高效率GaAs/InGaAsHFET功率放大器

研制成 Ga As/ In Ga As异质结功率 FET(HFET) ,该器件是在常规的高 -低 -高分布 Ga As MESFET的基础上 ,在有源层的尾部引入 i-In Ga As层。采用 HFET研制的两级 C波功率放大器 ,在 5 .0～ 5 .5 GHz带内 ,当Vds=5 .5 V时 ,输出功率大于 3 2 .3 1 d Bm(0 .1 77W/ mm ) ,功率增益大于 1 9.3 d B,功率附加效率 (PAE)大于3 8.7% ,PAE最大达到 49.4% ,该放大器在 Vds=9.0 V时 ,输出功率大于 3 6.65 d Bm(0 .48W/ mm) ,功率增益大于 2 1 .6d B,PAE典型值 3 5 %     

Power Performance of AlGaN/GaN HEMTs Grown on SiC by Ammonia-MBE at 4 and 10 GHz

In this letter, we report on the microwave power and efficiency performance of AlGaN/GaN high-electron mobility transistors (HEMTs) grown by ammonia molecular beam epitaxy (ammonia-MBE) on SiC substrates. At 4 GHz, an output power density of 11.1 W/mm with an associated power-added efficiency (PAE) of 63% was measured at V _ds = 48 V on passivated devices. At 10 GHz, an output power density of 11.2 W/mm with a PAE of 58% was achieved for V _ds = 48 V. These results are the highest reported power performance for AlGaN/GaN HEMTs grown by ammonia-MBE and the first reported for ammonia-MBE on SiC substrates.     

A high-efficiency class-E GaN HEMT power amplifier at 1.9 GHz

A single stage class-E power amplifier in GaN high electron mobility transistor (HEMT) technology is reported. The circuit operates at 1.9 GHz. At 30-V drain bias, a power-added-efficiency (PAE) of 57% and a maximum output power of over 37dBm was achieved, corresponding to a power density of 5.25W/mm. At 40-V drain bias, an output power of 38.7dBm is achieved at 50% PAE corresponding to a power density of 7.4W/mm.     

Watt-level Ka- and Q-band MMIC power amplifiers operating at lowvoltages

Ka- and Q-band watt-level monolithic power amplifiers (PAs) operating at a low drain bias of 3.6 V are presented in this paper. Design considerations for low-voltage operation have been carefully studied, with an emphasis on the effect of device models. The deficiency of conventional table-based models for low-voltage operation is identified. A new nonlinear device model, which combines the advantages of conventional analytical models and table-based models, has been developed to circumvent the numerical problems and, thus, to predict optimum load impedance accurately. The model was verified with load-pull measurements at 39 GHz. To implement a low-voltage 1-W monolithic-microwave integrated-circuit amplifier, careful circuit design has been performed using this model. A Q-band two-stage amplifier showed 1-W output power with a high power gain of 15 dB at 3.6-V drain bias. The peak power-added efficiency (PAE) was 28.5% and 1-dB compression power (P_{1 dB}) was 29.7 dBm. A Ka-band two-stage amplifier showed a P_{1 dB} of 30 dBm with 24.5-dB associated gain and 32.5% PAE. Under very low dc power conditions (P_dc<2 W, V_ds=3.4 V), the amplifiers showed 29-dBm output power and PAE close to 36%, demonstrating ultimate low-power operation capability. To the best of our knowledge, this is the first demonstration of watt-level PA's under 3.6-V operation at 26 and 40 GHz. Compared with the published data, this work also represents state-of-the-art performance in terms of power gain, efficiency, and chip size     

A Ku-band high power density AlGaN/GaN HEMT monolithic power amplifier

A high power density monolithic power amplifier operated at Ku band is presented utilizing a 0.3μm AlGaN/GaN HEMT production process on a 2-inch diameter semi-insulating（SI） 4H-SiC substrate by MOCVD. Over the 12-14 GHz frequency range,the single chip amplifier demonstrates a maximum power of 38 dBm（6.3 W）, a peak power added efficiency（PAE） of 24.2%and linear gain of 6.4 to 7.5 dB under a 10%duty pulse condition when operated at V_ds = 25 V and V_gs = -4 V.At these power levels,the amplifier exhibits a power density in excess of 5 W/mm.     

A Cool, Sub-0.2 dB Noise Figure GaN HEMT Power Amplifier With 2-Watt Output Power

This paper reports on a S-, C-band low-noise power amplifier (LNPA) which achieves a sub-0.2 dB noise figure (NF) over a multi-octave band and a saturated output power (Psat) of 2 W at a cool temperature of -30degC . The GaN MMIC is based on a 0.2 mum AlGaN/GaN-SiC HEMT technology with an f_T ~ 75 GHz. At a cool temperature of -30degC and a power bias of 15 V-400 mA, the MMIC achieves 0.25-0.45 dB average NF over a 2-8 GHz band and a linear P_1dB of 32.8 dBm ( ~ 2 W) with 25% power-added efficiency (PAE). At a medium bias of 12 V-200 mA, the amplifier achieves 0.1-0.2 dB average NF across the same band and a P_1dB of 32.2 dBm (1.66 W) with 35% PAE. The corresponding saturated output power is greater than 2 W. At a low noise bias of 5 V-200 mA, a remarkable 0.05-0.15 dB average NF is achieved with a P_1dB > 24 dBm and PAE ~ 33%. These results are believed to be the lowest NF ever reported for a multi-octave fully matched MMIC amplifier capable of > 2 W of output power.     

19WC-波段MMIC多芯片合成功率放大器

报告了一个两级 C-波段功率单片电路的设计、制作和性能 ,该单片电路包括完全的输入端和级间匹配 ,输出端的匹配在芯片外实现 ,该放大器在 5.2～ 5.8GHz带内连续波工作 ,输出功率大于 36.6d Bm,功率增益大于 18.6d B,功率附加效率 34 % ,4芯片合成的功率放大器在 4 .7～ 5.3GHz带内 ,输出功率大于 4 2 .8d Bm( 19.0 W) ,功率增益大于 18.8d B,典型的功率附加效率为 34 %。     

Gate-recessed AlGaN-GaN HEMTs for high-performance millimeter-wave applications

We report deep-submicrometer gate-recessed and field-plated AlGaN-GaN HEMTs and their state-of-the-art continuous wave (CW) power performance measured at 30 GHz. The AlGaN-GaN HEMTs exhibit a CW power density of 5.7 W/mm with a power-added efficiency (PAE) of 45% and drain-efficiency of 58% at V/sub ds/=20 V. At V/sub ds/=28 V, the output power density is measured as high as 6.9 W/mm with both PAE and output power increasing with input power level. Compared to conventional T-gated AlGaN-GaN HEMTs, the output power density and PAE of gate-recessed AlGaN-GaN HFETs are improved greatly, along with the excellent pulsed IVs. We attribute the improvement to both a field-plating effect and a vertical separation of the gate plane from surface states.     

An X-Band High-Power and High-PAE PHEMT MMIC Power Amplifier for Pulse and CW Operation

An X-band high-power and high power added efficiency (PAE), two-stage AlGaAs/InGaAs/GaAs psuedomorphic high electronic mobility transistor (PHEMT) monolithic microwave integrated circuit (MMIC) power amplifier is presented. The amplifier is designed to fully match a 50 Omega input and output impedance. Based on a 0.35 mum gate-length power PHEMT technology, the MMIC is fabricated on a 3 mil thick wafer. Under an 8 V DC bias condition, the characteristics of 17.5 dB small-signal gain, 10 W continuous wave mode saturation output power of 42% PAE, and 12.6 W pulse saturation output power of 52.6% PAE at 9.4 GHz can be achieved.     

一种GaN宽禁带功率放大器的设计

氮化镓（GaN）作为第三代半导体材料的典型代表之一,由于其宽带隙、高击穿电场强度等特点,被认为是高频功率半导体器件的理想材料。为研究GaN功率放大器的特点,基于Agilent ADS仿真软件,利用负载／源牵引方法设计制作了一种Si波段GaN宽禁带功率放大器（10W）。详细说明了设计步骤并对放大器进行了测试,数据表明放大器在2．3～2．4GHz范围内可实现功率超过15W,附加效率超过67％的输出。实验结果证实,GaN功率放大器具有高增益、高效率的特点。     

The effect of surface passivation on the microwave characteristicsof undoped AlGaN/GaN HEMTs

Surface passivation of undoped AlGaN/CaN HEMT's reduces or eliminates the surface effects responsible for limiting both the RF current and breakdown voltages of the devices. Power measurements on a 2×125×0.5 μm AlGaN/GaN sapphire based HEMT demonstrate an increase in 4 GHz saturated output power from 1.0 W/mm [36% peak power-added efficiency (PAE)] to 2.0 W/mm (46% peak PAE) with 15 V applied to the drain in each case. Breakdown measurement data show a 25% average increase in breakdown voltage for 0.5 μm gate length HEMT's on the same wafer. Finally, 4 GHz power sweep data for a 2×75×0.4 μm AlGaN/GaN HEMT on sapphire processed using the Si₃N₄ passivation layer produced 4.0 W/mm saturated output power at 41% PAE (25 V drain bias). This result represents the highest reported microwave power density for undoped sapphire substrated AlGaN/GaN HEMT's     

A Ka-band 22 dBm GaN amplifier MMIC

A Ka-band GaN amplifier MMIC has been designed in CPW technology,and fabricated with a domestic GaN epitaxial wafer and process.This is,to the best of our knowledge,the first demonstration of domestic Kaband GaN amplifier MMICs.The single stage CPW MMIC utilizes an AlGaN/GaN HEMT with a gate-length of 0.25μm and a gate-width of 2×75μm.Under V_ds=10 V,continuous-wave operating conditions,the amplifier has a 1.5 GHz operating bandwidth.It exhibits a linear gain of 6.3 dB,a maximum output power of 22 dBm and a peak PAE of 9.5%at 26.5 GHz.The output power density of the AlGaN/GaN HEMT in the MMIC reaches 1 W/mm at Ka-band under the condition of V_ds=10 V.     

A 4-W X-band compact coplanar high-power amplifier MMIC with 18-dB gain and 25% PAE

The performance of a compact coplanar microwave monolithic integrated circuit (MMIC) amplifier with high output power in the X-band is presented. Based on our 0.3-/spl mu/m gate-length GaAs power pseudomorphic high electron mobility transistor (PHEMT) process on 4-in wafer, this two-stage amplifier, having a chip size of 16 mm/sup 2/, averages 4-W continuous-wave (CW) and 25% mean power-added efficiency (PAE) in the X-band, with more than 18-dB linear gain. Peak output powers of P/sub -1dB/=36.3dBm (4.3 W) and P/sub sat/ of 36.9 dBm (4.9 W) at 10 GHz with a PAE of 50% were also measured. Compared to previously reported X-band coplanar high-power amplifiers, this represents a chip size reduction of 20%, comparable to the size of compact state-of-the-art microstrip power amplifiers.     

1 W/mm RF power density at 3.2 GHz for a dual-layer RESURF LDMOStransistor

In this letter, we present state-of-the-art performance, in terms of output power density, for an RF-power LDMOS transistor. The novel device structure has a dual-layer RESURF of the drift region, which allows for a sub-μm channel length and a high breakdown voltage of 110 V. The output power density is more than 2 W/mm at 1 GHz and a V_DS=70 V, with a stable gain of 23 dB at V_DS=50 V. At 3.2 GHz the power density is over 1 W/mm at V_DS=50 V and 0.6 W/mm at V_DS=28 V. These results are to our knowledge the best ever for silicon power MOSFETs     

A High-Efficient CMOS RF Power Amplifier With Automatic Adaptive Bias Control

A 2.4-GHz Doherty power amplifier (PA) is developed in 0.18-mum CMOS technology. An automatic adaptive bias control circuit is integrated with the auxiliary PA to improve the overall performance of the PA. Operated at 3V, the P_{1 dB} and associated power-added-efficiency (PAE) of the PA are 21dBm and 33%, respectively. At the output power 6-dB backoff from P_{1 dB}, the PAE remains 21%. The limited PAE degradation at backoff power levels makes the PA suitable for the applications with high peak-to-average power ratio     

Oxygen Ion Implantation Isolation Planar Process for AlGaN/GaN HEMTs

A multienergy oxygen ion implantation process was demonstrated to be compatible with the processing of high- power microwave AlGaN/GaN high electron mobility transistors (HEMTs). HEMTs that are isolated by this process exhibited gate-lag- and drain-lag-free operation. A maximum output power density of 5.3 W/mm at V_gs = -4 V and V_ds = 50 V and a maximum power added efficiency of 51.5% at V_gs = -4 V and V_ds = 30 V at 3 GHz were demonstrated on HEMTs without field plates on sapphire substrate. This isolation process results in planar HEMTs, circumventing potential problems with enhanced gate leakage due to the gate contacting the 2-D electron gas at the mesa sidewall.     

A 50 to 70 GHz Power Amplifier Using 90 nm CMOS Technology

A 50 to 70 GHz wideband power amplifier (PA) is developed in MS/RF 90 nm 1P9M CMOS process. This PA achieves a measured P_sat of 13.8 dBm, P_{1 dB} of 10.3 dBm, power added efficiency (PAE) of 12.6%, and linear power gain of 30 dB at 60 GHz under V_DD biased at 1.8 V. When V_DD is biased at 3 V, it exhibits P_sat of 18 dBm, P_{1 dB} of 12 dBm, PAE of 15%, and linear gain of 32.4 dB at 60 GHz. The MMIC PA also has a wide 3 dB bandwidth from 50 to 70 GHz, with a chip size of 0.66 times 0.5 mm². To the author's knowledge, this PA demonstrates the highest output power, with the highest gain among the reported CMOS PAs in V-band.     

InAlAs/InGaAs metamorphic HEMT with high current density and highbreakdown voltage

An In_0.3Al_0.7As/In_0.3Ga_0.7 As metamorphic power high electron mobility transistor (HEMT) grown on GaAs has been developed. This structure with 30% indium content presents several advantages over P-HEMT on GaAs and LM-HEMT on InP. A 0.15-μm gate length device with a single δ doping exhibits a state-of-the-art current gain cut-off frequency F_t value of 125 GHz at V_ds=1.5 V, an extrinsic transconductance of 650 mS/mm and a current density of 750 mA/mm associated to a high breakdown voltage of -13 V, power measurements performed at 60 GHz demonstrate a maximum output power of 240 mW/mm with 6.4-dB power gain and a power added efficiency (PAE) of 25%. These are the first power results ever reported for any metamorphic HEMT     

Power performance of AlGaN-GaN HEMTs grown on SiC by plasma-assisted MBE

We report AlGaN-GaN high electron mobility transistors (HEMTs) grown by molecular beam epitaxy (MBE) on SiC substrates with excellent microwave power and efficiency performance. The GaN buffers in these samples were doped with carbon to make them insulating. To reduce gate leakage, a thin silicon nitride film was deposited on the AlGaN surface by chemical vapor deposition. At 4 GHz, an output power density of 6.6 W/mm was obtained with 57% power-added efficiency (PAE) and a gain of 10 dB at a drain bias of 35 V. This is the highest PAE reported until now at 4 GHz in AlGaN-GaN HEMTs grown by MBE. At 10 GHz, we measured an output power density of 7.3 W/mm with a PAE of 36% and gain of 7.6 dB at 40-V drain bias.     

A 2.8-W Q-Band High-Efficiency Power Amplifier

A highly efficient and high-power monolithic power amplifier operating at Q-band is presented utilizing 0.15-$muhbox m$pseudomorphic InGaAs/GaAs HEMT production process on 2-mil-thick substrate. Over 42–46 GHz frequency range, the amplifier demonstrated maximum power of 2.8 W (34.5 dBm) and power-added efficiency (PAE) of 23% to 26% when operated at 5 V and 250 mA/mm. The amplifier attained maximum PAE of 24% to 29% and power of 33.6–34 dBm when biased at 5 V and 125 mA/mm. At these power levels and PAEs, the amplifier exhibited power densities in excess of 430 mW/mm. With device periphery ratio of 1:2.857, effective phase compensation of the input feed network, and low-loss output-combining network, the power amplifier has been able to attain state-of-the-art efficiency and power performance.