High-power and high-speed semi-insulating BH structure monolithic electroabsorption modulator/DFB laser light source

By the use of a semi-insulating BH structure the authors have obtained a high-performance monolithic electroabsorption modulator/DFB laser light source having a bandwidth of 10.3 GHz and an output power of 17 mW. The chirp was only 0.1 AA under 10 Gbit/s NRZ modulation.<>     

λ/4-shifted DFB laser/electroabsorption modulator integratedlight source for multigigabit transmission

High-speed, low-chirp, and low voltage driving characteristics of 1.55-μm λ/4-shifted distributed-feedback (DFB) laser/InGaAsP electroabsorption modulator integrated light sources are reported. By optimization of the composition and thickness of the modulator waveguide, the driving voltage for a 10-dB extinction ratio was reduced to 1.4-3 V, depending on the modulator length in the range of 240-125 μm. High-speed modulation up to 10-Gb/s NRZ modulation was achieved by the integrated device with a 125-μm modulator length. The linewidth enhancement factor of the integrated modulator was estimated to be 0.15-0.48     

Design rules for a low-chirp integrated DFB laser with an electroabsorption modulator

Feedback from the front facet of an integrated DFB laser with an electroabsorption modulator generates additional chirp to the single modulator. The reduction of the sensitivity to that feedback is in tradeoff relation with the external differential quantum efficiency and the single-mode yield. We introduce a figure-of-merit for the feedback sensitivity. It is obtained from the modeling of the small signal frequency modulation (FM). It indicates design rules for low-chirp and high-efficiency devices.     

A 10-Gb/s optical transmitter module with a monolithicallyintegrated electroabsorption modulator with a DFB laser

A compact 10-Gb/s optical transmitter module with small-chirp output was developed by using a monolithically integrated electroabsorption modulator with a distributed-feedback laser. This module can be operated at a bit rate of more than 10 Gb/s at 1.55 μm, and shows a high modulated output power of ~1 dBm with a low optical coupling loss of 3.2 dB between chip and fiber. A multifunctional and compact optical isolator with a monitor photodiode was also developed to decrease noise     

Integrated electroabsorption modulator/DBR laser linearized by RFcurrent modulation

We measure the two-tone intermodulation distortion of an electroabsorption modulator integrated with a DBR laser. Driving the modulator with an ac current yields a significant improvement in linearity over conventional voltage modulation at RF frequencies up to 10 MHz with more than 13 dBc reduction in the minimum distortion values at 0.5 MHz. High-frequency performance is presently limited by the capacitance loading the current drive     

NRZ operation at 40 Gb/s of a compact module containing an MQW electroabsorption modulator integrated with a DFB laser

NRZ operation at 40 Gb/s has been successfully performed using a very compact module of a multiple-quantum-well (MQW) electroabsorption modulator integrated with a distributed-feedback (DFB) laser. While the DFB laser is injected with a constant current, the integrated MQW electroabsorption modulator is driven with a 10-Gb/s electrical NRZ signal. A clearly opened eye diagram has been observed in the modulated light from the modulator. And a receiver sensitivity of -27.2 dBm at 10/sup -9/ has been experimentally confirmed in the bit-error-rate (BER) performance.     

DFB laser with attached external intensity modulator

A theoretical study is made of the frequency pulling effect exerted on a distributed feedback (DFB) laser by an external amplitude modulator that is directly attached to it. The modulator consists of a piece of waveguide whose loss is modulated by means of an externally applied voltage. The modulator affects the laser due to residual reflections from its far end which appear as a variable effective reflectivity to the output end of the DFB laser. Modulation affects the magnitude as well as the phase of the effective reflection coefficient presented to the laser due to the coupling of the real and imaginary parts of the effective refractive index of the modulator waveguide. The tuning problem is formulated as an eigenvalue equation for the DFB laser in the presence of an externally attached lossy cavity     

Integrated 1.3-/spl mu/m DFB laser electroabsorption modulator based on identical MQW double-stack active layer with 25-GHz modulation performance

1.31-/spl mu/m electroabsorption modulators monolithically integrated with a DFB laser diode have been realized using an identical InGaAsP-InP multiple quantum-well-layer structure composed of two different QW types. Low laser threshold currents <13 mA and high 3-dBe cutoff frequency up to /spl sim/25 GHz have been measured.     

4.5 Gbit/s modelocked extended-cavity laser with a monolithically integrated electroabsorption modulator

An electroabsorption modulator has been monolithically integrated with an extended-cavity laser, which incorporates a Bragg reflector. Actively modelocked at the fundamental cavity resonance frequency of 4.5 GHz, the laser provides a train of 6.3 ps pulses with a centre wavelength of 1544 nm onto which data is encoded by the modulator. This 4.5 Gbit/s single-chip transmitter is suitable for systems employing short optical pulses.<>     

High-power ultralow-chirp 10-Gb/s electroabsorption modulator integrated laser with ultrashort photocarrier lifetime

A high-power, ultralow-chirp electroabsorption modulator (EAM) integrated with a distributed-feedback laser diode (EML) having ultrashort lifetime of photogenerated holes in the EAM quantum-well (QW) structure is reported for the first time. A shallow QW structure having a small valence band offset to enhance the sweepout of photogenerated holes was employed as EAM absorption layer. The measured hole lifetimes were 7-11 ps, and the measured frequency chirp (/spl alpha/-parameter) was low or negative at low EAM reverse bias voltages even under high optical output power conditions. Successful 10-Gb/s 80-km normal-dispersion single-mode fiber transmission (chromatic dispersion D=1600 ps/nm) and the record average fiber optical output power (P/sub f/) of +5.3 dBm were achieved at 25/spl deg/C. In addition, semicooled operation of EML at enhanced bit rates has been demonstrated for application in small-form-factor protocol-agnostic optical transceivers. A 10.7-Gb/s 1600-ps/nm transmission was achieved at 45/spl deg/C and P/sub f/=+3.0 dBm.     

电吸收调制器特性研究

针对电吸收调制器在光纤无线通信系统中的重要作用,分析了电吸收调制器的插入损耗和由电吸收调制器组成的光纤无线通信系统的误码率和噪声系数。发现在波长从1530~1570nm范围内插入损耗都比较小;在工作波长为1550nm的通信系统内实现了速率为2.5Gb/s信号在200km长度的标准光纤内传输。系统功率衰减很小,在选择合适的匹配阻抗下,通信系统噪声系数能够达到12dB左右。     

Chirp characteristics of 10-Gb/s electroabsorption modulatorintegrated DFB lasers

We present a complete large-signal dynamic model of electroabsorption modulator integrated (EAMI) distributed feedback (DFB) lasers using the time-dependent transfer matrix method. With this model, it is possible to analyze dynamic characteristics depending on optical feedback and spatial hole burning. Also, we can separately calculate the laser and modulator chirp including the voltage-dependent modulator chirp parameter, the grating phase at the end of the laser section, the length of the waveguide region, and electrical coupling. Therefore, our model can provide better predictions regarding the laser and modulator chirp. The calculated large-signal chirp using our model has similar characteristics to the measured large-signal chirp for 10-Gb/s EAMI-DFB lasers     

Monolithic integration of InGaAsP/InP distributed feedback laser and electroabsorption modulator by vapor phase epitaxy

Monolithic integration of a 1.55-μm InGaAsP/InP distributed feedback (DFB) laser and an electroabsorption (EA) modulator was studied. The difference between the lasing photon energy and the bandgap energy of the modulator waveguide was designed to be 30-40 meV, taking into account the linewidth-enhancement factor and the zero-bias absorption loss. The integrated devices were grown by three-step vapor phase epitaxy (VPE). The CW threshold current at 20°C of the DFB laser part with a buried heterostructure was 30-60 mA and the breakdown voltage of the modulator part with a strip-loaded stripe geometry was 20-40 V, and these values indicated satisfactory crystal quality in the VPE epitaxial layers. The operating voltage of the modulator to give on:off ratios of 10:1 and 100:1 was 1.5- 4 V and 2.5-6.5 V, respectively, depending on the length in the range200-500 mum. A 3-dB bandwidth of about 2.5 GHz and a linewidth-enhancement factor of about 1.6 were obtained for the integrated modulator.     

High-frequency InGaAs/InP multiple-quantum-well buried-mesa electroabsorption optical modulator

We describe the structure and performance characteristics of an InGaAs/InP multiple-quantum-well (MQW) electro-absorption buried-mesa optical modulator. The device is fabricated with two metal-organic chemical-vapour-deposition (MOCVD) growth steps, wherein small-area circular (40?m diameter) PIN diodes are buried with Fe-doped semiinsulating (SI) InP regrowth. The modulator has a relatively low insertion loss (4.5 dB) with 25% modulation depth and very high modulation bandwith (5.3 GHz) operating at 1.62?m wavelength.     

Pulse width tunable subpicosecond pulse generation from an activelymodelocked monolithic MQW laser/MQW electroabsorption modulator

Actively modelocked pulses are generated from a 1.59 μm MQW laser integrated with an MQW electroabsorption modulator driven at the monolithic cavity frequency. The pulse width is controlled from 39 ps to 0.55 ps by changing the inverse bias voltage applied to the electroabsorption modulator and by linear pulse compression using a fibre     

Demonstration of negative chirp characteristics over wide wavelength range using monolithically integrated SG-DBR laser/electroabsorption modulator

For the first time negative large signal chirp characteristics from a widely-tunable laser/electroabsorption modulator transmitter are reported. This device employed an intermixed quantum well absorption region in the modulator. Large signal time resolved chirp measurements were made at wavelengths from 1542 to 1569 nm and were shown to exhibit negative characteristics at all wavelengths.     

An improved approach of optical loss measurement using photocurrent and optical transmission in an electroabsorption modulator

We report an improved method to extract the optical absorption coefficient of a semiconductor electroabsorption modulator. Only the transmission and photocurrent data are needed with this method. The method makes it possible to obtain the optical coupling efficiency between laser and modulator, photocurrent conversion efficiency, and optical absorption coefficients from experimental data.     

Actively mode-locked 1.5-μm 10-GHz picosecond fiber laser usinga monolithic semiconductor optical amplifier/electroabsorption modulator

In this letter, we demonstrate a novel 10-GHz actively modelocked polarization-maintaining fiber ring laser that utilizes a single device for gain, loss modulation, optical isolation, and repetition rate adjustment. This monolithic device incorporates a semiconductor optical amplifier with an electroabsorption modulator and provides net gain of 2.1 dB. The repetition rate of the 1.5-μm picosecond pulsetrains can be tuned by 2 ppm through perturbation of the electroabsorption modulator reverse bias     

20 Gbit/s chirped return-to-zero transmitter with simplifiedconfiguration using electroabsorption modulator

A novel chirped return-to-zero transmitter with a simplified configuration that uses an electro-absorption modulator is proposed. Using this transmitter, high fibre input power is achieved (up to +14 dbm) in repeaterless 20 Gbit/s transmission over standard singlemode fibres     

Optical transmitter module with hybrid integration of DFB laser diode and proton-exchanged LiNbO3 modulator chip

In this work, a hybrid integrated optical transmitter module was designed and fabricated. A proton-exchanged Mach–Zehnder lithium niobate (LiNbO₃) modulator chip was chosen to enhance the output extinction ratio. A fiber was used to adjust the rotation of the polarization direction caused by the optical isolator. The whole optical path structure, including the laser chip, lens, fiber, and modulator chip, was simulated to achieve high optical output efficiency. After a series of process improvements, a module with an output extinction ratio of 34 dB and a bandwidth of 20.5 GHz (from 2 GHz) was obtained. The optical output efficiency of the whole module reached approximately 21%. The link performance of the module was also measured.