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实现了一种工作在连续波(CW)模式下InAs/InP(100)外腔量子点激 光器(EC-QDL)。激光器采用小型化的Littrow 外腔结构,中心波长为1.6μm且输出光方向固定。在室温条件下, 对InAs/InP(100)量子点外腔激光器进行 了一系列性能测试。实验结果表明,器件的单模大范围波长调谐达56.5nm,覆盖波长从1566.9623.4 nm,获得30 GHz的无跳模连续调谐范围,在中心波长1.6μm附近单 模输出功率达8mW,并 在无跳模连续调谐范围内获得了30dB以上的边模抑制比(SMSR)。 相似文献
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围绕锗基InAs量子点激光器,开展了激光器腔面失效及再生的研究.研究并分析了灾变性光学镜面损伤产生的机理及其对激光器腔面的影响,开展了腔面再生研究,发展了一套创新性的腔面再生工艺并实现了失效的锗基InAs量子点激光器的再生.根据锗基InAs量子点激光器材料结构设计腐蚀工艺,通过选择性腐蚀在激光器腔面制备出悬臂结构,采用细针解理使悬臂结构自然解理,获得新的激光器谐振腔面,失效激光器重新工作.对比了激光器失效前和再生后的工作性能,结果表明因灾变性光学镜面损伤而失效的锗基InAs量子点激光器获得全新的谐振腔面,锗基激光器器件性能和失效前相当. 相似文献
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高性能InAs/GaAs量子点外腔激光器 总被引:2,自引:2,他引:0
为了获得高性能的量子点外腔激光器(ECL),利用InAs/GaAs量子点Fabry-Perot(FP)腔激光器研制了光栅外腔可调谐ECL。对InAs/GaAs量子点ECL进行了一系列的性能测试,主要包括单模稳定性测试、单模调谐范围测试、阈值电流密度测试、无跳模连续调谐测试和输出功率测试。在室温条件下获得了24.6nm的连续调谐范围,覆盖波长从999.2nm到1 023.8nm,并且实现了波长无跳模连续调谐。在调谐范围内最低阈值电流密度为1 525A/cm2,而且在中心波长处获得的单模输出功率为15mW,单模边模抑制比(SMSR)高达35dB。研究结果表明,通过构建光栅外腔可以实现高性能的InAs/GaAs量子点ECL。 相似文献
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合金层与InAs/InP量子点激光器的接触电阻对激光 器的性能有很大影响,而接触电阻的 大小与合金材料、退火温度和退火时间有关。本文采用Au/Ni/Au/Ge做InAs/InP量子点激光 器的欧姆接触合金层,通过改变退 火温度和退火时间调节量子点激光器中接触电阻的阻值。实验发现,退火时间对接触电阻的 改变不 大,但是提高退火温度却能极大地降低接触电阻的阻值。实验获得了Au/Ni/Au/Ge 合金层与InAs/InP量子点激光器最佳欧姆接触条件,通过矩阵传输法测得相应接触电阻率为 1.34×10-6 Ω·cm2。在此条件下,制备激射中心波长为 1.577μm的多模量子点 激光器,室温下单面最大输出功率达到和超过39mW。 相似文献
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利用气源分子束外延(GSMBE)技术,在InP(100)衬底上生长InAs量子点激光器.有源区包含5层InAs量子点,每层量子点的平均尺寸是2.9 nm和76 nm,面密度在1010 cm-2左右,势垒层为InGaAsP.室温下量子点的光致发光中心波长在1.55 μm,发光峰半高宽为108 imeV.通过化学湿法腐蚀制备双沟道8μm宽脊条激光器,在20℃连续波工作模式下,腔长为0.7 mm的激光器的阈值电流为143 mA(2.5 kA/cm2),器件的激射中心波长在1.55 μm.由于量子点尺寸的非均匀性,在大电流注入,激光器的激射谱展宽.器件单端面最大输出功率为27 mW,功率斜率效率为130 mW/A. 相似文献
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利用固态源分子束外延技术,按S-K模式生长出五层堆垛InAs/GaAs量子点(QD)微结构材料.用这种QD材料制成的激光器,内光学损耗为2.1cm-1,透明电流密度为15士10 A/cm2.对于条宽100μm,腔长2.4mm的激光器(腔面未经镀膜处理),室温下基态激射的波长为1.08μm,阈值电流密度为144A/cm2,连续波光功率输出达2.67W(双面),外量子效率为63%,特征温度为320K.研究了QD激光器翟激射特性,并对结果作了讨论. 相似文献
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S. Anantathanasarn R. Ntzel P.J. van Veldhoven F.W.M. van Otten Y. Barbarin G. Servanton T. de Vries E. Smalbrugge E.J. Geluk T.J. Eijkemans E.A.J.M. Bente Y.S. Oei M.K. Smit J.H. Wolter 《Microelectronics Journal》2006,37(12):1461-1467
This article reviews the recent progress in the growth and device applications of InAs/InP quantum dots (QDs) for telecom applications. Wavelength tuning of the metalorganic vapor-phase epitaxy grown single layer and stacked InAs QDs embedded in InGaAsP/InP (1 0 0) over the 1.55-μm region at room temperature (RT) is achieved using ultra-thin GaAs interlayers underneath the QDs. The GaAs interlayers, together with reduced growth temperature and V/III ratio, and extended growth interruption suppress As/P exchange to reduce the QD height in a controlled way. Device quality of the QDs is demonstrated by temperature-dependent photoluminescence (PL) measurements, revealing zero-dimensional carrier confinement and defect-free InAs QDs, and is highlighted by continuous-wave ground-state lasing at RT of narrow ridge-waveguide QD lasers, exhibiting a broad gain spectrum. Unpolarized PL from the cleaved side, important for realization of polarization insensitive semiconductor optical amplifiers, is obtained from closely stacked QDs due to vertical electronic coupling. 相似文献
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F. Lelarge B. Rousseau B. Dagens F. Poingt F. Pommereau A. Accard 《Photonics Technology Letters, IEEE》2005,17(7):1369-1371
Self-organized InAs quantum-dot (QD) lasers emitting at 1.5 /spl mu/m were grown by gas source molecular beam epitaxy on (100) InP substrates. Room temperature continuous-wave (CW) operation of QD-based buried ridge stripe lasers is reported. We investigated experimentally the relevant CW performances of as-cleaved InP-based QD lasers for telecom applications such as temperature properties (T/sub 0/=56 K), infinite length threshold current density (J/sub /spl infin///spl sim/150 A/cm/sup 2/ per QDs layer) and internal efficiency (0.37 W/A). Lasing in pulsed mode is observed for cavity length as short as 200 /spl mu/m with a threshold current of about 37 mA, demonstrating the high gain of the QD's active core. In addition, the Henry parameter of these InP-based QD lasers is experimentally determined using the Hakki-Paoli method (/spl alpha//sub H//spl sim/2.2). 相似文献
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Wang H. Yuan J. van Veldhoven P.J. de Vries T. Smalbrugge B. Geluk E.J. Bente E.A.J. Oei Y.S. Smit M.K. Anantathanasarn S. Notzel R. 《Electronics letters》2008,44(8):522-523
The first butt joint integrated extended cavity InAs/InP (100) quantum dot (QD) Fabry-Perot laser emitting around 1.55 mum is demonstrated. Continuous wave lasing at room temperature on the QD ground state transition is achieved. The threshold current is comparable to that of all-active QD lasers. The Butt joint reflectivity for straight waveguides is below -40 dB. 相似文献
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Zilkie A.J. Meier J. Mojahedi M. Helmy A.S. Poole P. Barrios P. Poitras D. Rotter T.J. Chi Yang Stintz A. Malloy K.J. Smith P.W.E. Aitchison S.J. 《Lightwave Technology, Journal of》2008,26(11):1498-1509
We report time-resolved measurements of the linewidth enhancement factors (-factors) , and , associated with the adiabatic carrier recovery, carrier heating, and two-photon absorption dynamical processes, respectively, in semiconductor optical amplifiers (SOAs) with different degrees of dimensionality-one InAs/InGaAsP/InP quantum dot (0-D), one InAs/InAlGaAs/InP quantum dash (1-D), and a matching InGaAsP/InGaAsP/InP quantum well (2-D)-all operating near 1.55- wavelengths. We find the lowest values in the QD SOA, 2-10, compared to 8-16 in the QW, and values of and that are also lower than in the QW. In the QD SOA, the -factors exhibit little wavelength dependence over the gain bandwidth, promising for wide-bandwidth all-optical applications. We also find significant differences in the -factors of lasers with the same structure, due to the differences between gain changes that are induced optically or through the electrical bias. For the lasers we find the QW structure instead has the lower -factor, having implications for directly modulated laser applications. 相似文献
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Schwertberger R. Gold D. Reithmaier J.P. Forchel A. 《Photonics Technology Letters, IEEE》2002,14(6):735-737
Self-assembled InAs quantum-dash (QD) lasers with emission wavelengths between 1.54 and 1.78 μm based on the AlGaInAs-AlInAs-InP material system were grown by gas source molecular beam epitaxy. Threshold current densities below 1 kA/cm2 were achieved for 1-mm-long mirror coated broad area lasers with a stack of four QD layers. The devices can be operated up to 80°C in pulsed mode and show a high T0 value of 84 K up to 35°C. In comparison to quantum-well lasers a much lower temperature sensitivity of the emission wavelength was achieved. The temperature shift of Δλ/ΔT = 0.12 nm/K is as low as that caused by the refractive index change 相似文献
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Jin Soo Kim Jin Hong Lee Sung Ui Hong Ho‐Sang Kwack Chul Wook Lee Dae Kon Oh 《ETRI Journal》2004,26(5):475-480
Self‐assembled InAs quantum dots (QDs) embedded in an InAlGaAs matrix were grown on an InP (001) using a solid‐source molecular beam epitaxy and investigated using transmission electron microscopy (TEM) and photoluminescence (PL) spectroscopy. TEM images indicated that the QD formation was strongly dependent on the growth behaviors of group III elements during the deposition of InAlGaAs barriers. We achieved a lasing operation of around 1.5 µm at room temperature from uncoated QD lasers based on the InAlGaAs‐InAlAs material system on the InP (001). The lasing wavelengths of the ridge‐waveguide QD lasers were also dependent upon the cavity lengths due mainly to the gain required for the lasing operation. 相似文献
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M. M. Sobolev I. M. Gadzhiev I. O. Bakshaev V. N. Nevedomskii M. S. Buyalo Yu. M. Zadiranov E. L. Portnoi 《Semiconductors》2011,45(8):1064-1069
Electroluminescence and absorption spectra of a ten-layer InAs/GaAs quantum dot (QD) superlattice built in a two-section laser
with sections of equal length is experimentally studied at room temperature. The thickness of the GaAs spacer layer between
InAs QD layers, determined by transmission electron microscopy, is ∼6 nm. In contrast to tunnel-coupled QDs, QD superlattices
amplify the optical polarization intensity and waveguide absorption of the TM mode in comparison with the TE mode. It is found
that variations in the multimodal periodic spectrum of differential absorption of the QD superlattice structure are strongly
linearly dependent on the applied electric field. Differential absorption spectra exhibit the Wannier-Stark effect in the
InAs/GaAs QD superlattice, in which, in the presence of an external electric field, coupling of wave functions of miniband
electron states is suppressed and a series of discrete levels called the Wannier-Stark ladder states are formed. 相似文献
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《Quantum Electronics, IEEE Journal of》2009,45(7):873-879
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Room-temperature operation of InP-based InAs quantum dot laser 总被引:1,自引:0,他引:1
Jin Soo Kim Jin Hong Lee Sung Ui Hong Won Seok Han Ho-Sang Kwack Chul Wook Lee Dae Kon Oh 《Photonics Technology Letters, IEEE》2004,16(7):1607-1609
A ridge waveguide quantum dot (QD) laser with a stripe width of 15 /spl mu/m was fabricated by using the seven-stacked InAs QD layers based on the InAlGaAs-InAlAs material system on InP [001] substrate. Room-temperature lasing operation was observed at 1.501 /spl mu/m, which is the first observation from the InAs QDs with the InAlGaAs-InAlAs structure. The characteristic temperature of the InAs QD laser calculated from the temperature dependence of threshold current density was 135 K in the temperature range from 200 K to room temperature. 相似文献