

Transition metal dichalcogenides exhibit several different phases (e.g., semiconducting 2H, metallic 1T, 1T′) arising from the collective and sluggish atomic displacements rooted in the charge‐lattice interaction. The coexistence of multiphase in a single sheet enables ubiquitous heterophase and inhomogeneous charge distribution. Herein, by combining the first‐principles calculations and experimental investigations, a strong charge transfer ability at the heterophase boundary of molybdenum disulfide (MoS₂) assembled together with graphene is reported. By modulating the phase composition in MoS₂, the performance of the nanohybrid for energy storage can be modulated, whereby remarkable gravimetric and volumetric capacitances of 272 F g^?1 and 685 F cm^?3 are demonstrated. As a proof of concept for energy application, a flexible solid‐state asymmetric supercapacitor is constructed with the MoS₂‐graphene heterolayers, which shows superb energy and power densities (46.3 mWh cm^?3 and 3.013 W cm^?3, respectively). The present work demonstrates a new pathway for efficient charge flow and application in energy storage by engineering the phase boundary and interface in 2D materials of transition metal dichalcogenides.