基于PVDF的高压电性薄膜制备工艺研究

针对国内的聚偏二氟乙烯(PVDF)压电传感器仅限于实验室阶段,仍需要大量进口的现状,通过对PVDF压电特性分析,结合传感器产品的结构,进行PVDF压电传感器的制备工艺的研究。对工艺过程中的初始薄膜制备、单轴拉伸、高压极化和磁控溅射等主要工艺进行制备工艺参数的探索,获得了PVDF压电敏感薄膜,并采用聚酰亚胺材料进行封装,得到PVDF压电传感器。对该传感器进行关键参数静态压电系数d_(33)的测试,结果为13.1PC/N,获得了满足实际工程使用的PVDF压电传感器产品。     

基于ANSYS的埋入混凝土中压电陶瓷谐振频率分析

基于ANSYS研究压电陶瓷(PZT-5H)的振动模态,结合谐响应算法得出压电陶瓷3个不同区域的应变-频率曲线,并将压电陶瓷和混凝土单元耦合,实现了压电埋入式混凝土机敏模块的电-声系统声压云图仿真,得到了不同激励频率下的最大声压和声场分布。结果表明压电陶瓷在20 kHz~100 kHz频段内有4个振幅极大值频率点,随着谐振频率的增加,振幅逐渐增加,而振动分布呈先集中后分散的变化趋势;通过谐响应分析发现压电陶瓷声辐射面不同区域最大应变频率均在80kHz附近;由电-声系统的声场分析发现压电陶瓷的激励频率为79.666 kHz时声压最大、声场分布最优、声指向性集中。     

PVDF压电薄膜制作传感器的理论研究

用PVDF压电薄膜设计传感器是近年来在传感器领域研究的一个新热点,通过对PVDF压电薄膜的压电性能的分析,根据弹性力学的薄板理论和压电效应的物态方程,导出PVDF压电薄膜的传感方程,并对偏转角口的情况进行了讨论;为用PVDF压电薄膜制作传感器提供理论基础。     

利用PVDF压电膜设计声辐射模态传感器

提出了一种新的聚偏氟乙烯(PVDF)压电传感器的设计方法测量板的前2阶声辐射模态伴随系数。结果表明:在中低频率,测量第一阶声辐射模态伴随系数,只需要在板布置两条PVDF传感器即可;测量第二阶声辐射模态伴随系数,可在板上布置多条传感器能得到比较精确的结果。同时,传感器测量的结果与理论相符,说明这种新型PVDF传感器的设计是可行的。     

基于磁致伸缩效应的声表面波电流传感器敏感机理分析

为实现高灵敏度、低温漂的高性能电流传感器,提出将声表面波技术与磁致伸缩效应相结合的电流检测方法,分析了其敏感机理并改善其温度特性.这种声表面波电流传感器采用128°YX-LiNbO3作为压电基片,表面覆盖SiO2薄膜来改善器件温度稳定性,并溅射超磁致伸缩TbDyFe薄膜以响应电流.在电流作用下,TbDyFe薄膜会发生磁致伸缩效应和ΔE效应,引起声表面波相速度的改变.结合层状介质中声传播理论,分析了给定电流下层状结构中声表面波的传播特性,特别分析了TbDyFe和SiO2膜厚对传感器响应的影响.计算结果表明,TbDyFe和SiO2薄膜厚度分别为0.5μm、2μm时,该声表面波电流传感器具有最大检测灵敏度58.2 kHz/A,有良好温度稳定性和较高的灵敏度,从而为高性能声表面波电流传感器的研制奠定理论基础.     

埋入混凝土中压电陶瓷圆片声指向性和能量研究

对埋入混凝土中的压电陶瓷圆片模态分析发现,在各阶振动模态下其声辐射面存在分布不同的振幅极大值区域.基于压电埋入式混凝土敏感模块的声指向性和能量实验表明:不同激励频率引起的压电陶瓷圆片不同的振动模态对声指向性和能量有影响;在声指向性理论中将声源振动面等效为振幅相等的单一点声源的叠加,使得在各阶频率下压电陶瓷圆片辐射声指向...     

基于PVDF传感器的阶梯梁实验模态分析

以两端固定阶梯梁为例,采用多点激励、单点测量方法通过矩形聚偏氟乙烯（ PVDF）压电薄膜传感器进行实验模态分析,并与数值计算结果和小质量加速度计实验结果进行对比。理论计算和实验表明：PVDF传感器可以代替传统的加速度计进行实验模态分析,对阶梯梁模态分析效果很好,并且PVDF传感器具有连续分布式、质量轻、频响宽、价格相对低廉等优点。     

压电作动器在基于声辐射模态的ASAC中的应用

控制作动器的选取和设计是实现主动结构声学控制的关键一环。利用压电材料的逆压电效应,选择矩形压电片作为控制作动器应用于基于声辐射模态的主动结构声学控制中,提出了基于声辐射模态的压电作动器主动控制策略,并得到了最佳控制电压的获取方法。以简支板为例,通过压电作动器控制效果分析,揭示了压电作动器控制的内在规律;通过与单点力控制效果的比较分析,验证了压电作动器控制策略的优越性。     

基于梯形回环的低频双晶压电俘能器特性分析

针对如何实现微机电系统器件长时间供能已成为亟待解决的问题,提出了一种基于梯形回环的低频双晶压电俘能器,建立了ANSYS有限元分析模型,对其进行了静态分析、模态分析和谐响应分析,将梯形回环俘能器的特性和矩形回环俘能器的特性进行比较。仿真结果表明,在相同发电面积和相同结构的情况下,基于梯形回环的压电俘能器的输出电压比传统的矩形回环的压电俘能器电压提高了115%;引入边峰抑制比(SPI)来衡量其宽频俘能能力,梯形回环双晶压电俘能器宽频能力较传统的矩形回环压电俘能器提高了5%。     

阵列式压电模态传感器的实验研究

通过一组阵列式压电薄膜,设计未知边界条件下振动梁的模态传感器。在梁表面均匀布置一组具有相同形状的矩形聚偏氟乙烯(PVDF)薄膜,通过测量PVDF输出与激励力之间的频率响应函数,利用伪逆方法设计这组PVDF的加权系数,从而实现对结构模态坐标的测量。实验研究表明:该方法设计的模态传感器具有良好的滤波效果,非目标阶模态坐标峰值与目标阶相比,下降了12 dB以上,并且不需要预先知道结构的边界条件或者模态信息。进一步讨论了当振动梁的边界条件发生微小扰动时所设计模态传感器的鲁棒性。     

Thin-film electro-acoustic sensors based on AlN and its alloys: possibilities and limitations

Sputter deposited aluminum nitride (AlN) thin films have played a central role for the successful development of the thin film electro-acoustic technology. The development has been primarily driven by one device—the thin film bulk acoustic resonator, with its primary use for high frequency filter applications for the telecom industry. Recently, increased piezoelectric properties in AlN through the alloying with scandium nitride have been identified both experimentally and theoretically. This opens up new possibilities for the thin film electro-acoustic technology. Here expectations and discussions are presented on acoustic FBAR sensor performance when based on AlN as well as on such AlN alloys to identify possible benefits and limitations. Inhere, the distinction is made between direct and in-direct (acoustic) use of the piezoelectric effect for sensor applications. These two approaches are described and compared in view of their advantages and possibilities. Especially, the indirect (or acoustic) use is identified as interesting for its versatility and good exploitation of the thin film technology to obtain highly sensitive sensor transducers. It is pointed out that the indirect approach can well be obtained internally in the piezoelectric material structure. Original calculations are presented to support the discussion.     

Micromachined Acoustic Resonant Mass Sensor

This paper describes a highly sensitive, film bulk acoustic resonator (FBAR) mass sensor (built on a micromachined silicon-nitride diaphragm with a piezoelectric thin film and Al electrodes) that can operate in vapor and liquid. The sensitivity of the device to mass change on its surface has been investigated by having various thicknesses of silicon-nitride support layer and also of Al layer. The sensor is measured to have a mass sensitivity of 726 cm$^2$/g, which is about 50 times that of a typical quartz crystal microbalance (QCM). In vapor, the sensor (operating at around 1 GHz and having a relatively high quality (Q) factor of 200–300) shows a minimum detectable frequency shift of about 400 Hz, which corresponds to a mass change of$10^-9$g/cm$^2$on the sensor surface, comparable with that detectable by a QCM. In liquid, though the Q usually drops more than an order of magnitude, we obtain a Q of 40 at 2 GHz by using a second harmonic resonance of the resonator. And with the Q, a minimum 5 ppm resonant frequency shift can be detected, which corresponds to$10^- 8$g/cm$^2$change on the sensor surface.hfillhbox[1374]     

Microfabricated Lamb wave device based on PZT sol-gel thin film formechanical transport of solid particles and liquids

The fabrication using silicon micromachining and characterization of an acoustic Lamb wave actuator is presented. The intended use of the device is for mass transport and sensor applications. The device consists of dual interdigitated transducers patterned on a thin-film composite membrane of silicon nitride, platinum, and a sol-gel-derived piezoelectric ceramic (PZT) thin film. The acoustic properties of the device are presented along with preliminary applications to mechanical transport and liquid delivery systems. Improved acoustic signals and improved mass transport are achieved with PZT over present Lamb wave devices utilizing ZnO or AlN as the piezoelectric transducer     

基于PANI/PdO复合薄膜的压电甲烷传感器

研究了一种基于压电原理的甲烷传感器。运用化学氧化聚合法和层层自组装法制备了对甲烷气体敏感的PANI/PdO复合薄膜,通过溅射工艺将薄膜生成在压电材料上,利用敏感薄膜对甲烷的吸附改变晶振频率,从而检测出甲烷气体的含量。实验表明:压电甲烷传感器具有较好的选择性,在0%~2%的甲烷体积分数范围内具有较好的线性输出。     

加速度传感器的有限元分析

为了分析加速度传感器的动态特性,对其进行了模态分析、频响和瞬态分析。通过模态分析得到传感器的前六阶固有频率和振型,频响分析和瞬态分析得到传感器的幅频特性,得出传感器动态维间耦合情况。仿真实验的结果表明:传感器一阶和二阶、四阶和五阶振型相同,频率相近;传感器受到轴向载荷的时候,轴向与水平方向存在较大的动态耦合;受到水平方向载荷作用时轴向耦合较大,而与另一水平方向耦合较小。     

硅微压电超声换能器的设计与制作

介绍了一种用ZnO薄膜作为压电层的硅微压电式超声换能器(PMUT).该硅微压电换能器的振动基膜采用LPCVD制作的氮化硅薄膜和PECVD制作的二氧化硅形成的复合振动膜结构.文中运用有限元方法对该硅微压电换能器的结构进行了模拟和计算,并进行了预应力对硅微换能器共振频率的影响的分析.实验测得硅微压电式换能器的共振频率为71.36 kHz.本文还使用该硅微超声换能器在油中进行了初步的共振频率点收发信号的实验,接收实验测得信号峰峰值为9 mV左右,发射实验标准水听器接收信号峰峰值为0.8 mV左右.     

Finite element analysis and experiments on a silicon membrane actuated by an epitaxial PZT thin film for localized-mass sensing applications

In this paper, we investigate the performance of a piezoelectric membrane actuated by an epitaxial piezoelectric Pb(Zr_0.2Ti_0.8)O₃ (PZT) thin film for localized-mass sensing applications. The fabrication and characterization of piezoelectric circular membranes based on epitaxial thin films prepared on a silicon wafer are presented. The dynamic behavior and mass sensing performance of the proposed structure are experimentally investigated and compared to numerical analyses. A 1500 μm diameter silicon membrane actuated by a 150 nm thick epitaxial PZT film exhibits a strong harmonic oscillation response with a high quality factor of 110-144 depending on the resonant mode at atmospheric pressure. Different aspects related to the effect of the mass position and of the resonant mode on the mass sensitivity as well as the minimum detectable mass are evaluated. The operation of the epitaxial PZT membrane as a mass sensor is determined by loading polystyrene microspheres. The mass sensitivity is a function of the mass position, which is the highest at the antinodal points. The epitaxial PZT membrane exhibits a mass sensitivity in the order of 10⁻¹² g/Hz with a minimum detectable mass of 5 ng. The results reveal that the mass sensor realized with the epitaxial PZT thin film, which is capable of generating a high actuating force, is a promising candidate for the development of high performance mass sensors. Such devices can be applied for various biological and chemical sensing applications.     

薄膜体声波谐振器的结构参数优化分析

建立了微型薄膜体声波谐振器的等效电路模型,研究其整体频率响应特性.提出的等效电路模型考虑了氧化锌压电薄膜两端电极和作为支撑层的氮化硅薄膜对谐振器整体性能的影响,将它们作为传输线引入到等效电路当中.运用PSPICE软件研究了谐振器各结构层的尺寸参数对谐振器谐振频率、品质因数和有效机电耦合系数的影响,并讨论了使用不同材料的电极,谐振器品质因数的变化情况.基于以上分析,对谐振器的结构参数进行优化,获得薄膜体声波谐振器性能的提高.